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    • 6. 发明专利
    • PARTS FOR OPTICAL COMMUNICATION AND ITS MANUFACTURE
    • JPS6352109A
    • 1988-03-05
    • JP19668086
    • 1986-08-22
    • MITSUBISHI ELECTRIC CORP
    • KASHIBA YOSHIHIROSAITO TAKASHIMACHIDA KAZUMICHI
    • G02B6/42
    • PURPOSE:To easily obtain parts for optical communication having excellent transfer characteristics, by providing a base section which supports an optical fiber under a fixed condition, supporting table having an adjusting section, and supporting member which supports the adjusting section under a fixed condition. CONSTITUTION:Solder 3 is melted on a soldering base section 5b and the positions of an optical fiber 1 and luminous element 2 are adjusted by means of a tweezers-like jig fitted to an XY-table, etc. Then the position adjusting jig is removed after the solder 3 solidifies. Thereafter, moving adjustment is performed by holding the adjusting section 5c of a supporting table 5, but the soldering base section 5b is moved by using a coupled section 5d which is weakened in strength as a fulcrum since the supporting table 5 is fixed to a base by means of a fixed section 5a. The distance from the light receiving end of the optical fiber 1 to the fulcrum is short when it is compared with the distance from the adjusting section 5c of the supporting table 5 to the fulcrum and the movement of the adjusting section 5c appears on the light receiving axis of the optical fiber 1 after contraction.
    • 7. 发明专利
    • CAPILLARY CHIP FOR WIRE BONDING
    • JPS62256447A
    • 1987-11-09
    • JP10060686
    • 1986-04-28
    • MITSUBISHI ELECTRIC CORP
    • SUGIMURA TOSHIHARUHIROTA SANEYASUMACHIDA KAZUMICHI
    • H01L21/60
    • PURPOSE:To provide wire bonding in a good junction state even if the distance between adjacent electrodes is small by a method wherein the title chip is provided with a ball bonding part and a stitch bonding part with the stitch bonding surface thereof partly notched. CONSTITUTION:When an electrode 3 of a miniaturized semiconductor chip 2 and a bonding area of copper alloy lead 4 are connected by a copper wire 1 with thermal pressure fixing process jointly using ultrasonic, the direction of copper wire 1 interconnecting the electrode 3 on semiconductor chip to the lead 4 is limited to the ranged of A to A and B to B. Therefore, the title chip can be contracted into the shape comprising a ball bonding part ball bonding one end of copper wire 1 onto the electrode 3 and stitch bonding part encircling the ball bonding part and stitch bonding the copper wire 1 only in the interconnecting direction within the specified ranges on the lead 4. Through these procedures, the distance between adjacent electrodes ball-bonded in conformity to the shape of end pressurized part of contracted capillary chip 5 can be shortened.
    • 8. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS62174930A
    • 1987-07-31
    • JP1734986
    • 1986-01-28
    • MITSUBISHI ELECTRIC CORP
    • HIROTA SANEYASUMACHIDA KAZUMICHI
    • H01L21/607H01L21/60
    • PURPOSE:To obtain the semiconductor derive in which a metal wire and an electrode can be bonded in an excellent manner without inflicting damage on the electrode and a semiconductor chip by a method wherein a thin film, the quality of which is controlled in such a manner that the depth of concavity will be formed in the prescribed limits when the prescribed pressure is applied to the pure copper ball of the prescribed diameter, is used as the electrole provided on the semiconductor chip. CONSTITUTION:The quality of the electrode 13 on a semiconductor chip 2 is controlled under various conditions, and using a capillary 5, a pure copper ball 14 of 70-75mum in diameter is pressed to said electrode 13 under the following conditions: at the temperature of 350 deg.C, at the load of 150gf, at the frequency of supersonic oscillation of 60KHz, and at the half amplitude of 0.07-0.14mum. The amount of deformation, the depth of a concavity in other words, of the electrode 13 is measured, the film quality for bondability is evaluated based on the judgement indicating whether the depth is in the range of 0.1-0.6mum, and the condition of quality control is established. The quality of the electrode 13 on the semiconductor chip 2 is controlled under the established condition of quality control, the ball 10a of a copper wire 10 is bonded to the electrode 13 on the semiconductor chip 2 using a capillary chip 5 and supersonic oscillation, and at the same time, the other end of the copper wire 10 is stitch-bonded to a lead 4.