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1. 发明专利

JPH0452618B2 失效
公开(公告)号：JPH0452618B2
公开(公告)日：1992-08-24
申请号：JP7303685
申请日：1985-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIROTA MIHO , MACHIDA KAZUMICHI , SHIBUYA YOKO , SHIMOTOMAI MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To secure a good bonding property of the fine metal wire to the lead wire by a method wherein, before the process of bonding of the fine metal wire and the lead, the bonding areas of the lead are locally softened by applying heat. CONSTITUTION:Firstly, a laser beam 7 is irradiated on the bonding areas 14a of a copper alloy lead 14, the bonding areas 14a are heated and after the bonding areas 14a of the copper alloy lead 14 are softened, an electrode 3 on a semiconductor chip 2 and the bonding areas 14a of the copper alloy lead 14 are connected using a copper wire 10 by an ultrasonic wave combined thermocompression bonding system, for example. The copper alloy lead 14 is already subjected to a work hardening hystresis in addition to that a metal element is already added to the composition thereof in order to secure the mechanical strength thereof, the hardness thereof is relatively higher than that of the copper wire 10 and the copper alloy lead 14 is hard to be plastically deformed at the time of bonding in the state intact. Therefore, by irradiating the laser beam 7 on the bonding areas of the copper alloy lead 14, the bonding areas only are locally softened while the mechanical strength is sufficiently kept as the lead 14.

2. 发明专利

JPS61231737A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61231737A
公开(公告)日：1986-10-16
申请号：JP7303685
申请日：1985-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIROTA SANEYASU , MACHIDA KAZUMICHI , SHIBUYA YOKO , SHIMOTOMAI MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To secure a good bonding property of the fine metal wire to the lead wire by a method wherein, before the process of bonding of the fine metal wire and the lead, the bonding areas of the lead are locally softened by applying heat. CONSTITUTION:Firstly, a laser beam 7 is irradiated on the bonding areas 14a of a copper alloy lead 14, the bonding areas 14a are heated and after the bonding areas 14a of the copper alloy lead 14 are softened, an electrode 3 on a semiconductor chip 2 and the bonding areas 14a of the copper alloy lead 14 are connected using a copper wire 10 by an ultrasonic wave combined thermocompression bonding system, for example. The copper alloy lead 14 is already subjected to a work hardening hystresis in addition to that a metal element is already added to the composition thereof in order to secure the mechanical strength thereof, the hardness thereof is relatively higher than that of the copper wire 10 and the copper alloy lead 14 is hard to be plastically deformed at the time of bonding in the state intact. Therefore, by irradiating the laser beam 7 on the bonding areas of the copper alloy lead 14, the bonding areas only are locally softened while the mechanical strength is sufficiently kept as the lead 14.

3. 发明专利

JPS61231736A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61231736A
公开(公告)日：1986-10-16
申请号：JP7303585
申请日：1985-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MACHIDA KAZUMICHI , HIROTA SANEYASU , SHIBUYA YOKO , SHIMOTOMAI MASAAKI
IPC分类号： H01L21/607 , H01L21/60
摘要： PURPOSE:To improve the bonding property of the metal wire to the lead by a method wherein, before the wire-bonding process, the pressing body provided with the planar or spherical pressing surface on its point is pressed to the bonding areas of the lead and ultrasonic vibrations are applied to the pressing body. CONSTITUTION:Before the wire-bonding process, the planar pressing surface 8a of a pressing bar 8 is pressed to the bonding areas of a lead 6 and ultrasonic vibrations of 15kHz-100kHz are applied to the pressing bar 8 in the pressed state. Whereupon the oxide film on the surface of the lead 6 is destroyed by the action of the ultrasonic vibrations applied to the pressing bar 8 and the destroyed oxide film 6a is extruded on the side of the outer periphery of the pressing surface 8a, that is, toward outside of the bonding areas of the lead 6. As the bonding areas of the lead 6 are cleaned in such a way, the ultrasonic application to the pressing bar 8 is stopped thereafter and after the pressing bar 8 is made to shift upward, a wire-bonding is performed using a metal wire 7 in the same way as the conventional one. As a result, the bonding property of the metal wire to the lead can be significantly improved and the amount used of noble metal materials, such as gold and silver, can be significantly reduced.

4. 发明专利

JPS61231735A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61231735A
公开(公告)日：1986-10-16
申请号：JP7303485
申请日：1985-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MACHIDA KAZUMICHI , HIROTA SANEYASU , SHIBUYA YOKO , SHIMOTOMAI MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To improve the bonding property of the metal wire to the lead by a method wherein, before the wire-bonding process, by pressing body provided with the spherical pressing surface on its point is pressed to the bonding areas of the lead and the pressing body is made to spin. CONSTITUTION:Before the wire-bonding process, the spherical pressing surface 8a of a pressing bar 8 is pressed to the bonding areas of a lead 6 with the prescribed load and the pressing bar 8 is made to spin within a time of 1sec or less, for example, in the pressed state. Whereupon the oxide film on the surface of the lead 6 is destroyed by the spinning of the pressing bar 8 and the destroyed oxide film 6a is extruded on the side of the outer periphery of the pressing surface 8a, that is, toward outside of the bonding areas of the lead 6. As the bonding areas of the lead 6 are cleaned in such a way, the spinning and pressing of the pressing bar 8 are stopped thereafter and after the pressing bar 8 is made to shift upward, a wire-bonding is performed using a metal wire 7 in the same way as the conventional one. As a result, the bonding property of the metal wire 7 to the lead 6 can be significantly improved.

5. 发明专利

JPS61231732A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61231732A
公开(公告)日：1986-10-16
申请号：JP7303185
申请日：1985-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MACHIDA KAZUMICHI , SHIBUYA YOKO , HIROTA SANEYASU , OMAE SEIZO
IPC分类号： H01L21/607 , H01L21/60
摘要： PURPOSE:To enable to obtain a sufficiently high connection strength in the bonding of the lead and the metal wires of a semiconductor device by a method wherein the device is constituted in such a structure that a lead having its bonding areas provided with grooves therein is used as the lead and the metal wires are bonded on the inner surfaces of the grooves of the lead. CONSTITUTION:The lead with its surface, wherein plural V-shaped grooves 11a are formed, is used as a lead 11; the direction of a metal wire 10 is made to coincide with the extended direction of the grooves 11a of the lead 11; the direction B of ultrasonic vibrations to be applied is made to coincide with the direction of the metal wire 10; and the metal wire 10 is bonded on the inner surfaces of the grooves 11a of the lead 11 by an ultrasonic wave combined thermocompression bonding system. Whereupon the metal wire 10 is bonded on the inner surfaces of the groves 11a with a wide bond area to the inner surfaces of the grooves 11a despite the metal wire 10 itself is not deformed so much, and moreover, a neck part 14 is hardly deformed, leaving the configuration of the wire 10 intact and the wire can be bonded. Accordingly, a high bonding strength is obtained, and furthermore, as the neck part 14 also does not become thinner, the strength of the neck is not made to reduce so much. As a result, sufficiently high connection strength can be secured.

6. 发明专利

JPS62136837A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62136837A
公开(公告)日：1987-06-19
申请号：JP27864885
申请日：1985-12-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIROTA SANEYASU , MACHIDA KAZUMICHI , HASHIMOTO YOICHI , SHIBUYA YOKO , SHIMOTOMAI MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To join a metallic wire and an electrode excellently without damaging the electrode and a semiconductor chip by forming the electrode onto the semiconductor chip through a cluster ion-beam evaporation method and bringing the semiconductor chip to a high temperature in the first half and to a low temperature in the second half on evaporation. CONSTITUTION:The temperature of a semiconductor chip 2 is elevated to a temperature T1, an aluminum film is evaporated onto the semiconductor chip 2 through a cluster ion-beam evaporation method during the time t1, the semiconductor chip 2 is cooled at a temperature T2 lower than the temperature T1 after the time t1 passes, and an aluminum film is evaporated onto the semiconductor chip 2 through the cluster ion-beam evaporation method during the time t2. Accordingly, the ball 10a of a copper wire 10 is ball-bonded with an aluminum electrode 13 on the semiconductor chip 2 through a wire bonding method the same as conventional methods after the desired aluminum electrode 13 is shaped onto the semiconductor chip 2 while the another side of the copper wire 10 is switch-bonded with a lead 4. Cooling velocity at a time when the semiconductor chip 2 is cooled to the temperature T2 from the temperature T1 may be set at an arbitrary value at that time.

7. 发明专利

JPS61231734A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61231734A
公开(公告)日：1986-10-16
申请号：JP7303385
申请日：1985-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： HIROTA SANEYASU , MACHIDA KAZUMICHI , SHIBUYA YOKO
IPC分类号： H01L21/60
摘要： PURPOSE:To secure a good bonding property of the fine metal wires to the leads by a method wherein, before the process of bonding of the fine metal wires and the leads, a laser beam is irradiated on the irradiating area in a state that the irradiating area is being interrupted from the air and the bonding areas of each lead are locally softened by applying heat. CONSTITUTION:Before the wire-bonding process, leads 1 are placed on a processing station 5, this processing station 5 is carried in a container 4 from a carrying-in port 4a, the carrying-in port 4a and a carrying-out port 4b are blocked up, the air in the container 4 is exhausted from an exhaust port 4c, a laser beam 3 from a laser oscillation gun 2 is irradiated on the bonding areas of each lead 1 on the processing station 5 through a glass transmitting window 4d in a state that the degree of vacuum in the container 4 is set at 10 -10 torrs and the said bonding areas are softened by applying heat. The leads 1 are ones to be connected with the electrodes on a semiconductor chip using copper wires by an ultrasonic wave combined thermocompression bonding system, for example. By this way, a good bonding property of the fine metal wires to the leads can be secured.

8. 发明专利

JPS61231733A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61231733A
公开(公告)日：1986-10-16
申请号：JP7303285
申请日：1985-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MACHIDA KAZUMICHI , HIROTA SANEYASU , SHIBUYA YOKO , OMAE SEIZO
IPC分类号： H01L21/603 , H01L21/60 , H01L21/607
摘要： PURPOSE:To enable to obtain a sufficiently high connection strength by a method wherein the direction of ultrasonic vibrations to be applied is made to coincide with the extended direction of the rolled scars on the surface of the lead. CONSTITUTION:A metal wire 1 is bonded with a lead 2 in the same way as the conventional one by an ultrasonic wave combined thermocompression bonding system, yet at that time, the direction A of ultrasonic vibrations to be applied is made to coincide with the extended direction of rolled scars 2a on the surface of the lead 2. Whereupon a smooth slide is generated between the metal wire 1 and the lead 2 by the action of the ultrasonic vibrations and a dew condensation phenomenon of both is promoted. The ultrasonic vibrations act efficiently on the wire 1 in such a way, the wire 1 is never deformed so much and a bonding of the wire 1 and the lead 2 is performed. Accordingly, the desired bonding strength can be secured, and furthermore, as the amount of deformation of the wire is small, the amount of deformation of the neck part is also small and the strength of the neck can be sufficiently secured. As a result, a sufficiently high connection strength can be secured and the reliability of the connection is improved.

9. 发明专利

JPS6188537A Lead of semiconductor device 失效
标题翻译：半导体器件领导
公开(公告)号：JPS6188537A
公开(公告)日：1986-05-06
申请号：JP21000784
申请日：1984-10-05
申请人： Mitsubishi Electric Corp
发明人： HIROTA SANEYASU , SHIBUYA YOKO
IPC分类号： H01L21/60 , H01L21/607
CPC分类号： H01L2224/05556 , H01L2224/05557 , H01L2224/05624 , H01L2224/45 , H01L2224/45015 , H01L2224/45147 , H01L2224/48 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/48458 , H01L2224/48465 , H01L2224/48799 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/8501 , H01L2224/85181 , H01L2224/85205 , H01L2224/85385 , H01L2924/01013 , H01L2924/01029 , H01L2924/01082 , H01L2924/20752 , H01L2924/00014 , H01L2924/00 , H01L2224/48824 , H01L2924/00012
摘要： PURPOSE:To enhance junction strength through elimination of oxide film being generated at the surface of wire during connection by forming previously a plurality of sawtooth grooves having specified width and depth at the surface of lead on the occasion of connecting A electrode provided on a semiconductor chip to a copper alloy lead with copper wire. CONSTITUTION:A semiconductor chip 2 is loaded on a die pad 1 and an Al electrode 3 provided on the surface is connected to the surface of copper alloy lead 14 with a copper wire 6 having the diameter of about 25mum. Namely, the region other than the connecting portion of lead 14 is held with a lead holder 7, a wire 6 allowing a capillary chip 5 to pass through is first fixed on the electrode 3, the chip 5 is then moved and is connected to the led 14. In this structure, a plurality of sawtooth grooves in the width of about 1mum and depth of about 1.0-1.5mum are continuously provided at the surface of connecting portion of lead 14 and when the wire 6 is connected through ultrasonic vibration of chip 5, the surface oxide of wire 6 is removed simultaneously.
摘要翻译：目的：通过在连接期间消除在电线表面产生的氧化膜，从而通过在连接设置在半导体芯片上的A电极的情况下预先形成在引线的表面处具有指定宽度和深度的多个锯齿槽来增强结强度铜铜合金线。构成：在芯片焊盘1上装载半导体芯片2，将表面设置的Al电极3用直径约25μm的铜线6连接在铜合金引线14的表面。也就是说，除引线14的连接部分以外的区域被保持在引线架7上，允许毛细管芯片5通过的布线6首先被固定在电极3上，然后芯片5移动并连接到在这种结构中，在引线14的连接部分的表面处连续地设置宽度为约1μm，深度为约1.0-1.5μm的多个锯齿形槽，并且当线6通过芯片的超声波振动连接时如图5所示，线6的表面氧化物被同时去除。

10. 发明专利

JPS62136842A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62136842A
公开(公告)日：1987-06-19
申请号：JP27865385
申请日：1985-12-10
申请人： MITSUBISHI ELECTRIC CORP
发明人： MACHIDA KAZUMICHI , HIROTA SANEYASU , SHIBUYA YOKO , SHIMOTOMAI MASAAKI
IPC分类号： H01L21/60
摘要： PURPOSE:To improve the joining properties of both a wire and a surface to be joined of an electrode, and to apply a base-metal wire such as copper as the wire by irradiating at least one of the wire or the surface to be joined of the electrode by excitation beams before a wire bonding process of during said process. CONSTITUTION:An aluminum electrode 3 is formed onto a semiconductor chip 2. A surface to be joined as the surface of the aluminum electrode 3 is irradiated by laser beams 12, thus activating the surface. High voltage is applied between a copper wire 10 and a discharge electrode in wire bonding. Consequently, discharge is generated between the tip section of the wire 10 and the discharge electrode and an arc is shaped, the tip section of the wire 10 is given heat and said tip section is melted, and the volume of the melting section is increased gradually while a globular shape is kept. The tip section of the wire and the discharge electrode are joined through the same method as conventional methods.

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