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61. 发明专利

JP2005142299A Magnetic memory 审中-公开
标题翻译：磁记忆
公开(公告)号：JP2005142299A
公开(公告)日：2005-06-02
申请号：JP2003375984
申请日：2003-11-05
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , ENDO KEITARO , HIGO YUTAKA , HOSOMI MASAKATSU , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , SONE TAKESHI , YAMADA NAOMI , YAMAMOTO TETSUYA
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable magnetic memory that can surely perform recording to an objective magnetic storage element by improving the selectivity of recording to the element.
SOLUTION: A storage layer which holds information based on the magnetized state of a magnetic material is provided with magnetic storage elements 1, each of which is composed of a plurality of magnetic layers, and first and second wiring 5 and 6 intersecting each other. The magnetic storage elements 1 are respectively disposed near the intersections of the wiring 5 and 6. The angles θ between the axes of easy magnetization 60 of the elements 1 and the first wiring 5 are made different from those (α-θ) between the axes of easy magnetization 60 of the elements 1 and the second wiring 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种高度可靠的磁存储器，其可以通过提高对元件的记录选择性而可靠地对目标磁存储元件进行记录。解决方案：基于磁性材料的磁化状态保存信息的存储层设置有磁存储元件1，每个磁存储元件由多个磁性层组成，第一和第二布线5和6与每个磁体相交其他。磁存储元件1分别设置在布线5和6的交叉点附近。元件1的易磁化轴60与第一布线5之间的角度θ与轴之间（α-θ）不同元件1和第二布线6的易磁化60。版权所有（C）2005，JPO＆NCIPI

62. 发明专利

JP2005129858A Magnetic storage element and magnetic memory 有权
标题翻译：磁存储元件和磁记忆
公开(公告)号：JP2005129858A
公开(公告)日：2005-05-19
申请号：JP2003366337
申请日：2003-10-27
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , ENDO KEITARO , HIGO YUTAKA , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , SONE TAKESHI , YAMADA NAOMI , YAMAMOTO TETSUYA , HOSOMI MASAKATSU
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element that is constituted to reduce the power consumption required for recording information, and to provide a magnetic memory. SOLUTION: The magnetic storage element 1 has a storage layer 3 which holds information based on the magnetized state of a magnetic material and is composed of a plurality of magnetic layers 16 and 18. The element 1 is constituted by disposing a magnetization fixing layer 2 composed of a plurality of magnetic layers 12 and 14 on the storage layer 3 through a nonmagnetic layer 15, and selecting the saturation magnetization and film thicknesses of the magnetic layers 12 and 14 of the magnetization fixing layer 2 so that the layer 2 may generate magnetic fields at magnetic poles. The magnetic memory has magnetic storage elements 1 thus constituted, and first and second wiring 5 and 6 intersecting each other. The magnetic storage elements 1 are respectively disposed near the intersecting points of the first and second wiring 5 and 6. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供构成为减少记录信息所需的功耗并提供磁存储器的磁存储元件。解决方案：磁存储元件1具有存储层3，其存储基于磁性材料的磁化状态的信息，并且由多个磁性层16和18组成。元件1通过设置磁化固定通过非磁性层15在存储层3上由多个磁性层12和14组成的层2，并且选择磁化固定层2的磁性层12和14的饱和磁化强度和膜厚度，使得层2可以在磁极上产生磁场。磁存储器具有这样构成的磁存储元件1，第一布线5和第二布线6彼此交叉。磁存储元件1分别设置在第一和第二布线5和6的相交点附近。版权所有（C）2005，JPO＆NCIPI

63. 发明专利

JP2004146614A Magnetoresistance effect element and magnetic memory device 审中-公开
公开(公告)号：JP2004146614A
公开(公告)日：2004-05-20
申请号：JP2002310203
申请日：2002-10-24
申请人： Sony Corp , ソニー株式会社
发明人： HOSOMI MASAKATSU , OBA KAZUHIRO , HIGO YUTAKA , BESSHO KAZUHIRO , MIZUGUCHI TETSUYA , YAMAMOTO TETSUYA , ENDO KEITARO , KUBO SHINYA , SONE TAKESHI , NARISAWA KOSUKE , KANO HIROSHI
IPC分类号： G11C11/15 , H01F10/16 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element which can effectively reduce a coercive force Hc and its fluctuation, and can obtain a superior asteroid curve, and to provide a magnetic memory device MRAM including the magnetoresistance effect element as a memory device.
SOLUTION: This magnetoresistance effect element is composed based on a found fact that the fluctuation of the coercive force Hc considerably depends on the shape of the magnetoresistance effect element or a memory element. Namely, in the magnetoresistance effect element, at least a pair of ferromagntic layers 5, 7 are laminated by interposing an inner layer 6 so as to be opposed to each other, and by conducting a current in the direction perpendicular to laminated faces, a change of magnetoresistance can be obtained. Since the thickness of the peripheral part of the information recording layer or ferromagntic layer 7 is thinner than the thickness of the central part, the pinning effect of magnetization by the peripheral part can be reduced.
COPYRIGHT: (C)2004,JPO

64. 发明专利

JP2004039757A Magnetoresistive effect element and magnetic memory device 审中-公开
公开(公告)号：JP2004039757A
公开(公告)日：2004-02-05
申请号：JP2002192547
申请日：2002-07-01
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , HOSOMI MASAKATSU , MIZUGUCHI TETSUYA , OBA KAZUHIRO , YAMAMOTO TETSUYA , SONE TAKESHI , HIGO YUTAKA , KANO HIROSHI
IPC分类号： H01F10/16 , H01F10/30 , H01F10/32 , H01F41/18 , H01F41/26 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element by controlling fluctuation in the inverted magnetism of a magnetization-free layer, and also to provide a magnetic memory device which can acquire a wider margin of selective recording by utilizing this magnetoresistive effect element.
SOLUTION: A pair of ferromagnetic layers 5, 7 are provided in opposition with each other via an intermediate layer 6, and a change in magnetic resistance is obtained by supplying a current in perpendicular to the film surface. The one ferromagnetic layer is formed as the magnetization fixing layer 5, while the other ferromagnetic layer is formed as the magnetization-free layer. This magnetization-free layer 7 forms a magnetoresistive effect element 1 formed of a ferromagnetic material in which the absolute value of a magnetostrictive constant is 1.5 ppm or less. Moreover, a magnetic memory device is constituted by comprising using the magnetoresistive effect element 1 of this structure, word lines and bit lines.
COPYRIGHT: (C)2004,JPO

65. 发明专利

JP2004031605A Magnetoresistive element, magnetic memory device, and method for manufacturing the same 有权
公开(公告)号：JP2004031605A
公开(公告)日：2004-01-29
申请号：JP2002185164
申请日：2002-06-25
申请人： Sony Corp , ソニー株式会社
发明人： HOSOMI MASAKATSU , MIZUGUCHI TETSUYA , BESSHO KAZUHIRO , OBA KAZUHIRO , HIGO YUTAKA , YAMAMOTO TETSUYA , SONE TAKESHI , KANO HIROSHI
IPC分类号： G11C11/15 , H01F10/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To stabilize magnetic characteristics involving an excellent asteroid curve, high resistance variation rate, and coercive force reduction.
SOLUTION: In this magnetoresistive element, wherein a pair of ferromagnetic layers face each other with an intermediate layer in between them and a variation in magnetoresistance is achieved by carrying an electric current in the direction vertical to the layer surfaces, at least one of the two ferromagnetic layers has a crystalline ferromagnetic layer containing FeCoB or FeCoNiB. The crystalline ferromagnetic layer is formed by carystallizing a sputtered film containing FeCoB or FeCoNiB.
COPYRIGHT: (C)2004,JPO

66. 发明专利

JP2004022135A Magnetoresistive effect element and magnetic memory device 有权
公开(公告)号：JP2004022135A
公开(公告)日：2004-01-22
申请号：JP2002178963
申请日：2002-06-19
申请人： Sony Corp , ソニー株式会社
发明人： SONE TAKESHI , BESSHO KAZUHIRO , HOSOMI MASAKATSU , MIZUGUCHI TETSUYA , OBA KAZUHIRO , YAMAMOTO TETSUYA , HIGO YUTAKA , KANO HIROSHI
IPC分类号： G01R33/09 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11C11/15 , G11C11/16 , H01F10/324 , H01F10/3254 , H01F10/3277 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect (MR) element 1 which has good magnetic characteristics and a magnetic memory device which is provided with this MR element and has excellent writing/reading characteristics.
SOLUTION: The MR element 1 is formed by opposing a pair of ferromagnetic layers (a magnetization fixed layer 5 and a magnetization free layer) across an intermediate layer 6 and obtains a change in magnetoresistive effect by passing an electric current perpendicularly to the film plane, in which the standard resistance is 2,000 to 10,000 Ωnm
2 when the product of the specific resistance in passing the electric current to the film thickness direction of the magnetization free layer 7 and the film thickness is defined as the standard resistance. The magnetic memory device provided with such MR element 1 and bit lines and word lines holding the MR element 1 in-between in the thickness direction is formed.
COPYRIGHT: (C)2004,JPO

67. 发明专利

JP2003332651A Magnetoresistance effect element and its manufacturing method, and magnetic memory device 审中-公开
标题翻译：磁阻效应元件及其制造方法和磁记忆装置
公开(公告)号：JP2003332651A
公开(公告)日：2003-11-21
申请号：JP2002141045
申请日：2002-05-16
申请人： Sony Corp , ソニー株式会社
发明人： MIZUGUCHI TETSUYA , KANO HIROSHI , NARISAWA KOSUKE , HOSOMI MASAKATSU , BESSHO KAZUHIRO , YAMAMOTO TETSUYA , OBA KAZUHIRO , SONE TAKESHI , ENDO KEITARO , KUBO SHINYA , HIGO YUTAKA
IPC分类号： G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To suppress the occurrence of a variation in inversion magnetic field in a free layer of a magnetoresistance effect element and to enable the appropriate reading of information by a magnetic memory device using the magnetoresistance effect element, appropriately setting an etching depth when forming the magnetoresistance effect element. SOLUTION: The magnetoresistance effect element has a lamination structure wherein a fixed layer 23, a barrier layer 24 and a free layer 25 are piled in sequence on a substrate 4, and an external shape of the lamination structure is formed by etching from the upper side, and then a change in the direction of magnetization in the free layer 25 is used to record information. The etching depth during etching treatment is made shallower than a boundary face between the free layer 25 and the barrier layer 24, and it is made shallower than a boundary face between the barrier layer 24 and the fixed layer 25. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题为了抑制磁阻效应元件的自由层中的反转磁场的变化的发生，并且能够通过使用磁阻效应元件的磁存储器件适当地读取信息，适当地设置形成磁阻效应元件时的蚀刻深度。解决方案：磁阻效应元件具有层叠结构，其中固定层23，阻挡层24和自由层25依次堆叠在基板4上，层压结构的外部形状通过从然后使用自由层25中的磁化方向的变化来记录信息。蚀刻处理中的蚀刻深度比自由层25和阻挡层24之间的边界面浅，并且使其比阻挡层24和固定层25之间的边界面更浅。版权所有： C）2004，JPO

68. 发明专利

JP2015002281A 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド有权
标题翻译：存储元件，存储器件，存储元件和磁头的制造方法
公开(公告)号：JP2015002281A
公开(公告)日：2015-01-05
申请号：JP2013126388
申请日：2013-06-17
申请人：ソニー株式会社 , Sony Corp
发明人： OMORI HIROYUKI , HOSOMI MASAKATSU , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , G11B5/39 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08
摘要：【課題】トンネルバリア層とスピンバリア層の二つの酸化物膜を有する記憶素子において、保持特性の低下や記録電流の上昇を抑えながら、素子抵抗を下げ、低い書き込み電圧、および大きな磁気抵抗変化が得られるようにする。【解決手段】記憶素子は、膜面に垂直な磁化を有し、情報に対応して磁化の向きが変化される記憶層と、記憶層に記憶された情報の基準となる膜面に垂直な磁化を有する磁化固定層と、記憶層と磁化固定層の間に設けられる酸化物によるトンネルバリア層と、記憶層のトンネルバリア層に接する面とは反対側の面に接して設けられる酸化物によるスピンバリア層とを有する。そして所定の設定膜厚値で形成されるスピンバリア層内には、その一部に低抵抗領域が形成されているようにする。【選択図】図3
摘要翻译：要解决的问题：为了提供具有隧道势垒层和自旋阻挡层的两个氧化物膜的存储元件，其在抑制保持特性的劣化和记录电流的增加的同时降低元件电阻，由此实现低写入电压和大的磁阻变化。解决方案：存储元件包括：具有垂直于膜表面的磁化和对应于信息变化的磁化方向的记录层; 具有垂直于膜表面的磁化的磁化固定层作为存储在记录层中的信息的参考; 隧道势垒层，设置在记录层和磁化固定层之间，由氧化物形成; 以及与所述记录层的表面接触设置的自旋阻挡层，所述自旋势垒层位于与所述隧道势垒层接触的表面的相反侧，并且由氧化物形成。在以预定的设定膜厚度值形成的自旋阻挡层的一部分处形成低电阻区域。

69. 发明专利

JP2014072392A Storage element, storage device, magnetic head 有权
标题翻译：存储元件，存储设备，磁头
公开(公告)号：JP2014072392A
公开(公告)日：2014-04-21
申请号：JP2012217702
申请日：2012-09-28
申请人： Sony Corp , ソニー株式会社
发明人： YAMANE KAZUAKI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , ASAYAMA TETSUYA , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11B5/3146 , B82Y25/00 , G11B5/1278 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L23/528 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To promote large storage capacity of a storage device while enhancing the operation stability thereof, by enhancing thermal stability of STT-MRAM storage elements furthermore, and allowing further miniaturization of the storage elements.SOLUTION: In an STT-MRAM storage element having a multi-layered ferri-pin structure where a magnetization fixed layer consists of a ferromagnetic layer and a non-ferromagnetic layer of at least two layers, the magnetic material in contact with an insulating layer in the magnetization fixed layer is composed of a CoFeB magnetic layer, the magnetic material not in contact with an insulating layer in the magnetization fixed layer is an alloy or a lamination structure using at least one kind of Pt group metal elements and ferromagnetic 3d transition metal elements out of 3d transition metal elements, respectively. Atomic concentration of the Pt group metal element is lower than that of the ferromagnetic 3d transition metal element. Consequently, multi-layered ferri-bonding strength is enhanced, and thermal stability of the storage element can be enhanced.
摘要翻译：要解决的问题：通过进一步提高STT-MRAM存储元件的热稳定性，并提高存储元件的进一步小型化，提高存储装置的大容量化，同时提高其运行稳定性。解决方案：在STT-MRAM存储具有多层铁引脚结构的元件，其中磁化固定层由至少两层的铁磁层和非铁磁层组成，与磁化固定层中的绝缘层接触的磁性材料由 CoFeB磁性层，不与磁化固定层中的绝缘层接触的磁性材料是分别使用3d过渡金属元素中的至少一种Pt族金属元素和铁磁性3d过渡金属元素的合金或层压结构。 Pt族金属元素的原子浓度低于铁磁性3d过渡金属元素的原子浓度。因此，提高了多层铁结合强度，并且可以提高存储元件的热稳定性。

70. 发明专利

JP2013175258A Multi-level memory, multi-level memory writing method, and multi-level memory reading method 审中-公开
标题翻译：多层存储器，多级存储器写入方法和多级存储器读取方法
公开(公告)号：JP2013175258A
公开(公告)日：2013-09-05
申请号：JP2012039947
申请日：2012-02-27
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , ASAYAMA TETSUYA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： G11C16/02
CPC分类号： G06F3/0661 , G06F3/0614 , G06F3/0688 , G06F12/0246 , G06F2003/0695 , G06F2212/7208 , G11C7/1006 , G11C11/56 , G11C11/5628 , G11C11/5642 , G11C2211/5647
摘要： PROBLEM TO BE SOLVED: To reduce the number of times data with large write energy is written, which is unfavorable for the number of times a multi-level memory can be rewritten.SOLUTION: A multi-level memory includes a memory array unit including a plurality of memory cells each of which can store data values of two or more bits. The multi-level memory further includes a memory controller configured to perform: conversion in accordance with write data in the memory array unit by use of a conversion rule for converting a specific data value among the data values written in one memory cell into a data value other than the specific data value; and processing of writing the converted write data and a conversion rule identifier, which indicates the conversion rule of the conversion, into the memory array.
摘要翻译：要解决的问题：为了减少写入大量写入能量的数据，这对于可以重写多级存储器的次数是不利的。解决方案：多级存储器包括存储器阵列单元，其包括多个存储单元，每个存储单元可以存储两个或多个位的数据值。多级存储器还包括存储器控制器，其被配置为执行：根据用于将写入一个存储器单元的数据值中的特定数据值转换成数据值的转换规则，根据存储器阵列单元中的写入数据进行转换除特定数据值外; 以及将转换的写入数据写入的处理和将转换的转换规则指示到存储器阵列中的转换规则标识符。

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