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1. 发明专利

JP2014241450A 半導体基板の超臨界乾燥方法および基板処理装置有权
标题翻译：半导体基板的超临界干燥方法和基板处理装置
公开(公告)号：JP2014241450A
公开(公告)日：2014-12-25
申请号：JP2014189608
申请日：2014-09-18
申请人：株式会社東芝 , Toshiba Corp
发明人： SATO YOHEI , OGUCHI HISASHI , TOMITA HIROSHI , HAYASHI HIDEKAZU , KITAJIMA YUKIKO
IPC分类号： H01L21/304
摘要：【課題】半導体基板上に生じるパーティクルを低減すると共に、乾燥処理に要する時間を短縮することができる半導体基板の超臨界乾燥方法を提供する。【解決手段】本実施形態によれば、微細パターンが形成された半導体基板の純水リンス後に、半導体基板の表面を水溶性有機溶媒に置換し、水溶性有機溶媒に濡れた状態でチャンバ内に導入する。そして、チャンバ内の温度を昇温して、水溶性有機溶媒を超臨界状態にする。その後、チャンバ内を純水が液化しない温度に保ちながら圧力を下げ、超臨界状態の水溶性有機溶媒を気体に変化させてチャンバから排出し、半導体基板を乾燥させる。【選択図】図3
摘要翻译：要解决的问题：提供半导体衬底的超临界干燥方法，能够减少在半导体衬底上产生的颗粒并减少干燥处理所需的时间。解决方案：半导体衬底的超临界干燥方法包括以下步骤：冲洗通过使用纯水，形成有微细图案的半导体衬底; 然后用水溶性有机溶剂代替半导体衬底表面上的纯水; 然后将半导体衬底用水溶性有机溶剂引入腔室; 然后增加室内的温度，使水溶性有机溶剂达到超临界状态; 然后在室内的温度保持在纯水不液化的温度下降低室内的压力; 将超临界状态的水溶性有机溶剂变为气体，将气体排出室外; 并干燥半导体衬底。

2. 发明专利

JP2014045126A Method and apparatus for manufacturing functional element 有权
标题翻译：制造功能元件的方法和装置
公开(公告)号：JP2014045126A
公开(公告)日：2014-03-13
申请号：JP2012187623
申请日：2012-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , OGUCHI HISASHI , YOSHIMIZU YASUTO , TANAKA YUSUKE
IPC分类号： H01L27/28 , H01L27/105 , H01L29/06 , H01L45/00 , H01L49/00 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0098 , B82Y10/00 , G11C13/0016 , H01L21/02057 , H01L21/02115 , H01L21/02301 , H01L51/0007 , H01L51/0017 , H01L51/0029 , H01L51/0591 , H01L51/56
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a functional element, which forms a uniform organic layer on the surface of metal electrodes facing each other across a nanogap.SOLUTION: The method for manufacturing a functional element according to an embodiment fills a space between a first electrode and a second electrode formed facing the first electrode with a solvent in which organic molecules are dispersed and to which a hydrogen gas has been added, to form an organic layer containing the organic molecules between the first electrode and the second electrode.
摘要翻译：要解决的问题：提供一种制造功能元件的方法，该功能元件在金属电极的表面上形成均匀的有机层，所述金属电极的表面跨越纳米凹槽。解决方案：根据实施例的功能元件的制造方法填充空间在第一电极和第二电极之间形成面向第一电极的溶剂，其中有机分子被分散并已加入氢气的溶剂形成含有第一电极和第二电极之间的有机分子的有机层。

3. 发明专利

JP2012238711A Deposit removing method 有权
标题翻译：沉积物去除方法
公开(公告)号：JP2012238711A
公开(公告)日：2012-12-06
申请号：JP2011106464
申请日：2011-05-11
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社 , Toshiba Corp , 株式会社東芝
发明人： TAWARA SHIGERU , NISHIMURA EIICHI , TOMITA HIROSHI , OIWA NORIHISA , OGUCHI HISASHI , OMURA MITSUHIRO
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/304
CPC分类号： B05D3/145 , H01L21/02057 , H01L21/02063 , H01L21/31116
摘要： PROBLEM TO BE SOLVED: To provide a deposit removing method which can efficiently remove a deposit and inhibit damages to a silicon dioxide of a structure in a pattern regardless of a length of standing time after an etching treatment.SOLUTION: A deposit removing method of removing a deposit deposited on a surface of a pattern formed on a substrate by etching, comprises: an oxygen plasma processing step of exposing the substrate to an oxygen plasma while heating the substrate; and a cycle processing step of repeatedly performing, after the oxygen plasma processing step, a plurality of cycles of a first period of exposing the substrate to an atmosphere of a mixed gas of a hydrogen fluoride gas and an alcohol gas in a processing chamber and a partial pressure of the alcohol gas is set at a first partial pressure, and a second period of venting the processing chamber and the partial pressure of the alcohol gas is set at a second partial pressure lower than the first partial pressure.
摘要翻译：要解决的问题：提供一种沉积物去除方法，其可以有效地去除沉积物并且抑制对图案中的结构的二氧化硅的损伤，而不管蚀刻处理后的静置时间长短如何。解决方案：通过蚀刻去除沉积在形成在衬底上的图案的表面上的沉积物的沉积物去除方法包括：氧等离子体处理步骤，在加热衬底的同时将衬底暴露于氧等离子体; 以及循环处理步骤，在氧等离子体处理步骤之后，在处理室中重复进行使基板暴露于氟化氢气体和醇气体的混合气体的第一周期的多个循环，以及将醇气体的分压设定为第一分压，将处理室排气的第二时段和醇气体的分压设定为低于第一分压的第二分压。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012101197A Exhaust gas treatment device, method, and semiconductor manufacturing system 审中-公开
标题翻译：排气处理装置，方法和半导体制造系统
公开(公告)号：JP2012101197A
公开(公告)日：2012-05-31
申请号：JP2010253109
申请日：2010-11-11
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI , INUKAI MINAKO , TOMITA HIROSHI
IPC分类号： B01D53/44 , B01D53/34 , B01D53/77 , H01L21/304
CPC分类号： B01D53/72 , B01D2252/103 , B01D2257/7022 , B01D2257/7027 , B01D2257/704 , B01D2257/708 , B01D2258/0216
摘要： PROBLEM TO BE SOLVED: To suppress generation of VOC gas by removing a water-insoluble organic solvent in exhaust gas.SOLUTION: An exhaust gas treatment device 1 comprises a scrubber unit 10 having a sprayer 12 spraying water into a vessel 11 and inside the vessel 11; a first pipe 21 wherein a first gas G1 discharged from an external apparatus and containing a water-insoluble organic solvent is supplied to the vessel 11, and a second pipe 22 wherein a second gas G2 containing a water-soluble organic solvent is supplied to the vessel 11 through the first pipe 21 or directly. The mixed gas G3 of the first gas G1 and the second gas G2, wherein the water-soluble organic solvent and the water-insoluble organic solvent are adsorbed and removed by the water sprayed from the sprayer 12 in the vessel 11 is discharged from the vessel 11 through a third pipe 23.
摘要翻译：要解决的问题：通过除去废气中的水不溶性有机溶剂来抑制VOC气体的产生。废气处理装置1包括具有喷射器12的洗涤器单元10，喷雾器12将水喷射到容器11中并在容器11内部; 将从外部装置排出并含有不溶于水的有机溶剂的第一气体G1供给容器11的第一管21，向第二管21供给含有水溶性有机溶剂的第二气体G2，容器11通过第一管21或直接。第一气体G1和第二气体G2的混合气体G3，其中水溶性有机溶剂和水不溶性有机溶剂被从容器11中的喷雾器12喷射的水吸附除去，从容器 11，通过第三条管道23.版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011249454A Supercritical drying method 审中-公开
标题翻译：超临界干燥方法
公开(公告)号：JP2011249454A
公开(公告)日：2011-12-08
申请号：JP2010119317
申请日：2010-05-25
申请人： Toshiba Corp , 株式会社東芝
发明人： HAYASHI HIDEKAZU , TOMITA HIROSHI , OGUCHI HISASHI , SATO YOHEI , KITAJIMA YUKIKO
IPC分类号： H01L21/304 , H01L21/027 , H01L21/308
CPC分类号： F26B3/04 , H01L21/67034
摘要： PROBLEM TO BE SOLVED: To provide a supercritical drying method to reduce particles generated on a wafer.SOLUTION: The supercritical drying method includes the steps of: introducing a semiconductor substrate wet with a chemical solution on its surface into a chamber 210; supplying a supercritical fluid to the chamber; putting the chemical solution into a supercritical state by adjusting the temperature and pressure in the chamber to be more than the supercritical temperature and pressure of the chemical solution respectively; and discharging the chemical solution from the chamber by reducing the pressure in the chamber and changing the chemical solution in the supercritical state into gas.
摘要翻译：要解决的问题：提供超临界干燥方法以减少在晶片上产生的颗粒。解决方案：超临界干燥方法包括以下步骤：将其表面上的化学溶液湿润的半导体衬底引入室210中; 向腔室供应超临界流体; 通过将室内的温度和压力分别调整为超过化学溶液的超临界温度和压力，将化学溶液置于超临界状态; 并通过降低室内的压力并将超临界状态的化学溶液变成气体，从室中排出化学溶液。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011124410A Apparatus and method for processing surface of semiconductor substrate 有权
标题翻译：用于处理半导体衬底表面的装置和方法
公开(公告)号：JP2011124410A
公开(公告)日：2011-06-23
申请号：JP2009281346
申请日：2009-12-11
申请人： Toshiba Corp , 株式会社東芝
发明人： OGAWA YOSHIHIRO , KOIDE TATSUHIKO , KIMURA SHINSUKE , TOMITA HIROSHI , OGUCHI HISASHI
IPC分类号： H01L21/304
CPC分类号： H01L21/0206 , H01L21/02043 , H01L21/02211 , H01L21/31116 , H01L21/32135 , H01L21/67028
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for processing a surface of a semiconductor substrate capable of cleaning and drying the substrate as preventing occurrences of a pattern collapse and watermarks. SOLUTION: A method for processing the surface of a semiconductor substrate includes: approximately horizontally holding to rotate a semiconductor substrate W on which a plurality of convex shape patterns are formed on a substrate hold-rotating part 100; cleaning the surface of the semiconductor substrate W with the use of chemical solution; forming a water repellent protective film on the surface of the cleaned convex shape pattern with the use of a water repellent agent; giving the semiconductor substrate W a rinse with the use of acidic water or diluted alcohol after forming the water repellent protective film; and removing the water repellent protective film with leaving the convex shape pattern after drying the rinsed semiconductor substrate W. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于处理能够清洁和干燥衬底的半导体衬底的表面的装置和方法，以防止出现图案折叠和水印。解决方案：一种用于处理半导体衬底的表面的方法包括：大致水平保持以在衬底保持转动部分100上旋转其上形成有多个凸形图案的半导体衬底W; 用化学溶液清洗半导体衬底W的表面; 通过使用防水剂在清洁的凸形图案的表面上形成防水保护膜; 在形成防水保护膜之后，使用酸性水或稀释的醇使半导体衬底W进行漂洗; 并在干燥漂洗后的半导体衬底W之后，留下凸形图案去除防水保护膜。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010135368A Template cleaning method, cleaning system, and cleaning apparatus 有权
标题翻译：模式清洁方法，清洁系统和清洁装置
公开(公告)号：JP2010135368A
公开(公告)日：2010-06-17
申请号：JP2008307215
申请日：2008-12-02
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , OGUCHI HISASHI , INUKAI MINAKO
IPC分类号： H01L21/027 , H01L21/304
CPC分类号： B08B3/08 , B08B13/00 , H01L21/67051 , H01L21/67748 , H01L21/68707 , H01L21/68728
摘要： PROBLEM TO BE SOLVED: To provide a template cleaning method, a cleaning system, and a cleaning apparatus capable of cleaning a template for nanoimprint in a state wherein foreign matter of microsize is removed.
SOLUTION: The template cleaning apparatus (101) cleans the template (301) for nanoimprint, and includes a chamber (111) in which a wafer (201) and the template are placed, a stage (131) which is provided in the chamber and where the wafer and template can be placed, and a conveyance arm (123) capable of conveying the wafer and template into the chamber.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种模板清洁方法，清洁系统和清洁装置，其能够在去除微尺寸异物的状态下清洁用于纳米压印的模板。解决方案：模板清洁装置（101）清洁用于纳米压印的模板（301），并且包括其中放置晶片（201）和模板的腔室（111），设置在所述腔室和所述晶片和模板可以放置的位置以及能够将所述晶片和模板输送到所述腔室中的输送臂（123）。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2008305851A Semiconductor manufacturing apparatus and method 有权
标题翻译：半导体制造设备和方法
公开(公告)号：JP2008305851A
公开(公告)日：2008-12-18
申请号：JP2007149465
申请日：2007-06-05
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI
IPC分类号： H01L21/306
CPC分类号： H01L21/67086 , H01L21/67253 , H01L22/12 , H01L22/20 , Y10T29/41
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and method capable of easily adjusting an H 3 PO 4 liquid which can provide a desired etching rate and a desired selection ratio to an oxide film. SOLUTION: The H 3 PO 4 processing apparatus 100 includes a processing tank 10 in which an H 3 PO 4 liquid for immersing a wafer is stored, a new liquid supply mechanism 15 for supplying a new H 3 PO 4 liquid to the processing tank 10, liquid discharging mechanisms 16 and 17 for discharging the H 3 PO 4 liquid from the processing tank 10, a data base 31 for storing a selection ratio to an oxide film and an etching rate to an accumulated SiN etching amount acquired previously, and a control unit 20 having a processing determination unit 34 for determining whether a desired etching rate and a desired selection ratio to the oxide film can be obtained when a wafer for the subsequent processing is processed with the present H 3 PO 4 liquid and a supply/discharge amount calculating unit 35 for calculating an H 3 PO 4 liquid discharge amount and a new H 3 PO 4 liquid supply amount when the determination of the processing determination unit 34 is "no" and an Si density in the present H 3 PO 4 liquid is required to be reduced. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够容易地调节可以提供期望的蚀刻速率和期望的蚀刻速率的H 3 SB 3 PO 4 SBS液体的半导体制造装置和方法，与氧化膜的选择比。解决方案：处理装置100包括处理槽10，其中H 3 SB <4> 储存用于浸渍晶片的液体/ SB>液体的新的液体供给机构15，用于向处理槽10供给新的H 3 SB 3 PO 3 SBS液体;液体排出机构16 和17，用于从处理槽10排出H 3 SB 3 PO 3 SBS液体;数据库31，用于存储与氧化膜的选择比和蚀刻速率到累积的并且具有处理确定单元34的控制单元20，该处理确定单元34用于当用于后续处理的晶片被处理时，用于确定是否期望的蚀刻速率和期望的氧化膜选择比， SB> 3 4 液体，以及用于计算H 3 SB 3 PO 4 SB SB 4液体排出量的供给/排出量计算单元35 和新的H 3 PO 4 液体供应量加工确定单元34的配位是“否”，并且需要减少本发明的H 3 SB 3 PO 4 SB 3液体中的Si密度。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2005260179A Filter and semiconductor processing apparatus 有权
标题翻译：过滤器和半导体加工设备
公开(公告)号：JP2005260179A
公开(公告)日：2005-09-22
申请号：JP2004073204
申请日：2004-03-15
申请人： Toshiba Corp , 株式会社東芝
发明人： IIMORI HIROYASU , OGUCHI HISASHI , TOMITA HIROSHI , OGAWA YOSHIHIRO
IPC分类号： H01L21/306 , C23F1/00 , H01L21/00 , H01L21/311
CPC分类号： H01L21/67086 , H01L21/30604 , H01L21/31111
摘要： PROBLEM TO BE SOLVED: To remove silica dust in H
3 PO
4 solution at low cost and with high efficiency.
SOLUTION: H
2 O, for keeping fixed the concentration of the H
3 PO
4 solution, is added immediately in front of a filter film, and the temperature distribution of the H
3 PO
4 solution is made nonuniform.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2013201272A Embedding method of film and semiconductor device 有权
标题翻译：薄膜和半导体器件的嵌入方法
公开(公告)号：JP2013201272A
公开(公告)日：2013-10-03
申请号：JP2012068439
申请日：2012-03-23
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIMIZU YASUTO , OGUCHI HISASHI , TOMITA HIROSHI
IPC分类号： H01L21/8247 , H01L21/316 , H01L21/336 , H01L21/76 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/02304 , H01L21/7682 , H01L21/76834 , H01L21/76837 , H01L23/24 , H01L27/11568 , H01L29/66833 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an embedding method of a film and a semiconductor device capable of miniaturization.SOLUTION: The embedding method of a film includes a step for forming a recess which reaches a first layer by penetrating a second layer provided thereon and containing a material different from that contained in the first layer, a step for forming a monomolecular film containing an organic molecule so as to cover the side face of the recess, by bringing a material containing the organic molecule into contact with the first layer and second layer on the side face of the recess, and a step for forming a film, embedding of which in the recess is controlled by the monomolecular film, on the monomolecular film.
摘要翻译：要解决的问题：提供能够小型化的膜和半导体器件的嵌入方法。解决方案：膜的包埋方法包括通过穿透其上设置的第二层形成到达第一层的凹部的步骤，与第一层不同的材料，通过使含有有机分子的材料与第一层和第二层接触而形成含有有机分子的单分子膜以覆盖凹部的侧面的步骤在该单分子膜上，在该凹部的侧面和形成膜的步骤中，通过单分子膜将其嵌入到凹部内而形成。

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