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    • 3. 发明专利
    • OPTICAL AXIS ALIGNING DEVICE
    • JPS63127209A
    • 1988-05-31
    • JP27278386
    • 1986-11-18
    • ANRITSU CORPNIPPON TELEGRAPH & TELEPHONE
    • CHIBA TSUTOMUTANAKA MITSUOYOSHINO KAORU
    • G02B6/42
    • PURPOSE:To easily and quickly align the optical axis of a semiconductor PN junction element to that of an optical waveguide without damaging by moving the semiconductor PN junction element by probe opening/closing mechanisms to align the optical axis. CONSTITUTION:Movement of a PN junction element 1 is controlled through a heat sink 23 by probe opening/closing mechanisms 42 and 42' consisting of conductive materials and is controlled by a probe opening/closing mechanism 43 which is orthogonal to mechanisms 42 and 42' and consists of a conductive material. Optical axes of the element 1 and optical waveguide 16 and 16' are aligned if laser beam from optical waveguides 16 and 16' of an optical module are made incident and the element 1 is positioned so that the indicated value of a selecting level meter 15 between probes 41 and 40 connected to mechanisms 43 and 42 is maximum, and in this state, the optical module which fixes the heat sink 23 and a waveguide 18 is generated. By this optional axis alignment free from thermal and mechanical stress, the optical axis of the semiconductor PN junction element is easily and quickly aligned to that of the optical waveguide without damage.
    • 6. 发明专利
    • Etching method by ultraviolet ray and apparatus for the same
    • 紫外线辐射的蚀刻方法及其设备
    • JPS6153731A
    • 1986-03-17
    • JP17518984
    • 1984-08-24
    • Anritsu Corp
    • KOTADO SETSUOCHIBA TSUTOMU
    • H01L21/302C23F4/00
    • PURPOSE: To realize dry etching and makes unnecessary use of photoresist by placing a substance which can generate reactive activated group with irradiation of ultraviolet ray in contact with the surface of material to be processed and irradiating the material to be processed with focused ultraviolet layer.
      CONSTITUTION: A material to be processed 20 is housed within a vessel 4 of etching apparatus using ultraviolet ray, the ultraviolet ray generated from the ultraviolet ray source 10 is transmitted through a transmitting window 5 of such vessel 4. Cl
      2 which generates reactive activated groupwith irradiation of ultraviolet ray to a substance 20 to be processed in supplied to the vessel 4 after adjustment with needle valve from the gas supply port 6 provided to the vessel 4. Moreover, reaction byproducts generated from the surface of substance 20 to be processed are absorbed with a reaction byproduct exhaust port 7 to the outside of vessel. The substance to be processed 20 is irradiated with ultraviolet laser emitted from the light source 10 focused through reflection mirror 12, collimeter lens 13 from the dry-etching and thereby the mask using photoresist is unnecessitated.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:为了实现干蚀刻,并且通过将能够产生反应性活性基团的物质与被处理材料表面接触的紫外线照射放置在被照射被处理材料的聚焦紫外线层上来实现光刻胶的不必要的使用。 构成:将待处理材料20放置在使用紫外线的蚀刻装置的容器4内,由紫外线源10产生的紫外线透过这种容器4的透光窗5。 的紫外线照射到被提供给容器4的物质20上,用针阀从设置在容器4上的气体供给口6调节后进行。另外,由待处理物质20的表面产生的反应副产物被 反应副产物排气口7到容器的外部。 用干蚀刻从被反射镜12,碰撞透镜13聚焦的光源10发出的紫外线激光照射待处理物体20,从而不需要使用光致抗蚀剂的掩模。