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71. 发明专利

JP2000215786A ELECTRON EMISSION ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JP2000215786A
公开(公告)日：2000-08-04
申请号：JP1253099
申请日：1999-01-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KITAHATA MAKOTO , DEGUCHI MASAHIRO , IMAI KANJI , SEKIGUCHI TOMOHIRO , KUROKAWA HIDEO , KOGA KEISUKE , SHIRATORI TETSUYA , KAWASE TORU
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To provide an electron emission element containing an electron emission part (emitter part) capable of emitting electrons safely and efficiently, composed by using emissive material easy to be handled, and a manufacturing method of the electron emission element. SOLUTION: This electron emission element is equipped at least with a cathode electrode, an electron emission part 2 arranged in contact with the cathode electrode, an extracting electrode 3 installed near the electron emission part 2, and an anode electrode arranged oppositely to the cathode electrode. The electron emission part 2 is equipped with easily-emissive material, and an insulator 6 installed so as to cover at least a part of the periphery of the easily-emissive material. This manufacturing method of the electron emission element contains a first process in which the electron emission side surface of the electron emission part 2 where the easily-emissive material is exposed is coated with a conductive thin film 8, and a second process in which a part of the conductive thin film 8, at least contacted with the easily-emissive material, is removed to form an opening part 11 by applying a prescribed voltage between the easily-emissive material and the conductive thin film 8, and hereby the conductive thin film 8 is composed into the extracting electrode 3.

72. 发明专利

JP2000208026A ELECTRON EMITTING ELEMENT 失效
公开(公告)号：JP2000208026A
公开(公告)日：2000-07-28
申请号：JP500499
申请日：1999-01-12
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KITAHATA MAKOTO , DEGUCHI MASAHIRO , ITO KUNIO , KUZUMAKI TOORU
IPC分类号： H01J9/02 , C01B31/02 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To provide a high efficient electron emitting element by drawing a cylinder having a substance containing at least carbon n-tubes on the inside thereof to orient the carbon n-tubes contained in the substance arranged on the inside of the cylinder in one direction. SOLUTION: A cylinder 3 having a substance 1 containing carbon n-tubes on the inside thereof is thinly extended. The carbon n-tubes are drawn in longitudinal direction thereof, and gradually become the same direction with the cylinder extended in its longitudinal direction to orient the carbon n-tubes 4 in one direction. Then, the directions of the carbon n-tubes 4 which have been faced in arbitrary directions are set in the same direction, and an average value of angles in the longitudinal direction of the cylinder to the longitudinal direction of the n-tube 1 vertically disposed to an end surface 7 becomes 30 degrees or less, for instance. Thereby, directions of field emitting electrons become the same, so that spread of an electron stream is reduced to obtain an advantageous element. As for metal composed the cylinder having the substance 1 containing the carbon n-tube on the inside thereof, the metal which does not form carbide such as copper and those alloys are desirable.

73. 发明专利

JPH11224861A ACTIVATION METHOD AND ACTIVATION DEVICE FOR SEMICONDUCTOR IMPURITY 失效
公开(公告)号：JPH11224861A
公开(公告)日：1999-08-17
申请号：JP33888598
申请日：1998-11-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA TETSUHISA , KITAGAWA MASATOSHI , UCHIDA MASAO , KITAHATA MAKOTO , MITSUYU TSUNEO
IPC分类号： H01L21/265 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To provide an activation method and activation device for a semiconductor impurity, capable of efficiently and surely activating impurities even if a laser of relatively small output is used. SOLUTION: An SiC substrate 1 and an SiC thin film 2, to which impurity elements have been added, and irradiated with laser beams 5 of a wavelength longer than the wavelength for causing the band end adsorption of a semiconductor or irradiated with the laser beams 5 of a wavelength absorbed by the vibration of bonding between the constituent element of the semiconductor and the impurity element, the wavelength of 9-11 μm for instance. Especially, in the case of adding Al to SiC, they are irradiated with the laser beam 5 whose wavelength is 9.5-10 μm. As a result, even if a laser device of relatively small output is used, the impurities are efficiently and surely activated, and especially the activation of p-type impurities of SiC which were difficult conventionally is performed very efficiently.

74. 发明专利

JPH11195371A ELECTRON EMITTING ELEMENT, AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11195371A
公开(公告)日：1999-07-21
申请号：JP9796698
申请日：1998-04-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KUROKAWA HIDEO , SHIRATORI TETSUYA , SATO TOSHIFUMI , DEGUCHI MASAHIRO , KITAHATA MAKOTO
IPC分类号： H01J9/02 , H01J1/30 , H01J1/316
摘要： PROBLEM TO BE SOLVED: To provide an electron emitting element of high stability capable of efficiently emitting electrons by providing plural electron emitting parts comprising particles or aggregates of particles in spots. SOLUTION: In an electron emitting element, at lest two electrodes 2, 3 disposed at a specified interval from each other in the horizontal direction, and plural electron emitting parts 1 dispersed between the electrodes 2, 3 are provided. Otherwise, in the electron emitting element, at least two electrodes 2, 3 disposed at a specified interval, a conductive layer disposed between the electrodes 2, 3 to be electrically connected to the electrodes 2, 3, and plural electron emitting parts 1 dispersed on the surface of the conductive layer between the electrodes 2, 3 are provided. Each of the electron emitting part 1 is composed of particles of specified material, or an agregate of the particles. Favorably, the electron emitting part 1 is composed using diamond particles or an aggregate of diamond particles. As a treatment process to control surface structure of the diamond particles is executed, electron emission efficiency is improved.

75. 发明专利

JPH11157988A DEVICE FOR GROWING CRYSTAL AND GROWTH OF CRYSTAL 失效
公开(公告)号：JPH11157988A
公开(公告)日：1999-06-15
申请号：JP32774997
申请日：1997-11-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UCHIDA MASAO , KITAHATA MAKOTO , KITAGAWA MASATOSHI
IPC分类号： C30B25/08 , C23C16/44 , C30B29/36 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a device for growing a crystal, capable of growing the crystal having a uniform crystal film thickness and a uniform crystallinity at a high rate by disposing a growth chamber having a space for setting a substrate therein, a casing for covering the growth chamber, a heating device, a gas-supplying system for supplying gases into the growth chamber and the casing, and a gas-exhausting system for exhausting the gases, and supplying the gases from the lower side of the growth chamber. SOLUTION: This device is used for growing a crystal such as the crystal of silicon carbide which is a semiconductor material applied to power devices or devices operated at high temperatures. The device has a structure for efficiently thermally decomposing a reaction gas supplied into a growth chamber and supplying the reaction gas to a substrate in a high density, and is formed so that the gas is homogeneously distributed, while preventing the turbulent flow of the gas. The device for growing the crystal comprises a growth chamber 10a made from a carbon material and coated with silicon carbide, a shaft 10b used for supplying the reaction gas and simultaneously supporting the growth chamber, a quartz casing 11 and a heating coil 12. The reaction gas and an inert gas are supplied from the directions of the allows 15 and 16, respectively.

76. 发明专利

JPH1196893A ELECTRON-EMITTING ELEMENT, ITS MANUFACTURE, AND IMAGE DISPLAY DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1196893A
公开(公告)日：1999-04-09
申请号：JP25197597
申请日：1997-09-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIRATORI TETSUYA , KUROKAWA HIDEO , SATO TOSHIFUMI , KITAHATA MAKOTO , DEGUCHI MASAHIRO
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide an electron emission element, capable of extracting high current at a low voltage, and provide a flat type image display device with low voltage driving and high brightness and its manufacturing method. SOLUTION: The surface of a conducting layer 1 formed on a substrate is made rough, particles or aggregates of particles 2 are attached independently to the surface of the conducting layer 1 along the recesses and projections, without coming in contact with each other to form an electron emission part 3. Compared with formation on a flat conducting layer, electric field convergence is made high, and extracting of electrons is made possible by only applying low voltage to facing electrodes. Since particles or aggregates of particles 2 for constituting the electron emission part 3 are independent without coming in contact with each other, each particle becomes the starting point or electron emission, electron emission current from the electron emission part 3 is formed by the accumulation of electron emission from the particles or the aggregates of particles 2, so that the current is made large and uniform spatially and temporally.

77. 发明专利

JPH1081589A DIAMOND FILM AND ITS PRODUCTION 失效
公开(公告)号：JPH1081589A
公开(公告)日：1998-03-31
申请号：JP14398097
申请日：1997-06-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： DEGUCHI MASAHIRO , KITAHATA MAKOTO , KUROKAWA HIDEO , SHIRATORI TETSUYA
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C25D13/02 , H01L21/205 , H01L21/314
摘要： PROBLEM TO BE SOLVED: To prepare a dense diamond film of good quality having a high surface flatness by efficiently carrying out the nucleation when forming a diamond film with good reproducibility according to a simple technique. SOLUTION: Diamond grains 2, having =1×10 grains per square cm distribution density. The resultant diamond grains 2 are used as growth nuclei to form a diamond film 4 according to a plasma CVD(chemical vapor deposition) method.

78. 发明专利

JPH1069868A PHOSPHOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1069868A
公开(公告)日：1998-03-10
申请号：JP22488496
申请日：1996-08-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： DEGUCHI MASAHIRO , KITAHATA MAKOTO , KUROKAWA HIDEO , SHIRATORI TETSUYA
IPC分类号： C30B29/04 , H01J9/04 , H01J29/04 , H01J31/15
摘要： PROBLEM TO BE SOLVED: To make efficient and stable electron-ray emission possible by placing a plurality of particles of specific particle diameters or an aggregate of particles on the surface of a cathode material or on a surface layer. SOLUTION: In a phosphor light-emitting device comprising a cathode part 1, a phosphor part 2, a conductive layer 3, and a sealed container 4, either the surface of the cathode part 1 or a surface layer comprises particulate diamond with an average particle size of not more than 0.2μm. Carbon atoms on this surface or the front surface of diamond placed on the surface layer preferably include structures coupled with 2×10 hydrogen atoms per cm , so that efficient and stable electron-ray emission is made possible.

79. 发明专利

JPH0982643A MANUFACTURE OF SILICON CARBIDE THIN FILM 失效
公开(公告)号：JPH0982643A
公开(公告)日：1997-03-28
申请号：JP23748895
申请日：1995-09-14
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KITAHATA MAKOTO
IPC分类号： C30B23/06 , H01L21/20 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To provide a forming method of single phase 2C-SiC single crystalline thin film developing less crystalline defect on an Si wafer by heteroepitaxially growing a thin film on an Si substrate surface. SOLUTION: In this method of manufacturing silicon carbide thin film having the first step of forming silicon carbide carbonizing the Si substrate surface by feeding carbon and heating the surface, and the second step of growing the silicon carbide by feeding the carbon and silicon after the carbonization, multiple terraces 5 and steps 6 exist on the offcut substrate surface of Si, because different surface reactivities are displayed in the P direction 8 of long continuous atomic row in parallel with step edges 10 as well as in the N direction 7 of atomic row in short terrace dicided by the step edges 10 perpendicular to the same 10. In such a constitution, because of this anisotropy, a single phase SiC single crystalline thin film developing less crystalline defect containing no antiphase boundary(APB) at all can be formed.

80. 发明专利

JPH08259400A ETCHING OF DIAMOND AND DEVICE THEREFOR 失效
公开(公告)号：JPH08259400A
公开(公告)日：1996-10-08
申请号：JP6994495
申请日：1995-03-28
申请人： MATSUSHITA ELECTRIC IND CO LTD , JAPAN RES DEV CORP
发明人： DEGUCHI MASAHIRO , YOSHIDA TETSUHISA , KITAHATA MAKOTO , HIRAO TAKASHI
IPC分类号： C30B29/04 , C23F4/00 , C23F4/02 , C30B33/12
摘要： PURPOSE: To easily and efficiently etch diamond without damaging the diamond by irradiating the diamond with accelerated particle lumps each comprising plural molecules or atoms in a vacuum atmosphere. CONSTITUTION: The method for etching diamond comprises introducing a supply gas from a gas-introducing port 10 into a particle lump-producing section 4 to produce particle lumps each comprising 2 to 10000 molecules or atoms, ionizing the particle lumps in an ionizing section 5, screening the particle lumps comprising a prescribed number of molecules or atoms in a mass-separating section 6, accelerating the particle lumps in an acceleration section 7 to give the particle lumps having energies of to 1×10 Torr. The raw material gas for producing the particle lumps is preferably a rare gas such as argon, carbon dioxide or oxygen.

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