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61. 发明专利

JP4057907B2 Method of manufacturing a surface acoustic wave device 有权
公开(公告)号：JP4057907B2
公开(公告)日：2008-03-05
申请号：JP2002505752
申请日：2001-06-07
申请人：株式会社東芝
发明人：利幸高木
IPC分类号： H03H3/08 , C23C14/35
CPC分类号： H03H3/08

62. 发明专利

JP2007194999A Surface acoustic wave element and method of manufacturing same 有权
标题翻译：表面声波元件及其制造方法
公开(公告)号：JP2007194999A
公开(公告)日：2007-08-02
申请号：JP2006012058
申请日：2006-01-20
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： YAJIMA ARITSUGU , HIGUCHI AMAMITSU , KASUYA YOSHIKAZU
IPC分类号： H03H3/08 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/23 , H03H9/25
CPC分类号： H03H3/08 , H03H9/02574 , H03H9/0585 , H03H9/1071 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a surface acoustic wave element which is easily made small-sized and thin and is easy to package and has a high reliability. SOLUTION: The method of a surface acoustic wave element 10 having comb-shaped IDT electrodes 60 formed on a surface of a semiconductor substrate 20, includes steps of; forming insulating layers 21 to 23 on an active side surface of the semiconductor substrate 20; forming a base layer 30 throughout a surface of the insulating layer 23; flattening a surface of the base layer 30; forming a piezoelectric material 51 on the flattened surface of the base layer 30; forming IDT electrodes 60 on a surface of the piezoelectric material 51; and forming a bank 41 which is higher than a height from the surface of the base layer 30 to surfaces of IDT electrodes 60 and surrounds the piezoelectric material 51 and the IDT electrodes 60, on a surface peripheral edge part of the base layer 30. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种容易制成小型化，易于封装并具有高可靠性的表面声波元件的制造方法。解决方案：具有形成在半导体衬底20的表面上的梳状IDT电极60的表面声波元件10的方法包括以下步骤：在半导体衬底20的有源侧表面上形成绝缘层21至23; 在绝缘层23的整个表面上形成基层30; 使基层30的表面变平; 在基层30的平坦表面上形成压电材料51; 在压电材料51的表面上形成IDT电极60; 并且形成从基底层30的表面到IDT电极60的表面的高度的堤岸41，并且在基底层30的表面周边部分围绕压电体51和IDT电极60。 P>版权所有（C）2007，JPO＆INPIT

64. 发明专利

JP3894917B2 Boundary acoustic wave device and a method of manufacturing the same 有权
公开(公告)号：JP3894917B2
公开(公告)日：2007-03-22
申请号：JP2003382346
申请日：2003-11-12
申请人：富士通メディアデバイス株式会社 , 富士通株式会社
发明人：直之三島 , 道雄三浦
IPC分类号： H01L41/09 , H03H9/145 , H01L41/18 , H01L41/22 , H03H3/08 , H03H9/02 , H03H9/25
CPC分类号： H03H9/0222 , H03H3/08
摘要： An elastic boundary wave device includes a first piezoelectric substrate (2), IDTs (3) arranged thereon, a first dielectric film (5) having a smoothed surface that covers the IDTs, a second substrate (6) that is a silicon-based substrate, and a second dielectric film (7) provided on a main surface of the second substrate. The smoothed surface of the first dielectric surface and a surface of the second dielectric film (7) are joined together.

65. 发明专利

JP3885824B2 Surface acoustic wave device 有权
公开(公告)号：JP3885824B2
公开(公告)日：2007-02-28
申请号：JP2005509259
申请日：2004-08-06
申请人：株式会社村田製作所
发明人：武志中尾 , 拓生羽田 , 道雄門田
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/25
CPC分类号： H03H9/02559 , H03H3/08

66. 发明专利

JP3885785B2 Surface acoustic wave device, a method of manufacturing the same, and electronic equipment 有权
公开(公告)号：JP3885785B2
公开(公告)日：2007-02-28
申请号：JP2003321797
申请日：2003-09-12
申请人：セイコーエプソン株式会社
发明人：政宏押尾
IPC分类号： H03H9/145 , H03H3/08 , H03H3/10 , H03H9/02 , H03H9/25
CPC分类号： H03H3/08 , H03H9/02551 , H03H9/25

67. 发明专利

JP2007020073A Electronic component and its manufacturing method 有权
标题翻译：电子元件及其制造方法
公开(公告)号：JP2007020073A
公开(公告)日：2007-01-25
申请号：JP2005201697
申请日：2005-07-11
申请人： Nippon Dempa Kogyo Co Ltd , 日本電波工業株式会社
发明人： TSUDA TOSHIMASA , ABE SEIJI , SAKAI MINORU , SAKAIRI NATSUHIKO
IPC分类号： H03H9/25 , H01L21/60 , H01L23/02 , H01L23/28 , H03H3/08
CPC分类号： H03H9/1085 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05144 , H01L2224/05644 , H01L2224/16225 , H01L2924/00014 , H03H3/08 , H03H9/02937 , H03H9/059 , H01L2224/05099
摘要： PROBLEM TO BE SOLVED: To provide an electronic component which is excellent in humidity resistance, ensures electrical connection between electrodes and air-tightness to a sealed area including a vibrating part and further suppresses a large size. SOLUTION: The electronic component includes a vibrating part, a piezoelectric element comprising a first electrode and a wiring board comprising a second electrode on one side of a piezoelectric substrate, wherein the electronic component comprises a vamp provided on one side of the first electrode and the second electrode and connected to another side of the first electrode and the second electrode, an annular first metal layer surrounding the vibrating part, and soldering which is provided along with said first metal layer and of which a fixed phase line temperature is lower than that of the bump with a region, wherein the vibrating part is disposed, as an air-tight space by sealing the first metal layer and the wiring board. Thus, humidity permeation into the air-tight space and outward spreading of the soldering are suppressed and a bump melting and spreading space can be saved. Moreover, electrical connection between electrodes and sealing of the disposing region can be performed in other steps, thereby obtaining high air-tightness. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供耐湿性优异的电子部件，确保电极之间的电连接和包括振动部分的密封区域的气密性，并进一步抑制大尺寸。解决方案：电子部件包括振动部件，压电元件，包括第一电极和布线板，其包括在压电基板的一侧上的第二电极，其中电子部件包括设置在第一电极的一侧上的波峰电极和第二电极，并且连接到第一电极和第二电极的另一侧，围绕振动部分的环形第一金属层，以及与所述第一金属层一起设置并且固定相线线路温度较低的焊接比通过密封第一金属层和布线板的具有通过密封第一金属层和布线板的气密空间设置振动部的区域的突起的凸起。因此，抑制了进入气密空间的湿气渗透和焊接的向外扩散，并且可以节省凸块熔化和扩展空间。此外，电极之间的电连接和布置区域的密封可以在其他步骤中进行，从而获得高气密性。版权所有（C）2007，JPO＆INPIT

68. 发明专利

JP3844414B2 Surface acoustic wave device and a method for manufacturing the same 有权
公开(公告)号：JP3844414B2
公开(公告)日：2006-11-15
申请号：JP24452499
申请日：1999-08-31
申请人：パイオニア株式会社
发明人：綾子吉田 , 篤尾上 , 清文竹間
IPC分类号： H03H9/25 , H02N2/00 , H03H3/08 , H03H9/02 , H03H9/145
CPC分类号： H03H9/02574 , H03H3/08 , Y10T29/42

69. 发明专利

JP2006278870A Pottasium niobate deposit and its manufacturing method, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic device 有权
标题翻译：磷酸钙沉积及其制造方法，表面声波元件，频率滤波器，振荡器，电子电路和电子设备
公开(公告)号：JP2006278870A
公开(公告)日：2006-10-12
申请号：JP2005097976
申请日：2005-03-30
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： HIGUCHI AMAMITSU , KIJIMA TAKESHI , UENO MAYUMI
IPC分类号： H03B5/30 , C01G33/00 , H01L41/09 , H01L41/22 , H01L41/316 , H01L41/319 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/0542 , H01L41/0815 , H01L41/1873 , H01L41/319 , H03H3/08 , H03H9/02543 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a potassium niobate deposit having a thin film of potassium niobate and its manufacturing method. SOLUTION: The potassium niobate deposit 100 includes an R surface sapphire substrate 11, a buffer layer 12 formed on the R surface sapphire substrate 11 and consisting of a metal oxide, a lead zirconate titanate niobate (PZTN) layer 13 formed on the buffer layer 12, and a potassium niobate layer 14 or a potassium niobate solid solution layer formed on the lead zirconate titanate niobate (PZTN) layer 13. COPYRIGHT: (C)2007,JPO&INPIT

70. 发明专利

JP2006262435A Surface acoustic wave chip, surface acoustic wave device, and manufacturing method for the same 有权
标题翻译：表面声波芯片，表面声波装置及其制造方法
公开(公告)号：JP2006262435A
公开(公告)日：2006-09-28
申请号：JP2005266718
申请日：2005-09-14
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： AOKI SHINYA , AKAHA KAZUHIKO , MAEDA YOSHIO
IPC分类号： H03H9/145 , H03H3/08 , H03H9/25
CPC分类号： H03H9/059 , H03H3/08 , H03H9/1092
摘要： PROBLEM TO BE SOLVED: To provide a surface acoustic wave chip with structure suitable for miniaturization, surface acoustic wave device, and manufacturing method for the same including an efficient protecting film forming means.
SOLUTION: In the surface acoustic wave chip, surface acoustic wave device and manufacturing method for the same, the surface acoustic wave chip 31 is provided which is formed with an inter-digital transducer 33 entirely over a piezoelectric substrate, wherein the inter-digital transducer is extended to a rim of the piezoelectric substrate 32, including an embodiment where a pattern 71 for protecting film formation constituted of at least a part of an extended electrode pattern is provided, and in the rim of the piezoelectric substrate, a partition section 35 for partitioning the electrode pattern is provided so as to reach the rim of the piezoelectric substrate so that the inter-digital electrodes form a pair.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有适合于小型化的结构的表面声波芯片，表面声波器件及其制造方法，其包括有效的保护膜形成装置。解决方案：在表面声波芯片，表面声波器件及其制造方法中，提供在整个压电基片上形成有数字式换能器33的表面声波芯片31，其中，数字换能器延伸到压电基板32的边缘，包括设置用于保护由至少一部分延伸的电极图案构成的成膜的图案71的实施例，并且在压电基板的边缘中，提供用于分隔电极图案的部分35以到达压电基板的边缘，使得数字间电极形成一对。版权所有（C）2006，JPO＆NCIPI

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