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    • 82. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS61231736A
    • 1986-10-16
    • JP7303585
    • 1985-04-05
    • MITSUBISHI ELECTRIC CORP
    • MACHIDA KAZUMICHIHIROTA SANEYASUSHIBUYA YOKOSHIMOTOMAI MASAAKI
    • H01L21/607H01L21/60
    • PURPOSE:To improve the bonding property of the metal wire to the lead by a method wherein, before the wire-bonding process, the pressing body provided with the planar or spherical pressing surface on its point is pressed to the bonding areas of the lead and ultrasonic vibrations are applied to the pressing body. CONSTITUTION:Before the wire-bonding process, the planar pressing surface 8a of a pressing bar 8 is pressed to the bonding areas of a lead 6 and ultrasonic vibrations of 15kHz-100kHz are applied to the pressing bar 8 in the pressed state. Whereupon the oxide film on the surface of the lead 6 is destroyed by the action of the ultrasonic vibrations applied to the pressing bar 8 and the destroyed oxide film 6a is extruded on the side of the outer periphery of the pressing surface 8a, that is, toward outside of the bonding areas of the lead 6. As the bonding areas of the lead 6 are cleaned in such a way, the ultrasonic application to the pressing bar 8 is stopped thereafter and after the pressing bar 8 is made to shift upward, a wire-bonding is performed using a metal wire 7 in the same way as the conventional one. As a result, the bonding property of the metal wire to the lead can be significantly improved and the amount used of noble metal materials, such as gold and silver, can be significantly reduced.
    • 83. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS61231735A
    • 1986-10-16
    • JP7303485
    • 1985-04-05
    • MITSUBISHI ELECTRIC CORP
    • MACHIDA KAZUMICHIHIROTA SANEYASUSHIBUYA YOKOSHIMOTOMAI MASAAKI
    • H01L21/60
    • PURPOSE:To improve the bonding property of the metal wire to the lead by a method wherein, before the wire-bonding process, by pressing body provided with the spherical pressing surface on its point is pressed to the bonding areas of the lead and the pressing body is made to spin. CONSTITUTION:Before the wire-bonding process, the spherical pressing surface 8a of a pressing bar 8 is pressed to the bonding areas of a lead 6 with the prescribed load and the pressing bar 8 is made to spin within a time of 1sec or less, for example, in the pressed state. Whereupon the oxide film on the surface of the lead 6 is destroyed by the spinning of the pressing bar 8 and the destroyed oxide film 6a is extruded on the side of the outer periphery of the pressing surface 8a, that is, toward outside of the bonding areas of the lead 6. As the bonding areas of the lead 6 are cleaned in such a way, the spinning and pressing of the pressing bar 8 are stopped thereafter and after the pressing bar 8 is made to shift upward, a wire-bonding is performed using a metal wire 7 in the same way as the conventional one. As a result, the bonding property of the metal wire 7 to the lead 6 can be significantly improved.
    • 84. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS61231732A
    • 1986-10-16
    • JP7303185
    • 1985-04-05
    • MITSUBISHI ELECTRIC CORP
    • MACHIDA KAZUMICHISHIBUYA YOKOHIROTA SANEYASUOMAE SEIZO
    • H01L21/607H01L21/60
    • PURPOSE:To enable to obtain a sufficiently high connection strength in the bonding of the lead and the metal wires of a semiconductor device by a method wherein the device is constituted in such a structure that a lead having its bonding areas provided with grooves therein is used as the lead and the metal wires are bonded on the inner surfaces of the grooves of the lead. CONSTITUTION:The lead with its surface, wherein plural V-shaped grooves 11a are formed, is used as a lead 11; the direction of a metal wire 10 is made to coincide with the extended direction of the grooves 11a of the lead 11; the direction B of ultrasonic vibrations to be applied is made to coincide with the direction of the metal wire 10; and the metal wire 10 is bonded on the inner surfaces of the grooves 11a of the lead 11 by an ultrasonic wave combined thermocompression bonding system. Whereupon the metal wire 10 is bonded on the inner surfaces of the groves 11a with a wide bond area to the inner surfaces of the grooves 11a despite the metal wire 10 itself is not deformed so much, and moreover, a neck part 14 is hardly deformed, leaving the configuration of the wire 10 intact and the wire can be bonded. Accordingly, a high bonding strength is obtained, and furthermore, as the neck part 14 also does not become thinner, the strength of the neck is not made to reduce so much. As a result, sufficiently high connection strength can be secured.
    • 85. 发明专利
    • FORMATION OF WIRE BONDING BALL
    • JPS61208229A
    • 1986-09-16
    • JP4978585
    • 1985-03-13
    • MITSUBISHI ELECTRIC CORP
    • HIROTA SANEYASUMACHIDA KAZUMICHI
    • H01L21/60H01R43/02
    • PURPOSE:To replace gold with other metal such as copper while insuring weldability and neck strength of a ball by a method wherein an alternating voltage which gives larger energy when a metal wire is positive than when the wire is negative is applied between the metal wire and a discharge electrode. CONSTITUTION:An alternating voltage is applied between a metal wire 1 and a discharge electrode 2. If the value V1 of the voltage applied when the metal wire 1 is positive is larger than the value V2 of the voltage applied when the metal wire 1 is negative, an arc 3 is formed between the tip of the metal wire 1 and the discharge electrode 2 and concentrated heat is given to the tip of the wire 1. On the other hand, when the wire is negative, the arc 3 is formed extending to the top part of the metal wire 1 and the heat is given to the wire through the surface skin of the wire surface. With this process, the heat supply phenomenon is repeated so that the tip of the wire 1 is turned into a ball 28 the main part of which has perfect melting hysteresis and little unmelted part is left at the neck part 28a.
    • 86. 发明专利
    • BALL FORMING METHOD FOR WIRE BONDING
    • JPS61199645A
    • 1986-09-04
    • JP4062485
    • 1985-03-01
    • MITSUBISHI ELECTRIC CORP
    • HIROTA SANEYASUMACHIDA KAZUMICHI
    • H01L21/60H01R43/02
    • PURPOSE:To enable to form the titled ball which received a complete melt hysteresis to internal part without leaving a non-melted part at the tip of a wire by a method wherein the plus terminal is set on a wire and the minus terminal is set on a discharge electrode, and high voltage is applied between the wire and the discharge electrode. CONSTITUTION:Heat is applied to the tip part of a wire 1 and the fused part 6 is limited to the tip part only of the wire 1 by giving the plus terminal on the wire 1 consisting of aluminum, copper or palladium or the alloy of these metals and the minus terminal is given to a discharge electrode, and the fused part 8 increases its cubic volume while the fused part 8 is being maintained in a complete globular shape. In this case, it is necessary that an active gas atmosphere such as argon and the like is formed on a discharge region for the purpose of preventing oxidation subjected to when the tip of the wire is fused. At this time, the current value of discharge is properly selected from the range of 30-200mum and the discharge period is selected from the range of 1-10msec for the purpose of forming the ball 8 of two or three times of the diameter of the wire 1 in a stabilized manner.