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1. 发明专利

JP3520346B2 Semiconductor device 有权
公开(公告)号：JP3520346B2
公开(公告)日：2004-04-19
申请号：JP2001250523
申请日：2001-08-21
申请人：三洋電機株式会社 , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人：信介原田 , 孝四戸 , 哲夫畠山 , 憲司福田 , 和雄荒井 , 誠二鈴木
IPC分类号： H01L29/78 , H01L29/12

2. 发明专利

JP5545682B2 A method of manufacturing a semiconductor device 有权
公开(公告)号：JP5545682B2
公开(公告)日：2014-07-09
申请号：JP2012031660
申请日：2012-02-16
申请人：株式会社東芝 , 一般財団法人電力中央研究所 , 独立行政法人産業技術総合研究所
发明人：哲夫畠山 , 孝四戸 , 秀一土田 , 純寿先崎 , 憲司福田
IPC分类号： H01L29/78 , H01L21/205 , H01L21/336 , H01L29/12 , H01L29/739

3. 发明专利

JP5306043B2 Digital tv broadcast reception systems, digital tv broadcast reception processing device 有权
公开(公告)号：JP5306043B2
公开(公告)日：2013-10-02
申请号：JP2009110089
申请日：2009-04-28
申请人：株式会社東芝
发明人：浩二金澤 , 哲夫畠山
IPC分类号： H04N5/91 , H04H60/16 , H04H60/23 , H04H60/80 , H04L9/14 , H04N7/167 , H04N21/4367
摘要： PROBLEM TO BE SOLVED: To provide a digital television (TV) broadcast receiving apparatus that can be used, in common with a plurality of electronic apparatuses for recording and reproducing of contents. SOLUTION: A device key management part 300 of the digital television (TV) broadcast receiving apparatus 100 records contents key management data 2101, which is used for encrypting and decoding of a cryptographic key for encryption of broadcast program data (contents 2102 to be encrypted) accumulated in personal computers (PCs) 200, to a nonvolatile memory 301 for key data management, respectively, according to the plurality of PCs 200. The device key management part 300 selectively uses the device key corresponding to the PC 200, when the digital TV broadcast receiving apparatus 100 is loaded to the PC 200. COPYRIGHT: (C)2011,JPO&INPIT

4. 发明专利

JP5132504B2 Information recording and reproducing apparatus and information recording and reproducing method 有权
公开(公告)号：JP5132504B2
公开(公告)日：2013-01-30
申请号：JP2008245313
申请日：2008-09-25
申请人：株式会社東芝
发明人：和代黒田 , 哲夫畠山
IPC分类号： H04N5/93 , G11B27/34 , H04N5/76 , H04N5/92

5. 发明专利

JP4153811B2 The high-voltage semiconductor device and a method of manufacturing the same 有权
标题翻译：空值
公开(公告)号：JP4153811B2
公开(公告)日：2008-09-24
申请号：JP2003076252
申请日：2003-03-19
申请人：株式会社東芝
发明人：孝四戸 , 哲夫畠山
IPC分类号： H01L21/28 , H01L29/80 , H01L29/12 , H01L29/47 , H01L29/74 , H01L29/78 , H01L29/872
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0843 , H01L29/1058 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/7392 , H01L29/7722 , H01L29/7811 , H01L29/7832

6. 发明专利

JP5558393B2 Semiconductor device 有权
公开(公告)号：JP5558393B2
公开(公告)日：2014-07-23
申请号：JP2011052789
申请日：2011-03-10
申请人：株式会社東芝
发明人：哲夫畠山
IPC分类号： H01L29/872 , H01L29/06 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/861 , H01L29/868
CPC分类号： H01L29/872 , H01L29/0615 , H01L29/063 , H01L29/1608

7. 发明专利

JP4909855B2 Information-processing device 有权
公开(公告)号：JP4909855B2
公开(公告)日：2012-04-04
申请号：JP2007252091
申请日：2007-09-27
申请人：株式会社東芝
发明人：紀之平山 , 哲夫畠山 , 和代黒田
IPC分类号： H04L9/32 , G06F21/00 , G06F21/12 , G06F21/33 , H04L9/08 , H04N7/16 , H04N7/173 , H04N21/418 , H04N21/442
摘要： PROBLEM TO BE SOLVED: To provide an information processor capable of putting a part of a plurality of copyright protection devices into a stop state so as to save power in the information processor provided with the plurality of copyright protection devices. SOLUTION: The information processor 1 is provided with: a first tuner 5 1 and a second tuner 5 2 ; a first copyright protection unit 6 1 and a second copyright protection unit 6 2 for applying descramble processing to content data received by the first tuner 5 1 and the second tuner 5 2 ; and a storage medium installation part 21 constructed so that a storage medium for storing scramble key data necessary for the descramble processing is freely removable. The first copyright protection unit 6 1 detects whether or not the storage medium installation part 21 installs the storage medium 7 and notifies the second copyright protection unit of a non-installation notification signal indicating non-installation of the storage medium 7 when the storage medium 7 is not installed by the storage medium installation part 21. COPYRIGHT: (C)2009,JPO&INPIT

8. 发明专利

JP4189415B2 Semiconductor device 有权
公开(公告)号：JP4189415B2
公开(公告)日：2008-12-03
申请号：JP2006182703
申请日：2006-06-30
申请人：株式会社東芝
发明人：孝四戸 , 千春太田 , 哲夫畠山 , 譲司西尾
IPC分类号： H01L29/47 , H01L29/06 , H01L29/12 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/872
CPC分类号： H01L29/66712 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/1608 , H01L29/402 , H01L29/6606 , H01L29/66068 , H01L29/66143 , H01L29/66333 , H01L29/7395 , H01L29/7811 , H01L29/8611 , H01L29/872

9. 发明专利

JP3648476B2 Portable information devices 有权
公开(公告)号：JP3648476B2
公开(公告)日：2005-05-18
申请号：JP2001367851
申请日：2001-11-30
申请人：株式会社東芝
发明人：哲夫畠山
IPC分类号： F16C11/04 , F16C11/06 , G06F1/16 , G06F3/02 , G06F15/02 , H05K5/02 , H05K5/03
CPC分类号： G06F1/169 , G06F1/162 , G06F1/1671 , G06F1/1677 , G06F2200/1614

10. 发明专利

JP5044151B2 Semiconductor device 有权
公开(公告)号：JP5044151B2
公开(公告)日：2012-10-10
申请号：JP2006175184
申请日：2006-06-26
申请人：株式会社東芝
发明人：哲夫畠山
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12
CPC分类号： H01L29/66068 , H01L29/0619 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/7802
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing application of high electric field on a gate insulating film. SOLUTION: The semiconductor device includes a semiconductor substrate 11 of first conductive type; a first semiconductor region of first conductive type having a first portion 12 in contact with the semiconductor substrate and a second portion 15 projected from the first portion, in which the second portion has a lower face smaller in width than that of the upper face, and the upper face of the second portion has a recess on the upper face of the semiconductor substrate; and a second semiconductor region 14 of second conductive type arranged on the first portion and pinching the second portion. Further, the device has a third semiconductor region 16 of second conductive type arranged in the recess and having width smaller than that of the upper face of the second portion; a source region 19 arranged on the upper face of the second semiconductor region; a gate insulating film 17 arranged on the second portion, the second semiconductor region, and the third semiconductor region; a gate electrode 18 arranged on the gate insulating film; a source electrode 23; and a drain electrode 13. COPYRIGHT: (C)2008,JPO&INPIT

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