专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP4699822B2 Semiconductor module - le method of manufacturing 有权
公开(公告)号：JP4699822B2
公开(公告)日：2011-06-15
申请号：JP2005195447
申请日：2005-07-04
申请人：株式会社豊田中央研究所 , 清仁石田
发明人：雄二八木 , 郁雄大沼 , 靖山田 , 清仁石田 , 祐司西部 , 佳和高久
IPC分类号： H01L21/52 , B23K1/00 , B23K35/28 , C22C18/04 , H01L23/40
CPC分类号： H01L24/32 , H01L2924/13055 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module where solder bonding is realized for which high heat resistance and high durability are made possible by an easy-to-manufacture alloy for solder bonding. SOLUTION: The back surface electrode 26 of a semiconductor device 20 and the surface conductive layer 52 of a substrate 50 are joined by a metal layer, and at least a part of the metal layer is an alloy layer whose base material is Zn. The alloy layer containing Zn contains Al for 9-20% relative to Zn. Further, at least a part of the metal layer is formed of alloy layers 40 and 44 containing Cu other than Zn and Al. COPYRIGHT: (C)2007,JPO&INPIT

2. 发明专利

JP4592486B2 Semiconductor module 有权
公开(公告)号：JP4592486B2
公开(公告)日：2010-12-01
申请号：JP2005126106
申请日：2005-04-25
申请人：株式会社豊田中央研究所 , 清仁石田
发明人：雄二八木 , 郁雄大沼 , 靖山田 , 清仁石田 , 祐司西部 , 佳和高久
IPC分类号： H01L21/52
CPC分类号： H01L24/29 , H01L24/32 , H01L2224/83101 , H01L2924/1306 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor module which relieves a thermal stress applying on a solder layer and enhances a reliability. SOLUTION: The semiconductor module 10 is provided with a structure in which an upper layer 56 of a CIC substrate 50, a solder layer 60, and a back electrode of a semiconductor device 90 are sequentially joined. An alloy used for the solder layer 60 of the semiconductor module 10 comprises a first metal 62 composed of Bi which decides the melting point of the solder layer 60 substantially, and a second metal 64 which mixedly exists in the first metal 62 and has properties of a martensitic transformation. The second metal 64 is composed of an alloy of Mn, Al and Cu. As a result, it is possible to obtain the semiconductor module 10 which relieves an applied stress, based on an external force by a martensitic mechanism or superelastic mechanism formed in the second metal 64 and enhances a reliability. COPYRIGHT: (C)2007,JPO&INPIT

3. 发明专利

JP5224430B2 Power semiconductor module 有权
公开(公告)号：JP5224430B2
公开(公告)日：2013-07-03
申请号：JP2006250622
申请日：2006-09-15
申请人：株式会社豊田中央研究所 , 国立大学法人東北大学
发明人：靖山田 , 雄二八木 , 祐司西部 , 尚史高尾 , 清仁石田 , 郁雄大沼 , 佳和高久
IPC分类号： H01L21/52 , B23K35/26 , H01L23/12
CPC分类号： H01L2224/29113

4. 发明专利

JP4822526B2 Zygote 有权
公开(公告)号：JP4822526B2
公开(公告)日：2011-11-24
申请号：JP2006250621
申请日：2006-09-15
申请人：国立大学法人東北大学 , 株式会社豊田中央研究所
发明人：雄二八木 , 郁雄大沼 , 靖山田 , 清仁石田 , 佳和高久 , 尚史高尾
IPC分类号： H05K3/34 , B23K1/00 , B23K1/20 , B23K35/26 , B23K101/42 , C22C12/00 , H01L23/36 , H01L23/373 , H05K1/02
CPC分类号： H01L24/83 , H01L2224/32225 , H01L2224/83101 , H01L2924/351 , H01L2924/00

5. 发明专利

JP5265259B2 Ferromagnetic shape memory alloy sintered body and a method for manufacturing 有权
公开(公告)号：JP5265259B2
公开(公告)日：2013-08-14
申请号：JP2008172735
申请日：2008-07-01
申请人：株式会社豊田中央研究所 , 国立大学法人東北大学
发明人：伸田島 , 宏之川浦 , 亮介貝沼 , 清仁石田 , 理恵梅津 , 恒平伊藤
IPC分类号： C22C19/03 , B22F1/00 , B22F3/00 , C22C1/04 , C22F1/00 , C22F1/10
摘要： PROBLEM TO BE SOLVED: To provide a ferromagnetic shape memory alloy having high mechanical strength, and to provide a manufacturing method which can easily manufacture the ferromagnetic shape memory alloy having high mechanical strength. SOLUTION: The ferromagnetic shape memory alloy sintered compact is obtained by sintering the alloy powder of a ferromagnetic shape memory alloy comprising manganese (Mn) by 25 to 50 atom%, at least one metal selected from the group consisting of indium (In), tin (Sn) and antimony (Sb) by 5 to 18 atom% in total, cobalt (Co) and/or iron (Fe) by 0.1 to 15 atom%, and the balance nickel (Ni) with inevitable impurities; wherein the whole is 100 atom%, and has a porosity of 2 to COPYRIGHT: (C)2010,JPO&INPIT

6. 发明专利

JP5160201B2 Solder material and a method of manufacturing the same, assembly and method of manufacturing the same, as well as the power semiconductor module and a method of manufacturing the same 有权
公开(公告)号：JP5160201B2
公开(公告)日：2013-03-13
申请号：JP2007300792
申请日：2007-11-20
申请人：株式会社豊田中央研究所 , 国立大学法人東北大学 , トヨタ自動車株式会社
发明人：靖山田 , 雄二八木 , 佳和高久 , 郁雄大沼 , 清仁石田 , 貴司渥美 , 郁朗中川 , 幹夫白井
IPC分类号： B23K35/14 , B23K35/28 , B23K35/40 , H01L23/36
CPC分类号： C22C18/04 , B23K35/282 , B23K35/40 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29118 , H01L2224/29298 , H01L2224/32014 , H01L2224/83051 , H01L2224/83101 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0134 , H01L2924/0135 , H01L2924/014 , H01L2924/1579 , H01L2924/19042 , H01L2924/351 , Y10T428/12222 , H01L2924/00 , H01L2924/01049 , H01L2924/01028 , H01L2924/3512 , H01L2924/00015 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/83205
摘要： A zinc based solder material 55 of the present invention is prepared by providing on the surface of a zinc based material 50, from which an oxide film 501 has been removed or at which an oxide film 501 does not exist, with a coating layer 51 containing primarily a metal whose oxide is more easily reducible than the oxide film 501. In a joined body and a power semiconductor module of the present invention, the zinc based solder material 55 is used in the joining portion, and after joining, the coating layer 51 does not exist.

7. 发明专利

JP5203906B2 A method of manufacturing a Bi-containing solder foil, Bi-containing solder foil, assembly, and power semiconductor module 有权
公开(公告)号：JP5203906B2
公开(公告)日：2013-06-05
申请号：JP2008308653
申请日：2008-12-03
申请人：株式会社豊田中央研究所 , 国立大学法人東北大学 , トヨタ自動車株式会社
发明人：靖山田 , 清仁石田 , 郁雄大沼 , 佳和高久 , 郁朗中川 , 貴司渥美
IPC分类号： B23K35/40 , B22F1/00 , B22F3/18 , B23K35/14 , B23K35/26 , C22C9/05 , C22C12/00 , H01L23/36 , H01L23/373 , H01L25/07 , H01L25/18 , H05K3/34
CPC分类号： H01L24/27 , H01L24/29 , H01L2224/83101 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing Bi-containing solder foil and Bi-containing solder foil, and to provide a joined body that is highly heat resistant and accurately welded and a power semiconductor module. SOLUTION: In the method of manufacturing Bi-containing solder foil, powder of a solder material containing bismuth (Bi) is formed into a sheet by a powder rolling method. The ratio of a long side and a short side in the powder of the solder material is suitably ≥1.2 and ≤3.0 while the mean particle diameter of the powder is suitably ≥5 μm and ≤200 μm. The rolling by the powder rolling method is desirably performed at ≥-20°C and ≤269°C. Also, in the joined body and the power semiconductor module, the Bi-containing solder foil is used in the weld zone. COPYRIGHT: (C)2010,JPO&INPIT

8. 发明专利

JP5112132B2 Method of manufacturing a ferromagnetic shape memory alloy and the ferromagnetic shape memory alloy sintered body 有权
公开(公告)号：JP5112132B2
公开(公告)日：2013-01-09
申请号：JP2008080485
申请日：2008-03-26
申请人：株式会社豊田中央研究所 , 国立大学法人東北大学
发明人：伸田島 , 宏之川浦 , 亮介貝沼 , 清仁石田 , 航伊東
IPC分类号： C22C19/03 , B22F1/00 , B22F3/14 , C22C1/00 , H01F1/04
摘要： PROBLEM TO BE SOLVED: To provide a ferromagnetic shape-memory alloy which includes Ni, Mn, at least one element selected from the group consisting of In, Sn and Sb, Co and/or Fe, and unavoidable impurities, and has high mechanical hardness, and to provide a method for easily manufacturing the ferromagnetic shape-memory alloy which has the high mechanical hardness. SOLUTION: The ferromagnetic shape-memory alloy A has a two-phase structure comprising: a first phase 1 which comprises 25 to 50 atom% Mn, at least one element selected from the group consisting of In, Sn and Sb in a total amount of 5 to 18 atom%, 0.1 to 15 atom% Co and/or Fe, and the balance Ni with unavoidable impurities, and has a bcc structure showing martensitic transformation; and a second phase 2 which surrounds the first phase 1 and has an fcc structure. The second phase 2 having high toughness and high strength surrounds the first phase 1 to inhibit the first phase 1 from being fractured and enhance the mechanical strength of the ferromagnetic shape-memory alloy A. COPYRIGHT: (C)2010,JPO&INPIT

9. 发明专利

JP4964009B2 Power semiconductor module 有权
公开(公告)号：JP4964009B2
公开(公告)日：2012-06-27
申请号：JP2007108311
申请日：2007-04-17
申请人：トヨタ自動車株式会社 , 国立大学法人東北大学 , 株式会社豊田中央研究所
发明人：郁朗中川 , 雄二八木 , 郁雄大沼 , 靖山田 , 貴司渥美 , 幹夫白井 , 清仁石田 , 佳和高久
IPC分类号： H01L25/07 , H01L23/40 , H01L25/18
CPC分类号： H01L23/3735 , H01L23/473 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/072 , H01L2224/29111 , H01L2224/29113 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83447 , H01L2224/838 , H01L2224/83805 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/1579 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01083 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205
摘要： Provided is a power semiconductor module in which two components are bonded by a Bi based solder material. A Cu layer is provided on the surfaces thereof to be bonded by the Bi based solder material on the two-component. Two components, i.e., the components to be bonded, are a combination of a semiconductor element and an insulating part, or a combination of an insulating part and a radiator plate. The insulating part is composed of a Cu/SiNx/Cu laminated body.

10. 发明专利

JP4339941B2 Guide the core material and the guide wire for the wire, as well as methods for their preparation 失效
标题翻译：空值
公开(公告)号：JP4339941B2
公开(公告)日：2009-10-07
申请号：JP18949098
申请日：1998-07-03
申请人：芳一石井 , 清仁石田
发明人：芳一石井 , 清仁石田 , 亮介貝沼
IPC分类号： A61L31/00 , A61M25/01
摘要： PROBLEM TO BE SOLVED: To gradually change the rigidity of a core material, and provide excellent insertion-operability and torque transmission property by a method wherein at least one part of the core material for a guide wire wherein the base end part has a high rigidity, and the tip end part has a lower rigidity than the base end part, is formed of a copper-based alloy wire wherein Mn, Al, remainder Cu and inevitable impurities are blended by specified amounts. SOLUTION: For a core material for a guide wire, having favorable insertion- operability and torque transmission property by a method wherein the tip end part has a flexibility, and the base end part has proper elasticity and rigidity, for the guide wire which is used when a catheter is introduced to a specified area of a blood vessel or the like, and stored there, for at least one part of the core material, a copper-based alloy wire comprising 5-20 wt.% of Mn, 3-10 wt.% of Al, a remainder Cu and inevitable impurities, is used. For this copper- based alloy wire, the total of 0.001-10 wt.% of one kind, or two kinds or more which are selected from a group comprising Ni, Co, Fe, Ti, V, Cr, Si, Nb, Mo, Sn, Ag, W, Mg, Pi, Zr and a misch metal or the like may be further contained.
摘要翻译：要解决的问题：为了逐渐改变芯材的刚性，并且通过一种方法提供优异的插入操作性和扭矩传递性，其中用于导丝的芯材的至少一部分，其中基端部具有高刚性并且前端部的刚性比基端部低，由铜基合金线形成，其中Mn，Al，余量Cu和不可避免的杂质以规定量混合。解决方案：对于用于导丝的芯材，具有良好的插入操作性和扭矩传递特性，其中前端部具有柔性，并且基端部具有适当的弹性和刚性，对于所使用的导丝当将导管引入血管等的特定区域并存储在其中时，对于芯材的至少一部分，包含5-20重量％的Mn，3-10的铜基合金线使用Al的重量％，余量为Cu和不可避免的杂质。对于这种铜基合金丝，选自Ni，Co，Fe，Ti，V，Cr，Si，Nb，Mo中的一种或两种以上的总量为0.001-10重量％可以进一步包含Sn，Ag，W，Mg，Pi，Zr和混合稀土金属等。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式