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71. 发明专利

JP4668100B2 Recharge tube of solid raw materials and recharge method using the same 有权
公开(公告)号：JP4668100B2
公开(公告)日：2011-04-13
申请号：JP2006073782
申请日：2006-03-17
申请人：コバレントマテリアル株式会社
发明人：俊雄久一
IPC分类号： C30B15/02 , C30B29/06

72. 发明专利

JP2011071415A Method of manufacturing silicon wafer 审中-公开
标题翻译：制造硅波的方法
公开(公告)号：JP2011071415A
公开(公告)日：2011-04-07
申请号：JP2009222585
申请日：2009-09-28
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ISOGAI HIROMICHI , SENSAI KOJI
IPC分类号： H01L21/306 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon wafer that is able to locally process a silicon wafer and planarize the entire silicon wafer surface with high precision and throughput, when performing the silicon wafer planarization process.
SOLUTION: The method includes the steps of measuring the size of thickness at each predetermined interval on a wafer surface to find first shape data of the silicon wafer W; performing the fast Fourier transform (FFT) on the first shape data to find a first frequency distribution; filtering the first frequency distribution by using the band-pass filter which only allows desired frequency components to pass and find a second frequency distribution; performing the inverse-Fourier transformation (IFFT) on the second frequency distribution to find the second shape data; and locally processing a section which is thicker than the reference thickness value, based on the second shape data.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造硅晶片的方法，当执行硅晶片平面化处理时，能够以高精度和高吞吐量对硅晶片进行局部处理并平整整个硅晶片表面。解决方案：该方法包括以下步骤：在晶片表面上以每个预定间隔测量厚度尺寸，以找到硅晶片W的第一形状数据; 对所述第一形状数据执行快速傅立叶变换（FFT）以找到第一频率分布; 通过使用仅允许期望的频率分量通过并找到第二频率分布的带通滤波器对第一频率分布进行滤波; 对第二频率分布执行傅立叶逆变换（IFFT）以找到第二形状数据; 并且基于第二形状数据来局部处理比参考厚度值厚的部分。版权所有（C）2011，JPO＆INPIT

73. 发明专利

JP2011068523A Method for refining quartz glass raw material powder 有权
标题翻译：精制玻璃原料粉的方法
公开(公告)号：JP2011068523A
公开(公告)日：2011-04-07
申请号：JP2009221841
申请日：2009-09-28
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： MAEDA ISAO
IPC分类号： C01B33/12 , B03C1/16 , B03C7/02 , B03C7/12 , C01B33/18
摘要： PROBLEM TO BE SOLVED: To provide a method for refining a quartz glass raw material powder, by which insulating impurity particles are separated and removed from the quartz glass raw material powder in which the insulating impurity particles are mixed. SOLUTION: The method for refining a quartz glass raw material powder includes: a step (S1) for heating the quartz glass raw material powder in which insulating impurity particles are mixed in quartz powder to carbonize the insulating impurity particles into carbonized impurity particles; a step (S2) for electrifying the quartz glass raw material powder in which the carbonized impurity particles are mixed; and a step (S3) for separating the quartz powder from the carbonized impurity particles by passing the electrified quartz glass raw material powder through between a couple of positive and negative electrodes arranged opposite to each other. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于精制石英玻璃原料粉末的方法，其中绝缘杂质颗粒从其中混合绝缘杂质颗粒的石英玻璃原料粉末中分离和除去。解决方案：石英玻璃原料粉末的精制方法包括：将石英玻璃原料粉末进行加热的工序（S1），将石英粉末中的绝缘杂质粒子混合，将绝缘杂质粒子碳化成碳化杂质粒子 ; 用于使碳化杂质颗粒混合的石英玻璃原料粉末通电的步骤（S2）; 以及通过将带电的石英玻璃原料粉末通过彼此相对布置的一对正极和负极之间来分离石墨粉与碳化杂质颗粒的步骤（S3）。版权所有（C）2011，JPO＆INPIT

74. 发明专利

JP2011017547A Method for analyzing microelement in titanium-containing material 审中-公开
标题翻译：在含钛材料中分析微量元素的方法
公开(公告)号：JP2011017547A
公开(公告)日：2011-01-27
申请号：JP2009160644
申请日：2009-07-07
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： TANAKA MASAFUMI , SUGIZAKI SHIGEAKI , SHIDARA HIROAKI
IPC分类号： G01N33/20 , G01N1/28
摘要： PROBLEM TO BE SOLVED: To provide a technique for quantifying a very small amount of an impurity element in titanium alone or a material containing a titanium compound with high sensitivity by a low-cost simple method.SOLUTION: This method for analyzing a microelement in titanium-containing material is composed of the process for preparing a granular or powdery analyzing raw material from titanium alone or the titanium-containing material, the process for dissolving the analyzing raw material by an acid with a concentration of 30 wt.% or above to prepare an acid solution, the process for diluting the acid solution by pure water to prepare an acid diluted solution with an acid concentration of 1-10 wt.%, the process for adding a precipitation suppressing substance to the acid diluted solution, the process for further diluting the acid diluted solution by pure water after the precipitation suppressing substance is added to the acid diluted solution to prepare an analyzing sample, and the process for quantitatively analyzing the impurity element in the analyzing sample. The analyzing sample contains both of 0.1-5.0 wt.% of the acid and 0.05-3.0 wt.% of the precipitation suppressing substance.
摘要翻译：要解决的问题：提供一种用于通过低成本简单的方法量化非常少量的钛中的杂质元素或含有高灵敏度的钛化合物的材料的技术。解决方案：该方法用于分析钛中的微量元素含有材料的方法由单独钛或含钛材料制备粒状或粉状分析原料的方法，通过浓度为30重量％以上的酸溶解分析原料的方法制备酸溶液，用纯水稀释酸溶液以制备酸浓度为1-10重量％的酸稀释溶液的方法，向酸稀释溶液中加入沉淀抑制物质的方法，进一步的方法将沉淀抑制物质添加到酸稀释溶液中后，用纯水稀释酸稀释溶液，制备分析样品用于定量分析分析样品中的杂质元素的过程。分析样品含有0.1-5.0重量％的酸和0.05-3.0重量％的沉淀抑制物质。

75. 发明专利

JP2011014645A Silicon wafer heat-treating method 有权
标题翻译：硅波热处理方法
公开(公告)号：JP2011014645A
公开(公告)日：2011-01-20
申请号：JP2009155967
申请日：2009-06-30
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SUDO HARUO , ARAKI KOJI , SENDA TAKESHI , AOKI TATSUHIKO , ISOGAI HIROMICHI , TOYODA EIJI , SENSAI KOJI
IPC分类号： H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer heat-treating method suppressing oxidization of a wafer surface and generation of hazes while suppressing an increase in treatment time and preventing the wafer and a heat treatment member from being damaged.
SOLUTION: The silicon wafer heat-treating method is of the type of heat-treating the silicon wafer by a vertical heat treatment furnace, wherein the inert gas flow rate immediately after the start of putting the silicon wafer into the furnace is ≥30 L/min and ≤45 L/min and the thickness of an oxide film formed on the silicon wafer surface when the wafer is put into the furnace is ≤16 Å.
COPYRIGHT: (C)2011,JPO&INPIT

76. 发明专利

JP4544708B2 Plasma-resistant member and a method of manufacturing the same 有权
标题翻译：空值
公开(公告)号：JP4544708B2
公开(公告)日：2010-09-15
申请号：JP2000218389
申请日：2000-07-19
申请人：コバレントマテリアル株式会社 , 株式会社東芝
发明人：雅彦市島 , 光広藤田 , 絵里子西村 , 克明青木 , 秀一齋藤
IPC分类号： C04B35/44 , H05H1/46 , B01J19/08 , C04B35/50 , C04B35/64 , C04B41/80 , C23C14/50 , C23C16/458 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065

77. 发明专利

JP2010177494A Method for heat treatment of silicon wafer 有权
标题翻译：硅氧烷热处理方法
公开(公告)号：JP2010177494A
公开(公告)日：2010-08-12
申请号：JP2009019268
申请日：2009-01-30
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , MURAYAMA KUMIKO , ARAKI KOJI , AOKI TATSUHIKO , SUDO HARUO , SENSAI KOJI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/26 , H01L21/316 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method for heat treatment of a silicon wafer capable of inhibiting generation of dislocation and degradation in wafer surface roughness during a semiconductor device process. SOLUTION: The method for heat treatment of the wafer obtained by slicing a silicon single-crystal ingot manufactured by the Czochralski method includes steps of quickly heating and quickly cooling in a mixture gas atmosphere of oxygen and argon with a partial pressure of oxygen of 1.0%≤ and ≤20% at the highest achieved temperature of ≥1,300°C for retention time of ≥1 second and ≤60 seconds at a silicon melting point or lower, and forming an oxide film with a thickness of ≤24.3 nm on the wafer surface. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半导体器件工艺期间能够抑制晶片表面粗糙度产生位错和劣化的硅晶片的热处理方法。解决方案：通过切片由切克劳斯基法制造的硅单晶锭进行切片获得的晶片的热处理方法包括在氧气和氩气的混合气体气氛中以氧气分压快速加热并快速冷却的步骤在最高实现温度≥1300℃，保持时间≥1秒，硅熔点以下≤60秒时，为1.0％≤≤20％，形成厚度≤24.3nm的氧化膜晶圆表面。版权所有（C）2010，JPO＆INPIT

78. 发明专利

JP4515719B2 Semiconductor substrate 有权
公开(公告)号：JP4515719B2
公开(公告)日：2010-08-04
申请号：JP2003162784
申请日：2003-06-06
申请人：コバレントマテリアル株式会社 , 株式会社東芝
发明人：玲子吉村 , 宰多田 , 宏治泉妻 , 一日兒鹿島
IPC分类号： H01L21/02 , H01L21/322 , H01L27/12

79. 发明专利

JP2010141166A Method for manufacturing diffused wafer 有权
标题翻译：制造扩散波的方法
公开(公告)号：JP2010141166A
公开(公告)日：2010-06-24
申请号：JP2008316666
申请日：2008-12-12
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KANEKO TADAYOSHI , KOIKE JUN
IPC分类号： H01L21/22 , B24B37/013 , H01L21/304 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a diffused wafer capable of suppressing variations in the film thickness of a non-diffused layer by optimizing a preceding extracting-evaluation by SR method before polishing. SOLUTION: The method for manufacturing a diffused wafer is characterized in that it comprises: a first diffusing step for diffusing impurities to a semiconductor wafer and a surface-resistive monitor wafer; a second step for diffusing additionally impurities in the depth direction; a step for evaluating a surface-resistance of the surface-resistive monitor wafer; a determining step for determining the number of extracted wafers for calculating a correction value based on the evaluating result; a first measuring step for measuring a thickness of non-diffused layer of the wafer for calculating a correction value by using FT-IR method; a second measuring step for measuring a thickness of non-diffused layer of the wafer for calculating a correction value by using SR method; a step for calculating a correction value between both of measuring results based on them; and a polishing step for polishing the non-diffused layer of the semiconductor wafer, while monitoring an amount of polishing by using measurement of the thickness of non-diffused layer by FT-IR method and the correction value. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在研磨前优化SR方法的先前提取评价来提供能够抑制非扩散层的膜厚变化的扩散晶片的制造方法。解决方案：扩散晶片的制造方法的特征在于它包括：用于将杂质扩散到半导体晶片和表面电阻监测晶片的第一扩散步骤; 用于在深度方向附加地扩散杂质的第二步骤; 用于评估表面电阻监测晶片的表面电阻的步骤; 确定步骤，用于基于所述评估结果确定用于计算校正值的提取的晶片的数量; 用于通过使用FT-IR方法测量用于计算校正值的晶片的非扩散层的厚度的第一测量步骤; 第二测量步骤，用于通过使用SR方法测量用于计算校正值的晶片的非扩散层的厚度; 用于计算基于它们的测量结果之间的校正值的步骤; 以及用于通过使用FT-IR方法测量非扩散层的厚度和校正值来监测半导体晶片的非扩散层的抛光步骤。版权所有（C）2010，JPO＆INPIT

80. 发明专利

JP2010140994A Evaluation method for silicon wafer 审中-公开
标题翻译：硅波的评估方法
公开(公告)号：JP2010140994A
公开(公告)日：2010-06-24
申请号：JP2008314148
申请日：2008-12-10
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ITAKOSHI TOORU
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To enable more appropriate quality evaluation of a diffusion wafer, using lifetime measuring by μ-PCD method which has conventionally been difficult.
SOLUTION: A method for evaluating the lifetime of the diffusion wafer is provided, wherein after forming an oxide film with thickness of 1.4 μm or more and 1.5 μm or less in the surface of the diffusion wafer, recombination lifetime is measured by μ-PCD method. Moreover, the thermal oxidation processing of the diffusion wafer may be performed by wet oxidization.
COPYRIGHT: (C)2010,JPO&INPIT

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