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71. 发明专利

JP4322722B2 Measuring method using a scanning probe microscope and the microscope 有权
公开(公告)号：JP4322722B2
公开(公告)日：2009-09-02
申请号：JP2004094101
申请日：2004-03-29
申请人：エスアイアイ・ナノテクノロジー株式会社
发明人：和徳安藤 , 将史渡邉
IPC分类号： G01Q30/20 , G01B5/28 , G01Q20/02 , G01Q30/08 , G01Q30/10 , G01Q30/12 , G01Q30/16 , G01Q30/18
CPC分类号： G01Q20/02 , G01Q30/12 , G01Q80/00

72. 发明专利

JP3939128B2 Scanning probe microscope 有权
公开(公告)号：JP3939128B2
公开(公告)日：2007-07-04
申请号：JP2001334637
申请日：2001-10-31
申请人：エスアイアイ・ナノテクノロジー株式会社
发明人：信明大久保 , 和徳安藤 , 良晃鹿倉 , 亜三子齋藤
IPC分类号： G01N19/00 , G01Q30/10 , G01Q30/12 , G01Q30/16 , G01Q40/02 , G01Q60/24 , G01Q60/34

73. 发明专利

JP3926638B2 Scanning probe microscope 有权
公开(公告)号：JP3926638B2
公开(公告)日：2007-06-06
申请号：JP2002025633
申请日：2002-02-01
申请人：エスアイアイ・ナノテクノロジー株式会社
发明人：信明大久保 , 和徳安藤 , 良晃鹿倉 , 亜三子齋藤
IPC分类号： G01B21/30 , G01N19/00 , G01N19/02 , G01N19/04 , G01Q30/04 , G01Q30/08 , G01Q30/10 , G01Q30/20 , G01Q60/26 , G01Q60/28 , G01Q60/34

74. 发明专利

JP3857581B2 Scanning probe microscope 有权
公开(公告)号：JP3857581B2
公开(公告)日：2006-12-13
申请号：JP2001373647
申请日：2001-12-07
申请人：エスアイアイ・ナノテクノロジー株式会社
发明人：和徳安藤 , 良晃鹿倉 , 亜三子齋藤
IPC分类号： G01B21/30 , G01N19/00 , G01N19/02 , G01N19/04 , G01N25/16 , G01Q10/04 , G01Q30/10 , G01Q60/26 , G01Q60/34

75. 发明专利

JP2006234500A Surface data measuring instrument and surface data measuring method 有权
标题翻译：表面数据测量仪器和表面数据测量方法
公开(公告)号：JP2006234500A
公开(公告)日：2006-09-07
申请号：JP2005047662
申请日：2005-02-23
申请人： Sii Nanotechnology Inc , エスアイアイ・ナノテクノロジー株式会社
发明人： IWASA MASAYUKI , ANDO KAZUNORI , WATANABE MASASHI
IPC分类号： G01B7/34 , G01B21/30 , G01Q30/08 , G01Q30/10 , G01Q30/12 , G01Q30/16 , G01Q30/20 , G01Q60/10
摘要： PROBLEM TO BE SOLVED: To provide a measuring instrument capable of measuring the shape data or physical property data of a sample under an environment controlled from the installation of its sample to its measurement without exposing the sample to the atmosphere. SOLUTION: This surface data measuring instrument includes a cantilever 6 having a microprobe provided to its leading end, a plate 2 for holding the cantilever 6, a sample fixing stand 4 for installing the sample 7, a load locking chamber 1 comprising a housing 3 or the like kept airtight, a displacement detecting mechanism 8 for detecting the displacement of the cantilever 6, a fine adjustment mechanism 18 being a sample moving mechanism for moving the sample 7, an XY coarse adjustment mechanism 19, a hermetically sealed container 17 provided with a Z coarse adjustment mechanism 20, vacuum exhaust mechanism 21 for evacuating the hermetically sealed container 17 and a gas introducing mechanism 22. The load locking chamber 1 is attached to the hermetically sealed container 17. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在将样品安装到其测量的环境下测量样品的形状数据或物理性质数据而不将样品暴露在大气中的测量仪器。解决方案：该表面数据测量仪器包括：悬臂6，其具有设置在其前端的微探针，用于保持悬臂6的板2，用于安装样品7的样品固定架4，负载锁定室1，外壳3等保持气密的位置检测机构8，用于检测悬臂6的位移的位移检测机构8，作为移动试样7的样品移动机构的微调机构18，XY粗调机构19，气密密封容器17 设有Z粗调机构20，用于抽真空密封容器17的真空排气机构21和气体导入机构22.负载锁定室1安装在密闭容器17上。（C）版权所有（C）2006 ，JPO＆NCIPI

76. 发明专利

JP3781579B2 Holding device of the coolant tank 有权
公开(公告)号：JP3781579B2
公开(公告)日：2006-05-31
申请号：JP8336799
申请日：1999-03-26
申请人：日本電子株式会社
发明人：天草貴昭
IPC分类号： F17C3/08 , H01J37/20 , F17C13/08 , G01N1/06 , G01Q30/08 , G01Q30/10 , G01Q30/20 , G12B9/08

77. 发明专利

JP2006030015A Magnetic information detector 审中-公开
标题翻译：磁信息检测器
公开(公告)号：JP2006030015A
公开(公告)日：2006-02-02
申请号：JP2004210095
申请日：2004-07-16
申请人： Sharp Corp , シャープ株式会社
发明人： SUZUKI IPPEI , FUJI HIROSHI
IPC分类号： G01N27/72 , G01Q30/02 , G01Q30/08 , G01Q30/10 , G01Q30/20 , G01Q60/50 , G01Q80/00
摘要： PROBLEM TO BE SOLVED: To provide a magnetic information detector capable of measuring magnetic information in a laser beam irradiation area, a non-irradiation area and an edge part, as no scanning probe microscope capable of satisfying a requirement of emitting a similar beam even in measurement of the mark and of measuring the periphery of a beam spot exists, in the present, to measure a recording mark shape of photo-assisted medium of a type applied locally with heat using a laser beam even in regeneration.
SOLUTION: The scanning probe microscope capable of detecting the magnetic information is provided with a beam emission part for irradiating an optional point of a measuring object 14 of which the magnetism is varied with a temperature, with a beam 15 while fixed, and detects the magnetic information (magnetized direction of the measuring object 14, and a magnetized level thereof) of the measuring object 14, using a probe 111.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够测量激光束照射区域，非照射区域和边缘部分中的磁信息的磁信息检测器，作为不能满足发射类似的要求的扫描探针显微镜即使在测量标记和测量光束斑点的周边时，光束也存在，目前，即使在再生中，也可以用激光束局部热量地测量光辅助介质的记录标记形状。解决方案：能够检测磁信息的扫描探针显微镜设置有光束发射部分，用于在固定时用光束15照射磁性随温度变化的测量对象14的可选点，以及使用探头111检测测量对象14的磁信息（测量对象14的磁化方向及其磁化水平）。版权所有（C）2006，JPO＆NCIPI

78. 发明专利

JP2005083852A Scanning probe microscope 审中-公开
标题翻译：扫描探针显微镜
公开(公告)号：JP2005083852A
公开(公告)日：2005-03-31
申请号：JP2003315132
申请日：2003-09-08
申请人： Jeol Ltd , 日本電子株式会社
发明人： AMAKUSA TAKAAKI
IPC分类号： G01B7/34 , G01Q10/04 , G01Q30/08 , G01Q30/10 , G01Q30/16 , G01Q30/20 , G01Q70/04 , G01N13/10
摘要： PROBLEM TO BE SOLVED: To conform an assigned scanning area with an actual scanning area to allow accurate measurement reduced in an error, by measuring an electrostatic capacity due to temperature variation, and by correcting scanner sensitivity based on the electrostatic capacity, in a temperature-varied scanning probe microscope.
SOLUTION: This scanning probe microscope for detecting interatomic force acting between a probe and a sample or a tunnel current therein is provided with a piezoelectric scanning body for scanning the probe relatively with respect to the sample, an electrostatic capacity measuring means for measuring the electrostatic capacity of the piezoelectric scanning body, and a scan voltage generation means for supplying a voltage for the scanning by the piezoelectric scanning body in response to the electrostatic capacity measured by the electrostatic capacity measuring means.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了使分配的扫描区域与实际的扫描区域一致，以允许误差的精确测量，通过测量由于温度变化引起的静电容量，以及通过基于静电电容校正扫描仪灵敏度，温度变化的扫描探针显微镜。解决方案：用于检测作用在探针和样品之间的原子间力的扫描探针显微镜或其中的隧道电流设置有用于相对于样品扫描探针的压电扫描体，用于测量的静电电容测量装置压电扫描体的静电电容，以及扫描电压产生装置，用于响应由静电电容测量装置测得的静电电容，提供压电扫描体的扫描电压。版权所有（C）2005，JPO＆NCIPI

79. 发明专利

JP2004309348A Scanning probe microscope 有权
公开(公告)号：JP2004309348A
公开(公告)日：2004-11-04
申请号：JP2003104308
申请日：2003-04-08
申请人： Sii Nanotechnology Inc , エスアイアイ・ナノテクノロジー株式会社
发明人： ANDO KAZUNORI , HASUMURA SATOSHI , IWASA MASAYUKI , TAMURA MASAFUMI
IPC分类号： G01B21/30 , G01Q30/08 , G01Q30/10 , G01Q30/16 , G01Q30/20 , G01N13/10
摘要： PROBLEM TO BE SOLVED: To provide a scanning probe microscope for performing baking treatment without heating electric element components. SOLUTION: The scanning probe microscope comprises a cantilever 1 having a minute probe 2 at the tip; a displacement detection means 8 for detecting the displacement of the cantilever 1; and a sample-moving means 6 for moving a sample to measure the surface shape or surface physical properties of the sample. The scanning probe microscope has a cantilever holder 10 and a vacuum container 12, and fits the cantilever holder 10 to the vacuum container 12, thus securing airtightness in the vacuum container 12. COPYRIGHT: (C)2005,JPO&NCIPI

80. 发明专利

JP2004214569A Ferroelectric capacitor, method for manufacturing same, and semiconductor device 有权
公开(公告)号：JP2004214569A
公开(公告)日：2004-07-29
申请号：JP2003002577
申请日：2003-01-08
申请人： Fujitsu Ltd , 富士通株式会社
发明人： MATSUURA OSATAKE , MARUYAMA KENJI , TAKAI KAZUAKI
IPC分类号： C23C14/08 , C23C16/40 , G01Q30/04 , G01Q30/10 , G01Q70/04 , G01Q70/14 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor which improves its fatigue character and is suitably used as a large-capacity nonvolatile memory, a method for efficiently manufacturing the capacitor, and a high-performance semiconductor device which has the ferroelectric capacitor.
SOLUTION: The ferroelectric capacitor has a ferroelectric material held between a pair of electrodes. The ferroelectric material has a first ferroelectric layer with surface roughness (RMS) of ≥10 nm when measured with an atomic force microscope, and a second ferroelectric layer formed on the first layer and having a surface roughness (RMS) of ≤5 nm or less when measured with the atomic force microscope. In the method for manufacturing the ferroelectric capacitor, the first layer is formed on one of the pair of electrodes at a temperature lower than a crystallization temperature at which the second layer has a crystallization structure exhibiting a ferroelectric property.
COPYRIGHT: (C)2004,JPO&NCIPI

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