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81. 发明专利

JPS60145610A ION BEAM DRAWING DEVICE 失效
公开(公告)号：JPS60145610A
公开(公告)日：1985-08-01
申请号：JP296384
申请日：1984-01-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUKAWA TAKAYUKI , TSUKAMOTO KATSUHIRO , ARIMA HIDEAKI , OOGA HIROTOMO
IPC分类号： H01J37/317 , H01J37/00 , H01L21/265
摘要： PURPOSE:To simply process, to use a stable mask and to readily alter ion nucleus by emitting an ion beam obliquely from above to a mask pattern made of a material which is secured onto a thick supporting substrate and contains object ion element to draw the prescribed shape by the secondary ion beam, and projecting it. CONSTITUTION:An ion beam 10 of uniform strength is produced from an ion generation source using gas which can be readily ionized like argon, xenon, oxygen or nitrogen, and incident obliquely from above to the surface of a mask pattern 12 on a supporting substrate 11. A large quantity of the secondary ion beam 12a of the element for forming a pattern is dissipated in response to the shape of the pattern. A potential applied between the pattern 12 and a semiconductor substrate 8 is regulated by accelerating means, thereby applying a suitable accelerating electric field to accelerate it to draw the pattern by the implanted ion layer 9 in the same manner as the conventional device.

82. 发明专利

JPS5967623A Processing method for semiconductor device 失效
标题翻译：半导体器件的处理方法
公开(公告)号：JPS5967623A
公开(公告)日：1984-04-17
申请号：JP17802582
申请日：1982-10-09
申请人： Mitsubishi Electric Corp
发明人： KOTANI HIDEO , TSUKAMOTO KATSUHIRO
IPC分类号： C23C16/04 , H01L21/205 , H01L21/268 , H01L21/31
CPC分类号： C23C16/047 , H01L21/02532 , H01L21/0262
摘要： PURPOSE:To manufacture the thin-film of a minute pattern easily in a short time by passing beams, through which a photochemical reaction is generated, through a transfer mask and radiating the beams on a semiconductor substrate in a reaction fluid atmosphere. CONSTITUTION:The inside of a vessel 4 is evacuated, and SiH4 gas and N2O gas are introduced as reactive gases. Mercury-arc lamp beams are emitted from a light source 6, and passed through a first optical system 7 and radiated on the mask 8. Incident beams passing through the mask 8 pass through a second optical system 9 and are adjusted, and transmit through a transparent plate 5 and are radiated on the semiconductor substrate 1 in the vessel 4 by a necessary pattern. The thin-film 10 by a silicon oxide film is formed through the photochemical reaction in a section, on which the beams are irradiated, on the substrate 1.
摘要翻译：目的：通过传递通过传递掩模的光束通过光束化学反应，并在反应液体气氛中将半导体衬底上的光束辐射，从而在短时间内容易地制造微小图案的薄膜。构成：将容器4的内部抽真空，引入SiH 4气体和N 2 O气体作为反应气体。水银弧光束从光源6发射，并通过第一光学系统7并辐射在掩模8上。通过掩模8的入射光束通过第二光学系统9并被调节并透过透明板5，并通过必要的图案照射在容器4中的半导体基板1上。通过氧化硅膜的薄膜10通过在其上照射光束的部分中的光化学反应形成在基板1上。

83. 发明专利

JPS58155738A SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS58155738A
公开(公告)日：1983-09-16
申请号：JP3850182
申请日：1982-03-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO
IPC分类号： H01L29/73 , H01L21/331 , H01L21/70 , H01L21/76 , H01L21/762
摘要： PURPOSE:To reduce the interval between elements making low temperature processing feasible minimizing the probable defective crystals by a method wherein, when a plurality of semiconductor elements formed on the surface of a semiconductor substrate are separated from one another, these elements are provided with grooves to be embedded with heat resistant high molecular material such as polyimido. CONSTITUTION:An N type embedded layer 3 is formed on P type Si substrate 1 by ion implantation and an N type layer 4 is epitaxially grown on the N type embedded layer 3. With the surface thinly oxidized, the region besides the base forming region is coated with resist film 9 to form two P type base regions 10 by means of implanting ion. Next the film 9 is removed to coat entire surface with an oxide film 17 opening specified holes diffusing and forming N type emitter region 12 in respective regions 10 and N type collector-contact region 13 between said regions 10. Then the groove 100 inserting into the substrate 1 is formed between the region 13 coating the exposed surface of the groove 100 with SiO2 film 21 utilizing P type channel-cut region 20 as underlayer to fill the groove 100 with heat resistant region 22 separating the elements.

84. 发明专利

JPS5886735A SEMICONDUCTOR DEVICE OF MULTILAYER STRUCTURE 失效
公开(公告)号：JPS5886735A
公开(公告)日：1983-05-24
申请号：JP18602381
申请日：1981-11-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO , WAKAMIYA WATARU , MIZUGUCHI KAZUO
IPC分类号： H01L27/00 , H01L21/60 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE:To facilitate the inter-layer connection of semiconductor devices and to miniaturize the same, by laminating the devices and arranging wiring pads in the peripheral part thereof in staged manner for every layer. CONSTITUTION:Semiconductor devices 8 and 9 are laminated through the intermediary of an appropriate insulation film, and each of wiring pads 10 and 11 is arranged in staged manner for every layer. Wirings 12 are laid between the pads. By this constitution, mutual wirings are facilitated and the whole device can be miniaturized.

85. 发明专利

JPS5886727A DIRECT PATTERN-DRAWING BY ELECTRON BEAM 失效
公开(公告)号：JPS5886727A
公开(公告)日：1983-05-24
申请号：JP18601581
申请日：1981-11-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO , MIZUGUCHI KAZUO , WAKAMIYA WATARU
IPC分类号： H01L21/027 , H01J37/317 , H01L21/30
摘要： PURPOSE:To draw a minute pattern on a thin film by applying simultaneously electron beams and beams with positive charge. CONSTITUTION:When a pattern is drawn directly by electron beams 6, beams with positive charge are applied simultaneously to a part 4 wherefrom a resist film 3 is desired to remove, whereby the resist mask 3, a thin film 2 on a substrate, and a semiconductor substrate 1 are neutralized electrically. Therefore, the resist 3 is not charged with electricity, and the electron beams reach the part 4 wherefrom the resist film 3 is desired to remove, without receiving an electric repulsive force, whereby the pattern can be drawn correctly.

86. 发明专利

JPS57149770A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57149770A
公开(公告)日：1982-09-16
申请号：JP3609681
申请日：1981-03-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： AKASAKA YOUICHI , TSUKAMOTO KATSUHIRO
IPC分类号： H01L21/76 , H01L21/027 , H01L21/265 , H01L21/331 , H01L21/763 , H01L29/08 , H01L29/10 , H01L29/73
摘要： PURPOSE:To prevent emitter.collector short-circuit even for walled emitter structure by forming an active base right below an emitter through an isolation oxide film edge which is the same type at the time of forming the emitter and an emitter opening section. CONSTITUTION:After forming a buried collector 2, n type epitaxial layer 4, oxide film 5 for isolating element, field dope layer 6, and collector wall 10 in a p type substrate 1, a resist mask 11 for base is formed and a base 13 is formed by implanting B ions 12. Next, an emitter opening section 14a, base opening section 14b, and collector opening section 14c are opened and the opening section 14b is covered by a resist mask 15 for emitter to implant Si ions and to form an emitter 19. Next, a resist mask 23 for base is provided to implant B ions. At that time, ion implantation is applied to the B ions by directly reflecting the shapes of the opening section 14a and the edge 17 of the film 5. Therefore, an active base 24 is formed right below the emitter 19 and the junction around the edge 17 becomes a similar figure. Therefore, the short-circuit between the emitter and the collector is prevented.

87. 发明专利

JPS5784167A Electrode wiring 失效
标题翻译：电极接线
公开(公告)号：JPS5784167A
公开(公告)日：1982-05-26
申请号：JP16110480
申请日：1980-11-14
申请人： Mitsubishi Electric Corp
发明人： TSUKAMOTO KATSUHIRO
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L29/43 , H01L29/45
CPC分类号： H01L29/456
摘要： PURPOSE:To suppress an occurrence of hillrock by using a layer providing a metal thin film containing Al or an Al alloy and substances excepting Al on the surface of said Al or Al alloy as a wiring layer for a semiconductor integrated circuit. CONSTITUTION:After an Al electrode 3 and an Al-Si alloy electrode 4 are deposited via an Si oxide film 2 on the surface of Si substrate 1, they are patterned to allow the first layer electrode wiring 5 to be formed, and after an interlayer insulating film 6 is deposited with a CVD method or a PD method to form the second electrode wiring. Hereby, it is possible to prevent the occurrence of hill/rock to improve yield of multilayer wiring largely.
摘要翻译：目的：通过使用在Al或Al合金的表面上提供含有Al或Al合金的金属薄膜和除了Al之外的物质的层作为半导体集成电路的布线层，来抑制山崩的发生。构成：在Si衬底1的表面上通过Si氧化物膜2沉积Al电极3和Al-Si合金电极4之后，对其进行构图以允许形成第一层电极配线5，并且在中间层用CVD法或PD法沉积绝缘膜6以形成第二电极布线。因此，可以防止山/岩的发生大大提高多层布线的产量。

88. 发明专利

JPS5640256A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5640256A
公开(公告)日：1981-04-16
申请号：JP11769979
申请日：1979-09-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO
IPC分类号： H01L21/76 , H01L21/316 , H01L21/331 , H01L21/762 , H01L29/73
摘要： PURPOSE:To prevent an increase in junction capacity across base and collector by surrounding the circumference of an n type buried collector on a p type substrate with a p layer wherein an n opitaxial layer is grown and the occurrence of a layer fault is controlled by selectively forming an oxide film on the upper part of the p layer around the buried layer. CONSTITUTION:An n buried collector 2 is nade on a p type Si substrate and a p layer 16 is made around the collector 2 by ion implantation. An n epitaxial layer is placed on the collector 2 and the p layer 16. And photo etching is applied as far as a predetermined depth by a two-layer mask of SiO2 4 and Si3N4 5 and an n layer 3b is formed. Next, selective ion implantation is applied to the n layer 3b to form a p layer 3c and an SiO2 isolating layer 7 is formed by oxidation in O2 at high temperature. Next, the mask 6 is removed. Then, a p base 9 and an n emitter 10 are provided in a normal process to form electrodes. In this composition, the interface between the isolating layer 7 and the p layer 16 will not be converted into n type because of the high concentration of the p layer 16 and the n layer 3b minimizes the amount of ion implantation. Therefore, a layer fault occurs infrequently. In this way, high speed operation will be attempted without increasing junction capacity across base and collector.

89. 发明专利

JPS5638464A FORMATION OF NITRIDE FILM 失效
公开(公告)号：JPS5638464A
公开(公告)日：1981-04-13
申请号：JP11340179
申请日：1979-09-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO
IPC分类号： C23C8/04 , C23C8/36 , C23C16/48 , H01L21/205 , H01L21/318
摘要： PURPOSE:To enable a nitriding process for forming a desired nitride film on a semiconductor surface by a method wherein a laser beam is irradiated on the surface of substrate such as semiconductor, etc. in N2 plasma to which a high frequency electromagnetic field is applied so that the surface reacts with N2 plasma. CONSTITUTION:The equipment consists of a laser oscillator 1, a lens 3, a plasma generation chamber 5, gas inlet 6, a high frequency electromagnetic field generator 9, vacuum discharge opening 7, etc. The substrate 4 such as semiconductor or metal is placed in the chamber 5 in nitrogen atmosphere, then a high frequency electromagnetic field is applied so that nitrogen plasma is generated. The laser beam is irradiated on the surface of the substrate 4 so that the substrate surface and N2 are reacted each other to form a normal semiconductor nitride film. Preheating of the substrate 4 by a heater 11 increases the thickness of nitride film when the same laser beam is used. The nitride film with a desired pattern can be formed by irradiating or scanning the laser beam on the substrate surface through a mask.

90. 发明专利

JPS5637633A FORMATION OF OXIDE FILM 失效
公开(公告)号：JPS5637633A
公开(公告)日：1981-04-11
申请号：JP11339979
申请日：1979-09-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUKAMOTO KATSUHIRO
IPC分类号： C23C8/28 , C23C8/10 , C23C8/12 , C23C8/36 , H01L21/31 , H01L21/316
摘要： PURPOSE:To directly obtain an oxide film at a low temperature by irradiating laser light beams on the surface of a semiconductor or a metal in O2 plasma. CONSTITUTION:With high output and high speed energy laser light beams irradiated on an Si substrate in O2 plasma, the laser light beams are transmitted in the inside as far as the wave length of the laser light beams and the temperature of a surface section instantly reach at about 1,500 deg.C. The laser light beams will react to O2 redical to generate SiO2 and an unexposed section will completely not be affected by the laser light beams. Furthermore, the O2 radical has a remarkably high reaction speed. With the intensity of the light beams increased, grown film thickness will be increased. In this method, an oxide film will directly be formed on the surface of a basic substance. Therefore, oxidation will be made at a low temperature and the accumulation of impurities or the abnormal increase in an interface electric field will not occur at the interface between the basic substance and oxide film.

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