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1. 发明专利

JP4454034B2 Plasma processing apparatus 有权
公开(公告)号：JP4454034B2
公开(公告)日：2010-04-21
申请号：JP2006307096
申请日：2006-11-13
申请人：株式会社エフオーアイ
发明人：理一郎原野 , 裕奥村
IPC分类号： H01L21/3065 , C23C16/44 , C23C16/509 , H01L21/205 , H05H1/46

2. 发明专利

JP4151855B2 Vacuum chamber 失效
公开(公告)号：JP4151855B2
公开(公告)日：2008-09-17
申请号：JP27059397
申请日：1997-09-17
申请人：株式会社エフオーアイ
发明人：隆佐藤 , 裕奥村 , 哲夫徳村 , 利規瀬川 , 清隆石橋 , 和基茂山 , 俊久野沢
IPC分类号： B65G49/00 , H01L21/677 , H01L21/68

3. 发明专利

JP4001355B2 Plasma generating apparatus 失效
公开(公告)号：JP4001355B2
公开(公告)日：2007-10-31
申请号：JP6613698
申请日：1998-03-02
申请人：株式会社エフオーアイ
发明人：裕奥村 , 哲夫徳村 , 清隆石橋 , 俊久野沢
IPC分类号： H01L21/302 , H05H1/46 , C23C16/50 , C23F4/00 , H01L21/205 , H01L21/3065 , H01L21/31

4. 发明专利

JP2007059944A Plasma treatment apparatus 有权
公开(公告)号：JP2007059944A
公开(公告)日：2007-03-08
申请号：JP2006307098
申请日：2006-11-13
申请人： Foi:Kk , 株式会社エフオーアイ
发明人： OKUMURA YUTAKA , HARANO RIICHIRO
IPC分类号： H01L21/3065 , C23C16/505 , H01L21/205 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To realize a plasma treatment apparatus excellent in pressure cotrollability in addition to supply of uniform plasma with high quality. SOLUTION: In the plasma treatment apparatus in which plasma producing spaces 22 are adjacent to and communicate with a plasma processing space 13, the plasma producing spaces 22 are formed so as to be distributed or the like and a magnetic circuit 25 for confining electrons into each plasma producing space 22 is additionally provided. Controllability of a plasma component ratio is good. Compatibility between ensuring of uniformity of plasma distribution and prevention of gas inflow from the plasma processing space to the plasma producing spaces can be established. Furthermore, pressure controllability can be improved by surrounding the plasma processing space 13 with a movable wall member 40. COPYRIGHT: (C)2007,JPO&INPIT

5. 发明专利

JP2007059943A Plasma treatment apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：JP2007059943A
公开(公告)日：2007-03-08
申请号：JP2006307097
申请日：2006-11-13
申请人： Foi:Kk , 株式会社エフオーアイ
发明人： OKUMURA YUTAKA , HARANO RIICHIRO
IPC分类号： H01L21/3065 , C23C16/505 , H01L21/205 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To realize a plasma treatment apparatus excellent in pressure cotrollability in addition to supply of uniform plasma with high quality. SOLUTION: In the plasma treatment apparatus in which plasma producing spaces 22 are adjacent to and communicate with a plasma processing space 13, the plasma producing spaces 22 are formed so as to be distributed or the like and a magnetic circuit 25 for confining electrons into each plasma producing space 22 is additionally provided. Controllability of a plasma component ratio is good. Compatibility between ensuring of uniformity of plasma distribution and prevention of gas inflow from the plasma processing space to the plasma producing spaces can be established. Furthermore, pressure controllability can be improved by surrounding the plasma processing space 13 with a movable wall member 40. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：除了提供均匀等离子体以外，还具有优异的压力控制性能的等离子体处理装置。解决方案：在等离子体产生空间22与等离子体处理空间13相邻并与其连通的等离子体处理装置中，等离子体产生空间22形成为分布等，以及用于限制的磁路25 另外提供电子到每个等离子体产生空间22中。等离子体组分比的可控性良好。可以建立确保等离子体分布的均匀性和防止从等离子体处理空间到等离子体产生空间的气体流入之间的兼容性。此外，通过用可移动壁构件40围绕等离子体处理空间13可以提高压力控制性。版权所有：（C）2007，JPO＆INPIT

6. 发明专利

JP2006281440A Rotation transmission mechanism for vacuum chamber 有权
标题翻译：真空室旋转传动机构
公开(公告)号：JP2006281440A
公开(公告)日：2006-10-19
申请号：JP2006148760
申请日：2006-05-29
申请人： Foi:Kk , 株式会社エフオーアイ
发明人： OKUMURA YUTAKA , SATO TAKASHI , TOKUMURA TETSUO , SEGAWA TOSHINORI , NOZAWA TOSHIHISA , ISHIBASHI KIYOTAKA , MOYAMA KAZUKI
IPC分类号： B25J9/06 , B25J19/00 , B65G49/06 , B65G49/07 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To reduce deformation, to facilitate maintenance work and to eliminate mutual influence of an electricity feeding wire of an electric motor and a chamber lid when the number of rotation transmission shafts is increased. SOLUTION: The rotation transmission mechanism for the vacuum chamber is provided with: cylindrical bodies 330+530 standingly provided on a bottom 11 of the vacuum chamber 10 and reaching its upper lid 12; and a plurality of pairs of rotation bodies 31+35, 36+39, 51+55, 56+59 clamping side walls 330, 530 of the cylindrical bodies from the inside and the outside and magnetically bonded to them. The mechanism is provided with an attachment means 120 for closely adhering an upper end portion of the cylindrical body to the upper lid 12 of the vacuum chamber. In the cylindrical bodies 330+530, a plurality of short cylindrical bodies 330, 530 are vertically connected to each other. The electricity feeding wires 511, 561 to the electric motors 55a, 59a for driving the rotation bodies 55, 59 are drawn out below the vacuum chamber 10 through the cylindrical bodies 330+530. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：当旋转传动轴的数量增加时，减小变形，便于维护工作和消除电动机和室盖的馈电线的相互影响。解决方案：真空室的旋转传递机构设置有：竖立设置在真空室10的底部11上并到达其上盖12的圆筒体330 + 530; 以及多对旋转体31 + 35,36 + 39,51 + 55,56 + 59将圆柱体的侧壁330,530从内部和外部夹紧并且磁性地结合到它们上。该机构设置有用于将圆筒体的上端部紧密地粘附到真空室的上盖12的附接装置120。在圆柱体330 + 530中，多个短圆柱体330,530彼此垂直连接。向驱动旋转体55,59的电动机55a，59a的供电线511,561通过圆筒体330 + 530被抽出到真空室10的下方。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP3834806B2 Plasma generating apparatus 失效
公开(公告)号：JP3834806B2
公开(公告)日：2006-10-18
申请号：JP15919097
申请日：1997-06-02
申请人：株式会社エフオーアイ
发明人：隆佐藤 , 裕奥村 , 哲夫徳村 , 利規瀬川 , 清隆石橋 , 和基茂山 , 俊久野沢
IPC分类号： H01L21/3065 , H05H1/46 , H01L21/205 , H01L21/302

8. 发明专利

JP2005044938A Substrate transfer device with aligner 审中-公开
标题翻译：带对准器的基板传输装置
公开(公告)号：JP2005044938A
公开(公告)日：2005-02-17
申请号：JP2003201908
申请日：2003-07-25
申请人： Foi:Kk , 株式会社エフオーアイ
发明人： SAITO NAOMICHI
IPC分类号： B65G49/07 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate transfer device with an aligner, that does not use a rotating mechanism only used for alignment and is not limited undesirably for alignment position.
SOLUTION: An alignment stage 70 which bears a wafer 12 is provided in the transferrable range of the substrate transfer device 60 separately from the device 60. Chucks 61 and 62 which hold the wafer 12 by pressing the edge of the wafer 12 at many points and, at the same time, adjust the position of the center of the wafer 12 and a plurality of notch sensors 64 are fitted to a wafer hand 24. The turn position of the wafer 12 is adjusted by detecting a notch without rotating the wafer 12 by moving the notch sensors 64 along the edge of the wafer 12 by utilizing the rotating function of a multi-axis robot 23.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有对准器的基板传送装置，其不使用仅用于对准的旋转机构，并且不限于对准位置的不期望的限制。解决方案：与设备60分开地设置在基板传送装置60的可传送范围内的承载晶片12的对准台70.夹持器61和62，其通过将晶片12的边缘按压在许多点，并且同时调整晶片12的中心的位置，并且多个凹口传感器64被装配到晶片手24.通过检测凹口来调节晶片12的转动位置，而不旋转通过利用多轴机器人23的旋转功能沿着晶片12的边缘移动切口传感器64来使晶片12移动。（C）2005年，JPO和NCIPI

9. 发明专利

JP4594358B2 Plasma processing apparatus 有权
公开(公告)号：JP4594358B2
公开(公告)日：2010-12-08
申请号：JP2007211105
申请日：2007-08-13
申请人：株式会社エフオーアイ
发明人：裕奥村 , 和基茂山 , 俊久野沢
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/205

10. 发明专利

JP2010507878A Plasma processing apparatus and plasma processing method 有权
公开(公告)号：JP2010507878A
公开(公告)日：2010-03-11
申请号：JP2009518657
申请日：2007-11-26
申请人：株式会社エフオーアイ
发明人：ゲオールギービノグラードフ , ウラジーミルメナガリチヴィリ
IPC分类号： H05H1/46 , C23C16/507 , H01L21/3065 , H01L21/31
CPC分类号： H05H1/46 , H01J37/321 , H01J37/32174
摘要：【解決手段】本発明は、プラズマ処理室と、同プラズマ処理室の付近に近接する高周波誘導電界を提供するための少なくとも1つの誘導コイルとを備えたプラズマ処理装置を開示する。さらに、高周波電力源に接続している誘導コイルの端と、開放端とされた誘導コイルの端と、誘導コイルの実質的中心位置にある誘導コイルの接地端とを含んでいる。

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