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61. 发明专利

JPS57110072A SNUBBER CIRCUIT FOR GATE TURN-OFF THYRISTOR 失效
公开(公告)号：JPS57110072A
公开(公告)日：1982-07-08
申请号：JP18383180
申请日：1980-12-26
申请人： HITACHI LTD
发明人： HORIE SATORU , FUKUI HIROSHI , YAO TSUTOMU , NAGANO TAKAHIRO
IPC分类号： H02M1/06 , H03K17/732
摘要： PURPOSE:To enhance the maximum breakdown current of a GTO (gate turn-off thyristor) by connecting a circuit having a series circuit of a parallel connection of a diode and a resistor and a capacitor to a plurality of GTOs in parallel with each other. CONSTITUTION:An anode current flowing thrugh a CTO1 is branched to two stes of snubber circuits when the GTO1 is turned OFF. The charging currents of the respective snubber circuits are equal to each other. The surge voltage becomes Lldi/dt by a wiring inductance Ll. The anode current of the GTO1 can be largely increased while maintaining the surge current sufficiently lower than the surge voltage of the breakdown limit of the GTO1 as compared with the case of the snubber circuit of a set of twice capacities of the current capacity of the resistors 31, 32 and diodes 21, 22 and the capacity of the capacitors 41, 42.

62. 发明专利

JPS56152263A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56152263A
公开(公告)日：1981-11-25
申请号：JP5434580
申请日：1980-04-25
申请人： HITACHI LTD
发明人： OONUKI HITOSHI , TENNO HIROSHI , MORITA KEIICHI , YAO TSUTOMU , NAITOU MASAMI , BABA NOBORU , ONODERA KIYUUKICHI , NAGANO TAKAHIRO , SATOU FUMIO , YANAGI MITSUO
IPC分类号： H01L29/41 , H01L21/331 , H01L29/73 , H01L29/744
摘要： PURPOSE:To obtain the pressure welding electrode of a GTO having small contact resistance and no short-circuit accident across gates and cathodes by adhering and fixing the electrode and a metal plate through an intermediate layer consisting of an AlSi alloy. CONSTITUTION:The second main electrode 8 and the second metal plate 10 are blazed by Al under an Si substrate 1 formed n type emitters 2, an n type base 4, a p type emitter 5, and a p type base 3. SiO2 films 11, Al evaporated cathode electrodes 6, and gate electrodes 7 are formed on the main surface of a semiconductor layer at the opposite side of the Si substrate 1. An Si film 12 having 5% Al is evaporated on a metal plate 9 consisting of W to place the film 12 on the cathode electrodes 6 for heating and pressure welding. Load will equally be applied as the emitter electrodes and the metal plate 9 are equally adhered and a gate turn-off thyristor (GTO) having no short-circuit across the gates and the cathodes will be obtained.

63. 发明专利

JPS56130969A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56130969A
公开(公告)日：1981-10-14
申请号：JP3334580
申请日：1980-03-18
申请人： HITACHI LTD
发明人： YAO TSUTOMU , NAITOU MASAMI , NAGANO TAKAHIRO , YASUDA TOMIROU , OONUKI HITOSHI , YANAGI MITSUO , SATOU FUMIO
IPC分类号： H01L29/74 , H01L23/492
摘要： PURPOSE:To enhance the reliability of a semiconductor device and to improve the productivity thereof by forming a gate electrode plate of low resistance making contact with a gate electrode, integrating the gate electrode plate and the cathode electrode via an insulator and confronting it with a semiconductor substrate. CONSTITUTION:An electrode plate 100 is formed by integrating a cathode electrode plate 101 in which a load current flows in contact with a cathode electrode 6 with a gate ring 102 in which a gate current flows in contact with a gate electrode 7'. A low heat expansion coefficient glass 103 is filled between the electrode plates 101 and 102. The plate 100 and the substrate 1 are pressurized and contacted, and contacted at the n type emitter 5 and the projection 40 of a p type base.

64. 发明专利

JPS55125076A OPTICAL IGNITION SYSTEM FOR THYRISTOR 失效
公开(公告)号：JPS55125076A
公开(公告)日：1980-09-26
申请号：JP3233779
申请日：1979-03-22
申请人： HITACHI LTD
发明人： KONISHI TOBUTAKE , YAO TSUTOMU , AMANO HISAO
IPC分类号： H02M1/092 , H03K17/78
摘要： PURPOSE:To lead LED light efficiently to optical fibers and thus to improve reliability of a general ignition system by arranging a band fiber consisting of plural optical fibers along an optical axis of the beam of light emitted from LED. CONSTITUTION:One end of a bundling optical fiber 30 which corresponds to an LED luminous face is arranged along an optical axis 200 of the beam of light emitted from the luminous face and also arranged so as to correspond to the major part of the luminous face. The fiber 30 branches to plural fibers on the way, and the branching fibers correspond to a light receiving part of each light driving thyristor.

65. 发明专利

JPS5586154A REVERSEECONDUCTING THYRISTOR 失效
公开(公告)号：JPS5586154A
公开(公告)日：1980-06-28
申请号：JP15858678
申请日：1978-12-25
申请人： HITACHI LTD
发明人： SHIMIZU YOSHITERU , YAO TSUTOMU
IPC分类号： H01L29/74 , H01L29/747
摘要： PURPOSE:To reduce both on-voltage and turn-off time by forming a thyristor and an anti-parallel-connected diode in the same semiconductor substrate and making Au concentration gradient in the junction between the base and emitter of the thyristor flat when Au is diffused here. CONSTITUTION:An n-type epitaxial layer is grown on one part of an i-type Si substrate, and a p-type impurity for forming a p-type emitter and a p-type base is deposited on the front and back surfaces of the substrate. Next, by operating heat treatment, a p-type emitter layer and a p-type base layer are formed by diffusion in the i-type substrate and the n-type epitaxial layer. An n-type emitter layer is formed by diffusion in the p-type base layer. The composite element of a thyristor and a diode obtained in this way is diffused with Au which is to become lifetime killer. Thus, on-voltage and turn-off time are reduced. At this time, the Au concentration in the junction between the base and emitter of the thyristor is reduced, and at the same time its gradient is made flat.

66. 发明专利

JPS54113272A THYRISTOR 失效
公开(公告)号：JPS54113272A
公开(公告)日：1979-09-04
申请号：JP1964978
申请日：1978-02-24
申请人： HITACHI LTD
发明人： WATANABE TOKUO , YAO TSUTOMU
IPC分类号： H01L29/74 , H01L29/08
摘要： PURPOSE:To extend a conductive region, which is ignited by a gate signal, without interference to improve a switching speed by burying an emitter layer in a shorted hole in the thyristor having a shorted emitter structure. CONSTITUTION:P-type impurity is diffused from the surface and the reverse face of N-type Si substrate 2 to be a base layer, and P-type emitter layer 3 and P-type base layer 4 are formed, and PN junctions J1 and J2 are generated in these layers respectively. Next, N-type emitter regions 5 are formed between N-type emitter regions 5 respectively in layer 4 by diffusion, and further, N-type emitter regions 20 are formed additionally between these regions 5 respectively by diffusion. After that, Al anode electrode 6 and gate electrode 8 are fitted to the reverse face of layer 3 and the exposed surface of layer 4 respectively, and further, cathode electrode 7 which covers regions 5 and 20 and becomes short-circuit 10 is fitted. Thus, when the thyristor is turned on by gate trigger and conduction extends in the transversal direction, this extension is not stopped to improve a switching characteristic because N-type emitter region 20 exists.

67. 发明专利

JPS5483385A THYRISTOR 失效
公开(公告)号：JPS5483385A
公开(公告)日：1979-07-03
申请号：JP15046377
申请日：1977-12-16
申请人： HITACHI LTD
发明人： YAO TSUTOMU , WATANABE TOKUO , OKAMURA MASAHIRO
IPC分类号： H01L29/74 , H01L29/10
摘要： PURPOSE:To obtain a highly pressure-resistant and large-current thyristor, by determining, in a thyristor of the PNPN 4-layer construction, seat resistance at the bottom of the P-type base layer and that in the vicinity of the region where the gate electrode is to be fitted. CONSTITUTION:P-type emitter layer PE, N-type base layer NB, P-type base layer PB and N-type emitter layer NE, which are mutually different in the conduction type, are provided between the top surface 112 and bottom surface 111 of semiconductor substrate 11; and PN junctions J1, J2, and J3 are formed between the respective layers. Further, W anode electrode 12, which also serves as a support plate, is fitted on the surface of the PE layer, Al cathode electrode 13 on the surface of the NE layer, and Al gate electrode 14 at the center of top surface 112. The NE layer is perforated with many holes 15; and through these perforations, a part of the PB layer is exposed. The top surface of the exposed layer is placed in low-resistance contact with electrode 13. In this constitution, the seat resistance of the PE layer region located at the bottom of the NE layer is determined at 500 OMEGA/square and the seat resistance in the vicinity of the location of gate electrode 14 is determined at 100 to 200 OMEGA/square.

68. 发明专利

JPS5456775A THYRISTOR 失效
公开(公告)号：JPS5456775A
公开(公告)日：1979-05-08
申请号：JP12323577
申请日：1977-10-14
申请人： HITACHI LTD
发明人： YAO TSUTOMU , MONMA NAOHIRO , NAITOU MASAMI , OKAMURA MASAHIRO
IPC分类号： H01L29/10 , H01L29/74
摘要： PURPOSE:To increase the dielectric strength as well as to secure a large current conversion capacity, by giving a deep diffusion with the impurity density of under 8X10 atom/cm for the P-type base layer of the N-type emitter layer side and prescribing the sheet resistance to 500-1500OMEGA/square. CONSTITUTION:Layers PE, NB, BP and NE whose conduction types differ from each other are laminated between main surface 11 and 12 of semiconductor substrate 1, and PN-junction J1, J2 and J3 are formed between thses layers. Then anode electrode 2 composed of the W supporter panel is coated to PE layer on one main surface 11, and Al cathode electrode 3 is coated to NE layer of the other main surface 12 respectively. Furthermore, gate electrode 4 is provided at the center part of PB layer, and part of PB layer is pierced partially through by NB layer to be exposed on surface 12 and then to be connected to electrode 2. In such constitution, the impurity density is set to 3-5X10 atom/cm near junction J3 of PB layer with the thickness of 90-110mum, and the sheet resistance is set to 600-1000OMEGA/square right under junction J3.

69. 发明专利

JPS5446488A THYRISTOR 失效
公开(公告)号：JPS5446488A
公开(公告)日：1979-04-12
申请号：JP11212377
申请日：1977-09-20
申请人： HITACHI LTD
发明人： WATANABE TOKUO , YAO TSUTOMU
IPC分类号： H01L29/744 , H01L29/08 , H01L29/74
摘要： PURPOSE:To improve remarkably switching characteristics of the part confronting to a gate electrode, by providing a priority conduction region into a conductive region expanding horizontally. CONSTITUTION:In the wafer in a PENBPBNE four-layer structure, NE layer possesses short path 10, through which the PB layer and cathode electrode 2 are shorted. A voltage is applied between anode 3 and cathode 2 with anode 3 made positive in potential, and while the voltage is cut off, a voltage is applied between gate 4 and electrode 2 with the gate made positive in potential. At this time, the only region close to the gate conducts first, and then expands horizontally. Polarity conduction region 5, whose PB layer is made thick, has high horizontal resistance and the current amplification factor of the NEPBNB-layer part is also large, so that it will become conductive rapidly. In addition, the time when the conductive region expands is shortened, and a rise in temperature is also suppressed by 10%.

70. 发明专利

JPS5295990A PHOTO RECEIVER OF SEMICONDUCTOR 失效
公开(公告)号：JPS5295990A
公开(公告)日：1977-08-12
申请号：JP1230976
申请日：1976-02-09
申请人： HITACHI LTD
发明人： YOKOTA TAKESHI , KONISHI TOBUTAKE , YAO TSUTOMU
IPC分类号： H01L29/74 , H01L29/86 , H01L31/10 , H01L31/111
摘要： PURPOSE:To obtain a photo thyristor with high sensitivity by thinning the part which is far from the external P-sheet of a N-sheet between PNPN structure and by turning a surface of this part into a photo signal reflex surface.

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