专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2015033237A 蓄電装置、充電方法及び放電方法有权
标题翻译：电力存储装置，充电方法和放电方法
公开(公告)号：JP2015033237A
公开(公告)日：2015-02-16
申请号：JP2013161535
申请日：2013-08-02
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd
发明人： UDONO NAOTADA , HIROTSU KENICHI , NAKAHATA HIDEAKI
IPC分类号： H02J7/02
摘要：【課題】エネルギーの損失を抑制し、充電効率及び放電能力を向上させ、複数の電池の電圧の、迅速な均等化が可能な蓄電装置、充電方法及び放電方法を提供する。【解決手段】蓄電装置100は、複数の単位電池B1〜B4のうち、一の単位電池を第1キャパシタC1〜C3に並列接続する回路、及び、当該第1キャパシタC1〜C3を他の単位電池に並列接続する回路を、選択的に構成可能な第1スイッチ回路部3と、複数の電池グループのうち、一の電池グループを第2キャパシタCgに並列接続する回路、及び、当該第2キャパシタCgを他の電池グループに並列接続する回路を、選択的に構成可能な第2スイッチ回路部4と、第1スイッチ回路部3及び第2スイッチ回路部4について、構成する回路を逐次切り替えるようにそれぞれ動作させる制御部5と、を備えている。【選択図】図1
摘要翻译：要解决的问题：提供一种能够通过在抑制能量损失的同时提高充电效率和放电能力来迅速地均衡多个电池的电压的蓄电装置，充电方法和放电方法。解决方案：蓄电装置100 包括：第一开关电路部分3，其能够选择性地形成用于将多个单元电池B1-B4中的一个并联连接到第一电容器C1-C3的电路和用于将第一电容器C1-C3连接到其它单元电池的电路在平行下; 第二开关电路部分4，其能够选择性地形成用于将多个电池组中的一个并联连接到第二电容器Cg的电路和用于将第二电容器Cg并联连接到其它电池组的电路; 以及用于操作第一开关电路部分3和第二开关电路部分4以便连续地切换要形成的电路的控制部分5。

2. 发明专利

JP2014226027A 集光型太陽光発電システム、追尾ずれの検出方法及び追尾ずれの補正方法、制御装置、並びに、追尾ずれの検出プログラム及び追尾ずれの補正プログラム审中-公开
标题翻译：浓缩光伏发电系统，检测跟踪偏差的方法和纠正跟踪偏差的方法，用于检测跟踪偏差的控制装置和程序以及用于校正跟踪偏差的程序
公开(公告)号：JP2014226027A
公开(公告)日：2014-12-04
申请号：JP2014073286
申请日：2014-03-31
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd
发明人： IWASAKI TAKASHI , HIROTSU KENICHI , NAKAHATA HIDEAKI , YAMAMOTO SEIJI
IPC分类号： H02S10/00 , F24S50/20 , H02S40/22
CPC分类号： Y02E10/47 , Y02E10/52
摘要：【課題】集光型太陽光発電における太陽の追尾のずれを発見する技術を提供する。【解決手段】集光型太陽光発電パネル1と、この集光型太陽光発電パネル1に、太陽に対する追尾動作をさせる駆動装置200と、集光型太陽光発電パネル1における発電電力の経時変化に繰り返し生じる変動パターンを検出し、検出した変動パターンを、方位角のずれに特有の形態及び仰角のずれに特有の形態と比較することにより、追尾のずれの有無を検出する制御装置400とを備える。【選択図】図13
摘要翻译：要解决的问题：提供一种在集中光伏发电中寻找跟踪太阳的偏差的技术。解决方案：聚光光伏发电系统包括：集中光伏发电板1; 用于使集中光伏发电系统跟踪太阳运动的驱动装置200; 以及控制装置400，用于通过检测由集中光伏发电板1产生的电力随时间的变化重复产生的波动图案，并且通过将检测到的波动模式与异常形式的偏差进行比较来检测是否存在跟踪偏差方位角和具有偏角的特殊形式。

3. 发明专利

JP2014141413A Method of manufacturing nitride substrate 有权
标题翻译：制造氮化物基板的方法
公开(公告)号：JP2014141413A
公开(公告)日：2014-08-07
申请号：JP2014101578
申请日：2014-05-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ARAKAWA SATOSHI , MIYANAGA TOMOMASA , SAKURADA TAKASHI , YAMAMOTO YOSHIYUKI , NAKAHATA HIDEAKI
IPC分类号： C30B33/00 , C30B29/38
CPC分类号： H01L21/02021 , C30B25/00 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02013 , H01L21/02389
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride substrate in which the nitride substrate having an off angle of a surface controlled is manufactured in an improved yield, and the nitride substrate.SOLUTION: A method of manufacturing a nitride substrate (10) includes the following processes. A nitride crystal is grown first. Then the nitride substrate (10) having a surface (11) is cut out of the nitride crystal. In the cutting process, the nitride substrate (10) is cut out so that the off angle between an axis orthogonal to the surface (11) and an (m) axis or (a) axis is larger than 0. When the nitride crystal is grown in a (c)-axial direction, the cutting process includes cutting the nitride substrate (10) out of the nitride crystal along a plane which passes a top surface and a reverse surface of the nitride crystal and does not passes a segment connecting centers of radii of curvature of the top surface and reverse surface of the nitride crystal.
摘要翻译：要解决的问题：提供一种制造氮化物衬底的方法，其中具有以更高产率制造表面受控的氮化物衬底的氮化物衬底和氮化物衬底。解决方案：一种制造氮化物衬底（10 ）包括以下过程。首先生长氮化物晶体。然后从氮化物晶体中切出具有表面（11）的氮化物衬底（10）。在切割过程中，切割氮化物衬底（10），使得与表面（11）垂直的轴与（m）轴或（a）轴之间的偏角大于0.当氮化物晶体为沿（c）轴方向生长，切割过程包括沿着通过氮化物晶体的顶表面和反面的平面将氮化物衬底（10）切割出氮化物晶体，并且不通过段连接中心的氮化物晶体的顶表面和反面的曲率半径。

4. 发明专利

JP2013161867A Concentrating solar power generation panel, and concentrating solar power generation device 有权
标题翻译：集中太阳能发电机组和集中太阳能发电装置
公开(公告)号：JP2013161867A
公开(公告)日：2013-08-19
申请号：JP2012020862
申请日：2012-02-02
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： AKASAKA JUNICHI , IWASAKI TAKASHI , HIROTSU KENICHI , NAKAHATA HIDEAKI , TORITANI KAZUMASA , ABIKO YOSHIYA
IPC分类号： H01L31/042
CPC分类号： Y02E10/52
摘要： PROBLEM TO BE SOLVED: To reduce the thickness of a casing 10 while effectively preventing water or the like from infiltrating into the casing 10.SOLUTION: In a concentrating solar power generation panel P, a condensing plate 24 is provided in an opening of a recessed casing 10 formed by surrounding the entire circumference of a bottom plate 11 with a side plate 12, and a power generation element 22 for generating power by condensation from each Fresnel lens 24a of the condensing plate is provided in the casing. The casing is integrally formed by pressing a metal plate having high heat dissipation, beads 13 and 18 are horizontally and vertically provided on the inner surface of the bottom plate, flatness of the bottom plate is secured by the beads, and a condensing lens and the power generation element are positioned within a fixed range. The Fresnel lens is a square with each side of less than 6 cm, and the depth of the casing is 10 cm or less. Since the focal distance becomes short if the size of the lens becomes small, the distance between the condensing lens and the power generation element can be shorten, and the thickness (depth) of the casing for housing them can be thinned. Each power generation element is mounted on a flexible printed circuit board provided on the bottom of the casing.
摘要翻译：要解决的问题：减少壳体10的厚度，同时有效防止水等渗入壳体10.解决方案：在聚光太阳能发电板P中，冷凝板24设置在凹陷壳体10通过用侧板12围绕底板11的整个圆周而形成，并且在壳体中设置有用于通过冷凝从冷凝板的菲涅耳透镜24a发生动力的发电元件22。壳体通过按压具有高散热性的金属板而整体形成，珠13和18水平和垂直地设置在底板的内表面上，底板的平坦度由珠固定，聚光透镜和发电元件位于固定范围内。菲涅尔透镜是每边均小于6厘米的方形，外壳的深度为10厘米或更小。由于如果透镜的尺寸变小，则焦距变短，所以可以缩小聚光透镜与发光元件之间的距离，能够使用于容纳它们的外壳的厚度（深度）变薄。每个发电元件安装在设置在壳体底部的柔性印刷电路板上。

5. 发明专利

JP2013145906A Semiconductor element, optical sensor device, and method of manufacturing semiconductor element 有权
标题翻译：半导体元件，光传感器件及制造半导体元件的方法
公开(公告)号：JP2013145906A
公开(公告)日：2013-07-25
申请号：JP2013044317
申请日：2013-03-06
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUJII KEI , AKITA KATSUSHI , ISHIZUKA TAKASHI , NAKAHATA HIDEAKI , INOGUCHI YASUHIRO , INADA HIROSHI , NAGAI YOICHI
IPC分类号： H01L31/10 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element having a low dark current and whose light-receiving sensitivity is enlarged to a long-wavelength side of near infrared, and to provide an optical sensor device and a method of manufacturing the semiconductor element.SOLUTION: The semiconductor element 50 has: a type-2 (GaAsSb/InGaAs) MQW light-receiving layer 3 located on an InP substrate 1; and an InP contact layer 5 located on the MQW. In the MQW, with respect to GaAsSb, a composition x(%) is 44% or more, a film thickness z (nm) is 3 nm or more, and z(nm)≥-0.4x(atm.%)+24.6 is satisfied.
摘要翻译：要解决的问题：提供一种具有低暗电流并且其光接收灵敏度被扩大到近红外线的长波长侧的半导体元件，并且提供一种光学传感器装置和半导体元件的制造方法。：半导体元件50具有位于InP衬底1上的2型（GaAsSb / InGaAs）MQW光接收层3; 和位于MQW上的InP接触层5。在MQW中，相对于GaAsSb，组成x（％）为44％以上，膜厚z（nm）为3nm以上，z（nm）≥-0.4×（atm。％）+ 24.6 满意

6. 发明专利

JP2012037915A Manufacturing method for wavelength conversion element 有权
标题翻译：波长转换元件的制造方法
公开(公告)号：JP2012037915A
公开(公告)日：2012-02-23
申请号：JP2011254148
申请日：2011-11-21
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SATO KAZUNARI , MIYANAGA TOMOMASA , YAMAMOTO YOSHIYUKI , NAKAHATA HIDEAKI
IPC分类号： G02F1/377
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a wavelength conversion element capable of improving transmittance.SOLUTION: A manufacturing method 10d for a wavelength conversion element comprises, in sequence: a step of growing a first crystal 11; and a step of growing a second crystal which is an amorphous crystal 16 of which refractive index is not different from that of the first crystal 11 substantially, on a surface of the first crystal 11. Polarization reversal structure in which polarization directions of the first and second crystals 11, 16 are periodically reversed along an optical waveguide 13 is formed, and the first and second crystals 11, 16 are formed so that the polarization reversal structure satisfies pseudo phase matching condition relative to incident light.
摘要翻译：解决的问题：提供能够提高透射率的波长转换元件的制造方法。解决方案：用于波长转换元件的制造方法10d依次包括：生长第一晶体11的步骤; 以及在第一晶体11的表面上生长作为第一晶体11的折射率与第一晶体11的折射率基本相同的非晶体16的第二晶体的工序。极化反转结构，其中，形成第二晶体11,16沿着光波导13周期性地反转，并且第一和第二晶体11,16形成为使得偏振反转结构相对于入射光满足伪相位匹配条件。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012015170A Light receiving element and method for manufacturing the same 审中-公开
标题翻译：光接收元件及其制造方法
公开(公告)号：JP2012015170A
公开(公告)日：2012-01-19
申请号：JP2010147636
申请日：2010-06-29
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： AKITA KATSUSHI , ISHIZUKA TAKASHI , FUJII KEI , NAKAHATA HIDEAKI , NAGAI YOICHI , INADA HIROSHI , INOGUCHI YASUHIRO
IPC分类号： H01L31/10
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/18 , H01L31/1844 , Y02E10/544
摘要： PROBLEM TO BE SOLVED: To provide a light receiving element with which fluctuations in light receiving sensitivity is suppressed from a short wavelength side including a wavelength of 1.3 μm to a near infrared region of a long wavelength side, and to provide a method for manufacturing the light receiving element.SOLUTION: A light receiving element includes a light receiving layer of a type-II multiple-quantum well (MQW) structure comprising a repeating structure of a GaAsSb layer and an InGaAs layer on an InP substrate, and has light receiving sensitivity in an infrared region including wavelengths of 1.3 μm and 2.0 μm. In the light receiving element, a ratio of the light receiving sensitivity at the wavelength of 1.3 μm to the light receiving sensitivity at the wavelength of 2.0 μm is set to 0.5 or more and 1.6 or less.
摘要翻译：要解决的问题：提供一种从包括1.3μm波长的短波长侧到长波长侧的近红外区域抑制受光灵敏度的波动的光接收元件，并且提供一种方法用于制造光接收元件。解决方案：光接收元件包括II型多量子阱（MQW）结构的光接收层，其包括在InP衬底上的GaAsSb层和InGaAs层的重复结构，并且具有光接收灵敏度包括1.3μm和2.0μm波长的红外区域。在受光元件中，波长1.3μm下的受光灵敏度与波长2.0μm的受光灵敏度的比率设定为0.5以上且1.6以下。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011253834A Light receiving element, optical sensor device and method of manufacturing light receiving element 有权
标题翻译：光接收元件，光传感器装置及制造光接收元件的方法
公开(公告)号：JP2011253834A
公开(公告)日：2011-12-15
申请号：JP2010124497
申请日：2010-05-31
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ISHIZUKA TAKASHI , AKITA KATSUSHI , FUJII KEI , NAKAHATA HIDEAKI , INOGUCHI YASUHIRO , INADA HIROSHI , NAGAI YOICHI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a light receiving element, or the like, in which variation in photosensitivity is minimized from the short wavelength side to the near infrared region on the long wavelength side.SOLUTION: The light receiving element 50 comprises: a light receiving layer 3 of 50 pairs or more of type 2 MQWs having sensitivity in the near-infrared region; a second light receiving layer 13 located in the light receiving layer or in contact with the external surface thereof and having a band gap larger than that in type 2 transition; and a p-type region 6 located from the surface to the interior of an epitaxial laminate. A pn junction 15 is formed at the tip of the p-type region and located at a position closer to the surface of the epitaxial laminate than the second light receiving layer 13.
摘要翻译：要解决的问题：提供一种其光敏性的变化从长波长侧的短波长侧到近红外区域最小化的光接收元件等。光接收元件50包括：在近红外区域具有灵敏度的50对或更多的2对MQW的光接收层3; 第二光接收层13位于光接收层中或与其外表面接触并且具有大于类型2跃迁的带隙的带隙; 以及从外延层叠体的表面到内部的p型区域6。 pn结15形成在p型区域的尖端处并且位于比第二光接收层13更靠近外延层叠体的表面的位置。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011192838A Light-receiving element, light-receiving element array, hybrid detecting device, photo sensor device, and manufacturing method for light-receiving element array 有权
标题翻译：光接收元件，光接收元件阵列，混合检测装置，照相传感器装置和用于接收元件阵列的制造方法
公开(公告)号：JP2011192838A
公开(公告)日：2011-09-29
申请号：JP2010058396
申请日：2010-03-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NAGAI YOICHI , INOGUCHI YASUHIRO , INADA HIROSHI , NAKAHATA HIDEAKI , AKITA KATSUSHI , ISHIZUKA TAKASHI , FUJII KEI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a light-receiving element and a light-receiving element array that have high light-receiving sensitivity in a near-infrared range, a manufacturing method for the light-receiving element array, a hybrid detecting device, and an optical sensor device. SOLUTION: A light-receiving layer 3 having a band-gap wavelength of 1.65 to 3.0 μm is composed of a type 2 MQW formed of (GaAsSb/InGaAs) or (GaAsSb/InGaAsN (P, Sb)). Light-receiving elements are separated from adjacent light-receiving elements via grooves or impurity concentration distributions. An electrode 11 for each light-receiving element is in ohmic contact with an n-type region 6 formed on a cap layer for each light-receiving element. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供在近红外范围内具有高的光接收灵敏度的光接收元件和光接收元件阵列，光接收元件阵列的制造方法，混合检测装置和光学传感器装置。解决方案：带隙波长为1.65〜3.0μm的光接收层3由（GaAsSb / InGaAs）或（GaAsSb / InGaAsN（P，Sb））形成的2型MQW构成。光接收元件经由沟槽或杂质浓度分布与相邻的光接收元件分离。每个光接收元件的电极11与形成在每个光接收元件的盖层上的n型区域6欧姆接触。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009179533A METHOD FOR GROWING AlxGa1-xN SINGLE CRYSTAL 有权
标题翻译：用于生长Al x Ga 1-x N单晶的方法
公开(公告)号：JP2009179533A
公开(公告)日：2009-08-13
申请号：JP2008021477
申请日：2008-01-31
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MIYANAGA TOMOMASA , MIZUHARA NAHO , TANIZAKI KEISUKE , KAWASE TOMOHIRO , NAKAHATA HIDEAKI
IPC分类号： C30B29/38 , C30B23/06 , H01L21/203
CPC分类号： C30B29/403 , C30B23/025 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a large-size, high-quality Al
x Ga
1-x N single crystal.
SOLUTION: The method for growing the Al
x Ga
1-x N single crystal includes a process for preparing an Al
y Ga
1-y N (0 x Ga
1-x N (0 y Ga
1-y N seed crystal 4.
COPYRIGHT: (C)2009,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式