专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH05166818A WAFER COOLING DEVICE FOR SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH05166818A
公开(公告)日：1993-07-02
申请号：JP32778091
申请日：1991-12-11
申请人： APPLIED MATERIALS JAPAN , FUJITSU LTD
发明人： FUKUYAMA TOSHIHIKO , TSUJI TAKASHI , ONO MASANORI , SUZUKI AKIRA , YANO HIROSHI , IIZUKA KATSUHIKO
IPC分类号： C23C14/50 , H01L21/203 , H01L21/302 , H01L21/3065 , H01L21/324 , H01L23/34
摘要： PURPOSE:To make it possible to control the temperature of a wafer with ease and eliminate product variability by cooling an He gas below a normal temperature in the case when the He gas is used to cool the wafer. CONSTITUTION:If it is necessary to cool a wafer 5 by sending an He gas between the wafer 5 and an electrode 2, (1) in the case when the electrode 2 in a chamber is used at a normal temperature, the He gas cooled by a refrigerator is fed and (2) in the case when refrigerant is used to cool the electrode 2 in the chamber, the He gas is cooled by a heat exchanger 21 installed to an electrode cooling pipeline 20 as illustrated in FIGURE, and the cooled He gas is fed between the wafer 5 and the electrode 2.

2. 发明专利

JPH05163096A TEMPERATURE CONTROL SYSTEM FOR LOW-TEMPERATURE OF ELECTRODE IN VACUUM DEVICE USING REFRIGERATOR IN APPARATUS FOR PRODUCING SEMICONDUCTOR 失效
公开(公告)号：JPH05163096A
公开(公告)日：1993-06-29
申请号：JP32777491
申请日：1991-12-11
申请人： APPLIED MATERIALS JAPAN , FUJITSU LTD
发明人： FUKUYAMA TOSHIHIKO , TSUJI TAKASHI , ONO MASANORI , SUZUKI AKIRA , YANO HIROSHI , ISHIMARU YASUSHI
IPC分类号： C23C14/54 , C30B25/02 , C30B25/12 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/16
摘要： PURPOSE:To obtain a temperature control system for low temperatures of a high-frequency, a microwave, a DC or an AC electrode of a vacuum device using a refrigerator in an apparatus for producing a semiconductor by using a simple apparatus. CONSTITUTION:A refrigerant of a refrigerator 7 is directly circulated to an electrode (cathode) 2 so as to cool a high-frequency, a DC or the AC electrode 2 of a vacuum device using the refrigerator T in an apparatus for producing semiconductors. A supply valve 5 for controlling the flow rate and a bypass valve 6 for performing operation reverse to that of the supply valve are installed and the valves are controlled under the PID control of a thermometer 10. Thereby, the accurate temperature control with excellent thermal efficiency can be carried out.

3. 发明专利

JPH05164627A MEASURING INSTRUMENT FOR TEMPERATURE OF HIGHFREQUENCY ELECTRODE USING THERMOCOUPLE 失效
公开(公告)号：JPH05164627A
公开(公告)日：1993-06-29
申请号：JP32777991
申请日：1991-12-11
申请人： APPLIED MATERIALS JAPAN , FUJITSU LTD
发明人： FUKUYAMA TOSHIHIKO , TSUJI TAKASHI , ONO MASANORI , SUZUKI AKIRA , YANO HIROSHI , NODA SHOZO
IPC分类号： G01K1/14 , G01K1/16 , G01K7/02
摘要： PURPOSE:To measure temperature accurately with a simple constitution. CONSTITUTION:On a high-frequency electrode 1, a heat conducive compound 2 for making thermal contact excellent and a high heat-conductive insulating layer (e.g. aluminum nitride, boron nitride ceramics or the like) 3 for electric insulation are sequentially provided. A thermocouple 4 is further arranged in contact with the high heat-conductive insulating layer 3. A temperature form 6 is provided through a high heat-conductive cutting filter 5 for cutting the high-frequency component propagated through the thermocouple. Since the aluminum nitride is the high heat conductive insulator, the aluminum nitride can be used in contact with the thermocouple. Thus, the highly accurate temperature measurement of the high-frequency electrode can be performed.

4. 发明专利

JPH05166597A LOW TEMPERATURE CONTROL SYSTEM FOR ELECTRODE OF VACUUM DEVICE USING LIQUID NITROGEN IN SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH05166597A
公开(公告)日：1993-07-02
申请号：JP32777791
申请日：1991-12-11
申请人： APPLIED MATERIALS JAPAN , FUJITSU LTD
发明人： FUKUYAMA TOSHIHIKO , TSUJI TAKASHI , ONO MASANORI , SUZUKI AKIRA , YANO HIROSHI , MIHARA SATOSHI
IPC分类号： H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To provide a control system for the electrode of a vacuum device which uses liquid nitrogen in a semiconductor manufacturing device through simple constitution. CONSTITUTION:A refrigerator 3 for reliquefying nitrogen, an electrode 2 for temperature control, and two liquid nitrogen tanks 4, 5 which supply liquid nitrogen to the electrode are connected to one another by a pipe to circulate nitrogen therethrough. A control circuit 11 is provided which controls the refrigerator 3 for reliquefying nitrogen in response to signals input from a sensor 7, 8 for detecting the level of the liquid nitrogen in in each tank and a sensor 14, 15 for detecting pressure, and which also controls valve so that the two liquid nitrogen tanks 4, 5 are switched from one to the other when in use. Since the amount of consumption of the liquid nitrogen can be reduced, the cost can be lowered and temperature control of high accuracy is enabled.

5. 发明专利

JPH055167B2 失效
公开(公告)号：JPH055167B2
公开(公告)日：1993-01-21
申请号：JP12451183
申请日：1983-07-08
申请人： FUJITSU LTD
发明人： FUJIMURA SHUZO , YANO HIROSHI
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065

6. 发明专利

JPH0266943A ETCHING METHOD FOR SILICON NITRIDE FILM 失效
公开(公告)号：JPH0266943A
公开(公告)日：1990-03-07
申请号：JP21877488
申请日：1988-09-01
申请人： FUJITSU LTD
发明人： SAITO TSUTOMU , YANO HIROSHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To etch a silicon nitride film in a satisfactory anisotropic shape without substantially etching a silicon oxide film of a base by reactive ion etching it in a chromium trifluoride etching gas having pressure of 0.3-1.0Torr. CONSTITUTION:A base SiO2 film is formed on an Si substrate 1 by thermally oxidizing, and an Si3N4 film 3 is then formed by a vapor growing (CVD) method. Thereafter, after a resist pattern 4 is formed on the film 3, the substrate is inserted into an RIE device, and the film 3 is selectively etched with 0.4W/cm of power density in CIF3 gas having 0.3Torr using CIF3 as the etching gas. Since the etching rate of the film 3 to the SiO2 film of the CIF3 gas is approx. 17, the thickness DELTAt1 of the base SiO2 film 2 to be reduced by the overetching of approx. 50% is approx. 30Angstrom , and a region in which the film 2 is completely removed is not generated. Accordingly, in case of etching, the substrate 1 is not immediately exposed with ions to undergo damage.

7. 发明专利

JPH0199116A METHOD FOR CONTROLLING HIGH FREQUENCY POWER SOURCE 失效
公开(公告)号：JPH0199116A
公开(公告)日：1989-04-18
申请号：JP25678187
申请日：1987-10-12
申请人： FUJITSU LTD
发明人： YANO HIROSHI , SHIMONAGA MASASHI
IPC分类号： G05F1/66
摘要： PURPOSE:To protect a transistor and to stably output a large electric power by switching an effective value electric power control to an incident electric power control when the ratio of an incident electric power and an effective value electric power goes to the reference value or below. CONSTITUTION:A transistor type high frequency power source has an oscillator 1 and a driver amplifier 2, and an output amplifier 3, since the output of one transistor is about 200W at most, is divided into plural output amplifiers, amplified and thereafter, synthesized. A directionality coupler 4 monitors an incident electric power to a load and a reflecting electric power, a controller 5 can switch to either of an effective value electric power control or an incident electric power control, and when the incident electric power/effective value electric power goes to the reference value, for example, 0.8 or below, the effective value electric power control is switched into the incident electric power electric power control. Thus, a transistor can be protected, the control can be executed so as to output stably the large electric power and the process stabilization of the plasma application can be executed.

8. 发明专利

JPS6454700A HIGH FREQUENCY POWER SOURCE OUTPUT MONITOR CIRCUIT FOR PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPS6454700A
公开(公告)日：1989-03-02
申请号：JP20925587
申请日：1987-08-25
申请人： FUJITSU LTD
发明人： YANO HIROSHI , NODA SHOZO
IPC分类号： G05F1/10 , H05H1/46
摘要： PURPOSE:To obtain an effective power value independently of frequencies by multiplying separated current and voltage with each other. CONSTITUTION:A high frequency signal of a plasma exciting frequency introduced to a terminal 4 is made a current (a) through an amplifier 5, an output circuit 6, and a coil 7 and also made a voltage (b) through a coil 8. The current (a) is branched and supplied to a multiplication circuit 9 and a rectifier circuit 10. The voltage (b) is similarly supplied to the multiplication circuit 9 and a rectifier circuit 11. The current (a) and the voltage (b) are multiplied with each other on real time in the multiplication circuit 9, smoothed, and sent as an effective power signal to a terminal 13. A high frequency output is applied from a terminal 18 to an electrode located in a process chamber.

9. 发明专利

JPS62281424A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPS62281424A
公开(公告)日：1987-12-07
申请号：JP12480586
申请日：1986-05-30
申请人： FUJITSU LTD
发明人： YANO HIROSHI , SAITO TSUTOMU
IPC分类号： H01L21/205 , C23F1/00 , H01L21/302 , H01L21/31
摘要： PURPOSE:To make the intensity of microwaves uniform by composing so that the microwaves are introduced from four directions to a cavity. CONSTITUTION:Microwaves coming into a cavity 14 through waveguides 12 and 13 are introduced to a plasma emission chest 4 through a window 5 to develop plasmas 15 under a designated gas pressure and perform a designated treatment for a sample 8 in the plasma emission chest 4. Such a plasma treatment device is constructed so that the microwaves are introduced in the cavity 14 from four directions. As a result, the intensity of microwaves is so nearly uniform at the inside of cavity 14 that the microwaves introduced into the plasma emission chest 4 through the window 5 have the almost uniform intensity. Thus the plasmas 15 produced in the plasma emission chest 4 are so distributed uniformly that they perform uniform plasma treatment for a wafer 8.

10. 发明专利

JPS62272536A DRY ASHING APPARATUS 失效
公开(公告)号：JPS62272536A
公开(公告)日：1987-11-26
申请号：JP11641886
申请日：1986-05-20
申请人： FUJITSU LTD
发明人： YANO HIROSHI , SAITO TSUTOMU
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To largely suppress an etching with fluorine radical on a base part without so decelerating an ashing velocity by switching gas fed into a plasma light emitting chamber from a mixture gas of CF4 and O2 to only oxygen when the intensity of a light emitting spectrum of a specific wavelength becomes a preset predetermined value or higher. CONSTITUTION:When a resist is ashed by an oxygen radical, a CO light emitting spectrum is generated. Then, a spectrochemical analyzer 17 detects only the intensity of the CO light emitting spectrum, and outputs a detection signal of a level responsive to the detecting intensity. When the intensity of the input detection signal spectrum arrives at a predetermined value, a comparator 18 supplies a control signal of a logic level different from that supplied so far since the input detection signal level becomes a first reference signal level or lower from an input terminal 19 to close a conduit 10 by a solenoid valve 11. Thus, the input of Freon gas (CF4) to a plasma light emitting chamber 6 is stopped, but only oxygen (O2) is fed into the chamber 6 to eliminate an etching with fluorine radical (F*) on the base of a sample 14.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式