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1. 发明专利

JP2013216565A Piezoelectric material, piezoelectric element, and electronic apparatus 有权
标题翻译：压电材料，压电元件和电子设备
公开(公告)号：JP2013216565A
公开(公告)日：2013-10-24
申请号：JP2013051618
申请日：2013-03-14
申请人： Canon Inc , キヤノン株式会社
发明人： MATSUDA KATAYOSHI , FURUTA TATSUO , SHIMIZU KOJI , KOYAMA SHINYA , KAMIBAYASHI AKIRA , SAITO HIROSHI , KUBOTA JUN , AKASHI KENICHI , HAYASHI JUNPEI , YABUTA HISATO
IPC分类号： C04B35/462 , B06B1/06 , B41J2/045 , B41J2/055 , G02B7/04 , G03B17/02 , H01L41/083 , H01L41/09 , H01L41/187 , H02N2/00
CPC分类号： H01L41/1871 , B08B7/02 , B41J2/14201 , B41J2/14233 , C04B35/4682 , C04B35/6261 , C04B35/62695 , C04B2235/3208 , C04B2235/3225 , C04B2235/3236 , C04B2235/3244 , C04B2235/3248 , C04B2235/3262 , C04B2235/3281 , C04B2235/3418 , C04B2235/449 , C04B2235/5445 , C04B2235/6567 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/79 , H01L41/083 , H01L41/0973 , H02N2/103 , H02N2/106 , H02N2/163
摘要： PROBLEM TO BE SOLVED: To provide a lead-free piezoelectric material having a high piezoelectric constant and a high mechanical quality factor in a wide operating temperature range.SOLUTION: A piezoelectric material includes a perovskite-type metal oxide represented by following general formula (1): (BaCa)(TiZr)O(1.00≤a≤1.01, 0.125≤x
摘要翻译：要解决的问题：提供在宽工作温度范围内具有高压电常数和高机械品质因数的无铅压电材料。解决方案：压电材料包括由以下通式（1）表示的钙钛矿型金属氧化物）：作为主要成分的（BaCa）（TiZr）O（1.00≤a≤1.01,0.125≤x<0.155,0.041≤y≤0.074）。在压电材料中，金属氧化物含有Mn，Mn含量≥0.12点。 wt和≤0.40pts。相对于100重量份金属氧化物，以金属为基准。

2. 发明专利

JP2012057142A Anti-thermally-expansive resin and anti-thermally-expansive metal 有权
标题翻译：抗热膨胀树脂和抗热膨胀金属
公开(公告)号：JP2012057142A
公开(公告)日：2012-03-22
申请号：JP2011097852
申请日：2011-04-26
申请人： Canon Inc , Kyoto Univ , キヤノン株式会社 , 国立大学法人京都大学
发明人： KUBOTA JUN , MIURA KAORU , YABUTA HISATO , MATSUMURA YOSHIHIKO , SHIMAKAWA YUICHI , AZUMA MASAKI
IPC分类号： C08L101/00 , C08K3/22 , C08L79/04
CPC分类号： C04B35/453 , C01G53/006 , C01G53/40 , C01P2002/52 , C01P2002/54 , C01P2004/61 , C01P2006/32 , C04B35/50 , C08K3/11 , C08K3/22 , C09K5/06 , C22C1/10
摘要： PROBLEM TO BE SOLVED: To provide resin-based and metal-based anti-thermally-expansive members which have small thermal expansion.SOLUTION: An anti-thermally-expansive resin or an anti-thermally-expansive metal comprises a resin or a metal having a positive linear expansion coefficient at 20°C and solid particles dispersed in the resin or the metal, and the solid particle contains at least an oxide represented by formula (1). Formula (1) is (BiM)NiO(wherein, M is at least one metal among La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y and In. x represents a numerical value of 0.02≤x≤0.15).
摘要翻译：要解决的问题：提供具有小的热膨胀的树脂基和金属基的抗热膨胀性构件。解决方案：防热膨胀树脂或抗热膨胀性金属包括在20℃下具有正线性膨胀系数的树脂或金属，分散在树脂或金属中的固体颗粒，固体颗粒至少含有由式（1）表示的氧化物。公式（1）是（Bi 1-x M x ）NiO 3 其中，M是La，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Y和In中的至少一种金属，x表示0.02≤x的数值 ≤0.15）。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011213581A Bismuth iron oxide powder, method of producing the same, dielectric ceramics, piezoelectric element, liquid ejection head and ultrasonic motor 有权
标题翻译：双锡氧化铁粉，其制造方法，电介质陶瓷，压电元件，液体喷射头和超声波电机
公开(公告)号：JP2011213581A
公开(公告)日：2011-10-27
申请号：JP2011050307
申请日：2011-03-08
申请人： Canon Inc , Fuji Kagaku Kk , キヤノン株式会社 , 富士化学株式会社
发明人： YABUTA HISATO , KUBOTA JUN , SHIMADA MIKIO , TAKASHIMA KENJI , UCHIDA FUMIO , MAEDA KENJI , SHIMIZU CHIEMI
IPC分类号： C01G49/00 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , C04B35/00 , C04B35/626 , H01L41/08 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/257 , H01L41/317 , H01L41/333 , H01L41/39 , H01L41/43
CPC分类号： C01G49/02 , B82Y30/00 , C01G29/00 , C01G49/0018 , C01P2002/34 , C01P2002/60 , C01P2002/72 , C01P2002/76 , C01P2004/04 , C01P2004/10 , C01P2004/82 , C01P2006/60 , C04B35/26 , C04B2235/3298 , C04B2235/5445 , C04B2235/5454 , C04B2235/76 , C04B2235/768 , C04B2235/80 , C04B2235/85 , H01L41/1878 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide a lead-free dielectric ceramics having a low leakage current and to provide a bismuth iron oxide powder as a raw material of the lead-free dielectric ceramics.SOLUTION: The bismuth iron oxide powder is made of a bithmuth iron oxide and comprises at least: grains (A) having a perovskite-type crystal structure; grains (B) having a crystal structure classified to a space group Pbam; and grains (C) classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains made of the bismuth iron oxide crystals having the perovskite-type crystal structure.
摘要翻译：要解决的问题：提供具有低漏电流的无铅电介质陶瓷，并提供作为无铅电介质陶瓷的原料的氧化铋铁粉。解决方案：氧化铋粉末由硅酸钡氧化铁，并且至少包括：具有钙钛矿型晶体结构的晶粒（A）具有分类为空间群Pbam的晶体结构的晶粒（B）和分类为空间群I23的粒子（C）。电介质陶瓷由氧化铋铁氧化物制成，其中具有分类为空间群Pbam的晶体结构的氧化铋晶体分布在由具有钙钛矿型晶体结构的氧化铁铋晶体制成的晶粒的晶界处。

4. 发明专利

JP2009231444A Amorphous oxide film and semiconductor element 有权
标题翻译：非晶氧化膜和半导体元件
公开(公告)号：JP2009231444A
公开(公告)日：2009-10-08
申请号：JP2008073480
申请日：2008-03-21
申请人： Canon Inc , キヤノン株式会社
发明人： TAKADA KAZUHIRO , YABUTA HISATO , HAYASHI SUSUMU , WATANABE TOMOHIRO , KACHI NOBUYUKI
IPC分类号： H01L29/786 , C01G15/00
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive element with high quality and performance.
SOLUTION: An amorphous oxide film used as a channel layer 13 of a transistor including a gate electrode 12, a drain electrode 17, and a source electrode 18 has orderliness in structure over a distance being ≥5 Å and
摘要翻译：要解决的问题：提供具有高质量和性能的廉价元件。解决方案：用作包括栅电极12，漏电极17和源电极18的晶体管的沟道层13的非晶氧化物膜在一定距离上的结构有序等级为≥5和<22。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008277326A Amorphous oxide semiconductor, semiconductor device and thin-film transistor 审中-公开
标题翻译：非晶氧化物半导体，半导体器件和薄膜晶体管
公开(公告)号：JP2008277326A
公开(公告)日：2008-11-13
申请号：JP2007115617
申请日：2007-04-25
申请人： Canon Inc , キヤノン株式会社
发明人： YABUTA HISATO , ENDO AYANORI , KACHI NOBUYUKI , HAYASHI SUSUMU
IPC分类号： H01L29/786
CPC分类号： H01L29/247 , H01L29/66969 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor and an element having excellent characteristics in an amorphous oxide semiconductor in which the composition ratios of In, Ga and Zn are expressed by In x Ga y Zn z , a semiconductor device and a thin-film transistor. SOLUTION: In the amorphous oxide semiconductor in which the composition ratios of In, Ga and Zn are expressed by In x Ga y Zn z , its density (mass per unit volume) is not less than 0.94×(7.121x+5.941y+5.675z)/(x+y+z). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种半导体和在非晶氧化物半导体中具有优异特性的元素，其中In，Ga和Zn的组成比由In x Ga y Zn ，半导体器件和薄膜晶体管。解决方案：在其中In，Ga和Zn的组成比由In x Ga Zn Z SB表示的非晶氧化物半导体中 >，其密度（单位体积质量）不小于0.94×（7.121x + 5.941y + 5.675z）/（x + y + z）。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006165531A Method of manufacturing field effect transistor 有权
标题翻译：制造场效应晶体管的方法
公开(公告)号：JP2006165531A
公开(公告)日：2006-06-22
申请号：JP2005325369
申请日：2005-11-09
申请人： Canon Inc , Tokyo Institute Of Technology , キヤノン株式会社 , 国立大学法人東京工業大学
发明人： YABUTA HISATO , SANO MASAFUMI , IWASAKI TATSUYA , HOSONO HIDEO , KAMIYA TOSHIO , NOMURA KENJI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide a new method of manufacturing a field effect transistor. SOLUTION: Prior to forming an amorphous oxide layer on a substrate, the substrate surface is irradiated with ultraviolet rays in an ozone atmosphere, is irradiated with a plasma, or is cleaned with a chemical solution containing hydrogen peroxide. Alternatively, a process of forming an active layer, containing an amorphous oxide, is performed in an atmosphere containing at least one selected from the group consisting of ozone gas, nitrogen oxide gas and the like. Alternatively, heat treatment is performed at a temperature higher than the deposition temperature of an amorphous oxide layer after forming the amorphous oxide layer on the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造场效应晶体管的新方法。解决方案：在衬底上形成无定形氧化物层之前，在臭氧气氛中用紫外线照射衬底表面，用等离子体照射，或用含有过氧化氢的化学溶液进行清洗。或者，在含有选自臭氧气体，氮氧化物气体等中的至少一种的气氛中进行含有无定形氧化物的活性层的形成工序。或者，在基板上形成无定形氧化物层之后，在高于无定形氧化物层的沉积温度的温度下进行热处理。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004018968A Chemical vapor deposition method and system 审中-公开
公开(公告)号：JP2004018968A
公开(公告)日：2004-01-22
申请号：JP2002177217
申请日：2002-06-18
申请人： Canon Inc , キヤノン株式会社
发明人： YABUTA HISATO
IPC分类号： C23C16/18 , C23C16/48 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To solve the problems that, in a chemical vapor deposition method of ionizing an organometallic compound gas and irradiating a substrate therewith, when the molecular weight of the organometallic compound is high, and the molecules having a large number of constitutive elements are ionized, the kinds of the produced organometallic ions are many and the molecular weights are various, so that the velocity is not uniform owing to acceleration and deceleration by electric fields or magnetic fields, and deposited film quality is inferior and efficiency is also inferior by methods with thermal electronic irradiation or plasma.
SOLUTION: An ionized reagent gas is mixed with an organometallic compound gas as a gaseous starting material, so that the MO compound gas is ionized. The objective organometallic compound ions are subjected to mass separation and are applied to a substrate with the velocity controlled.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2015034121A 圧電材料、圧電素子、および電子機器审中-公开
标题翻译：压电材料，压电元件和电子设备
公开(公告)号：JP2015034121A
公开(公告)日：2015-02-19
申请号：JP2014109341
申请日：2014-05-27
申请人：キヤノン株式会社 , Canon Inc
发明人： TANAKA HIDENORI , WATANABE TAKAYUKI , MURAKAMI SHUNSUKE , FURUTA TATSUO , YABUTA HISATO
IPC分类号： C04B35/462 , B41J2/16 , H01L41/09 , H01L41/187
CPC分类号： H01L41/1871 , B06B1/06 , B06B1/0644 , B41J2/045 , B41J2/14 , B41J2/14233 , B41J2/1607 , B41J2/164 , B41J2202/03 , C04B35/4682 , C04B2235/3203 , C04B2235/3208 , C04B2235/3236 , C04B2235/3244 , C04B2235/3248 , C04B2235/3262 , C04B2235/3263 , C04B2235/3293 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/365 , C04B2235/449 , C04B2235/79 , C04B2235/80 , G02B27/0006 , H01L41/0477 , H01L41/083 , H01L41/09 , H01L41/0973 , H01L41/183 , H01L41/277 , H02N2/10 , H02N2/106 , H02N2/16 , H02N2/163 , H02N2/22 , H04N5/2171 , H04N5/2253
摘要：【課題】鉛を含まず、動作温度範囲内での圧電特性の変動が少なく、高機械的品質係数であって圧電特性が良好な圧電材料を提供する。【解決手段】下記一般式(1)で表わされるペロブスカイト型金属酸化物を含む主成分と、Mn、Li、Biを有する圧電材料であって、Mnの含有量が金属酸化物100重量部に対して金属換算で0.04重量部以上0.36重量部以下、Liの含有量αが金属酸化物100重量部に対して金属換算で0.0012重量部以下(0重量部を含む)、Biの含有量&bgr;が金属酸化物100重量部に対して金属換算で0.042重量部以上0.850重量部以下である圧電材料。(Ba1−xCax)a(Ti1−y−zZrySnz)O3(1)(式中、0.09≦̸x≦̸0.30、0.025≦̸y≦̸0.085、0≦̸z≦̸0.02、0.986≦̸a≦̸1.02)【選択図】図19
摘要翻译：要解决的问题：提供一种具有高机械品质因数和令人满意的压电特性的无铅压电材料，在工作温度范围内的压电特性几乎没有变化。解决方案：一种压电材料包括：含有钙钛矿型的主要成分，由（BaCa）（TiZrSn）O定义的由通式（1）表示的金属氧化物，其中x，y，z和a满足0.09≤x≤0.30,0.025≤y≤0.085,0≤z≤0.02和0.986≤ a≤1.02; 和Mn，Li和Bi。 Mn含量为0.04重量份至0.36 pt.wt. 包括以金属为基础的100重量份的金属氧化物，Li含量α为0.0012重量份。或更少（包括0重量级），以金属计，基于100重量份。的金属氧化物，以及Bi含量＆bgr; 来自0.042 pt.wt. 至0.850 pt.wt. 包括以金属为基础的100重量份的金属氧化物。

9. 发明专利

JP2012084828A Piezoelectric material, piezoelectric element, liquid discharge head and ultrasonic motor 有权
标题翻译：压电材料，压电元件，液体放电头和超声波电机
公开(公告)号：JP2012084828A
公开(公告)日：2012-04-26
申请号：JP2010292850
申请日：2010-12-28
申请人： Canon Inc , Sophia School Corp , Tokyo Institute Of Technology , キヤノン株式会社 , 国立大学法人東京工業大学 , 学校法人上智学院
发明人： KUBOTA JUN , MIURA KAORU , YABUTA HISATO , WATANABE TAKAYUKI , HAYASHI JUNPEI , FUNAKUBO HIROSHI , YAMADA TOMOAKI , YASUI SHINTARO , YAZAWA KEISUKE , OSADA JUNICHI , UCHIDA HIROSHI
IPC分类号： H01L41/187 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , C04B35/00 , C04B35/462 , C23C14/08 , C23C16/40 , H01L41/09 , H01L41/18 , H01L41/39 , H02N2/00
CPC分类号： H01L41/18 , C04B35/01 , C04B35/016 , C04B35/2625 , C04B35/44 , C04B35/453 , C04B35/475 , C04B35/6325 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3232 , C04B2235/3267 , C04B2235/3272 , C04B2235/3284 , C04B2235/3286 , C04B2235/3298 , C04B2235/449 , C04B2235/76 , C04B2235/765 , C04B2235/768 , C04B2235/787 , H01L41/0805 , H01L41/0973 , H01L41/1878 , H01L41/316 , H01L41/318 , H02N2/106 , H02N2/163
摘要： PROBLEM TO BE SOLVED: To provide a Bi-based piezoelectric material with excellent piezoelectric characteristics.SOLUTION: A piezoelectric material comprises a perovskite-type metal oxide represented by the following general formula (1). (In the formula, A represents not less than one element including at least Bi element selected from Bi element and trivalent metal elements. M represents at least one element of Fe, Al, Sc, Mn, Y, Ga, and Yb, 0.9≤x≤1.25, 0.4≤j≤0.6, 0.4≤k≤0.6, 0.09≤l≤0.49, 0.19≤m≤0.64, 0.13≤n≤0.48, and l+m+n=1.)
摘要翻译：解决的问题：提供具有优异的压电特性的Bi系压电材料。解决方案：压电材料包括由以下通式（1）表示的钙钛矿型金属氧化物。（式中，A表示不低于选自Bi元素和三价金属元素中的至少Bi元素的1种元素，M表示Fe，Al，Sc，Mn，Y，Ga和Yb中的至少一种元素，0.9≤ x≤1.25,0.4≤j≤0.6,0.4≤k≤0.6,0.09≤l≤0.49,0.19≤m≤0.64,0.13≤n≤0.48，l + m + n = 1）。权利要求（（ C）2012，JPO＆INPIT

10. 发明专利

JP2009272427A Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：JP2009272427A
公开(公告)日：2009-11-19
申请号：JP2008121384
申请日：2008-05-07
申请人： Canon Inc , キヤノン株式会社
发明人： SATO AYUMI , HAYASHI SUSUMU , YABUTA HISATO , SANO MASAFUMI
IPC分类号： H01L21/336 , G02F1/1368 , H01L29/786 , H01L51/50
CPC分类号： H01L29/7869 , H01L29/78621
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor in a coplanar structure with a small threshold voltage change due to an electric stress; and to provide a method of manufacturing the transistor. SOLUTION: The thin-film transistor has at least a gate electrode, a gate insulating layer, an oxide semiconductor layer formed of a source electrode, a drain electrode and a channel region, a channel protective layer and an interlayer insulating layer on a substrate. The channel protective layer is formed of one or more layers. A layer brought into contact with the oxide semiconductor layer is constituted of an insulator comprising oxygen. The film thickness of an end part of the channel protective layer is smaller than that of a center part of the channel protective layer. The interlayer insulating layer comprises hydrogen; and a region of the oxide semiconductor layer, which is directly brought into contact with the interlayer insulating layer, forms source/drain electrodes. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有由于电应力导致的小阈值电压变化的共面结构中的薄膜晶体管; 并提供制造晶体管的方法。解决方案：薄膜晶体管至少具有栅电极，栅极绝缘层，由源电极，漏电极和沟道区形成的氧化物半导体层，沟道保护层和层间绝缘层底物。沟道保护层由一层或多层形成。与氧化物半导体层接触的层由包含氧的绝缘体构成。沟道保护层的端部的膜厚小于沟道保护层的中心部分的膜厚。层间绝缘层包括氢; 并且直接与层间绝缘层接触的氧化物半导体层的区域形成源极/漏极。版权所有（C）2010，JPO＆INPIT

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