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1. 发明专利

JPH04199512A FORMATION OF PATTERN ALUMINUM ALLOY FILM 失效
公开(公告)号：JPH04199512A
公开(公告)日：1992-07-20
申请号：JP33543890
申请日：1990-11-28
申请人： APPLIED MATERIALS JAPAN , MITSUBISHI ELECTRIC CORP
发明人： FUKUYAMA TOSHIHIKO , SAWAI HISAHARU , FUJIWARA NOBUO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213
摘要： PURPOSE:To improve etching selectivity between a photoresist mask and an aluminum alloy film by performing plasma etching under coexistence of chlorine gas and gas containing bromine compound. CONSTITUTION:An aluminum.silicon.copper allay film is formed on a base substrate surface by means of sputtering for example, and normal photolithographic process is taken to form a pattern by a photo resist mask being photosensitive resin to provide a product to be processed. Mixture gas of compound gas containing chlorine and bromine and in addition compound gas containing fluorine is used in plasma etching of the aluminum alloy film formed on the surface of the base of the product to be processed. Thus etching is possible with good selectivity with the photo resist mask and etching with good accuracy at a pattern step part as well as fast etching without residual is possible.

2. 发明专利

JPS644590B2 失效
公开(公告)号：JPS644590B2
公开(公告)日：1989-01-26
申请号：JP21548785
申请日：1985-09-27
申请人： APPLIED MATERIALS JAPAN
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO , MATSUI FUMYA
IPC分类号： C23C16/44 , C23C16/442 , C23C16/48 , H01L21/205

3. 发明专利

JPS6274078A VAPOR GROWTH DEVICE 失效
公开(公告)号：JPS6274078A
公开(公告)日：1987-04-04
申请号：JP21548785
申请日：1985-09-27
申请人： APPLIED MATERIALS JAPAN
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO , MATSUI FUMIYA
IPC分类号： C23C16/44 , C23C16/442 , C23C16/48 , H01L21/205
摘要： PURPOSE:To suppress the formation of particles by a vapor growth method and to prevent the generation of the particles on the surface of a material to be treated by passing a reactive gas in a vapor growth device in parallel with the surface of the material to be treated and covering the side of the reactive gaseous flow on the side opposite from the material to be treated with the inert gaseous flow. CONSTITUTION:The material 22 to be treated such as wafer is placed on a hot plate 20 and is heated to the reaction temp. Gas of SiH4-O2 is then heated as the reactive gas to the reaction temp. by a heating coil 34 and is passed on the surface of the wafer 22 in parallel with the wafer 22 from a nozzle 24 so as to form the film of the formed SiO2 on the wafer 22. The inert gas such as N2 heated to the same temp. as the temp. of the reactive gas by a coil 42 is passed in parallel with the top surface of the reactive gas flow on the side opposite from the wafer 22 and the intrusion of the circumferential air into the gaseous N2 flow or reactive gaseous flow is prevented by a shielding plate 43. Since the gaseous N2 is of the same temp. as the temp. of the reactive gas, the generation of turbulence is obviated and the particles formed in the reactive gas are discharged together with the waste gas from a discharge pipe 36. The falling of the particles onto the wafer surface and the formation of the particles thereon are obviated.

4. 发明专利

JPH05166597A LOW TEMPERATURE CONTROL SYSTEM FOR ELECTRODE OF VACUUM DEVICE USING LIQUID NITROGEN IN SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH05166597A
公开(公告)日：1993-07-02
申请号：JP32777791
申请日：1991-12-11
申请人： APPLIED MATERIALS JAPAN , FUJITSU LTD
发明人： FUKUYAMA TOSHIHIKO , TSUJI TAKASHI , ONO MASANORI , SUZUKI AKIRA , YANO HIROSHI , MIHARA SATOSHI
IPC分类号： H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To provide a control system for the electrode of a vacuum device which uses liquid nitrogen in a semiconductor manufacturing device through simple constitution. CONSTITUTION:A refrigerator 3 for reliquefying nitrogen, an electrode 2 for temperature control, and two liquid nitrogen tanks 4, 5 which supply liquid nitrogen to the electrode are connected to one another by a pipe to circulate nitrogen therethrough. A control circuit 11 is provided which controls the refrigerator 3 for reliquefying nitrogen in response to signals input from a sensor 7, 8 for detecting the level of the liquid nitrogen in in each tank and a sensor 14, 15 for detecting pressure, and which also controls valve so that the two liquid nitrogen tanks 4, 5 are switched from one to the other when in use. Since the amount of consumption of the liquid nitrogen can be reduced, the cost can be lowered and temperature control of high accuracy is enabled.

5. 发明专利

JPH0359988B2 失效
公开(公告)号：JPH0359988B2
公开(公告)日：1991-09-12
申请号：JP20497584
申请日：1984-09-28
申请人： APPLIED MATERIALS JAPAN
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO
IPC分类号： C23C16/44 , B05D3/06 , B05D7/24 , C23C16/442 , C23C16/455 , C23C16/48 , C30B25/10 , C30B25/14

6. 发明专利

JPH0253513B2 失效
公开(公告)号：JPH0253513B2
公开(公告)日：1990-11-16
申请号：JP16042587
申请日：1987-06-26
申请人： APPLIED MATERIALS JAPAN
发明人： SANPEI TETSUHIKO , FUKUYAMA TOSHIHIKO , HASEGAWA AKIRA , MAEDA KAZUO
IPC分类号： C23F4/00 , H01L21/311

7. 发明专利

JPH05166818A WAFER COOLING DEVICE FOR SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH05166818A
公开(公告)日：1993-07-02
申请号：JP32778091
申请日：1991-12-11
申请人： APPLIED MATERIALS JAPAN , FUJITSU LTD
发明人： FUKUYAMA TOSHIHIKO , TSUJI TAKASHI , ONO MASANORI , SUZUKI AKIRA , YANO HIROSHI , IIZUKA KATSUHIKO
IPC分类号： C23C14/50 , H01L21/203 , H01L21/302 , H01L21/3065 , H01L21/324 , H01L23/34
摘要： PURPOSE:To make it possible to control the temperature of a wafer with ease and eliminate product variability by cooling an He gas below a normal temperature in the case when the He gas is used to cool the wafer. CONSTITUTION:If it is necessary to cool a wafer 5 by sending an He gas between the wafer 5 and an electrode 2, (1) in the case when the electrode 2 in a chamber is used at a normal temperature, the He gas cooled by a refrigerator is fed and (2) in the case when refrigerant is used to cool the electrode 2 in the chamber, the He gas is cooled by a heat exchanger 21 installed to an electrode cooling pipeline 20 as illustrated in FIGURE, and the cooled He gas is fed between the wafer 5 and the electrode 2.

8. 发明专利

JPH0360918B2 失效
公开(公告)号：JPH0360918B2
公开(公告)日：1991-09-18
申请号：JP22623284
申请日：1984-10-26
申请人： APPLIED MATERIALS JAPAN
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO
IPC分类号： C23C16/22 , B01J19/12 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/48 , C30B25/02

9. 发明专利

JPS6338430B2 失效
公开(公告)号：JPS6338430B2
公开(公告)日：1988-07-29
申请号：JP20123084
申请日：1984-09-26
申请人： APPLIED MATERIALS JAPAN
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO , HIRATA TSUGUAKI
IPC分类号： C23C16/44 , B05D3/06 , B05D7/24 , C23C16/442 , C23C16/455 , C23C16/46 , C23C16/48 , C30B25/10 , C30B25/14

10. 发明专利

JPS6280271A VAPOR GROWTH METHOD 失效
公开(公告)号：JPS6280271A
公开(公告)日：1987-04-13
申请号：JP21960785
申请日：1985-10-02
申请人： APPLIED MATERIALS JAPAN
发明人： MAEDA KAZUO , TOKUMASU TOKU , FUKUYAMA TOSHIHIKO , MATSUI FUMIYA
IPC分类号： C23C16/44 , C23C16/40 , C23C16/48
摘要： PURPOSE:To perform vapor growth to approximately thoroughly prevent the generation of particles by preliminarily heating a reactive gas and inert gas, passing the gases on the surface to be treated to form the laminar flow of both gases and discharging the resultant reaction product together with the reactive gaseous flow. CONSTITUTION:The reactive gas is preliminarily heated and is passed like a belt along the surface of a wafer 22 from a reactive gas supply nozzle 24. On the other hand, the gaseous N2 which is the inert gas is preliminarily heated and is passed like a belt to cover the upper part of the reactive gas from a gaseous N2 supply nozzle 38 to form a desired film on the surface of the wafer 22. Since both gases are preliminarily heated to the temp. approximate to the surface temp. of the wafer 22, the generation of the turbulent flow by the ascending gaseous flow between both gases is obviated. Since both gases can be supplied in the laminar flow state the fall of the resultant reaction product formed in the reactive gaseous layer onto the wafer 22 surface and the generation of the particles are obviated 1. The preheated gaseous He is used as the carrier gas for both gases and therefore, the formation and maintenance of the above- mentioned laminar flow are made easier.

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