专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明专利

JPH08264150A FOCUSED ION BEAM APPARATUS AND FOCUSED ION BEAM IRRADIATING METHOD 失效
公开(公告)号：JPH08264150A
公开(公告)日：1996-10-11
申请号：JP6551195
申请日：1995-03-24
申请人： HITACHI LTD
发明人： ISHITANI TORU , ONISHI TAKESHI
IPC分类号： H01J37/08 , G01Q10/00 , H01J37/09 , H01J37/147 , H01J37/26 , H01J37/30
摘要： PURPOSE: To analyze defects of a fine semiconductor by providing specified values of necessary optical data of a focused ion beam apparatus (FIB). CONSTITUTION: An optical system of which the whole optical length from a tip end of an ion emitter, which is a liquid metal ion source 1 of Ga, to the surface of a specimen 10 is set to be 300-450mm, the distance from the ion source 1 to the center of a focusing lens 2 is set to be 14-45mm, and moreover the distance from the center of an objective lens 8 to the specimen 10 is set to be 10-40mm is mounted on a Ga-based FIB. Consequently, in a processing mode at the maximum current density Jmax >=15A/cm , the ion beam diameter Dp satisfies Dp =several pA and semiconductor analysis for 64 mega-bit DRM and 256 mega- bit DRA can be carried out.

62. 发明专利

JPH06295694A SCANNING TYPE PROBE WORK OBSERVING DEVICE 失效
公开(公告)号：JPH06295694A
公开(公告)日：1994-10-21
申请号：JP8044493
申请日：1993-04-07
申请人： HITACHI LTD
发明人： KAWANAMI YOSHIMI , ONISHI TAKESHI
IPC分类号： H01J37/22 , G01N23/22 , G01Q10/00 , G01Q30/04 , G01Q30/20 , H01J37/28 , H01J37/30 , H01J37/305
摘要： PURPOSE:To set a work area on a displayed sample image with constant high accuracy in spite of the size of the work area. CONSTITUTION:In a scanning type probe work observing device, an image observing, scanning address generating mechanism 9' selects only addresses by the number of two-dimensional pixels at constant intervals from the whole two dimensional addresses according to designation of magnification and a-shift, and generates a series of two-dimensional addresses, and carries out scanning by a probe. A sample image synthesizing converting mechanism 11 accumulates sample images read in from a sample image forming mechanism 10 together with the designation of magnification and a shift, and synthesizes them into a single sample image, and displays the synthesized sample image through a window of an image screen of a sample image display device 7 so as to be capable of being scrolled. As a result, a work area of the optional size can be set on a sample image in the whole area capable of being scanned by the probe with accuracy of constant scanning resolution, so that highly accurate work can be carried out.

63. 发明专利

JPH06267642A HEATING UNIT WITH BUILT-IN OPTICAL FIBER 失效
公开(公告)号：JPH06267642A
公开(公告)日：1994-09-22
申请号：JP5356293
申请日：1993-03-15
申请人： HITACHI LTD , HITACHI NUCLEAR ENG
发明人： ONISHI TAKESHI , KAWAMOTO KIKUO , ABE SHIGEKI
IPC分类号： F16L53/00 , G01K11/12 , H05B3/56
摘要： PURPOSE:To reduce a temperature measuring unit, to simplify the system, and to improve the control property, by detecting the heating temperature heated by a resistance element provided in parallel between two power source wires, by an optical fiber provided parallel to the power source wires. CONSTITUTION:To a belt form heating unit 1, AC power sources R and S are applied through two power source wires 3. This voltage is transmitted through the power source wires 3, and transmitted to resistance elements 4 provided in parallel to the wires 3 in the longitudinal direction, and a current according to the resistant value flows to heat the resistances 4. This temperature is detected by an optical fiber 2 provided parallel to the power source wires 3. The heating elements 3 and 4, and the optical fiber 2 are housed in a sheath member 5 and integrated. The optical fiber 2 can measure the peripheral temperature at 1m pitch, and by laying the the optical fiber 2 in the same route of the heating elements, the distribution of the temperature around the heating unit 1 in the longitudinal direction can be measured. Consequently, the temperature measuring unit can be reduced, and the control property can be improved.

64. 发明专利

JPH06231716A ION MICRO BEAM DEVICE 失效
公开(公告)号：JPH06231716A
公开(公告)日：1994-08-19
申请号：JP2097493
申请日：1993-02-09
申请人： HITACHI LTD
发明人： KAWAKAMI MEGUMI , ONISHI TAKESHI
IPC分类号： H01J37/22 , H01J37/28 , H01J37/30 , H01J37/317
摘要： PURPOSE:To provide an ion micro beam device capable of minimizing the contamination of a sample particularly by an ion beam in the photographing of a fine part, and highly precisely photographing the sample. CONSTITUTION:Image information is recorded in an image control part 17, its reproduced image is displayed on a cathode-ray tube 14, a photographing range is designated by using this by a photographing range designating part 18, and an SIM image is scanned with an optimum ion beam and photographed by a camera 19. Since the contamination quantity of a sample surface by the ion beam can be minimized at the time of setting the area for photographing a fine part, and a highly precise setting can be performed, this device is effective for the precise photographing of an important part.

65. 发明专利

JPH06215723A SAMPLE PROCESSOR USING CHARGED BEAM 失效
公开(公告)号：JPH06215723A
公开(公告)日：1994-08-05
申请号：JP733393
申请日：1993-01-20
申请人： HITACHI LTD
发明人： SATO HITOMI , ISHITANI TORU , ONISHI TAKESHI
IPC分类号： H01J37/22 , H01J37/30
摘要： PURPOSE:To facilitate the designation of a point of beam radiation at the time of processing either by displaying very small difference in the intensity of secondary electrons in terms of drastically different color or by displaying the intensity of the secondary electrons in terms of concentration of the color to display only a specific range of intensity by a color totally different from the entire gradation. CONSTITUTION:When a display color corresponding to the intensity of secondary electrons is designated by using a color lookup table CLT, a part where the variation in the intensity is very small, for example, when it varies from (i) to (j), the display colors of the CLT are designated so that distinct color variation such as red, blue, green, is displayed, namely, a:b:cnot equal to a':b':c'. After deep color gradation is designated when the intensity value of secondary electrons is large, or light color gradation when the value is small, the display colors that are only in a specific intensity range in which the intensity varies from (i) to (j), are replaced with a color B which is totally different from the entire color gradation. Even in a part where the variation in the intensity of secondary electrons is very small, or in a part where the part indicating variation is very small, they can be recognized on a CRT, and a point of radiation can thus be easily designated at the time of ion beam processing.

66. 发明专利

JPH05143927A RECORDING AND REPRODUCING SEPARATION TYPE MAGNETIC HEAD AND PRODUCTION THEREOF 失效
公开(公告)号：JPH05143927A
公开(公告)日：1993-06-11
申请号：JP30781891
申请日：1991-11-22
申请人： HITACHI LTD
发明人： TAKANO KOJI , ONISHI TAKESHI
IPC分类号： G11B5/265 , G11B5/39
摘要： PURPOSE:To match the positions of the recording track and reproducing track of the recording and reproducing sepn. type magnetic head with high accuracy. CONSTITUTION:The mark indicating the position of the reproducing track A of the recording and reproducing sepn. type magnetic head having a recording head part 30 for which an induction type element is used and a reproducing head part 10 for which an MR element is used is provided observably from the medium sliding surface side. This mark is formed in the reproducing head part 10 by a layer 18 provided with a notch 19 at the point matched with the reproducing track A. The recording and reproducing sepn. type magnetic head matched with the positions of the recording track and the reproducing track with the high accuracy is obtd.

67. 发明专利

JPH0574401A SCANNING TYPE SEMICONDUCTOR PROBE MICROSCOPE 失效
公开(公告)号：JPH0574401A
公开(公告)日：1993-03-26
申请号：JP23442891
申请日：1991-09-13
申请人： HITACHI LTD
发明人： TAKADA KEIJI , HIRUMA TAKEYUKI , ONISHI TAKESHI
IPC分类号： G01B7/34 , G01B7/00 , G01Q60/00 , G01Q60/16 , G01Q60/38 , G01Q60/54 , G01Q60/58 , G01Q70/08 , H01J37/28
摘要： PURPOSE:To measure a magnetic field, electric field and heat distribution on a sample surface with high resolution and quantitatively, and further even a surface shape of an insulative body with high resolution. CONSTITUTION:A micro-connection of a semiconductor 2 with an electrode 1 formed to manufacture a semiconductor element capable of measuring resistance of a semiconductor micro-part, and scanning is conducted with this element along a sample. Control of clearance between the semiconductor element and the sample is performed by a method of STM, TAM or the like. A resistance value of the semiconductor in accordance with a position of the semiconductor element on the sample is displayed so as to achieve the purpose.

68. 发明专利

JPH04340708A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH04340708A
公开(公告)日：1992-11-27
申请号：JP11285891
申请日：1991-05-17
申请人： HITACHI LTD
发明人： HIRUMA TAKEYUKI , ONISHI TAKESHI , KAKIBAYASHI HIROSHI , KATSUYAMA TOSHIO , YAZAWA MASAMITSU , HARAGUCHI KEIICHI
IPC分类号： H01L21/205 , H01L21/265
摘要： PURPOSE:To obtain a manufacturing method of semiconductor light emitting elements and semiconductor electronic elements which are used in the fields of communication and data processing and semiconductor elements which are used for the measurement of a minute region, and obtain apparatus containing the above elemenets. CONSTITUTION:On a substrate 1, a converged Ga ion beam 2 is projected, and then the substrate is heated in an element atmosphere, thereby growing GaAs crystal 4 on an ion-implanted part 3. The grown crystal is made a quantam box and GaAs quantum box laser is formed. Since the ion-implanted part can be formed on the substrate with interval and size smaller than or equal to 100nm by using an ion beam, the gain of GaAs quantum box can be increased.

69. 发明专利

JPH04282545A FOCUSING ION BEAM WORK METHOD 失效
公开(公告)号：JPH04282545A
公开(公告)日：1992-10-07
申请号：JP4640291
申请日：1991-03-12
申请人： HITACHI LTD
发明人： ONISHI TAKESHI , ISHITANI TORU
IPC分类号： H01J37/22 , H01J37/26 , H01J37/28 , H01J37/30 , H01L21/66
摘要： PURPOSE:To facilitate specifying a sample even when many FIB(focusing ion beam) work spots are provided on the same sample by working a character and a character of symbol for characterizing a work part in the vicinity of the FIB work spot. CONSTITUTION:In order to observe a section 3, containing AI wiring formed in an SiO2 film 2 on a silicon substrate sample 2, by a scanning electron microscope SEM, sectional work is applied to a plurality of spots by an FIB(focusing ion beam). Here, a character 4 of E6 is formed in the vicinity of a work part by the FIB1. Now, an alphabet E displays a sample, and a numeral 6 means sixth work point in the sample. Similarly, respectively different characters are worked in also the other section observing point on the sample. In this way, a desired observation spot can be efficiently specified and discriminated.

70. 发明专利

JPH04262354A CONVERGED ION BEAM PROCESSING DEVICE 失效
公开(公告)号：JPH04262354A
公开(公告)日：1992-09-17
申请号：JP2310191
申请日：1991-02-18
申请人： HITACHI LTD
发明人： ONISHI TAKESHI , ISHITANI TORU
IPC分类号： H01J37/22 , H01J37/28 , H01J37/30
摘要： PURPOSE:To make accurate location of the processing position even in case a device involves parts with extremely different secondary electron discharging rate within the observing field of view by providing a means to compress the secondary particle intensity logarithmically for imaging. CONSTITUTION:An ion beam emitted by a liquid metal ion source 100 is converged on a specimen 8 by a condenser lens 101 and an objective lens 107. Secondary electrons generated by the specimen 8 when it is irradiated with this converged ion beam (FIB) are sensed and amplified by a secondary electron sensor 7 and are synchronized with the deflection control to be displayed as a scan ion microscope image (SIM) on CRT 5 of a computer 4. A current signal emitted by the sensor 7 is connected either with a linear amplifier 2 or a logarithmic amplifier 1 through a changeover switch 6. Accordingly a SIM image as logarithmic indication of the secondary electron signal amount is obtained by turning the switch 6, which permits observing the shape of the device over the whole area of the screen. Thus the location of the processing position can be made accurately.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式