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61. 发明专利

JPS63310139A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPS63310139A
公开(公告)日：1988-12-19
申请号：JP14639787
申请日：1987-06-12
申请人： HITACHI LTD
发明人： SAWARA KUNIZO , KURODA SHIGEO , OTSUKA KANJI , TAKENAKA TAKATSUGU , OGURO TAKAHIRO , SOGA TASAO , YAMADA TAKEO , SAITO TOSHIYA
IPC分类号： H01L23/12 , H01L21/60 , H01L23/02 , H01L23/34 , H01L23/52 , H01L25/00
摘要： PURPOSE:To enhance a mounting density of a semiconductor device by a method wherein a semiconductor chip is connected to a wiring layer of a carrier through a bump electrode and a resistor device is installed inside the wiring layer. CONSTITUTION:A semiconductor chip 1 is connected to a multilayer wiring layer 4 on a carrier 3A by using a bump electrode 2; the bump electrode 2 is installed in a nearly whole region of a main face of the semiconductor chip 1 ; a resistor device R is formed on a wiring part 11 of the multilayer wiring layer 4. Because the resistor device R is installed, a circuit constituted in the semiconductor chip 1 is matched to a characteristic resistance value of a wiring part on the carrier 3A, and when a signal is input to the semiconductor chip 1, it is not reflected. By this setup, because a space to install the resistor device R is not required substantially, it is made possible to enhance a mounting density of a semiconductor device.

62. 发明专利

JPS63263754A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63263754A
公开(公告)日：1988-10-31
申请号：JP9734387
申请日：1987-04-22
申请人： HITACHI LTD
发明人： SAITO TOSHIYA , SATO TOSHIHIKO , OTSUKA KANJI , SAWARA KUNIZO , KURODA SHIGEO
IPC分类号： H01L23/538 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PURPOSE:To attain a reduction in heat resistance by a method wherein a semiconductor chip is attached to a multilayer interconnection board to be formed by forming a multilayer interconnection layer, using a vapor growth diamond film through the bump electrodes. CONSTITUTION:A multilayer interconnection layer 5, wherein a vapor growth diamond film 13 used as an interlayer insulating film, is laminated on a wiring board 2 through an insulating film 12 as the wiring board 2 of a microchip carrier and a multichip module. The layer 5 consists of a three-layer wiring 14, the wiring 14 is insulated by the film 13, conduction is made by through wirings 15 and opening parts 16 are protruded on the surface of the film 13 and bump electrodes 7 are formed of bump metal 17. As the film 13 is used for the interlayer insulating film in such a way, the heat to be generate from a semiconductor chip is favorably dissipated from the multilayer interconnection board side as well and the heat resistance in a semiconductor device can be reduced.

63. 发明专利

JPS63175450A HERMETIC SEAL TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63175450A
公开(公告)日：1988-07-19
申请号：JP597487
申请日：1987-01-16
申请人： HITACHI LTD
发明人： SAWARA KUNIZO , YAMADA TAKEO , KURODA SHIGEO
IPC分类号： H01L23/02 , H01L23/10
摘要： PURPOSE:To make it possible to perform a complete hermetic seal operation by a method wherein a mounting member and a metal film are directly contacted by providing the metal film on the mounting member and the thin metal film. CONSTITUTION:On the surface of the chip carrier 1 (mounting member) made of ceramic, a thin film 2 of multilayer structure, in which sheet-like polyimide and a prescribed metal wiring are alternately laminated, is provided. The wiring in said thin film 2 is connected to a number of bump electrodes 4, which are provided in array form on the surface exposed to the external part of the chip carrier 1, by the wiring 3 provided through the through hole formed in the chip carrier 1. An airtight sealing metal film 5 of the two-layer structure such as nickel (Ni) and gold (Au), for example, is provided on the outer circumferential part 2a of the thin film 2 and the surface 1a of the outer circumferential part of the chip carrier 1. As the metal film 5 is directly contacted to the surface of the chip carrier 1 as above-mentioned, the title semiconductor device can be hermetically sealed completely.

64. 发明专利

JPS63104453A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPS63104453A
公开(公告)日：1988-05-09
申请号：JP24963586
申请日：1986-10-22
申请人： HITACHI LTD
发明人： YAMADA TAKEO , OTSUKA KANJI , SAWARA KUNIZO , KONO AKIOMI , YAMADA TOSHIHIRO
IPC分类号： H01L23/12 , H01L23/14
摘要： PURPOSE:To realize the electrical conduction from one main face to the other main face of a substrate even when the interval between wiring parts is extremely small by a method wherein the wiring parts which are insulated electrically from a silicon substrate are formed on said substrate, two or more of said substrates are piled up by laying a coupling material between said unit substrate, and are heated and pressurized to form a laminated body of said substrates and said laminated body is cut in the direction to cross said wiring part so as to be laminar. CONSTITUTION:An insulating film 18 is formed on a silicon substrate 17, a wiring part 19 is formed on the assembly, aud, additionally, an insulating film 20 is formed on the assembly so that a unit substrate 16 can be formed. This unit substrate 16 is piled up one after another by laying a coupling material between said unit substrates. Then, this assembly is heated and pressurized to form a laminated body of said unit substrates 16. Said laminated body is cut in the direction to cross said wiring parts so as to be laminar; a main substrate is obtained; wiring parts 10, 13 and electrodes 12, 15 and the like are formed on said through main substrate by means of an ordinary method; a mother chip 2 is manufactured. It is, therefore, possible to form said wiring parts having an extremely small interval by means of the so-called lithographic technique.

65. 发明专利

JPS634645A SELECTIVE FORMATION OF CONDUCTOR FILM 失效
公开(公告)号：JPS634645A
公开(公告)日：1988-01-09
申请号：JP14689186
申请日：1986-06-25
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , OTSUKA KANJI , SAWARA KUNIZO , NIINA TOMOJI
IPC分类号： H01L21/285 , H01L21/3205
摘要： PURPOSE:To form a conductor film minutely with high accuracy by growing the conductor film onto the surface of a substrate through a chemical vapor growth method, heating the position of interest of the substrate, on which the conductor film is shaped, selectively through a method, in which a heater is arranged selectively, or a method, in which beams such as laser beams are projected optionally, or the like. CONSTITUTION:Aluminum films 4 are CVD-grown through chemical vapor growth (CVD) treatment, heating a substrate 1 selectively by using a heater 2. Since the rate of the CVD growth is affected by a reaction temperature, the growth rates of positions, where the substrate 1 is heated, are made remarkably larger than other sections, and the aluminum films 4 are grown at the positions, positions where there is the heater 2 on the rear. Since the heat of the heater 2 is not discharged to the surface in sections except predetermined pattern positions, to which windows 3a are bored, by a thin-film 3 on the growth, the aluminum films 4 are grown only on the surfaces of the substrate 1 further exposed to the windows 3a even in the positions where there is the heater 2 on the rear.

66. 发明专利

JPS62281453A CHIP CARRIER MODULE 失效
公开(公告)号：JPS62281453A
公开(公告)日：1987-12-07
申请号：JP12332986
申请日：1986-05-30
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , YAMADA TAKEO , SAWARA KUNIZO
IPC分类号： H01L23/08 , H01L23/12 , H01L23/15 , H01L23/16 , H01L23/52
摘要： PURPOSE:To enable reliability to be improved with excellent heat-conducting and heat-radiating properties and without chip cracks and disconnection of bump connecting parts being generated, by making respective parts specified by a base, frames, and a cap be composed of silicon carbide or the like and then jointing them in order by using brazing materials in working processes at temperatures from high to low. CONSTITUTION:Silicon-group flip chip semiconductor elements 2 are fixed by using bump electrodes 3 on a base 1 which is made of mullite or silicon carbide and whose rear surface is provided with surface-mountable external connection terminals 11. Cap-mounting frames 14 made of mullite or silicon carbide are raised on the base 1 by using brazing materials 15. A sealing flat plate-shaped cap 17 made of silicon carbide is mounted on the frames 14 by using brazing materials 16, with the rear surfaces of the said elements 2 being closely attached to the inner surface of the cap 17 by using joint materials 18. When a chip carrier module of such composition is assembled, a process of fixing the elements 2 on the base 1 by using the bump electrodes 3 and processes of jointing the frames 14 with the cap 17 and the base 1 by using respective brazing materials 16 and 15 are performed in their consecutive order at temperatures from high to low.

67. 发明专利

JPS62194653A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62194653A
公开(公告)日：1987-08-27
申请号：JP3510686
申请日：1986-02-21
申请人： HITACHI LTD
发明人： TAGUMA YUICHIRO , SAWARA KUNIZO , OTSUKA KANJI
IPC分类号： H01L23/40 , H01L23/373
摘要： PURPOSE:To dissipate heat generated from a semiconductor element from a radiation fin through adhesives containing an acicular magnetic material, to improve heat-dissipating properties, to operate the radiation fin as a cap in combination and to omit a process by using said adhesives and directly mounting the radiation fin to the semiconductor element through said adhesives. CONSTITUTION:Radiation fins 11 are fitted to the backs of semiconductor elements 5 and dams through adhesives 10 containing a magnetic material. Acicular magnetic materials, which have high thermal conductivity and acicular noses thereof are magnetized at an N (pole) and an S (pole), are scattered previously into the adhesives 10. A magnetic field is applied in the direction vertical to the direction of a base to be mounted before curing the adhesives 10, and the magnetic material 12 in the adhesives 10 is distributed as shown in the figure, thus ensuring thermal conductivity.

68. 发明专利

JPS6223118A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6223118A
公开(公告)日：1987-01-31
申请号：JP16186785
申请日：1985-07-24
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , TAKEO YOSHIHISA , SAWARA KUNIZO , KISHIKAWA NORIO
IPC分类号： H01L21/52 , H01L21/28 , H01L21/58 , H01L29/43
摘要： PURPOSE:To prevent a peeling of the interfaces between the base metal layer and the gold layer in the end surfaces of the semiconductor pellet, caused by the intrusion of a corrosive substance and so forth into the interfaces, by a method wherein the base metal layer on the back surface of the pellet consisting of an Si film is covered with the gold layer spreading so wide as to exceed the coated surface of the base metal layer. CONSTITUTION:A base metal layer 14 consisting of the first layer of chromium 12 and the second layer of copper 13 is adhered on the back surface of a semiconductor pellet 2 consisting of an Si film excluding the peripheral region. The base metal layer 14 is completely covered with a gold layer 5 which extends to the peripheral region of the back surface of the pellet 2. In the coated parts of the gold layer 15 on the peripheral region, gold-silicon eutectics are formed and the interfaces between the gold layer 15 and the back surface (Si film) of the pellet 2 vanish. Accordingly, this semiconductor device gets a structure that the base metal layer 14 is completely confined.

69. 发明专利

JPS61290742A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61290742A
公开(公告)日：1986-12-20
申请号：JP13187185
申请日：1985-06-19
申请人： HITACHI LTD
发明人： SAWARA KUNIZO
IPC分类号： H01L23/34 , H01L23/04
摘要： PURPOSE:To improve thermal connection between a package substrate and the cap and to reduce the thermal resistance of the package, by mounting the cap having projections which are able to contact with the package substrate, on the substrate using adhesive. CONSTITUTION:Projections 5a contacting with the package substrate 1 are formed at the four corners of the cap 5. The cap 5 is mounted to the periphery of the substrate 1 by adhesive 6, to constitute a package. At this time, heat is conducted from the pellet 2 through heat conductive material 9 contacting with it to the cap 5, and then is conducted effectively through the projections 5a of the cap 5 to the substrate 1. Thus the thermal resistance of the package can be reduced.

70. 发明专利

JPS61241956A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61241956A
公开(公告)日：1986-10-28
申请号：JP8250785
申请日：1985-04-19
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SAWARA KUNIZO , OTSUKA KANJI , FURUKAWA MICHIAKI , SATO TOSHIHIKO , OKUYA KEN , OKINAGA TAKAYUKI
IPC分类号： H01L23/50 , H01L23/498 , H05K3/34
摘要： PURPOSE:To improve the strength of outer leads, by fixing at least the parts of the outer leads in the vicinities of the side ends of a substrate mutually with insulating material, whose thermal expansion coefficient is approximate to the thermal expansion coefficient of silicon. CONSTITUTION:A semiconductor device comprises the following parts: a pellet attaching substrate 1, which is formed of a silicon carbide substrate; a pellet 2; and wires 4 made of gold and the like, which are electrically connected to a metallized wiring layer 3 that is deposited and formed on electrodes of the pellet 2 and the upper surface of the substrate 1. The pellet 2, the wires 4 and the like are sealed by a cap 6 comprising ceramics, which is attached to the upper surface of the substrate 1 with a bonding agent 5. One end of each outer lead 9 is connected and fixed to the wiring layer 3, which is deposited on the upper surface of the peripheral part of the substrate 1 by a gold-tin wax material. Low thermal-expansion-coefficient polyimide resin 8 is deposited on a part of the outer lead 9. The semiconductor device is mounted on a mounting substrate 10 through the other end of each outer lead 9. Thus the yield of stress at the connecting part of the substrate and the outer leads is prevented with temperature change occurs.

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