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81. 发明专利

JPH02178989A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH02178989A
公开(公告)日：1990-07-11
申请号：JP33412988
申请日：1988-12-29
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , KONDO MASAFUMI , SASAKI KAZUAKI , HOSODA MASAHIRO , TAKAHASHI KOUSEI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/065
摘要： PURPOSE:To reduce an oscillation threshold current and an astigmatic difference and to decrease noises by forming a ridge region in a 2-stage structure consisting of a ridge and a current injection path formed on the ridge, and making the width of the ridge larger than that of the current injection path. CONSTITUTION:A ridge region is formed in a 2-stage structure having a ridge 12 and a current injection path 13 formed on the ridge 12, and the width W1 of the ridge 12 is larger than the width W2 of the current injection path 13. Thus, since the ridge 12 having a second clad layer 7 of the thickness adapted for a self-excited oscillation is excited near the gain region of an active layer 5, the distribution of the light generated from the current injection path 13 is suitably extended. Since the width W1 of the ridge 12 is larger than the width W2 of the current injection path 13, the distribution of the light can be made larger than the width of the active layer 5 to which a current is injected. Since the thickness of the second clad layer 7 is thin outside the ridge 12, an equivalent refractive index difference between the inside and the outside of the ridge 12 is increased. Thus, an oscillation threshold current, an astigmatic difference can be reduced, and noises can be decreased.

82. 发明专利

JPH02178986A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH02178986A
公开(公告)日：1990-07-11
申请号：JP33412488
申请日：1988-12-29
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , KONDO MASAFUMI , SASAKI KAZUAKI , HOSODA MASAHIRO , TAKAHASHI KOUSEI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00 , H01S5/042 , H01S5/065
摘要： PURPOSE:To reduce an oscillation threshold current and an astigmatic difference by specifying the relationship of the widths of the ridges of an emitting end face region and a selfexcited oscillation region, and the relationship of the thicknesses of an optical guide layer and a clad layer in a region except the ridges of the emitting end face region and the self-excited oscillation region. CONSTITUTION:The width W2 of a current injection path 12 of one end face near region 14 and the width W1 of the current injection path 12 of a region 13 except the region satisfy the relationship of 1.5W1 d2. In this case, loss due to the difference of light modes of the self-excited oscillation region 13 and the emitting end face region 14 is almost eliminated. Thus, an astigmatic difference can be reduced whole the oscillation threshold current is maintained small.

83. 发明专利

JPH02152292A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH02152292A
公开(公告)日：1990-06-12
申请号：JP30711088
申请日：1988-12-05
申请人： SHARP KK
发明人： KONDO MASAFUMI , SASAKI KAZUAKI , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , HOSODA MASAHIRO , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To provide a semiconductor laser device for an optical disk system with reduced astigmatism and with satisfactory return light noise characteristics by reducing the thickness of a second cladding layer at opposite sides of a ridge region move than that in a resonator, in the vicinity of the exit end surface of the laser light. CONSTITUTION:A ridge wavelength type semiconductor laser device includes, on an n-GaAs substrate 1, an n-GaAs buffer layer 2, an n-Al0.5Ga0.5As first cladding layer 3, an undoped AlxGa1-xAs GRIN layer 4, an undoped multiple quantum well active layer 5, an undoped AlyGa1-yAs GRIN layer 6, a p-Al0.5Ga0.5 As second cladding layer 7 (1mum thick), and a p-GaAs contact layer 8, all being grown by a MBE process. The thickness of the second cladding layer 7 on opposite sides of the ridge region is selected to be 0.4mum for example. Further, the thickness of the second cladding layer 7 on opposite sides of the ridge region located within 100mum from the laser light exit end surface is selected to be 0.2mum for example. The resulting semiconductor laser device is excellent in optical output, return light amount, and relative noise intensity, and is reduced in astigmatism.

84. 发明专利

JPH0279487A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0279487A
公开(公告)日：1990-03-20
申请号：JP23099188
申请日：1988-09-14
申请人： SHARP KK
发明人： KONDO MASAFUMI , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , HOSODA MASAHIRO , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00 , H01S5/30 , H01S5/32 , H01S5/343
摘要： PURPOSE:To provide a quantum well type semiconductor laser element, which has a low threshold current, is oscillative continuously at room temp., and easily manufacturable, by forming quantum well structure, wherein a quantum well layer is pinched by barrier layers, through a single growth of semiconductor layer by MBE method, and forming different electroconductive type within the quantum layer in quantum well structure. CONSTITUTION:Using a substrate 10 of III-V compound, in which a semiconductor growing surface 11 with mirror index at (n11)A-plane (n is integer and A is group III element surface), and a growing surface 12 having different mirror index from the first named growing surface 11 are arranged adjoiningly, a III-V compound semiconductor using group IV amphoteric element as dopant is grown both on these growing surface 11, 12 simultaneously by the MBE method. Thus a semiconductor layer 21 formed on the growing surface 11 of (n11)A is in p-type, while a semiconductor layer 22 formed on the other growing surface 12 is in n-type, and a p-n joint surface 23 is formed between them. Accordingly on the growing surfaces 11, 12 of the substrate 10 a quantum well structure is formed, wherein a clad layer, quantum well layer, and barrier layer are laminated alternately by III-V compound semiconductor, and p-n joint in the quantum well structure by forming clad layer one after another. This improves different activenesses of laser.

85. 发明专利

JPH01128423A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01128423A
公开(公告)日：1989-05-22
申请号：JP28707187
申请日：1987-11-12
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01S5/00
摘要： PURPOSE:To form a semiconductor device where its threshold electric current is small and its efficiency is high, by tilting the face direction of a semiconductor from the principal face direction of crystal faces in the case of the semiconductor device where a compound semiconductor layer containing In and Al on the semiconductor substrate is formed by making its layer perform a vacuum epitaxial growth. CONSTITUTION:The growth face direction of a semiconductor substrate 1 is formed by tilting it at the range of 0.5 deg.-10 deg. from the principal face direction of crystal faces. The substrate where its face direction is tilted in such a manner is formed by the following process: a stepped terrace structure is formed at the crystal surface of the GaAs substrate 1 which is formed by tilting the face direction after having a (100) face as the principal face; in a crystal growth process, when atoms flown onto the substrate 1 perform migration at the flat part 3 of the terrace structure to the utmost L, the atoms are taken in by a kink site 4 to perform a crystal growth. That is to say, a migration length of the flown atoms on the surface of the substrate 1 having the terrace structure is controlled by the flat part length L of the terrace structure. In an epitaxial crystal growth process of a compound semiconductor layer containing In and Al, the flat part length L of the terrace structure is established based on each Al atom 5 having a short migration length.

86. 发明专利

JPH0195582A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0195582A
公开(公告)日：1989-04-13
申请号：JP25324487
申请日：1987-10-07
申请人： SHARP KK
发明人： SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , HAYAKAWA TOSHIRO
IPC分类号： H01S5/00 , H01S5/026
摘要： PURPOSE:To enhance a laser characteristic by a method wherein a slope ranging from a third semiconductor layer to a substrate is formed on a side wall in one direction of a semiconductor composite layer having a first to a third semiconductor layers, a first clad layer, an active layer and a second clad layer are formed in a region on this slope and a laser action layer where each layer thickness has been controlled is installed. CONSTITUTION:A slope ranging from a third semiconductor layer 4 to a semiconductor substrate 1 is formed on a side wall in one direction of a semiconductor composite layer where a first to a third semiconductor layers 2-4 have been formed. As a laser action layer, a first clad layer 6 of a second conductivity type, an active layer 7 and a second clad layer 8 of a first conductivity type are formed one after another in a region 5 on this slope after a thickness of the individual layers 6-8 has been controlled. Accordingly, the active layer 7 is not curved; an electric current is confined inside the second semiconductor layer 2 forming the slope while it is sandwiched between the upper and lower layers 2, 4; the first and the third semiconductor layers 2, 4 function as light- absorbing layers. By this setup, a laser characteristic is enhanced.

87. 发明专利

JPS6465089A METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR 失效
公开(公告)号：JPS6465089A
公开(公告)日：1989-03-10
申请号：JP22093387
申请日：1987-09-03
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI
IPC分类号： C30B23/08 , H01L21/203
摘要： PURPOSE:To obtain a high-quality epitaxial growth, layer of a semiconductor at a relatively low temp. by specifying the component of the acceleration energy of an ion beam in the direction perpendicular to the surface of a substrate at the time of projecting the ion beam. CONSTITUTION:A growth region having a susceptor 31 for fixing the substrate and a heater 32 for heating the substrate is enclosed by a liquid nitrogen shroud 28 and the substrate is carried from an adjacent vacuum chamber 30 through a gate valve 29. Molecular rays for growth are supplied by cells 25-27. An ion source 21 is capable of changing the angle between the ion beam and the substrate surface within a 0-10 deg. range by mounting the source via bellows 22 to a port to be mounted with an electron gun for measuring RHEED. The ion beam of the acceleration epitaxial E(eV) is projected in parallel with or at theta incident angle to the substrate surface toward the substrate during the epitaxial growth so that the component Esintheta of the acceleration energy of the ion beam in the direction perpendicular to the substrate surface is confined to

88. 发明专利

JPS63213390A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63213390A
公开(公告)日：1988-09-06
申请号：JP4633787
申请日：1987-02-27
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , KONDO MASAFUMI , TAKAHASHI KOUSEI
IPC分类号： H01S5/00
摘要： PURPOSE:To reduce the threshold current of a superlattice quantum well semiconductor laser having an oscillation wavelength in a short wavelength region equal to or below 700nm, by setting the total thickness of a quantum well region in an active region in a specified limit. CONSTITUTION:On an N-GaAs substrate 1, the following are continuously grown; an N-GaAs buffer layer 2, an N-AlGaAs clad layer 3, a non-doped AlGaAsGRIN layer 4, an undoped superlattice quantum well active layer 5, an undoped AlGaAsGRIN layer 6, a P-AlGaAs clad layer 7 and a P-GaAs cap layer 8. The total thickness of the quantum well 5 is made more than or equal to 100Angstrom and less than or equal to 400Angstrom . Thereby, the rise of Fermi level at the time of current injection is restrained, the carrier leak from the quantum well 5 is reduced, the grain saturation is restrained, and the threshold current reduction is enabled.

89. 发明专利

JPS63153887A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS63153887A
公开(公告)日：1988-06-27
申请号：JP9931887
申请日：1987-04-22
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , KONDO MASAFUMI , YAMAMOTO SABURO
IPC分类号： H01S5/00 , H01S5/343
摘要： PURPOSE:To enable a laser bean to be outputted with high stability on a low threshold current in a 600nm band by a method wherein a superlattice structure is a laminate wherein two types or more of In GaAlP-based crystals, used for clad layers or quantum well layers as optical guide layers or barrier layers equipped with SCH strauctured or multiple quantum well structures, are alternately stacked up. CONSTITUTION:In a semiconductor laser element 1 that is equipped with an In(Ga1-xAlx)P clad layer formed into a lattice in a substrate 2 and with an In(Ga1-yAly)P quantum well layer, superlattice optical guide layers 5 and 7 are, respectively, laminates wherein fifty each of A-layers 5a of In0.5(Ga0.4Al0.6)0.5 P and B-layers 5b of In0.5(Ga0.9Al0.1)0.5P are alternately stacked up. An active layer 6 is constructed of a superlattice barrier layer 12, a laminate wherein C-layers 10 of In0.5(Ga0.9Al0.1)0.5P and D-layers 11 of in0.5(Ga0.4Al0.6)0.5P are alternately stacked up, and a quantum well layer 13 of In0.5(Ga0.9Al0.1)0.5P. In this way, the fourlayer quantum well layer 13 is isolated by the three-layer superlattice barrier layer 12 for the embodiment of a multiple quantum well structure.

90. 发明专利

JPS61225817A APPARATUS FOR MOLECULAR BEAM EPITAXIAL GROWTH 失效
公开(公告)号：JPS61225817A
公开(公告)日：1986-10-07
申请号：JP6744785
申请日：1985-03-29
申请人： SHARP KK
发明人： HAYAKAWA TOSHIRO , SUYAMA NAOHIRO , TAKAHASHI KOUSEI , YAMAMOTO SABURO
IPC分类号： H01L21/203 , H01L21/26 , H01S5/00
摘要： PURPOSE:To obtain a satisfactory surface of a GaAs substrate by a method wherein a new preliminary processing chamber is provided between the growth chamber and the substrate heating chamber of an apparatus for molecular beam epitaxial growth. CONSTITUTION:A new preliminary processing chamber 3 is provided between the growth chamber 4 and the substrate heating chamber 2. of an apparatus for molecular beam epitaxial growth. A holder for substrate heating and an As cell are provided in the processing chamber 3. After a substrate is subjected to initial degassing, the substrate is transferred into the processing chamber 3 and gradually heated up to the temperature about 600 deg.C while being irradiated by an As4 molecular beam of about 10 -10 torr. After being kept for about 10min, the substrate is gradually cooled down to the temperature not higher than 200 deg.C while being irradiated by the As4 molecular beam. At this stage, the oxide film on the surface of the GaAs substrate is completely removed and a clean surface of the GaAS substrate can be obtained.

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