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81. 发明专利

JPH08316462A METHOD OF GROWING SEMICONDUCTOR CRYSTAL AND DEVICE THEREOF 失效
公开(公告)号：JPH08316462A
公开(公告)日：1996-11-29
申请号：JP11572795
申请日：1995-05-15
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANABE MITSURU , INOUE KAORU , MATSUNO TOSHINOBU
IPC分类号： H01L29/205 , H01L21/20 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PURPOSE: To improve the mobility of electrons in the channel layer to be formed by the growth of crystal on a semiconductor layer. CONSTITUTION: After a buffer layer 11, an undoped layer 12 and a semiconductor layer 13 have been successively grown on a GaAs semiconductor substrate 10, an impurity-undoped GaAs channel layer 14 is crystal-grown on the semiconductor layer 13. As the electrons of two-dimensional electron gas are migrate to the opposite side of crystal growth direction and diffused into the semiconductor layer 13 because crystal is grown while electric field is being applied to crystal growth direction, the migration of electrons to the channel layer 14 is lessened, and a defect is not formed on the channel layer 14. Then, after an impurity-doped GaAs cap layer 15 has been formed on the channel layer 14, the cap layer 15 is recess-etched, and a gate electrode 16, a source electrode 17 and a drain electrode 18 are formed.

82. 发明专利

JPH07335220A MANUFACTURE OF NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY AND ITS POSITIVE ELECTRODE ACTIVE MATERIAL 失效
公开(公告)号：JPH07335220A
公开(公告)日：1995-12-22
申请号：JP13187194
申请日：1994-06-14
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： INOUE KAORU , OKAMURA KAZUHIRO , YAMAURA JUNICHI , KOBAYASHI SHIGEO
IPC分类号： H01M10/05 , H01M4/525 , H01M4/587 , H01M10/0566 , H01M4/58 , H01M4/02 , H01M10/40
摘要： PURPOSE:To improve the charging and discharging property with a large current by constituting this nonaqueous electrolytic secondary battery out of a positive electrode which uses nickel acid lithium specified in grain diameter as an active material, a negative electrode, which uses lithium or carbon material capable of staring or discharging lithium, or the like, and anonaqueous electrolyte. CONSTITUTION:A test pole 1 is made by adding acethylene black and graphite by 4 pts.wt. each and further fluoric resin binder by 7 pts.wt. and organic solvent by 150 pts.wt. to the 100 pts.wt. of nickel acid lithium, and making them into paste form, and applying the paste on an aluminum board. For a counter electrode 2 and a reference electrode 3, metallic lithium is used each. These electrodes are accommodated in a glass container 4, and using an electrolyte where lithium perchlorate is dissolved at a rate of 1mol/l to the equivalent mixed solvent between propylene carbonate and ethylene carbonate, a simplified cell is constituted, and discharge test is performed. As a result, accompanying the increase of a discharging current, the discharging property depends on the average grain diameter of primary grains, and 75% or more utilization factor can be obtained with 1mum or less.

83. 发明专利

JPH07245105A NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND POSITIVE ELECTRODE ACTIVE MATERIAL THEREOF 失效
公开(公告)号：JPH07245105A
公开(公告)日：1995-09-19
申请号：JP3436694
申请日：1994-03-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KOBAYASHI SHIGEO , YAMAURA JUNICHI , OKAMURA KAZUHIRO , INOUE KAORU , NAGAYAMA MASATOSHI
IPC分类号： H01M10/05 , H01M4/131 , H01M4/36 , H01M4/525 , H01M10/052 , H01M10/0566 , H01M4/58 , H01M4/02 , H01M10/40
摘要： PURPOSE:To provide a battery having excellent discharge performance after it is preserved at a high temperature by improving a positive electrode active material in a secondary battery using nonaqueous electrolyte. CONSTITUTION:A positive electrode active material where the whole surface or a part of a surface of nickel acid lithium is covered with lithium carbonate is used. Thereby, a contact surface of the nickel acid lithium and nonaqueous electrolyte is reduced, and formation of a film which is thought to be created when the electrolyte is decomposed and checks discharge reaction is eliminated, and the degradation of discharge performance after a battery is preserved at a high temperature can be improved.

84. 发明专利

JPH0737576A NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND MANUFACTURE OF ITS POSITIVE POLE ACTIVE MATERIAL 失效
公开(公告)号：JPH0737576A
公开(公告)日：1995-02-07
申请号：JP20266193
申请日：1993-07-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： INOUE KAORU , OKAMURA KAZUHIRO , YAMAURA JUNICHI , KOBAYASHI SHIGEO
IPC分类号： H01M4/133 , H01M4/134 , H01M4/36 , H01M4/505 , H01M4/525 , H01M4/587 , H01M10/05 , H01M10/052 , H01M10/0566 , H01M4/02 , H01M4/04 , H01M10/40
摘要： PURPOSE:To provide a positive pole active material for a nonaqueous electrolyte secondary battery excellent in charge/discharge efficiency with high capacity by smoothly promoting intercalate/deintercalate reaction of lithium. CONSTITUTION:In a spherical and almost spherical or elliptical secondary particle 2, a plate-shaped monocrystal grain 1, having a stratified structure of regularly laminating a thin piece, is collected, and in almost or all the plate-shaped crystal grains for constituting a surface part of this secondary particle 2, a stratified structural surface of inercalating/deintercalating lithium is exposed toward the outside of this secondary particle 2.

85. 发明专利

JPH06349495A NONAQUEOUS ELECTROLYTE SECONDARY BATTERY 失效
公开(公告)号：JPH06349495A
公开(公告)日：1994-12-22
申请号：JP13587093
申请日：1993-06-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKAMURA KAZUHIRO , INOUE KAORU , YAMAURA JUNICHI , KOBAYASHI SHIGEO
IPC分类号： H01M4/62 , H01M10/05 , H01M4/02 , H01M10/40
摘要： PURPOSE:To provide a nonaqueous electrolyte secondary battery causing no peeling on a positive electrode mix layer and having an excellent characteristic. CONSTITUTION:This nonaqueous electrolyte secondary battery is provided with a positive electrode having a positive electrode mix layer containing at least a positive electrode active material and a binder, a negative electrode, and a nonaqueous electrolyte. N-methoxymethyl nylon is used for the binder, and the content of the N-methoxymethyl nylon in the mix layer is set to 1-15wt.%. A polymer of crosslinked N-methoxymethyl nylon is preferably used for the binder of the positive electrode.

86. 发明专利

JPH0567771A SEMICONDUCTOR MULTILAYER FILM WAFER AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0567771A
公开(公告)日：1993-03-19
申请号：JP22570991
申请日：1991-09-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIROSE TAKASHI , MATSUNO TOSHINOBU , RIYUUJI AKIRA , INOUE KAORU
IPC分类号： H01L29/205 , H01L21/331 , H01L29/73 , H01L29/737
摘要： PURPOSE:To provide a manufacturing method for a semiconductor multilayer film wafer that has an accurate end point in an etch removal step for an emitter layer, and also for a hetero bipolar transistor with a semiconductor multilayer film wafer. CONSTITUTION:A multilayer film structured region 27 for mounting a hetero junction bipolar transistor and a colorimetric structured region 29 are formed on a GaAs substrate 21. The colorimetric structured region 29 can be discriminated from the multilayer film structured region 27 through the surface color thereof. The colorimetric structured region 29 is formed with a material having a film thickness not less than a distance from the surface of the multilayer film structured region 27 to the base layer and also having an inihibited band width almost equal to that of the base layer.

87. 发明专利

JPH04365333A HETERO JUNCTION FIELD EFFECT TRANSISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH04365333A
公开(公告)日：1992-12-17
申请号：JP14165291
申请日：1991-06-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUNO TOSHINOBU , INOUE KAORU , IKEDA YOSHITO
IPC分类号： H01L21/20 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PURPOSE:To reduce the leakage of a gate by forming SiO2 and an insulating film consisting of a silicon nitride film at the sidewall of a mesa, and forming the lead of a gate on this insulating film. CONSTITUTION:SiO2 is made all over the surface of a substrate, and a silicon nitride film is made thereon. Next, by reactive etching, the silicon nitride film on a mesa is removed, and it is etched into the condition that a thin sin. is left on the mesa and the substrate, and finally the SiO2 left on the mesa is removed by etching, and SiO2 and an insulating film consisting of a silicon nitride film are made on the sidewall of the mesa. Next, a source electrode 14 and a drain electrode 15 are made on an n-type InGaAs cap layer. Next, the n-type InGaAs cap layer is removed, and then a gate electrode 11, a gate lead 12, and a gate pad are made. Hereby, the leakage of the gate can be reduced.

88. 发明专利

JPH03125436A HETERO STRUCTURE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03125436A
公开(公告)日：1991-05-28
申请号：JP26320889
申请日：1989-10-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： INOUE KAORU , JII SHII ARUMAN , MATSUNO TOSHINOBU
IPC分类号： H01L29/201 , H01L21/20 , H01L21/203 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PURPOSE:To remarkably lower remaining carrier concentration, to suppress a board leakage current, to facilitate isolation of an element and to improve pinch-off characteristic of a FET by employing an Inx(GayAl1-y)1-xAs four- element mixed crystal buffer layer having a large energy band gap. CONSTITUTION:An InAs composition X of an Inx(GayAl1-y)1-xAs buffer layer 3 is '0' at the side of a GaAs substrate 1, and a value Z substantially lattice- matching to a non-doped InAlAs barrier layer 4 at the layer 4 side, and substantially linearly varied from '0' to the Z. The change rate of the X largely affects influence to the crystallinity of a non-doped InGaAs channel layer 5 of an object, and is necessary to be set to a change rate of 0.15 per 100nm of the thickness of the buffer layer, i.e., 1.5X10 /nm or less. Normally, in the case of Z=0.5, the thickness of the buffer layer of 800nm is used, i.e., -6X10 /nm of change rate is set. On the other hand, the value of Y can be set to an arbitrary value of 0 to 1 since the lattice mismatching of GaAlAs to GaAs is small in the degree to be ignored.

89. 发明专利

JPH0352238A MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0352238A
公开(公告)日：1991-03-06
申请号：JP18615789
申请日：1989-07-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WATANABE KOJI , INOUE KAORU
IPC分类号： H01L29/812 , H01L21/338
摘要： PURPOSE:To obtain a compound semiconductor device wherein an etching groove is not formed and the characteristics are stabilized by specifying the thickness of a silicon oxide film, and performing diffusing heat treatment in a furnace of hydrogen atmosphere at a specified temperature. CONSTITUTION:An SiO2 film 6 having a thickness of 300Angstrom or less is formed by a CVD method and treated at 820 deg.C in a diffusion furnace containing hydrogen, so as to suppress etching which can occur at the boundary between a WSi gate and the SiO2 film 6 due to annealing. Therefore, the reaction of SiO2 to form Ga2O3 is retarded, which is proportional to the thickness of the SiO2 film 6. Etching of a semi-insulating gallium arsenide substrate 1 can be prevented. Thus, a compound semiconductor device having stable characteristics is obtained.

90. 发明专利

JPH02213136A GAAS INTEGRATED CIRCUIT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02213136A
公开(公告)日：1990-08-24
申请号：JP3395589
申请日：1989-02-14
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： INOUE KAORU
IPC分类号： H01L27/095 , H01L21/314 , H01L21/318
摘要： PURPOSE:To reduce reciprocal action between the elements of a GaAs integrated circuit or leakage currents so as to stabilize the operation of the GaAs integrated circuit by covering an semiinsulating GaAs substrate with an insulating film, which is nitrified in plasma of NH3, excluding the region of an n-type island for element formation, which is formed at one main face of the semiinsulating GaAs substrate. CONSTITUTION:This has such structure that the semiinsulating GaAs substrate 1 is covered with an insulating substrate 1, which is nitrified in plasma of NH3, excluding the region of an n-type island 6 for element formation, which is formed at the main face of the semiinsulating GaAs substrate 1. Moreover, one main face of the semiinsulating GaAs substrate 1 is nitrified in the plasma of NH3 so as to form an insulating film 2, and after removing the specified area of the insulating film 2 selectively, the ions of n-type impurities 5 are implanted into the specified region. Next, after forming a gate electrode 7 astride said insulating film 2 and said specified region, an n region 9 is formed selectively by ion implantation, and further through a process of annealing it in AsH3 atmosphere after formation of an SiO2 film 8 on the whole face, a GaAs integrated circuit is manufactured.

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