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61. 发明专利

JPH11102894A METHOD AND DEVICE FOR DRY ETCHING 失效
公开(公告)号：JPH11102894A
公开(公告)日：1999-04-13
申请号：JP26132697
申请日：1997-09-26
申请人： HITACHI LTD
发明人： IZAWA MASARU , TAJI SHINICHI , YOKOGAWA KATANOBU , YAMAMOTO SEIJI , NEGISHI NOBUYUKI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain high selectivity ratio on a film of high aspect ratio by a method wherein two or more plasma regions, having different electron temperatures are formed, and the quantity of formed ions and the F with respect to CF2 are controlled independently. SOLUTION: Quantity of ions formed is determined by the electron density in plasma, and the electron density is substantially proportional to the high frequency power to be inputted. Since the dissociation of F/CF2 is generated by the collision of gas molecules and electrons and the electron density depends on high frequency power, the ratio of formation of F/CF2 can be controlled independently of the quantity of ions formed. In a device using an electron cyclotron resonance ECR, a high electron temperature region 103 is formed in an ECR region and a low electron temperature region 102 is formed on the part other than the region. Since the high electron temperature region widens when the gradient of magnetic field is small, the ratio of formation of F/CF2 becomes small, and when the gradient of magnetic field is made larger, the high electron temperature region becomes narrow. As a result, the ratio of formation of F/CF2 can be made larger, and the processing of a microscopic and deep oxide film becomes possible.

62. 发明专利

JPH1197415A METHOD AND EQUIPMENT FOR DRY ETCHING 失效
公开(公告)号：JPH1197415A
公开(公告)日：1999-04-09
申请号：JP33443896
申请日：1996-12-02
申请人： HITACHI LTD
发明人： IZAWA MASARU , TAJI SHINICHI , HAMAZAKI RYOJI , KAWAHARA HIRONORI , KAWASAKI YOSHINAO , TSUJIMOTO KAZUNORI , KURE TOKUO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To prevent a foreign matters from generating and improve dimensional accuracy of wiring, by etching by supplying a subject with oxygen and carbon so as to have the ratio of the number of oxygen atoms to the number of carbon atoms at a specific limited value. SOLUTION: A region 102 is a region where foreign particles are generated and a range 103 is a ranged of an oxygen/carbon incidence ratio within the tolerance of deviation from a mask size. A curve 101 showing a side etching quantity increases with the increase of the oxygen/carbon ratio. Though the process accuracy depends on the pattern size, it is necessary to reduce the oxygen/carbon ratio to be smaller than a fixed value in order to obtain a sufficient process accuracy, which is approximately over 0% but not more than 10%. When the oxygen/carbon ratio is reduced, the side etching quantity is reduced. However, when it is close to the oxygen-free state, as the deposition of resist, etc., is not suppressed, it deposits in the etching equipment and induces problems of foreign matters and particles. The side etching quantity is reduced by reducing the oxygen/carbon ratio within a range where foreign material, particles, etc., are not generated.

63. 发明专利

JPH10163171A METHOD AND DEVICE FOR DETECTING NEUTRAL CHEMICAL SHEED 失效
公开(公告)号：JPH10163171A
公开(公告)日：1998-06-19
申请号：JP31591296
申请日：1996-11-27
申请人： HITACHI LTD
发明人： YAMAMOTO SEIJI , TAJI SHINICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To detect an end point with high accuracy by retarding ions which become obstacles to the analysis, and negatively ionizing neutral chemical species softly, and mass-separating the produced negative ions for separation. SOLUTION: Xe gas is introduced from a gas introduction part 112 so as to produce xenon in very high excitation state by the shock of electrons emitted from a filament. A concentric grid hinders electrons or Xe ions from penetrating the center collision area. The xenon and the neutral chemical species of a reactive product collide against each other, and become Xe and product negative ions. Together with the start of etching, the strong signal of SIF3 is observed, but about one minute later equivalent to the time of etching SiO2 by 1μm, the signal intensity begins to decrease, and then the signal intensity is settled to about one fourtieth as high as initial one.

64. 发明专利

JPH09321031A PLASMA TREATING APPARATUS 失效
公开(公告)号：JPH09321031A
公开(公告)日：1997-12-12
申请号：JP30003996
申请日：1996-11-12
申请人： HITACHI LTD
发明人： YOKOGAWA KATANOBU , ITABASHI NAOSHI , TAJI SHINICHI , MORI MASASHI , SUZUKI KEIZO , ONO TETSUO
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To generate a highly uniform magnetic field-having microwave plasma by feeding a an electromagnetic wave from a power source to a flat conductor board to radiate an electromagnetic wave for forming a plasma from the conductor board. SOLUTION: An electromagnetic wave for forming a plasma is fed to a circular graphite conductor board 107 from a UHF band power source 104 through a coaxial line 103. The conductor board 107 is formed through a dielectric 106 on a ground potential conductor board 105 to form a microstrip line resonator owing to which a high frequency current flows at high efficiency on the circular conductor board to radiate an electromagnetic wave in air at the plasma side, thus forming a plasma of raw material gas by the mutual reaction of the electromagnetic wave radiated from the board 107 with a magnetic field caused by an air core coil 102.

65. 发明专利

JPH0817796A METHOD AND APPARATUS FOR DRY ETCHING AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0817796A
公开(公告)日：1996-01-19
申请号：JP14601494
申请日：1994-06-28
申请人： HITACHI LTD
发明人： IZAWA MASARU , KUMIHASHI KOSEI , OJI YUZURU , TSUJIMOTO KAZUNORI , TORII KAZUNARI , TAJI SHINICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To stabilize the form of a deep groove and its processing by performing dry etching, increasing the density of ion current with the processing time of a substance to be processed with a processing gas. CONSTITUTION:A wafer 6 is put on a sample table in vacuum processing chamber 1, and is processed by etching with gas plasma. Namely, etching for a trench construction of an Si wafer is performed with an SiO2 mask so as to form a trench construction having a width of 0.3mum. First of all, microwave power is made to be 500W so that the density of ion current may be about 8mA/cm . Next the power control of a microwave generator is performed by a computer as the aspect ratio of an etching pattern becomes large. When etching is performed making the initial value of the microwave power 500W, the microwave power rises with time. When the etching is continued by making the microwave power 3,000W, the aspect ratio advances up to 60, and the ion current density becomes 30mA/cm .

66. 发明专利

JPH07147270A FORMATION OF PATTERN AND PATTERN FORMATION DEVICE 失效
公开(公告)号：JPH07147270A
公开(公告)日：1995-06-06
申请号：JP29637393
申请日：1993-11-26
申请人： HITACHI LTD
发明人： KUMIHASHI KOSEI , IZAWA MASARU , TAJI SHINICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/76
摘要： PURPOSE:To realize the formation of deep hole patterns or deep groove patterns, whose working rate does not depend on the aspect ratios of the patterns, when a plurality of the deep hole patterns or the deep groove patterns of the different aspect ratios are formed in the same process. CONSTITUTION:When a plurality of patterns of different aspect ratios are formed in the same process, the maximum working rate R'max on the bottom of the pattern of the maximum aspect ratio, which is determined by four conditions of (1) gas species (mass (m)), (2) the kind of a material to be treated (the density (n) of the number of atoms), (3) the largest aspect ratio (A) of the patterns and (4) the pressure P of gas, is found according to the following formula (6) and the formation of the pattern is performed at a working rate less than this rate. R'max=P/sq. rt. (2pimkT)/n/(3muA+1)...(6). Accordingly, as the dependence of the working rate on the aspect ratios is eliminated, the formation of high-accuracy patterns of a high aspect ratio, which does not raise a problem to say that the working rate on the bottom of the pattern of the high aspect ratio becomes extremely slow or a base layer of the bottom of the pattern of the low aspect ratio is scraped, can be performed.

67. 发明专利

JPH0750395A SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0750395A
公开(公告)日：1995-02-21
申请号：JP19582993
申请日：1993-08-06
申请人： HITACHI LTD
发明人： MIKI HIROSHI , OJI YUZURU , TAJI SHINICHI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To enable a semiconductor memory device to be enhanced in degree of integration and lessened in manufacturing cost by a method wherein a crystalline insulating film is interposed between a lower electrode and an upper electrode, and a crystalline insulating film is made to extend over an insulating film whose surface is modified on a region outside the lower electrode. CONSTITUTION:An insulating film formed on a semiconductor layer on which a device used for driving a capacitor is formed and a lower electrode 104 of prescribed shape formed on a specific region of the insulating film are provided. A crystalline insulating film 102 continuously formed on both the exposed surface of the insulating film and the lower electrode 104 and an upper electrode 101 built on the crystalline insulating film 102 are provided. The part of the insulating film where the lower electrode 104 is not present has a modified surface, and the crystallinity and the dielectric constant of the crystalline insulating film 102 formed on the modified surface of the insulating film are smaller than those of the film 102 formed out the lower electrode 104 respectively.

68. 发明专利

JPH05304116A 失效
公开(公告)号：JPH05304116A
公开(公告)日：1993-11-16
申请号：JP17685491
申请日：1991-07-17
申请人： HITACHI LTD
发明人： TAJI SHINICHI , TSUJIMOTO KAZUNORI , OKUDAIRA SADAYUKI , MUKAI KIICHIRO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H05H1/18 , H05H1/46
摘要： PURPOSE:To etch a deep groove at high accuracy by controlling the temperature of a sample stage mounting a sample to be etched at a specific level through combination of heating means and cooling means. CONSTITUTION:A sample to be etched mounted on a sample stage 7 in a vacuum chamber 1 is controlled, in temperature, between -10 deg.C and -160 deg.C by means of a heater 9 and refrigerant 10 through control of output from a thermocouple 18. Gas plasma is generated by supplying gas through a gas supply port 4 and applying high frequency power 11 and gas plasma thus generated is employed for etching the sample 8 mounted on the sample stage 7. Temperature is controlled by operating a refrigerant supply control system 23 and a heater power supply 12 through an output detector 19 for the thermocouple 18 and a feedback mechanism 22. The sample 8 thus etched is transferred into a post-processing chamber 2 where it is subjected to heating through a heating mechanism 15 on a silicon base 16. This system realizes high speed etching, shortening of deep groove etching time of single crystal silicon, and reduction of the number of steps.

69. 发明专利

JPH05234959A 失效
公开(公告)号：JPH05234959A
公开(公告)日：1993-09-10
申请号：JP20597491
申请日：1991-08-16
申请人： HITACHI LTD
发明人： KUMIHASHI KOSEI , TSUJIMOTO KAZUNORI , TAJI SHINICHI
IPC分类号： C23F4/00 , G03F7/36 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213
摘要： PURPOSE:To provide a dry etching method by which selective etching can be performed depending upon materials at a high selection ratio during a semiconductor manufacturing process. CONSTITUTION:Selective etching can be performed by controlling the mass of incident ions in accordance with the constituent elements of a material to be etched and another material not to be etched, by making larger the mass difference between the constituent elements of the material to be etched and another material not to be etched, and additionally providing a hot spot temperature measuring and controlling means to a dry etching system.

70. 发明专利

JPH0555514A SEMICONDUCTOR DEVICE AND FABRICATION THEREOF 失效
公开(公告)号：JPH0555514A
公开(公告)日：1993-03-05
申请号：JP21689191
申请日：1991-08-28
申请人： HITACHI LTD
发明人： MIKI HIROSHI , OJI YUZURU , TAJI SHINICHI , KANEBORI KEIICHI
IPC分类号： H01L27/10 , C23C16/40 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
摘要： PURPOSE:To provide a semiconductor device including a thin uniform dielectric film without the influence of an interface even in such a thin film and further including a miniature greater capacity condenser by employing as a thin film deposition raw material an organic molecule containing a plurality of kinds of metal atoms which are involved in a film composition. CONSTITUTION:An attached figure illustrates an exempraly structure of a complex metal organic compound. Herein, M denotes any one among lead, zirconium and titanium atoms, R denotes an organic group comprising carbon, nitrogen, and oxygen, and 0 denotes an oxygen atom. The two Ms in the compound illustrated in (a) of the figure comprises three kinds: lead and zirconium, and titanium, and titanium and lead. The two Ms among the four Ms in (b), (c), (d), and (e) are lead, and the remaining two Ms are any pair of zirconium and titanium, zirconium and zirconium. and titanium and titanium. Hereby, an atomic number ratio of different atoms included in a raw material is determined, so that there is specified the composition of an interface of matter to be deposited and a dielectric substance without depending upon the surface state, temperature and material of the matter to be deposited.

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