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1. 发明专利

JP2010141166A Method for manufacturing diffused wafer 有权
标题翻译：制造扩散波的方法
公开(公告)号：JP2010141166A
公开(公告)日：2010-06-24
申请号：JP2008316666
申请日：2008-12-12
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KANEKO TADAYOSHI , KOIKE JUN
IPC分类号： H01L21/22 , B24B37/013 , H01L21/304 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a diffused wafer capable of suppressing variations in the film thickness of a non-diffused layer by optimizing a preceding extracting-evaluation by SR method before polishing. SOLUTION: The method for manufacturing a diffused wafer is characterized in that it comprises: a first diffusing step for diffusing impurities to a semiconductor wafer and a surface-resistive monitor wafer; a second step for diffusing additionally impurities in the depth direction; a step for evaluating a surface-resistance of the surface-resistive monitor wafer; a determining step for determining the number of extracted wafers for calculating a correction value based on the evaluating result; a first measuring step for measuring a thickness of non-diffused layer of the wafer for calculating a correction value by using FT-IR method; a second measuring step for measuring a thickness of non-diffused layer of the wafer for calculating a correction value by using SR method; a step for calculating a correction value between both of measuring results based on them; and a polishing step for polishing the non-diffused layer of the semiconductor wafer, while monitoring an amount of polishing by using measurement of the thickness of non-diffused layer by FT-IR method and the correction value. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在研磨前优化SR方法的先前提取评价来提供能够抑制非扩散层的膜厚变化的扩散晶片的制造方法。解决方案：扩散晶片的制造方法的特征在于它包括：用于将杂质扩散到半导体晶片和表面电阻监测晶片的第一扩散步骤; 用于在深度方向附加地扩散杂质的第二步骤; 用于评估表面电阻监测晶片的表面电阻的步骤; 确定步骤，用于基于所述评估结果确定用于计算校正值的提取的晶片的数量; 用于通过使用FT-IR方法测量用于计算校正值的晶片的非扩散层的厚度的第一测量步骤; 第二测量步骤，用于通过使用SR方法测量用于计算校正值的晶片的非扩散层的厚度; 用于计算基于它们的测量结果之间的校正值的步骤; 以及用于通过使用FT-IR方法测量非扩散层的厚度和校正值来监测半导体晶片的非扩散层的抛光步骤。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009194001A Horizontal diffusion furnace, and diffusion layer forming method 审中-公开
标题翻译：水平扩散炉和扩散层形成方法
公开(公告)号：JP2009194001A
公开(公告)日：2009-08-27
申请号：JP2008030200
申请日：2008-02-12
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KOIKE JUN
IPC分类号： H01L21/22 , H01L21/225
摘要： PROBLEM TO BE SOLVED: To provide a horizontal diffusion furnace and a diffusion layer forming method, achieving a manufacture of a diffusion wafer having high in-plane uniformity in concentration and depth of an impurity diffusion layer even in a large-diameter semiconductor wafer by controlling flow rates of material gas and carrier gas axially flowing in a cylinder of a process tube.
SOLUTION: The horizontal diffusion furnace 1 has the cylindrical process tube 2 with the semiconductor wafer W inserted, a heater 4 heating the semiconductor wafer W, a gas introducing tube 10 introducing the material gas and the carrier gas into the process tube 2 and gas feed-out tubes 11, 12, 13, 14 branched from the gas introducing tube 10 along upper and lower inner walls and both side inner walls. The gas feed-out tubes 11, 12, 13, 14 extend longitudinally in the process tube 2 and have pluralities of openings formed longitudinally toward the axis of the cylinder of the process tube 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了提供水平扩散炉和扩散层形成方法，即使在大直径半导体中也可以制造具有高的杂质扩散层的浓度和深度的面内均匀性高的扩散晶片通过控制在工艺管的圆筒中轴向流动的原料气体和载气的流速来控制晶片。解决方案：水平扩散炉1具有插入半导体晶片W的圆柱形处理管2，加热半导体晶片W的加热器4，将原料气体和载气引入工艺管2的气体导入管10 以及从气体导入管10沿着上下内壁和两侧内壁分支的气体排出管11,12,13,14。气体供给管11,12,13,14在处理管2中纵向延伸，并具有纵向朝向处理管2的圆筒的轴线形成的多个开口。（C）2009，JPO＆INPIT

3. 发明专利

JP2009111064A Boat for lateral wafer 审中-公开
标题翻译：横向船的船
公开(公告)号：JP2009111064A
公开(公告)日：2009-05-21
申请号：JP2007280401
申请日：2007-10-29
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KOIKE JUN
IPC分类号： H01L21/683 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To provide a boat for a lateral wafer which is durably used and can reduce an in-surface resistance variation after the semiconductor wafer is film-formed. SOLUTION: The lateral wafer boat is characterized in that a pair of side wafer supports supporting the side of the semiconductor wafer and a pair of lower wafer supports supporting a lower portion are fixed to a fixation portion and the side wafer support and the lower wafer support adjacent to each other are connected to each other and fixed by a connection reinforcing portion at a place other than the fixation portion, wherein the reinforcing portion is disposed outside a region which includes the sectional width of the wafer support centered about a straight line connecting the sectional center of the wafer support and the sectional center of the wafer support adjoining it, and also disposed at the side where the semiconductor wafer is not mounted, the straight line passing the sectional center of the wafer support is positioned perpendicularly to the straight line connecting both the centers and passes the section of a joining part of the reinforcing portion for the wafer support, and wherein the cross section of the joining part is 20 to 90% of the cross section of the wafer support to be joined, and the cross section of the surface of the reinforcing portion perpendicular to a gas passing direction is 10 to 60% of the cross section of the wafer support. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供耐久地使用的横向晶片的船，并且可以在半导体晶片成膜之后减小表面电阻变化。解决方案：横向晶片舟皿的特征在于，支撑半导体晶片侧的一对侧面晶片支架和支撑下部的一对下部晶片支撑件固定到固定部分和侧面晶片支撑件彼此相邻的下部晶片支撑件彼此连接并且在除了固定部分之外的位置处由连接加强部分固定，其中加强部分设置在包括以直线为中心的晶片支架的截面宽度的区域的外侧连接晶片支架的截面中心和与其邻接的晶片支架的截面中心的线，并且还设置在半导体晶片未安装的一侧，通过晶片支撑件的中心的直线垂直于连接两个中心的直线并通过用于晶片支撑的加强部分的接合部分的部分 t，并且所述接合部的截面为所述接合用晶片支撑体的截面的20〜90％，所述加强部的与气体通过方向垂直的面的截面为10〜60％的晶片支架的横截面。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2009064851A Method of manufacturing diffused wafer 审中-公开
标题翻译：制造扩散波的方法
公开(公告)号：JP2009064851A
公开(公告)日：2009-03-26
申请号：JP2007229707
申请日：2007-09-05
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KANEKO TADAYOSHI , KOIKE JUN
IPC分类号： H01L21/22 , H01L21/223
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a diffused wafer for easily reducing the variation of the diffusion depth of the diffused wafer and easily achieving high quality and low cost.
SOLUTION: In the heat treatment using a horizontal diffusion furnace wherein a plurality of diffused wafers W are mounted on a boat 11 for diffusion, and the diffused wafers W in a process tube 13 are heated by a heater 12 cylindrically surrounding the perimeter thereof, the heat treatment is carried out so that the center of the diffused wafers W is positioned lower than the center of the diameter of the inner wall 12a of the heater, and when the center position of the diffused wafers W with reference to the center of the diameter is denoted by Y, -10 mm≤Y is satisfied. Further, more preferably, the diffused wafers are mounted in the process tube so that the center position Y of the diffused wafers satisfies -10 mm≤Y≤-1 mm.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造扩散晶片的方法，用于容易地减少扩散晶片的扩散深度的变化，并且容易实现高质量和低成本。解决方案：在使用水平扩散炉的热处理中，其中多个扩散晶片W安装在船11上用于扩散，并且处理管13中的扩散晶片W被圆柱形围绕周边的加热器12加热进行热处理，使得扩散晶片W的中心位于比加热器的内壁12a的直径的中心低的位置，并且当扩散晶片W的中心位置相对于中心的直径由Y表示，满足-10mm≤Y。此外，更优选地，扩散晶片安装在处理管中，使得扩散晶片的中心位置Y满足-10mm≤Y≤-1mm。版权所有（C）2009，JPO＆INPIT

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