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61. 发明专利

JP2003178407A MAGNETO-RESISTANCE EFFECT TYPE HEAD, ITS MANUFACTURING METHOD, AND MAGNETIC RECORDING/REPRODUCING DEVICE 审中-公开
公开(公告)号：JP2003178407A
公开(公告)日：2003-06-27
申请号：JP2001376658
申请日：2001-12-11
申请人： HITACHI LTD
发明人： WATANABE KATSURO , KUSUKAWA KIKUO , MEGURO KENICHI
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/40 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce damage during patterning of a magneto-resistance effect sensor film, and failures caused by current leakage between upper and lower shields in a magneto-resistance effect type head of a CPP structure. SOLUTION: In the magneto-resistance effect type head of the CPP structure, at least a part of a boundary between a lower shield layer 10 and a nonmagnetic film 11 formed around it is covered with an insulating protective film 20, and an area of the lower shield layer exposed to the surface of a substrate during patterning of a magneto-resistance effect sensor film is reduced. COPYRIGHT: (C)2003,JPO

62. 发明专利

JP2002208682A MAGNETIC SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2002208682A
公开(公告)日：2002-07-26
申请号：JP2001004395
申请日：2001-01-12
申请人： HITACHI LTD
发明人： MATSUOKA HIDEYUKI , SAKATA TAKESHI , WATANABE KATSURO , ITO KIYOO
IPC分类号： G11C11/14 , G11C11/15 , G11C17/02 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/22 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To solve the problem of there being a difficult process for making a self-alignment contact opening by move around the word lines in a MRAM memory cell using a tunnel magnetic resistor and having a writing word line under a data line, and the data wiring thereby becomes unstable from a limitation of layout, in which the writing word line cannot be sufficiently overlapped with a magnetoresistive element in plane. SOLUTION: In the MRAM memory cell, the writing word line is formed above a bit line. Then, a process of forming a memory cell plug becomes simpler than in the conventional cases. By forming the writing word line at an upper part, a magnetic field from the writing word line affects the magnetoresistive element effectively in this layout, sot the writing becomes stable.

63. 发明专利

JP2001338409A MAGNETIC HEAD 失效
公开(公告)号：JP2001338409A
公开(公告)日：2001-12-07
申请号：JP2001070145
申请日：2001-03-13
申请人： HITACHI LTD
发明人： ARAI REIKO , KAWATO YOSHIAKI , WATANABE KATSURO
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect sensor in which a tunnel magneto-resistance effect film is used and Barkhausen noise is restrained and which has stability and to provide a reproducing head and a magnetic recording/ reproducing device using the magneto-resistance effect sensor. SOLUTION: This magneto-resistance effect sensor is provided with the tunnel magneto-resistance effect film, a pair of electrodes 18 for making an electric current pass through the magneto-resistance effect film in the film thickness direction and a magnetic flux guide 14 for guiding a magnetic flux from a recording medium face to the magneto-resistance effect film. In this sensor both the magnetic domain in the free layer of the tunnel magneto-resistance effect film and that in the magnetic flux guide are controlled at the same time.

64. 发明专利

JP2001077443A LAMINATE FILM FILM-FORMING DEVICE, MANUFACTURE OF MAGNETORESISTANCE SENSOR USING THE SAME, AND THE MAGNETORESISTANCE SENSOR 失效
公开(公告)号：JP2001077443A
公开(公告)日：2001-03-23
申请号：JP25259499
申请日：1999-09-07
申请人： HITACHI LTD
发明人： WATANABE KATSURO , MEGURO KENICHI , HAMAKAWA YOSHIHIRO
IPC分类号： G11B5/39 , C23C14/54 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To form a giant magnetoresistance effect magnetoresistance sensor film having satisfactory characteristics or a spin tunnel magnetoresistive sensor film by a method, where when a film formation is performed using at least one material in one film-forming process on a substrate, a laminated film film- forming device has a means changeable a potential in the substrate during the film formation. SOLUTION: A film-forming chamber 13 adjusts the output of a DC power supply 134 by a cathode controller 138 through a film-forming chamber control system 139 and controls the quantity of a material, an atomic cluster, which released from a target 132 through sputtering. In a film-forming chamber 14, a coil 140 is installed in the vicinity of a target 142 and power from an AC power supply 146 is fed to the coil 140 via a matching device 145, but by changing the output of the power supply 146 during film formation by an AC power programmable controller 147, potential in a plasma is changed during the time, when the film-formation is performed, whereby a potential in a substrate can be controlled.

65. 发明专利

JP2001056914A MAGNETIC HEAD AND MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JP2001056914A
公开(公告)日：2001-02-27
申请号：JP2000073927
申请日：2000-03-13
申请人： HITACHI LTD
发明人： NAKAMOTO KAZUHIRO , HOSHIYA HIROYUKI , KAWABE TAKASHI , TAKAHASHI HIROMASA , KIMURA HISASHI , WATANABE KATSURO , ISHIKAWA CHIAKI , TOTSUKA KO
IPC分类号： G11B5/39 , H01F10/00 , H01F10/06 , H01F10/08 , H01F10/32 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To realize a magnetic recording and reproducing device having high recording density and reduced deterioration of properties due to a short circuit between a magneto-resistance effect film and a magnetic shield layer even when a shield interval is narrowed. SOLUTION: This magnetic head has an upper shield layer 15, a lower shield layer 13 and a magneto-resistance effect film 14 disposed therebetween. One or both of the shield layer 15 and 13 are constituted of a high resistance film comprising a mixed film of ferromagnetic metal with an insulating material or a discontinuously laminated film formed by alternately laminating a multi- layered ferromagnetic metal layer and a multi-layered insulating material layer to reduce deterioration of properties due to a short circuit.

66. 发明专利

JP2000173020A MAGNETORESISTIVE EFFECT TYPE MAGNETIC HEAD 失效
公开(公告)号：JP2000173020A
公开(公告)日：2000-06-23
申请号：JP34134498
申请日：1998-12-01
申请人： HITACHI LTD
发明人： ARAI REIKO , WATANABE KATSURO , SOEYA SUSUMU
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To eliminate Barkhausen noise by providing a magnetization rotating ferromagnetic film with an antiferromagnetic film through a ferromagnetic film having low saturation magnetic flux density and suppressing the exchange coupling magnetic field and controlling the domain thereby enhancing the soft magnetic characteristics of a magnetoresistive effect film. SOLUTION: A second antiferromagnetic film 16 of NiO, a third ferromagnetic film 15 of NiFeNb, a second ferromagnetic film 13 of NiFe, a nonmagnetic conductive film 12 of Cu, a first ferromagnetic film 11 of CoFe, a first antiferromagnetic film 14 of CrMnPt of specified thickness are formed sequentially on a substrate 21 and patterned into a desired shape to compose a spin valve structure magnetoresistive effect film 10. The second ferromagnetic film 13 is subjected to domain control by the second antiferromagnetic film 16 through the third ferromagnetic film 15. In this regard, the third ferromagnetic film 15 weakens strong exchange coupling field with the first antiferromagnetic film 14 and facilitate magnetization rotation in the second ferromagnetic film 13.

67. 发明专利

JPH10294504A MAGNETO-RESISTANCE SENSOR 失效
公开(公告)号：JPH10294504A
公开(公告)日：1998-11-04
申请号：JP10422197
申请日：1997-04-22
申请人： HITACHI LTD
发明人： WATANABE KATSURO , MEGURO KENICHI
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/16 , H01F10/32 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance sensor which is excellent in the linearity and symmetry of its output waveform and has high sensitivity. SOLUTION: This sensor has a ferromagnetic thin film 14 and a ferromagnetic thin film 12 laminated across a nonmagnetic conductive film 13, and the direction of the magnetism of the ferromagnetic thin film 14 is fixed and the magnetism of the ferromagnetic thin film 12 rotates with an external magnetic field. The ferromagnetic thin film 12 consists of a ferromagnetic thin-film layer 121 with positive anisotropic magneto-resistance effect and a ferromagnetic thin-film layer 122 which has negative anisotropic magneto-resistance effect.

68. 发明专利

JPH09251619A MAGNETIRESISTIVE MAGNETIC HEAD AND MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JPH09251619A
公开(公告)日：1997-09-22
申请号：JP5881296
申请日：1996-03-15
申请人： HITACHI LTD
发明人： WATANABE KATSURO , MEGURO KENICHI , HAMAKAWA YOSHIHIRO , ARAI REIKO
IPC分类号： G11B5/39 , G11B5/02
摘要： PROBLEM TO BE SOLVED: To provide a magentoresisteve head of a spin valve structure improved in reproducing output, capable of stabilizing a longitudinasl bias magnetic field for suppressing Barkhausen noise and haling stable characteristics. SOLUTION: In this magnetaresistine of a spin valve structure, at the time of using a layer an Mn alloy at least partly having face-centered cubic crystals as an antiferromagnetic layer 145 and also a magnetic thin film cong, Co atoms as a fixed layer ferromagnetic film 14, a large exchange-coupled magnetic field can be obtained and the reproduce outputs is improved. Also similarly, by using as a longitudinal-biasing layer, a laminated film consisting of a layer of an Mn alloy at least partly having face-centered cubic crtstals and a magnetic thin film contg, Co atoms, the longitudinal boas field can be stabilized.

69. 发明专利

JPH09153205A MAGNETO-RESISTIVE MAGNETIC HEAD 失效
公开(公告)号：JPH09153205A
公开(公告)日：1997-06-10
申请号：JP31067995
申请日：1995-11-29
申请人： HITACHI LTD
发明人： WATANABE KATSURO , ARAI REIKO , OKADA TOSHIHIRO , NAKAMOTO KAZUHIRO , KAWABE TAKASHI
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistive magnetic head which additionally stabilizes the direction of the magnetization of longitudinal biasing layers disposed to impress a longitudinal bias magnetic field to a magneto-resistance effect film, is free from Barkhausen noises and is less fluctuated in reproducing characteristics. SOLUTION: The shape of the longitudinal biasing layers 24 arranged on both sides of the magneto-resistance effect film is formed to

70. 发明专利

JPH0997409A MAGNETORESISTIVE MAGNETIC HEAD AND MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JPH0997409A
公开(公告)日：1997-04-08
申请号：JP13796396
申请日：1996-05-31
申请人： HITACHI LTD
发明人： WATANABE KATSURO , TADOKORO SHIGERU , KAWABE TAKASHI , KAMIO HIROSHI , IMAGAWA TAKAO
IPC分类号： G11B5/012 , G11B5/39 , G11B5/55 , G11B5/596
摘要： PROBLEM TO BE SOLVED: To suppress Brakhausen noises while suppressing the degradation in coercive force by constituting a longitudinal bias impressing layer to be disposed in order to suppress the Barkhausen noises by a ground film and a hard magnetic thin film to be formed therein. SOLUTION: This magnetoresistive magnetic head has a magnetoresistance film 15 for transducing magnetical signals to electric signals by using a magnetoresistance effect, a pair of electrodes for passing signal currents to this magnetoresistance film 15 and the longitudinal bias impressing layer 24 for impressing longitudinal bias magnetic fields to this magnetoresistance film 15. This longitudinal bias impressing layer 24 has the ground film 252 consisting of a ferromagnetic thin film and a hard magnetic thin film 26 formed on this ground film 252. The longitudinal bias impressing layer 24 disposed to suppress the Barkhausen noises is composed of the ground film 252 consisting of the ferromagnetic thin film, the amorphous ferromagnetic thin film or antiferromagnetic thin film and the hard magnetic thin film 26 formed thereon in such a manner, thereby, the degradation in the coercive force is suppressed even if the longitudinal bias impressing layer 24 is formed on the magnetoresistance film 15, the bias film, etc.

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