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1. 发明专利

JP2014130672A Magnetic head, magnetic head assembly, and magnetic recording and reproducing device 审中-公开
标题翻译：磁头，磁头组件和磁记录和再现装置
公开(公告)号：JP2014130672A
公开(公告)日：2014-07-10
申请号：JP2013234725
申请日：2013-11-13
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMIZU MARIKO , KOI KATSUHIKO , MURAKAMI SHUICHI , YUASA HIROMI
IPC分类号： G11B5/31
摘要： PROBLEM TO BE SOLVED: To lower a critical current density for maintaining high frequency magnetic field and starting oscillation of an oscillation layer.SOLUTION: A magnetic head of an embodiment includes a spin torque oscillator arranged between a main magnetic pole and an auxiliary magnetic pole. The spin torque oscillator includes a down-spin injection layer, a first intermediate layer, an oscillation layer, a second intermediate layer, and an up-spin injection layer. The down-spin injection layer includes a first perpendicular magnetization film and a first interface magnetic layer, which are formed on one of the main magnetic pole and the auxiliary magnetic pole. The first interface magnetic layer used in a first embodiment includes: one element being at least one of Fe, Co, and Ni; and at least one element selected from a group consisting of Cr, V, Mn, Ti, and Se. The up-spin injection layer includes a second perpendicular magnetization film.
摘要翻译：要解决的问题：降低用于维持高频磁场和振荡层的振荡的临界电流密度。解决方案：实施例的磁头包括布置在主磁极和辅助磁极之间的自旋扭矩振荡器。自旋扭矩振荡器包括下自旋注入层，第一中间层，振荡层，第二中间层和上旋涂层。下自旋注入层包括形成在主磁极和辅助磁极之一上的第一垂直磁化膜和第一界面磁性层。在第一实施例中使用的第一界面磁性层包括：一个元素是Fe，Co和Ni中的至少一个; 以及选自Cr，V，Mn，Ti和Se中的至少一种元素。上旋涂层包括第二垂直磁化膜。

2. 发明专利

JP2013214753A Strain sensor, pressure sensor, blood pressure sensor, and structural health monitor sensor 有权
标题翻译：应变传感器，压力传感器，血压传感器和结构健康监测传感器
公开(公告)号：JP2013214753A
公开(公告)日：2013-10-17
申请号：JP2013096808
申请日：2013-05-02
申请人： Toshiba Corp , 株式会社東芝
发明人： DEVIN GIDDINGS , FUKUZAWA HIDEAKI , FUJI YOSHIHIKO , HARA MICHIKO , YUASA HIROMI
IPC分类号： H01L43/08 , G01B7/16 , G11B5/39 , H01L29/84 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a high-sensitive strain sensor, a high-sensitive pressure sensor, a high-sensitive blood pressure sensor, and a high-sensitive structural health monitor sensor.SOLUTION: A strain sensor includes: a substrate; a stack fixed on the substrate and having a first magnetic layer containing one kind or more metals selected from the group composed of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer and having a different composition from that of the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer; and a pair of electrodes passing a current to the stack. By external strain applied to the stack, the first magnetic layer and the second magnetic layer are both rotated by magnetization, and the external strain is detected by a resistance change between the electrodes associated with the magnetization rotation of the first magnetic layer and the second magnetic layer.
摘要翻译：要解决的问题：提供高灵敏度应变传感器，高灵敏度压力传感器，高灵敏度血压传感器和高灵敏度结构健康监测传感器。解决方案：应变传感器包括：基板; 固定在所述基板上并且具有包含选自铁，钴和镍中的一种以上的金属的第一磁性层的堆叠，堆叠在所述第一磁性层上并具有与所述第二磁性层不同的组成的第二磁性层第一磁性层和设置在第一磁性层和第二磁性层之间的间隔层; 以及将电流传递到堆叠的一对电极。通过施加到堆叠的外部应变，第一磁性层和第二磁性层都被磁化转动，并且通过与第一磁性层和第二磁性层的磁化旋转相关联的电极之间的电阻变化来检测外部应变层。

3. 发明专利

JP2013205403A Pressure sensor and microphone 有权
标题翻译：压力传感器和麦克风
公开(公告)号：JP2013205403A
公开(公告)日：2013-10-07
申请号：JP2012078361
申请日：2012-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUZAWA HIDEAKI , EBATO AKIHIKO , NISHIMURA OSAMU , HARA MICHIKO , YUASA HIROMI , FUJI YOSHIHIKO , KII MASAYUKI , FUJISAWA EIZO
IPC分类号： G01L9/16 , H04R15/00
CPC分类号： G01L1/12 , G01L1/125 , G01L9/005 , G01L9/008 , G01L9/16
摘要： PROBLEM TO BE SOLVED: To provide a pressure sensor and a microphone, having high sensitivity.SOLUTION: The pressure sensor includes a substrate and a sensor part provided on the substrate. The sensor part includes a transducing thin film, and first and second strain sensor elements. The transducing thin film has a film surface and is flexible. The first strain sensor element is provided at a position different from the center of gravity of the film surface on the film surface. The first strain sensor element includes first and second magnetic layers, and a first nonmagnetic interlayer provided therebetween. The second strain sensor element is provided at a position separated from the first strain sensor element and different from the center of gravity on the film surface. The second strain sensor element includes third and fourth magnetic layers and a second nonmagnetic interlayer provided therebetween. A straight line passing through the first and second strain sensor elements passes the center of gravity.
摘要翻译：要解决的问题：提供具有高灵敏度的压力传感器和麦克风。解决方案：压力传感器包括基板和设置在基板上的传感器部分。传感器部分包括传感薄膜以及第一和第二应变传感器元件。换能薄膜具有膜表面并且是柔性的。第一应变传感器元件设置在与膜表面上的膜表面的重心不同的位置。第一应变传感器元件包括第一和第二磁性层以及设置在它们之间的第一非磁性中间层。第二应变传感器元件设置在与第一应变传感器元件分离并且不同于膜表面上的重心的位置处。第二应变传感器元件包括第三和第四磁性层以及设置在它们之间的第二非磁性中间层。穿过第一和第二应变传感器元件的直线通过重心。

4. 发明专利

JP2012176294A Blood pressure sensor 有权
标题翻译：血压传感器
公开(公告)号：JP2012176294A
公开(公告)日：2012-09-13
申请号：JP2012138181
申请日：2012-06-19
申请人： Toshiba Corp , 株式会社東芝
发明人： YUASA HIROMI , FUKUZAWA HIDEAKI , FUJI YOSHIHIKO , DEVIN GIDDINGS , HARA MICHIKO , MURAKAMI SHUICHI
IPC分类号： A61B5/022
摘要： PROBLEM TO BE SOLVED: To provide a blood pressure sensor for measuring a blood pressure with high sensitivity and continuous way.SOLUTION: A blood pressure sensor includes: a substrate mounted on a blood pressure measurement part of a subject and bent to generate a tensile stress at least in one direction; a first electrode provided on the substrate; a fixed magnetic layer provided on the first electrode and having magnetization facing in one direction; a nonmagnetic layer provided on the fixed magnetic layer; a magnetic free layer provided on the nonmagnetic layer and having variable magnetization; and a second electrode provided on the magnetic free layer. The magnetization direction of the magnetic free layer faces different from the first direction in which the tensile stress is generated and from a direction perpendicular to the first direction.
摘要翻译：要解决的问题：提供一种用于以高灵敏度和连续的方式测量血压的血压传感器。解决方案：血压传感器包括：安装在受试者的血压测量部分上并弯曲以至少在一个方向产生拉伸应力的基底; 设置在所述基板上的第一电极; 固定磁性层，设置在所述第一电极上并具有朝向一个方向的磁化; 设置在固定磁性层上的非磁性层; 设置在非磁性层上并具有可变磁化强度的无磁性层; 以及设置在无磁层上的第二电极。磁性自由层的磁化方向与产生拉伸应力的第一方向和垂直于第一方向的方向不同。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012169448A Magnetoresistance effect element, magnetic head assembly, and magnetic recording/reproducing device 有权
标题翻译：磁阻效应元件，磁头组件和磁记录/再现装置
公开(公告)号：JP2012169448A
公开(公告)日：2012-09-06
申请号：JP2011029021
申请日：2011-02-14
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJI YOSHIHIKO , HARA MICHIKO , FUKUZAWA HIDEAKI , YUASA HIROMI , MURAKAMI SHUICHI
IPC分类号： H01L43/10 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , G01R33/093 , G11B5/3906 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which has a sufficient MR ratio, and a method for manufacturing the same.SOLUTION: A magnetoresistance effect element of the present invention comprises: a laminate provided with a first magnetic layer 14, a second magnetic layer 18, and a spacer layer 16 provided between the first magnetic layer 14 and the second magnetic layer 18; and a pair of electrodes 11 and 20 for making a current flow perpendicularly to a film surface of the laminate. The spacer layer 16 includes an oxide layer 21 containing at least one element selected from Zn, In, Sn, and Cd, and at least one element selected from Fe, Co, and Ni.
摘要翻译：要解决的问题：提供具有足够的MR比的磁阻效应元件及其制造方法。解决方案：本发明的磁阻效应元件包括：设置有设置在第一磁性层14和第二磁性层18之间的第一磁性层14，第二磁性层18和间隔层16的层压体; 以及用于使电流垂直于层叠体的膜表面的一对电极11和20。间隔层16包括含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物层21和选自Fe，Co和Ni中的至少一种元素。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2008244112A Magnetoresistive effect element, magnetic head, magnetic memory device, and magnetic memory 有权
标题翻译：磁感应元件，磁头，磁记忆装置和磁记忆
公开(公告)号：JP2008244112A
公开(公告)日：2008-10-09
申请号：JP2007082013
申请日：2007-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO JUNICHI , FUKUZAWA HIDEAKI , YUASA HIROMI , FUJI YOSHIHIKO
IPC分类号： H01L43/08 , G11B5/39 , H01L21/8246 , H01L27/105
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3932 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which avoids the employment of a laminated structure of a pin layer, a spacer layer and a free layer unlike a prior art magnetoresistive effect element, and also to provide a magnetic head and a magnetic memory using the element. SOLUTION: In the magnetoresistive effect element including first and second magnetic layers formed to vertically sandwich a spacer formed of at least one of an oxide, nitrogen, an oxinitride and metal therebetween, magnetic domain control is carried out by a bias magnetic field from a current bias generator located adjacent to a spacer layer or by exchange coupling from an exchange coupling layer formed contacting with both ends of the spacer layer on its main surface other than a reproduction magnetism-sensitive part, to thereby suppress the generation of magnetic noise. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁阻效应元件，其避免采用与现有技术的磁阻效应元件不同的针层，间隔层和自由层的叠层结构，并且还提供磁头和使用该元件的磁记忆体。解决方案：在包括形成为垂直夹持由氧化物，氮，氮氧化物和金属中的至少一种形成的间隔物的第一和第二磁性层的磁阻效应元件中，磁畴控制通过偏置磁场来自与间隔层相邻的电流偏置发生器，或者通过与形成在与再生磁敏感部分以外的主表面上的间隔层的两端接触形成的交换耦合层的交换耦合，从而抑制磁噪声的产生。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007173476A Magnetoresistive effect element and its manufacturing method 有权
标题翻译：磁电效应元件及其制造方法
公开(公告)号：JP2007173476A
公开(公告)日：2007-07-05
申请号：JP2005368463
申请日：2005-12-21
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUZAWA HIDEAKI , YUASA HIROMI , FUJI YOSHIHIKO , IWASAKI HITOSHI
IPC分类号： H01L43/12 , G01R33/09 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01F41/305 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3166 , G11B5/398 , G11B5/3983 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08 , H01L43/12 , Y10T428/1121
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element improved in reliability, and to provide its manufacturing method. SOLUTION: Layers are formed in the order of a first magnetic layer 14, a spacer layer 16, and a second magnetic layer 18 having a layer treated by ion, plasma, or heat. The second magnetic layer is treated by stress adjustment with the ion, etc., so that film residue stress is reduced in an electric current constrictor. Thus, reliability is improved in the magnetoresistive effect element. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可靠性提高的磁阻效应元件，并提供其制造方法。解决方案：层以第一磁性层14，间隔层16和具有通过离子，等离子体或热处理的层的第二磁性层18的顺序形成。通过用离子等进行应力调整处理第二磁性层，从而在电流限制器中减少膜残余应力。因此，磁阻效应元件的可靠性得到改善。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007115960A Manufacturing method of magnetoresistive element 有权
标题翻译：磁电元件的制造方法
公开(公告)号：JP2007115960A
公开(公告)日：2007-05-10
申请号：JP2005306975
申请日：2005-10-21
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJI YOSHIHIKO , FUKUZAWA HIDEAKI , YUASA HIROMI , IWASAKI HITOSHI
IPC分类号： H01L43/12 , G11B5/39 , H01L43/08 , H01L43/10
CPC分类号： C23C8/02 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/34 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/3455 , C23C28/42 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F41/305
摘要： PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a magnetoresistive element having a proper area resistance RA and a high MR changing factor. SOLUTION: The magnetoresistive element has a fixed-magnetization layer wherein its magnetized direction is fixed substantially in a direction, a free-magnetization layer wherein its magnetized direction is changed to an external magnetic field, an insulating layer interposed between the fixed- and free-magnetization layers, and a spacer layer including a current path passed through the insulating layer. In its manufacturing method, there are performed in succession when forming the spacer layer a process for forming a non-magnetic first metal layer for forming therein the current path, a process for forming on the non-magnetic first metal layer a second metal layer to be converted into the insulating layer, a first oxidizing process for irradiating an ion beam or an RF plasma on the second metal layer, and a second oxidizing process for oxidizing the second metal layer in the oxidizing partial pressure less or equal to one tenth of the oxidizing partial pressure of the first oxidizing process. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够制造具有适当的面积电阻RA和高MR变化因子的磁阻元件的方法。解决方案：磁阻元件具有固定磁化层，其磁化方向基本上固定在其磁化方向变为外部磁场的自由磁化层的方向上，插入在固定磁化层之间的绝缘层，和自由磁化层，以及包括通过绝缘层的电流路径的间隔层。在其制造方法中，在形成间隔层时，连续地进行形成用于在其中形成电流路径的非磁性第一金属层的工序，在非磁性第一金属层上形成第二金属层的工序被转换成绝缘层，用于在第二金属层上照射离子束或RF等离子体的第一氧化工艺和用于将氧化分压中的第二金属层氧化成小于或等于第二金属层的十分之一的第二氧化工艺氧化第一氧化过程的分压。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007096105A Magnetoresistance effect element, magnetoresistance effect head, magnetic storage device and magnetic memory 审中-公开
标题翻译：磁阻效应元件，磁阻效应头，磁存储器件和磁记忆
公开(公告)号：JP2007096105A
公开(公告)日：2007-04-12
申请号：JP2005285240
申请日：2005-09-29
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUZAWA HIDEAKI , TAKASHITA MASAHIRO , YUASA HIROMI , FUJI YOSHIHIKO , IWASAKI HITOSHI
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element for reducing noise caused by spin transfer torque, a magnetoresistance effect head, a magnetic storage device, and a magnetic memory. SOLUTION: Inside a magnetization fixing layer or a magnetization free layer of the magnetoresistance effect element having the magnetization fixing layer, a non-magnetic layer and the magnetization free layer, a layer including one of Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is arranged. COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2006332340A Magnetoresistance effect element, magnetic head, magnetic recording/reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻效应元件，磁头，磁记录/再现装置和磁记忆
公开(公告)号：JP2006332340A
公开(公告)日：2006-12-07
申请号：JP2005154023
申请日：2005-05-26
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUZAWA HIDEAKI , YUASA HIROMI , IWASAKI HITOSHI
IPC分类号： H01L43/08 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： G11B5/3929 , G11B5/3903 , G11B5/3932 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01F10/3263 , H01F10/3272 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which can obtain high MR changing rate corresponding to high density record while keeping a low resistance.
SOLUTION: The magnetoresistance effect element has three or more metallic magnetic layers, a connection layer provided among the three or more metallic magnetic layers and an electrode for feeding a current in the orthogonal direction to the metallic magnetic layer and the connection layer. The magnetizing direction of a lowermost metallic magnetic layer or an uppermost metallic magnetic layer of the three or more metallic magnetic layers is fixed, and the magnetizing direction of the middle metallic magnetic layer is twisted so that the magnetizing direction of the lowermost metallic magnetic layer is almost orthogonal to the magnetizing direction of the uppermost metallic magnetic layer when the external magnetic field is zero.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁阻效应元件，其可以在保持低电阻的同时获得对应于高密度记录的高MR变化率。解决方案：磁阻效应元件具有三个或更多个金属磁性层，设置在三个或更多个金属磁性层之间的连接层和用于在与金属磁性层和连接层正交的方向上馈送电流的电极。三个以上的金属磁性层的最下层的金属磁性体层或最上层的金属磁性层的磁化方向被固定，中间的金属磁性层的磁化方向被扭转，使得最下面的金属磁性层的磁化方向为当外部磁场为零时几乎与最上面的金属磁性层的磁化方向正交。版权所有（C）2007，JPO＆INPIT

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