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1. 发明专利

JPH0778805A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0778805A
公开(公告)日：1995-03-20
申请号：JP22170393
申请日：1993-09-07
申请人： APPLIED MATERIALS JAPAN , MITSUBISHI ELECTRIC CORP
发明人： SANPEI TETSUHIKO , ISHIDA TOMOAKI , YONEDA MASAHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable the dry etching of an organic thin film without residue, by applying a patterned inorganic thin film to a mask, using plasma of mixed gas wherein fluorine based gas is added to oxygen gas, and dry-etching the organic thin film. CONSTITUTION:The pattern of an silicon oxide film 6 is formed. An organic resist film 5 is subjected to dry etching by applying the pattern of the film 6 to a mask and using mixed gas plasma of oxygen gas and fluorine based gas. When O2 ions enter the surface of the organic resist film 5, the ions react with carbon in the film 5, and CO2 is formed. The CO2 is eliminated and the organic resist film 5 is etched. When O2 ions enter the surface of the silicon oxide film 6, the surface is sputtered and a micromask 8 is diffused on the surface of the organic resist film 5. when F ions enter the micromask 8, the ions react with the micromask 8, and are eliminated in the form of SiF4.

2. 发明专利

JPH10163445A METHOD OF MEASURING SEMICONDUCTOR DEVICE AND MANUFACTURER OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10163445A
公开(公告)日：1998-06-19
申请号：JP32003596
申请日：1996-11-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHIDA TOMOAKI , OBARA MAKOTO
IPC分类号： G01B21/28 , G01B21/30 , G01N37/00 , G01Q60/24 , G01Q80/00 , H01L21/02 , H01L21/66 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To reduce dispersion of the measuring method of a semiconductor device, and improve yield, by measuring the area turning to the effective area of a capacitor of a charge storage electrode wherein irregularities are formed, by using an atomic force microscope. SOLUTION: Silicon is laminated filling a contact hole 12, a substratum charge storage electrode 22a is formed by patterning, and silicon crystal nuclei 26 are formed on the whole surface. By heat treatment, silicon in the amorphous state is crystallized and grown, using the silicon crystal nuclei as nuclei. Thereby a charge storage electrode 22 having an irregular surface is formed. The measurement probe 27 of an atomic force microscope is made to approach a point about 5nm distant from the electrode 22. Interatomic force generated between the probe 27 and the electrode 22 is detected, and the surface area of the electrode 22 is measured. Thereby the area increase ratio is calculated. Hence the area turning to the effective area of a capacitor can be measured after the irregularities are formed.

3. 发明专利

JP2501948B2 失效
公开(公告)号：JP2501948B2
公开(公告)日：1996-05-29
申请号：JP28733090
申请日：1990-10-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHIDA TOMOAKI
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065

4. 发明专利

JPH01293521A METHOD AND APPARATUS FOR PLASMA TREATMENT 失效
公开(公告)号：JPH01293521A
公开(公告)日：1989-11-27
申请号：JP12444888
申请日：1988-05-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： ISHIDA TOMOAKI , NISHIOKA KYUSAKU
IPC分类号： C23C16/50 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To facilitate a plasma treatment with which an etching speed and a thin film forming speed are not degraded and a sample is hardly damaged and contaminated by a method wherein a plasma is formed, using a mirror field whose center axis is in parallel with the surface of the sample, and the sample is treated in the plasma. CONSTITUTION:A plasma is formed, using a mirror field whose center axis is in parallel with the surface of a sample, and the sample is treated in the plasma. For instance, after a plasma generating chamber 1 and a sample chamber 2 are sufficiently evacuated, reactive gas is introduced into the chambers 1 and 2 from a gas inlet 7 and the gas pressure is maintained at a required value. If a radio frequency voltage is applied between radio frequency electrodes 5a and 5b by a radio frequency source 6, a plasma is generated in the plasma generating chamber 1 by a radio frequency discharge. If the mirror field whose center axis is in parallel with the sample surface is formed in the plasma by magnetic coils 9a and 9b, most of electrons and ions are confined by the magnetic field. As a result, only neutral radicals activated in the plasma generating chamber 1 reach the sample chamber 2 and the surface of the sample 4.

5. 发明专利

JPH0851098A SEMICONDUCTOR TREATMENT DEVICE 失效
公开(公告)号：JPH0851098A
公开(公告)日：1996-02-20
申请号：JP18604694
申请日：1994-08-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOKOI TAKAHIRO , FUJIWARA NOBUO , OGAWA TOSHIAKI , KAWAI KENJI , ISHIDA TOMOAKI
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To provide a semiconductor treatment device which is capable of both removing foreign objects without lessening in operation rate and being improved in product yield. CONSTITUTION:A movable electrode 14 is provided above a specimen pad 6 by a prescribed height, a positive voltage is applied to the electrode 14 while it moves, and a negative voltage is applied to the specimen pad 6 to make a corona discharge take place.

6. 发明专利

JPH0223612A PLASMA REACTOR 失效
公开(公告)号：JPH0223612A
公开(公告)日：1990-01-25
申请号：JP17264388
申请日：1988-07-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , KAWAI KENJI , AKAZAWA MORIAKI , SHIBANO TERUO , ISHIDA TOMOAKI , NISHIOKA KYUSAKU
IPC分类号： H01L21/302 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To stabilize plasma, to extend the range of conditions for forming plasma, to improve controllability and to obtain a wide applicability by providing the inside of a plasma forming chamber with a coil means forming a minimum magnetic field. CONSTITUTION:Ioffe magnetic field coils 10 are separated mutually in the axial direction and arranged in parallel, and composed of a pair of annular conductors 10a shaping a mirror field and plurality of linear conductors 10b being disposed at regular intervals in the circumferential direction among the opposed internal side faces of these annular bodies 10a, extended in parallel with the direction of the central axes of said annular bodies 10a and forming a cusp field. When the Ioffe magnetic field coils 10 are used as coils 5 for generating a minimum magnetic field, a pair of the annular conductors 10a shaping the mirror field are arranged in a coaxial manner with a cylindrical plasma generating chamber 2 so as to surround the plasma generating chamber 2, and the linear conductors 10b forming the cusp field are disposed in parallel with the central axis of the plasma generating chamber 2. Accordingly, the Ioffe magnetic field coils 10 form the minimum magnetic field acquired by superposing the mirror field and the cusp field in the plasma generating chamber 2.

7. 发明专利

JPH01307226A SEMICONDUCTOR MANUFACTURING EQUIPMENT 失效
公开(公告)号：JPH01307226A
公开(公告)日：1989-12-12
申请号：JP13902088
申请日：1988-06-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIBANO TERUO , AKAZAWA MORIAKI , KAWAI KENJI , FUJIWARA NOBUO , OGAWA TOSHIAKI , MORITA HIROYUKI , ISHIDA TOMOAKI , NISHIOKA KYUSAKU
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To lead out ion saturation current with high efficiency, and enable the high speed etching with little damage by applying high frequency to an ion leading out electrode. CONSTITUTION:Plasma is generated and high frequency is applied to an ion leading out electrode 10, by a high frequency power supply 15. The electric potential of the ion leading-out electrode 10 is kept always lower than or equal to that of a plasma chamber 1, by ion and electron in the entering plasma. An intense electric field region called an ion sheath connecting the above electric potential and plasma electric potential is generated in the vicinity of the ion leading-out electrode 10. Ion is accelerated in the vertical direction with respect to the ion leading-out electrode 10, by the ion sheath. A part of the accelerated ion enters into a sample chamber 7, after passing through holes of the mesh-type ion leading-out electrode 10 and turning into a shower state. Thereby, the high speed etching with little damage or the forming of a thin film is enabled.

8. 发明专利

JP2004165534A Semiconductor device and its fabricating method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2004165534A
公开(公告)日：2004-06-10
申请号：JP2002331697
申请日：2002-11-15
申请人： Mitsubishi Electric Corp , Renesas Semiconductor Engineering Corp , 三菱電機株式会社 , 株式会社ルネサスセミコンダクタエンジニアリング
发明人： NAKAHARA TAKEHIKO , UEKADO TORU , ISHIDA TOMOAKI , INOUE SHINYA , NAKAMURA NAOYA
IPC分类号： H01L21/3065 , H01L21/3205 , H01L21/768 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a fabricating method of a via hole in which polymers containing a great deal of Ti can be eliminated and besides cleaning liquid making and waste liquid treatment are easily performed.
SOLUTION: The semiconductor device fabricating method includes processes as follows: An Al interconnection film 1, a Ti antireflection film 2 and an interlayer insulative film 3 are stacked to form a laminate; photoresist patterns 4 are formed on the interlayer insulative film 3 and a via hole 7 reaching the Al interconnection film 1 or the Ti antireflection film 2 is formed in the interlayer insulative film 3 by performing etching defining these patterns as a mask (step S1); the photoresist patterns 4 are eliminated by ashing (step S2); and cleaning is performed by an acidic solution containing a carboxylic acid and aqueous hydrogen peroxide (step S3).
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种可以消除含有大量Ti的聚合物的通孔的制造方法，并且容易进行清洗液的制造和废液处理。解决方案：半导体器件制造方法包括如下工艺：将Al互连膜1，Ti抗反射膜2和层间绝缘膜3层叠以形成层压体; 在层间绝缘膜3上形成光致抗蚀剂图案4，并通过将这些图案作为掩模进行蚀刻，在层间绝缘膜3中形成到达Al互连膜1或Ti抗反射膜2的通孔7（步骤S1）。通过灰化消除光致抗蚀剂图案4（步骤S2）; 并通过含有羧酸和过氧化氢水溶液的酸性溶液进行清洗（步骤S3）。版权所有（C）2004，JPO

9. 发明专利

JPH05165225A REMOVING METHOD OF RESIST 失效
公开(公告)号：JPH05165225A
公开(公告)日：1993-07-02
申请号：JP35198891
申请日：1991-12-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： MOCHIZUKI TOSHIO , FUJIWARA NOBUO , ISHIDA TOMOAKI
IPC分类号： G03F7/42 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To remove a resist layer used as a mask for dry etching without producing resist residue, and moreover, to keep the margin for corrosion due to the residual matter of the etching gas. CONSTITUTION:When a resist layer 1 used as a etching mask is removed after dry etching, the modified part 1a of the surface of the resist layer and deposited films 2 are preliminarily removed. The modified part 1a is produced by the chemical reaction during dry etching, and the films 2 are formed by deposition of reaction products during dry etching on the resist layer 1 and on the surface of the film 3 to be etched.

10. 发明专利

JPH05145034A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05145034A
公开(公告)日：1993-06-11
申请号：JP30871891
申请日：1991-11-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： AKAZAWA MORIAKI , ISHIDA TOMOAKI , MUKAI TAKAO
IPC分类号： H01L21/76 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
摘要： PURPOSE:To enable high precision working and improve yield, by leaving a silicon nitride film in a recess, in order to discriminate a side contact part out of side walls of a trench formed in an Si substrate from a part for forming an oxide film for capacitor isolation which film electrically isolates a first electrode from the silicon substrate. CONSTITUTION:A silicon nitride film 21 is deposited on a diffusion layer 4 for connection on which a recess is formed, and left in the recess of the layer 4 by anisotropically etching the film 21 and an oxide film 2 for element isolation. A trench is formed in an Si substrate 1 by using a first oxide film 5 as mask material, and an oxide film 6 for capacitor isolation is formed on the side surface and the bottom surface. The silicon nitride film 21 left in the recess is selectively eliminated. Conductive material is deposited in the trench, anisotropically etched, left on the side wall part of the trench, and turned into a first electrode. A capacitor dielectric film, a second electrode, and a second oxide film are deposited in order. Unnecessary parts of the first oxide film 5 are eliminated, and the Si substrate 1 is exposed, thereby completing a capacitor part.

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