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71. 发明专利

JP2010263239A Substrate processing method, method of controlling film stress, and substrate processing apparatus 审中-公开
标题翻译：基板处理方法，控制薄膜应力的方法和基板处理装置
公开(公告)号：JP2010263239A
公开(公告)日：2010-11-18
申请号：JP2010166803
申请日：2010-07-26
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIZUNO KANEKAZU , SATO TAKETOSHI , SAKAI MASANORI , OKUDA KAZUYUKI
IPC分类号： H01L21/318 , C23C16/42 , H01L21/31
CPC分类号： C23C16/45546 , C23C16/345 , C23C16/50 , H01L21/3141
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method capable of controlling film stress, and a substrate processing apparatus.
SOLUTION: In this substrate processing method by which a desired thin film is formed on a wafer 200 by alternately supplying and discharging a gas containing chlorine and ammonium gas to and from a processing chamber 201 forming a space for processing the wafer 200, the supply time of the ammonium gas is controlled to be set longer than twice of the supply time of the gas containing chlorine.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够控制膜应力的基板处理方法，以及基板处理装置。解决方案：在通过向形成用于处理晶片200的空间的处理室201交替地供给和排出含有氯和铵气体的气体而在晶片200上形成期望的薄膜的基板处理方法中，氨气的供给时间被控制为长于含氯气体的供给时间的两倍。版权所有（C）2011，JPO＆INPIT

72. 发明专利

JP2010028095A Method for processing substrate and substrate processing apparatus 有权
标题翻译：用于处理基板和基板处理装置的方法
公开(公告)号：JP2010028095A
公开(公告)日：2010-02-04
申请号：JP2009114862
申请日：2009-05-11
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAZAKI HIROHISA , TAKEBAYASHI YUJI , SAKAI MASANORI , KATO TSUTOMU
IPC分类号： H01L21/316 , C23C16/455 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/4412 , C23C16/45527 , C23C16/45557 , H01L21/02112 , H01L21/02205
摘要： PROBLEM TO BE SOLVED: To shorten a processing time and to improve uniformity of a film thickness over the entire surface, when an oxide film is formed on a substrate by introducing an oxide gas. SOLUTION: The method for processing a substrate includes the steps of: supplying a source gas into a processing chamber housing substrates; removing the source gas and its intermediate remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate of the ozone remained in the processing chamber. Then, the above steps are repeated multiple times while the source gas and the ozone are alternately introduced so as not to be mixed with each other, thereby forming an oxide film on the surface of the substrates. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了缩短处理时间并提高整个表面上的膜厚度的均匀性，当通过引入氧化物气体在基板上形成氧化膜时。解决方案：用于处理衬底的方法包括以下步骤：将源气体供应到容纳衬底的处理室中; 将源气体及其中间体除去留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和臭氧中间体残留在处理室中。然后，将上述步骤重复多次，同时将源气体和臭氧交替地引入以不彼此混合，从而在基板的表面上形成氧化膜。版权所有（C）2010，JPO＆INPIT

73. 发明专利

JP2009239304A Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：JP2009239304A
公开(公告)日：2009-10-15
申请号：JP2009163570
申请日：2009-07-10
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , YOSHIMURA TOMOHIRO
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/00 , H01L21/318
CPC分类号： H01L21/0228 , C23C16/345 , C23C16/45525 , C23C16/45544 , C23C16/45546 , C23C16/45563 , C23C16/4584 , C23C16/509 , C23C16/52 , H01L21/0217 , H01L21/67017 , H01L21/67109 , H01L21/67253
摘要： PROBLEM TO BE SOLVED: To prevent or inhibit a reactive gas supply cycle and a substrate rotation cycle from synchronizing with each other to prevent deterioration in substrate in-plane uniformity in the thickness of a formed film. SOLUTION: A substrate processing apparatus has a processing chamber 201 for processing a wafer 200, a boat rotating mechanism 267 to rotate a wafer 200, and a gas supplying part to supply gas to the wafer 200, enabling at least two types of gases A, B to be alternately supplied a plurality of times so that a desired film is formed on the wafer 200. This substrate processing apparatus is provided with a controller 321 adapted for controlling a rotation cycle P of the substrate or a gas supply cycle T such that the rotation cycle P and the gas supply cycle T, which is defined as the time elapsed from flowing of gas A to the next flowing of gas A, will satisfy the following equation (1):¾mP-nT¾>≠0 (n, m are arbitrary natural numbers, >≠ represents being truly larger than 0, and ¾¾denotes an absolute value). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止或抑制反应气体供给循环和基板旋转周期彼此同步，以防止基板在成形膜的厚度方面的均匀性的劣化。解决方案：基板处理装置具有用于处理晶片200的处理室201，用于旋转晶片200的舟旋转机构267和用于向晶片200供应气体的气体供给部，能够使至少两种类型的气体A，B交替地供给多次，使得在晶片200上形成所需的膜。该基板处理装置设置有控制器321，其用于控制基板的旋转周期P或气体供给循环T 使得定义为从气体A流动到气体A的下一次流动所经过的时间的旋转周期P和气体供给循环T将满足以下等式（1）：¾mP-nT¾>≠0（n ，m是任意自然数，>≠表示真正大于0，¾表示绝对值。版权所有（C）2010，JPO＆INPIT

74. 发明专利

JP2009147373A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2009147373A
公开(公告)日：2009-07-02
申请号：JP2009069699
申请日：2009-03-23
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , SHIMA NOBUHITO , OKUDA KAZUYUKI
IPC分类号： H01L21/31 , C23C16/44 , H01L21/3065
CPC分类号： C23C16/4405 , C23C16/45536
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of effectively removing an element contained in a cleaning gas. SOLUTION: This manufacturing method of a semiconductor device manufactures a semiconductor device, by using a substrate treatment device, having passed through a process of supplying the whole of a reaction gas used in processing a substrate to a reaction vessel for removing an element contained in the cleaning gas supplied, into the reaction vessel, after a process of supplying the cleaning gas into the reaction vessel to clean the inside of the reaction vessel. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够有效地去除包含在清洁气体中的元素的半导体器件的制造方法。解决方案：半导体器件的制造方法通过使用基板处理装置制造半导体器件，该基板处理装置已经通过将用于处理基板的反应气体全部供应到用于除去元件的反应容器的处理在将清洁气体供应到反应容器中以清洁反应容器的内部的过程之后，将所提供的清洁气体中所含的气体包含在反应容器中。版权所有（C）2009，JPO＆INPIT

75. 发明专利

JP2009076590A Cleaning method 审中-公开
标题翻译：清洁方法
公开(公告)号：JP2009076590A
公开(公告)日：2009-04-09
申请号：JP2007242671
申请日：2007-09-19
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYA HIRONOBU , TAKEBAYASHI YUJI , SAKAI MASANORI , SASAKI SHINYA , YAMAZAKI HIROHISA , SUDA ATSUHIKO
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C23C16/4405 , B08B7/0035
摘要： PROBLEM TO BE SOLVED: To efficiently remove a film such as a high dielectric constant oxide film which is difficult to be etched by a fluorine-containing gas alone.
SOLUTION: This invention relates to a cleaning method of a substrate treatment apparatus which forms a desired film on a wafer 200 by supplying a raw material gas wherein there is disclosed the cleaning method of removing a film attached to the inside of a treatment chamber 201. The cleaning method comprises steps of: supplying a halogen-containing gas into the treatment chamber 201; and supplying the fluorine-containing gas into the treatment chamber 201 after staring the supply of the halogen-containing gas, wherein, in the step of supplying the fluorine-containing gas, the fluorine-containing gas is supplied while supplying the halogen-containing gas into the treatment chamber 201.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了有效地除去仅由含氟气体难以蚀刻的高介电常数氧化膜等膜。本发明涉及一种通过提供原料气体在晶片200上形成所需膜的基板处理设备的清洁方法，其中公开了除去附着在处理内部的膜的清洁方法清洁方法包括以下步骤：将含卤素气体供应到处理室201中; 在供给含卤素气体之后，将含氟气体供给到处理室201中，其中在供给含氟气体的步骤中，供给含氟气体的同时供给含氟气体进入治疗室201.版权所有（C）2009，JPO＆INPIT

76. 发明专利

JP2009049367A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009049367A
公开(公告)日：2009-03-05
申请号：JP2008127978
申请日：2008-05-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MIYA HIRONOBU , SAKAI MASANORI , MIZUNO KANEKAZU , KATO TSUTOMU , TAKEBAYASHI YUJI
IPC分类号： H01L21/316 , C23C16/40 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve coverage characteristic and loading effect of a metal oxide film without increment in the amount of supply and supply period of an oxidizing agent.
SOLUTION: The method for manufacturing semiconductor device includes the steps of carrying-in a wafer 200 into a processing chamber 201, forming an HfO
2 film on the wafer 200 by alternately supplying TEMAH and O
3 , under heating, into the processing chamber 201, and carrying-out the wafer 200 from the inside of the processing chamber 201. In the step of forming the HfO
2 film, heating temperature of TEMAH and heating temperature of O
3 are set to be different.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提高金属氧化物膜的覆盖特性和负载效果，而不增加氧化剂的供应和供应周期。解决方案：半导体器件的制造方法包括以下步骤：通过交替地供给TEMAH和O 2，将晶片200进入处理室201，在晶片200上形成HfO 2 SBB， SB> 3 进入处理室201，并从处理室201的内部输出晶片200.在形成HfO 2 SBB薄膜的步骤中， TEMAH的加热温度和O 3 的加热温度设定为不同。版权所有（C）2009，JPO＆INPIT

77. 发明专利

JP2007103966A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2007103966A
公开(公告)日：2007-04-19
申请号：JP2006352686
申请日：2006-12-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , KAGAYA TORU , YAMAZAKI HIROHISA
IPC分类号： H01L21/31 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To suppress formation of an Al film or the like, which is a byproduct, in a nozzle in forming an Al
2 O
3 film or the like.
SOLUTION: A substrate processing apparatus to be disclosed comprises a reaction tube 203 and a heater 207 for heating silicon wafers 200, and forms an Al
2 O
3 film on the surface of the silicon wafers 200 by alternately supplying trimethyl aluminum (TMA) and ozone (O
3 ) into the reaction tube 203. The substrate processing apparatus has supply tubes 232a, 232b for respectively flowing ozone and TMA, and a nozzle 233 for supplying the gases into the reaction tube 203. Ozone and TMA are respectively supplied into the reaction tube 203 via the nozzle 233 by connecting the two supply tubes 232a, 232b to the nozzle 233 arranged inside the heater 207 at a region where the temperature is lower than that of the region in the vicinity of the wafers 200 in the reaction tube 203.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了抑制在形成Al 2 SB 3 O 3膜的喷嘴中形成作为副产物的Al膜等，或类似。解决方案：要公开的基板处理装置包括用于加热硅晶片200的反应管203和加热器207，并且在...上形成Al 2 SB 3 O 3 SB 3膜通过交替地向反应管203中供给三甲基铝（TMA）和臭氧（O 3 SB 3），硅晶片200的表面。基板处理装置具有分别流过臭氧和TMA的供给管232a，232b 以及用于将气体供给到反应管203中的喷嘴233.通过将两个供给管232a，232b连接到设置在加热器207内部的喷嘴233，通过喷嘴233将臭氧和TMA分别供应到反应管203中区域，其温度低于反应管203中的晶片200附近的区域的温度。（C）版权所有（C）2007，JPO＆INPIT

78. 发明专利

JP2005243735A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2005243735A
公开(公告)日：2005-09-08
申请号：JP2004048453
申请日：2004-02-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO TAKETOSHI , SAKAI MASANORI , SHIMA NOBUHITO
IPC分类号： C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To effectively prevent byproducts from being adhered to the inside of an exhaust means in a substrate processing apparatus that supplies a plurality of processing gases alternately to process a substrate.
SOLUTION: The substrate processing apparatus is provided with a processing chamber 201 that supplies a plurality of processing gases alternately to process a wafer 200 as a substrate, and an exhaust system 250 to exhaust an atmosphere within the processing chamber 201. The exhaust system 250 is comprised of an exhaust means 246 and an inert gas supply means 30. The exhaust means 246 is provided with an enclosure 21 including an outlet 23 and an inlet 22 connected to an atmosphere on the side of the processing chamber 201, and a transfer means 24 that is in the enclosure 21 and is provided between the inlet 22 and the outlet 23 to transfer the atmosphere on the side of the inlet 22 to the side of the outlet 23. The inert gas supply means 30 is provided with a gas supply tube 32 to feed an inert gas, and a heating means 31 that is provided on the way to heat the inert gas at a predetermined temperature, and it supplies a high-temperature inert gas to the downstream side of a vacuum pump 246.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地防止副产物在交替地供给多个处理气体的基板处理装置中粘附到排气装置的内部，以处理基板。解决方案：基板处理装置设置有交替地供给多个处理气体以处理作为基板的晶片200的处理室201和排出处理室201内的气氛的排气系统250。排气系统250由排气装置246和惰性气体供给装置30组成。排气装置246设置有包括出口23和连接到处理室201侧的气氛的入口22的外壳21，传送装置24位于外壳21中并且设置在入口22和出口23之间，以将入口22侧的气氛转移到出口23侧。惰性气体供给装置30设置有气体供给管32供给惰性气体，以及加热装置31，该加热装置31设置在预定温度下加热惰性气体的途中，并且向真空pu的下游侧供给高温惰性气体（C）2005，JPO＆NCIPI

79. 发明专利

JP2005064538A Substrate processing device and method of manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及制造半导体器件的方法
公开(公告)号：JP2005064538A
公开(公告)日：2005-03-10
申请号：JP2004318647
申请日：2004-11-02
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI , KAGAYA TORU , YAMAZAKI HIROHISA
IPC分类号： H01L21/31
摘要： PROBLEM TO BE SOLVED: To suppress the formation of an Al film etc., in a nozzle as a by-product at the time of forming an Al
2 O
3 film etc.
SOLUTION: A substrate processing device has a reaction pipe 203 and a heater 207 which heats a silicon wafer 200 and forms the Al
2 O
3 film on the surface of the silicon wafer 200 by alternately supplying trimethylaluminum (TMA) and ozone (O
3 ) into the reaction pipe 203. The device is also provided with supply pipes 232a and 232b flowing respective the ozone and TMA, and a nozzle 233 which supplies a gas into the reaction pipe 203. The ozone and TMA are respectively supplied into the reaction pipe 203 through the nozzle 233 by connecting the supply pipes 232a and 232b to the nozzle 233 disposed inside of the heater 207 in a temperature region lower than the temperature in the vicinity of the wafer 200 in the reaction pipe 203.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：为了抑制在形成Al 2 O 3 / SB 3时作为副产物的喷嘴中的Al膜等的形成 >膜等。解决方案：基板处理装置具有反应管203和加热器207，加热器207加热硅晶片200并形成Al 2 SB 3 O 3 SB 3膜通过将三甲基铝（TMA）和臭氧（O 3 SB 3）交替供给到反应管203中而在硅晶片200的表面上。该装置还设置有供应管232a和232b，供应臭氧和 TMA和将气体供给到反应管203中的喷嘴233.通过将供给管232a和232b连接到设置在加热器207内部的喷嘴233，将臭氧和TMA分别通过喷嘴233供给到反应管203中在低于反应管203中的晶片200附近的温度的温度区域中。（C）2005年，JPO＆NCIPI

80. 发明专利

JP2005056891A Substrate processing device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2005056891A
公开(公告)日：2005-03-03
申请号：JP2003205709
申请日：2003-08-04
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SAKAI MASANORI
IPC分类号： H05H1/46 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To prevent electrical discharge from happening between a discharge electrode of an activating means and a placing means in a substrate processing device which is equipped with an activating means positioned inside or along a reaction chamber. SOLUTION: A vertical processing furnace 202 constituting the substrate processing device includes a processing chamber 201 for processing a wafer 200 with processing gas, and a boat 217 which serves as a holding unit that holds the wafer 200 in the processing chamber 201. Further, it includes a boat stand 221 serving as a placing means where the boat 217 is placed in the processing chamber 201, and the activating means 250 that is equipped with rod-shaped electrodes 269 and 270 which are provided inside or along the processing chamber 201 to excite the processing gas. The disc unit 221a of the boat stand 221 which confronts the rod-shaped electrodes 269 and 270 of the activation means 250 and comes into contact with the boat 217 and/or all the boat stand 221 including a cylindrical unit 221b is formed of a dielectric material. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止在设置有位于反应室内部或沿着反应室的启动装置的基板处理装置中的激活装置的放电电极和放置装置之间发生放电。构成基板处理装置的立式加工炉202包括用于处理具有处理气体的晶片200的处理室201和用作将晶片200保持在处理室201中的保持单元的船217。此外，它包括作为放置装置的船架221，其中船217被放置在处理室201中，以及启动装置250，其配备有杆状电极269和270，杆状电极269和270设置在处理室 201激发加工气体。面对激活装置250的杆状电极269和270并与包括圆柱形单元221b的船217和/或所有船架221接触的船架221的盘单元221a由电介质材料。版权所有（C）2005，JPO＆NCIPI

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