专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013219198A Thin film manufacturing method 审中-公开
标题翻译：薄膜制造方法
公开(公告)号：JP2013219198A
公开(公告)日：2013-10-24
申请号：JP2012088683
申请日：2012-04-09
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： TAKAHASHI EIJI , FUJIWARA MASAYOSHI , ANDO YASUNORI
IPC分类号： H01L21/318 , C23C16/42 , H01L21/205 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a thin film manufacturing method which can manufacture a high-quality insulation film or a high-quality semiconductor film.SOLUTION: A thin film manufacturing method comprises: a process S1 of depositing an insulation thin film or a semiconductor thin film by inductively coupled plasma by using a material gas including either of fluorine atoms or hydrogen atoms, and silicon atoms, and a reaction gas including composition atoms which compose the insulation thin film or the semiconductor thin film by binding with the silicon atoms; a process S2 of introducing the composition atoms into the insulation thin film or the semiconductor thin film by the inductively coupled plasma by using the reaction gas; and a process S3 of repeatedly performing the process S1 and the process S2 by defining the process S1 and the process S2 as one cycle.
摘要翻译：要解决的问题：提供一种能够制造高质量绝缘膜或高质量半导体膜的薄膜制造方法。解决方案：一种薄膜制造方法，包括：沉积绝缘薄膜或半导体的工艺S1 通过使用包含氟原子或氢原子的材料气体的电感耦合等离子体和硅原子的薄膜，以及包含通过与硅原子结合而构成绝缘薄膜或半导体薄膜的组成原子的反应气体; 通过使用反应气体通过电感耦合等离子体将组成原子引入绝缘薄膜或半导体薄膜的工艺S2; 以及通过将处理S1和处理S2定义为一个周期来重复执行处理S1和处理S2的处理S3。

2. 发明专利

JP2013134836A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2013134836A
公开(公告)日：2013-07-08
申请号：JP2011283127
申请日：2011-12-26
申请人： Nissin Electric Co Ltd , 日新電機株式会社 , Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： ANDO YASUNORI , IRISAWA KAZUHIKO , YONEDA HITOSHI , MASHITA TORU , UCHIDA RYOHEI , CHIBA MASAKI
IPC分类号： H05H1/46 , C23C16/507 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To suppress plasma potential by reducing the effective inductance of an antenna in an induction coupling plasma processing apparatus, and to control the plasma density distribution by means of the antenna in the longitudinal direction thereof.SOLUTION: In the plasma processing apparatus, an antenna 30 having a straight planar shape comprises reciprocating conductors 31, 32 which are arranged to be close each other in a vertical direction Z. High frequency currents Iflow in the reciprocating conductors 31, 32 in a reverse direction with each other. An interval D in the vertical direction between the reciprocating conductors 31, 32 is varied in the longitudinal direction X of the antenna 30. More preferably than the connection shown on the drawing, a high frequency power supply 42 is connected with one end portion of the upper conductor 32 via a matching circuit 44, and one end portion of the lower conductor 31 is grounded.
摘要翻译：要解决的问题：通过降低感应耦合等离子体处理装置中的天线的有效电感来抑制等离子体电位，并且通过天线在其纵向上控制等离子体密度分布。解决方案：在等离子体处理装置具有直的平面形状的天线30包括布置成在垂直方向Z彼此靠近的往复导体31,32。在往复导体31,32中的高频电流彼此相反。往复导体31,32之间的垂直方向上的间隔D在天线30的纵向方向X上变化。更优选地，与图中所示的连接相比，高频电源42与上导体32经由匹配电路44，下导体31的一个端部接地。

3. 发明专利

JP2012226888A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2012226888A
公开(公告)日：2012-11-15
申请号：JP2011091733
申请日：2011-04-18
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： ANDO YASUNORI , MATSUBARA KATSUO , TSUNODA TAKANORI , TSUJI KURAYUKI
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma processing apparatus capable of enhancing uniformity of plasma density distribution in a longitudinal direction of an antenna.SOLUTION: A plasma processing apparatus has an antenna 30 in which a high-frequency current Iis flowed from one end part to the other end part in an X direction. Unevenness in a vertical direction is provided to a lower surface 33 of the antenna 30, and more convex parts 35 are arranged in the vicinity of both end parts rather than the center part in the X direction in the antenna 30. A comb-like shield conductor 60 for shielding an electric field between the antenna 30 and a plasma 50 is provided downward the antenna 30. The shield conductor 60 has in the X direction a plurality of linear conductors 62 parallel to a Y direction, and an electrically-grounded connection conductor electrically connecting one end parts in the Y direction of the plurality of linear conductors 62 in parallel.
摘要翻译：解决的问题：提供能够提高天线纵向等离子体密度分布均匀性的电感耦合等离子体处理装置。解决方案：等离子体处理装置具有天线30，其中高频电流I R 从X方向的一个端部流向另一端部。在天线30的下表面33设置垂直方向的不均匀性，在天线30的X方向的两端部而不是中心部附近配置多个凸部35。梳状的屏蔽天线30向下设置用于屏蔽天线30和等离子体50之间的电场的导体60.屏蔽导体60在X方向上具有与Y方向平行的多个线状导体62和电接地连接导体将多个线状导体62的Y方向上的一个端部部件并联电连接。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012209321A Multi-chamber type vacuum processing apparatus 审中-公开
标题翻译：多室型真空加工设备
公开(公告)号：JP2012209321A
公开(公告)日：2012-10-25
申请号：JP2011072115
申请日：2011-03-29
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： IRISAWA KAZUHIKO , ANDO YASUNORI
IPC分类号： H01L21/31 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/3065 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a multi-chamber type vacuum processing apparatus which has a vacuum evacuation system simplified, and is low-cost.SOLUTION: The multi-chamber type vacuum processing apparatus includes a load lock chamber 3 in and out of which a workpiece 1 is carried, a process chamber 4 in which predetermined processing is carried out, and a separation chamber 5 which adjoins the process chamber 4 and is for carrying the workpiece 1 between the load lock chamber 3 and process chamber 4. The process chamber 4 includes only a rough evacuation device as a vacuum evacuation device, and the separation chamber 5 includes a high vacuum evacuation device and a rough evacuation device.
摘要翻译：解决的问题：提供一种简化了真空排气系统并且成本低廉的多室型真空处理装置。解决方案：多室型真空处理装置包括：搬运工件1及其外部的负载锁定室3;进行预定处理的处理室4;和分隔室5，处理室4，用于将工件1承载在负载锁定室3和处理室4之间。处理室4仅包括作为真空排气装置的粗抽排装置，分离室5包括高真空排气装置和粗抽排装置。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012133899A Plasma processing device 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：JP2012133899A
公开(公告)日：2012-07-12
申请号：JP2010282633
申请日：2010-12-20
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： ANDO YASUNORI
IPC分类号： H05H1/46 , C23C14/34 , C23C16/507 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To suppress the occurrence of a large potential difference by limiting the increase in impedance, and consequently enable the generation of plasma with good uniformity even in a plane conductor increased in size.SOLUTION: The plasma processing device includes a plane conductor 30 having a holder-side surface 32 located in a vacuum chamber 4 and provided to face the substrate holding surface of a holder 10. The plane conductor 30 has at least one groove 40 along the direction of flow of RF current in the holder-side surface 32. The at least one groove 40 extends in a direction crossing the direction of flow of RF current, and has a depth larger than the skin thickness of RF current flowing in the plane conductor 30. The at least one groove 40 divides the holder-side surface 32 into more than one region. In each groove 40 of the plane conductor 30, a capacitor 42 is provided. The more than one region of the plane conductor 30, and the capacitor 42 are electrically connected in series with each other.
摘要翻译：要解决的问题：通过限制阻抗的增加来抑制大的电位差的发生，因此即使在尺寸增加的平面导体中也能够产生均匀性均匀的等离子体。解决方案：等离子体处理装置包括平面导体30，平面导体30具有位于真空室4中的保持器侧表面32并且设置成面对保持器10的基板保持表面。平面导体30具有至少一个凹槽40 沿着保持器侧表面32中的RF电流的流动方向。所述至少一个凹槽40沿与RF电流的流动方向交叉的方向延伸，并且具有大于流过所述RF电流的RF电流的表皮厚度的深度至少一个凹槽40将保持器侧表面32分成不止一个区域。在平面导体30的每个凹槽40中，设置有电容器42。平面导体30的不止一个区域和电容器42彼此串联电连接。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2013131295A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2013131295A
公开(公告)日：2013-07-04
申请号：JP2011277788
申请日：2011-12-20
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： TSUNODA TAKANORI , MATSUBARA KATSUO , ANDO YASUNORI , TSUJI KURAYUKI
IPC分类号： H05H1/46 , C23C16/509 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that is an inductively-coupled device, that can reduce an effective inductance of an antenna to suppress a plasma potential at a low level, and further, that can control plasma density distribution in a longitudinal direction of the antenna by the antenna.SOLUTION: In a plasma processing apparatus, an antenna 30 having a straight planar shape is configured by plate-like reciprocating conductors 31 and 32 which are arranged to be close to each other in a vertical direction Z that is a direction of expanding and contracting a perpendicular 3 erected on a surface of a substrate 2, and in each of which a high-frequency current Iflows in a direction opposite to each other. An interval D in the vertical direction Z between the reciprocating conductors 31 and 32 is changed in a longitudinal direction X of the antenna 30.
摘要翻译：要解决的问题：为了提供作为电感耦合器件的等离子体处理装置，其可以降低天线的有效电感，以将等离子体电位抑制在低水平，并且还可以控制纵向的等离子体密度分布解决方案：在等离子体处理装置中，具有直的平面形状的天线30由平板状的往复导体31和32构成，板状往复导体31和32沿垂直方向Z彼此靠近配置，是在基板2的表面上竖立的垂直线3的伸缩方向，并且在彼此相反的方向上分别形成高频电流Iflows。往复导体31,32之间的上下方向Z的间隔D在天线30的长度方向X上变化。

7. 发明专利

JP2013020871A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2013020871A
公开(公告)日：2013-01-31
申请号：JP2011154604
申请日：2011-07-13
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： MATSUBARA KATSUO , ANDO YASUNORI
IPC分类号： H05H1/46 , C23C16/505 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma processing apparatus in which the plasma potential can be limited by decreasing the effective inductance of an antenna, and the density distribution can be controlled by the antenna in the longitudinal direction thereof.SOLUTION: An antenna 30 having a straight planar shape is constituted of reciprocal conductors 31, 32 disposed closely to each other in the vertical direction Z, i.e., the direction along a normal 3 to the surface of the substrate 2, and through which a high frequency current Iflows in the direction opposite from each other. The interval D between the reciprocal conductors 31, 32 in the vertical direction Z is varied in the longitudinal direction of the antenna 30. Furthermore, a plurality of magnetic bodies 70 movable in the longitudinal direction X of the antenna 30 are provided in the vicinity of the upper conductor 32.
摘要翻译：要解决的问题：提供一种电感耦合等离子体处理装置，其中可以通过降低天线的有效电感来限制等离子体电位，并且可以通过天线在其纵向方向上控制密度分布。解决方案：具有直的平面形状的天线30由在垂直方向Z上彼此紧密配置的互导导体31,32构成，即沿着法线3到基板2的表面的方向，并且通过其高频电流I R 沿彼此相反的方向流动。互相导体31,32在垂直方向Z上的间隔D在天线30的长度方向上变化。此外，在天线30的纵向方向X上可移动的多个磁体70设置在上层导体32.版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2014145121A Vacuum treatment apparatus 审中-公开
标题翻译：真空处理设备
公开(公告)号：JP2014145121A
公开(公告)日：2014-08-14
申请号：JP2013015536
申请日：2013-01-30
申请人： Nissin Electric Co Ltd , 日新電機株式会社 , Japan Steel Works Ltd:The , 株式会社日本製鋼所
发明人： IRISAWA KAZUHIKO , ANDO YASUNORI , MASHITA TORU
IPC分类号： C23C14/56
摘要： PROBLEM TO BE SOLVED: To avoid falling of a foreign matter in a gate valve and prevent vacuum leakage in a film formation chamber due to deterioration of sealability.SOLUTION: A vacuum treatment apparatus comprises a film formation chamber 12 for forming a thin film on a glass substrate 11 in a vacuum state, a load-side preliminary chamber 13 and an unload-side preliminary chamber 14 which are arranged adjacent to the film formation chamber 12 and carry the glass substrate 11 in and out between the film formation chamber 12 and the preliminary chambers 13 and 14 and gate valves 15 and 16 which are arranged between the film formation chamber 12 and the preliminary chambers 13 and 14 to communicate the film formation chamber 12 with the preliminary chambers 13 and 14 in a vacuum state and block between the film formation chamber 12 and the preliminary chambers 13 and 14 in an atmosphere opened state. The vacuum treatment apparatus is also provided with shutters 27 and 28 which can move in and out of the gate valves 15 and 16 by moving along the carrying direction of the glass substrate in the gate valves 15 and 16 and intervene between the glass substrate 11 and the gate vales 15 and 16 during carrying the substrate 11 in and out.
摘要翻译：要解决的问题：为了避免异味在闸阀中的下降，并且由于密封性的劣化而防止膜形成室中的真空泄漏。解决方案：真空处理装置包括：成膜室12，用于在在真空状态下的玻璃基板11，负载侧预备室13和卸载侧预备室14，其与成膜室12相邻配置，并将玻璃基板11进出成膜室12和预置室13和14以及闸阀15和16，其布置在成膜室12和预备室13和14之间，以使成膜室12与预备室13和14以真空状态连通，并且在膜形成室12和预备室13和14处于气氛打开状态。真空处理装置还设置有快门27和28，其通过沿着闸阀15和16中的玻璃基板的运送方向移动而进入和离开闸阀15和16，并且介入玻璃基板11和在将衬底11进入和移出时，栅极15和16。

9. 发明专利

JP2013206652A Antenna device, and plasma processing apparatus and sputtering apparatus having the same 审中-公开
标题翻译：天线装置和等离子体处理装置和具有其的喷射装置
公开(公告)号：JP2013206652A
公开(公告)日：2013-10-07
申请号：JP2012072870
申请日：2012-03-28
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： ANDO YASUNORI
IPC分类号： H05H1/46 , C23C14/40 , C23C16/509 , H01L21/203 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an antenna device capable of generating an inductively-coupled plasma and suppressing raise in a plasma potential.SOLUTION: An antenna device 20 comprises: an antenna 30 located in a vacuum container 2; a high-frequency power supply 40 applying a high-frequency current Ito the antenna 30; and a matching circuit 42. The antenna 30 has a coaxial structure having an internal conductor 32, an external conductor 34 covering the outside of the internal conductor 32 at least over the total length located in the vacuum container 2, and a dielectric body 36 electrically insulating between both the conductors. The antenna 30 also has a water-cooling structure for cooling the antenna 30 by circulating cooling water in the internal conductor 32. The high-frequency power supply 40 is connected to one end part of the internal conductor 32 via the matching circuit 42. The other end part of the internal conductor 32 is grounded. The external conductor 34 consists of a non-magnetic body, and is grounded at one end part.
摘要翻译：要解决的问题：提供能够产生电感耦合等离子体并抑制等离子体电位升高的天线装置。解决方案：天线装置20包括：位于真空容器2中的天线30; 将高频电流I施加到天线30的高频电源40; 和匹配电路42.天线30具有同轴结构，其具有内部导体32，外部导体34至少覆盖位于真空容器2内的总长度的内部导体32的外部，电介质体36电两个导体之间绝缘。天线30还具有用于通过使内部导体32中的冷却水循环来冷却天线30的水冷结构。高频电源40经由匹配电路42连接到内部导体32的一个端部。内部导体32的另一端部接地。外部导体34由非磁性体构成，在一端部接地。

10. 发明专利

JP2015018889A 薄膜トランジスタの作製方法有权
标题翻译：薄膜晶体管制造方法
公开(公告)号：JP2015018889A
公开(公告)日：2015-01-29
申请号：JP2013144166
申请日：2013-07-10
申请人：日新電機株式会社 , Nissin Electric Co Ltd
发明人： ANDO YASUNORI
IPC分类号： H01L21/336 , H01L21/318 , H01L29/786
CPC分类号： H01L21/428 , H01L29/66969 , H01L29/7869
摘要：【課題】自己整合プロセスにおけるエキシマレーザー光照射時に、薄膜トランジスタを構成する膜の過大な温度上昇を防止する。【解決手段】エキシマレーザー光16を透過させる基板2上に拡散防止膜4を形成し、その上にゲート電極6およびゲート絶縁膜8を形成し、その上に酸化物半導体層10を形成している構造体14aに、基板2側からエキシマレーザー光16を照射して、ゲート電極6をマスクとして用いて、酸化物半導体層10の、ゲート電極6に対応する領域の両外側の領域にエキシマレーザー光16を照射して低抵抗化を行って、当該両外側の領域の内の一方をソース領域18、他方をドレイン領域19とする。上記拡散防止膜4は、シリコン窒化膜中にフッ素を含むフッ素化シリコン窒化膜(SiN:F)によって構成している。【選択図】図2
摘要翻译：要解决的问题：为了防止在自对准过程中准分子激光束照射时构成薄膜晶体管的膜的过度升温。解决方案：薄膜晶体管制造方法包括：从基板2照射准分子激光束16 在扩散防止膜4上形成有在扩散防止膜4上形成有扩散防止膜4的结构14a，该扩散防止膜4透射准分子激光束16，栅电极6和栅极绝缘膜8，氧化物半导体在栅电极6和栅绝缘膜8上形成层10; 在对应于栅极电极外部6的区域的氧化物半导体层10的两个外部区域上照射准分子激光束16以实现低电阻以使外部区域之一成为源极区域18，而另一个是漏极区域19。防扩散膜4由在氮化硅膜中含有氟的氟化氮化硅膜（SiN：F）构成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式