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51. 发明专利

JP4899793B2 Vacuum evaporation system 有权
公开(公告)号：JP4899793B2
公开(公告)日：2012-03-21
申请号：JP2006295143
申请日：2006-10-31
申请人：パナソニック株式会社
发明人：禎之岡崎 , 和義本田
IPC分类号： C23C14/24 , B01J3/00 , B01J3/02 , B01J19/00 , H01M4/02 , H01M4/04 , H01M4/139 , H01M4/48 , H01M4/485 , H01M4/66 , H01M4/70
CPC分类号： Y02E60/122
摘要： PROBLEM TO BE SOLVED: To provide a negative electrode that does not degrade charge and discharge characteristics, by forming a silicon oxide which is a high-capacity active material for the negative electrode, through a vacuum deposition process of a high productivity. SOLUTION: In a vacuum vapor-deposition apparatus, a substrate 4 which passes through between a first can 12 and a second can 13, and the substrate 4 which passes through between a third can 14 and a fourth can 15 are arranged so that the substrates can be bilaterally symmetric with respect to an evaporation source 9, and a growth direction of a first active material layer 21 and a growth direction of a second active material layer 23 which are formed on the front and back side of the substrate 4 respectively can be approximately symmetric. An exhaust pump 1 and a supporting exhaust pump 31 which communicates with a supporting exhaust port 30 that is installed around the second can 13 and the fourth can 15 evacuate the inside of a vacuum tank 2. COPYRIGHT: (C)2008,JPO&INPIT

53. 发明专利

JP4807389B2 Liquid withdrawal device from the device under reduced pressure 有权
公开(公告)号：JP4807389B2
公开(公告)日：2011-11-02
申请号：JP2008245413
申请日：2008-09-25
申请人：三菱化学株式会社
发明人：浩親保坂 , 寧之小川 , 修平矢田 , 芳郎鈴木
IPC分类号： B01J3/02 , B01D3/00 , C07C51/44 , C07C57/07

55. 发明专利

JP4734505B2 Microreactor and contact reaction method using the same 有权
公开(公告)号：JP4734505B2
公开(公告)日：2011-07-27
申请号：JP2007500578
申请日：2006-01-26
申请人：独立行政法人科学技術振興機構
发明人：修小林 , 雄一朗森
IPC分类号： B01J19/00 , B01J3/00 , B01J3/02 , B01J31/24 , C07B61/00 , C07C5/03 , C07C15/12 , C07C29/17 , C07C31/125 , C07C33/20 , C07C41/20 , C07C43/164 , C07C45/62 , C07C49/213 , C07C67/303 , C07C69/24
CPC分类号： C07B61/00 , B01J3/008 , B01J19/0093 , B01J2219/00835 , B01J2219/00891 , B01J2219/00961 , B01J2219/00963 , Y02P20/544

56. 发明专利

JPWO2009113625A1 高温・高圧に保持された反応器内部からの内容物の抽出方法、および炭化水素化合物の合成反応システム有权
公开(公告)号：JPWO2009113625A1
公开(公告)日：2011-07-21
申请号：JP2010502873
申请日：2009-03-12
申请人：新日鉄エンジニアリング株式会社 , 独立行政法人石油天然ガス・金属鉱物資源機構 , 国際石油開発帝石株式会社 , Jx日鉱日石エネルギー株式会社 , 石油資源開発株式会社 , コスモ石油株式会社
发明人：大西　康博 , 康博大西 , 讓加藤 , 讓加藤 , 篤村田 , 篤村田 , 山田　栄一 , 栄一山田
IPC分类号： C10G2/00 , B01J3/02 , B01J4/00 , B01J8/22
CPC分类号： G01N1/10 , B01J8/0035 , B01J8/22 , B01J8/228 , B01J2208/00141 , B01J2208/00761 , B01J2208/00769 , B01J2208/00973 , C10G2/343 , G01N2001/1025 , G01N2001/105 , G01N2001/2238
摘要：高温・高圧に保たれた反応器内部からの内容物の抽出方法であって、反応器の内容物を、同反応器に連通する内部空間を有する配管に導入する工程と、前記配管を閉じて前記内部空間に内容物を封入する工程と、前記内部空間から不要なガスを除去する工程と、前記内部空間に不活性ガスを供給して同内部空間に封入された内容物を不活性ガスで置換する工程とを備える。前記内部空間に封入された内容物を不活性ガスで置換することにより、前記内部空間から前記内容物が排出される。

57. 发明专利

JP4705425B2 Cracking unit and its start-up method of polyisocyanate residues 有权
公开(公告)号：JP4705425B2
公开(公告)日：2011-06-22
申请号：JP2005203222
申请日：2005-07-12
申请人：三井化学株式会社
发明人：忠吉田 , 泰道大戸 , 昭夫斎藤
IPC分类号： C07C209/62 , B01J3/02 , C08J11/14 , C08L75/00
CPC分类号： C08J11/14 , C08J2375/00 , Y02W30/704 , Y10S422/901

58. 发明专利

JP2011084788A Gate valve, vacuum treatment apparatus, and method for producing semiconductor device 审中-公开
标题翻译：门阀，真空处理装置和生产半导体装置的方法
公开(公告)号：JP2011084788A
公开(公告)日：2011-04-28
申请号：JP2009239720
申请日：2009-10-16
申请人： Sharp Corp , シャープ株式会社
发明人： NOZAKI JUNICHI , KISHIMOTO KATSUSHI
IPC分类号： C23C16/44 , B01J3/02 , C23C16/54 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To surely prevent a leak between a first treatment chamber and a second treatment chamber via a gate valve by an extremely simple structure in which the gate valve has a two-step seal structure. SOLUTION: The gate valve is composed of a valve box 42 provided with a gate opening part and a valve body 45 opening and closing the gate opening part, and has a structure where, when the valve body 45 is moved and the gate opening part of the valve box 42 is closed, the gate opening part is intercepted by a phenomenon that a seal face 51a (51b) as the circumferential edge face of the valve body 45 faces a seal bearing surface 64a (64b) provided along the gate opening part of the valve box 42. A seal member is provided over the whole circumference between the seal face 51a (51b) and the seal bearing surface 64a (64b), and, in the seal member 53, the central part in a direction orthogonal to the moving direction of a slide is formed in a recessed part recessed to the side of the seal face 64a(64b) than both the side parts, thus the seal member 53 itself has a two-step seal structure. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过闸阀具有两级密封结构的非常简单的结构，通过闸阀可靠地防止第一处理室和第二处理室之间的泄漏。解决方案：闸阀由设置有闸门开口部的阀箱42和开闭闸门开口部的阀体45构成，其结构为：当阀体45移动时，闸门关闭阀箱42的开口部，门开口部被阀体45的周缘部的密封面51a（51b）面向沿着闸门设置的密封承载面64a（64b）密封构件设置在密封面51a（51b）和密封件支承面64a（64b）之间的整个圆周上，并且在密封构件53中，中心部分沿正交方向滑动件的移动方向形成在比两侧部分在密封面64a（64b）侧凹入的凹部中，因此密封构件53本身具有两段密封结构。版权所有（C）2011，JPO＆INPIT

59. 发明专利

JP4664580B2 Continuous processing apparatus using subcritical water or supercritical water 有权
公开(公告)号：JP4664580B2
公开(公告)日：2011-04-06
申请号：JP2003276896
申请日：2003-07-18
申请人：兵庫県
发明人：修原田 , 実桑田 , 庄藤村
IPC分类号： A23L11/00 , B01J3/00 , A23J3/32 , A23L7/10 , B01J3/02 , B01J3/04 , C01B5/00 , C02F11/08
CPC分类号： Y02P20/544

60. 发明专利

JP2011042566A High-pressure vessel for growing group iii nitride crystal and method for growing group iii nitride crystal using high-pressure vessel and group iii nitride crystal 有权
标题翻译：用于生长III类氮化物晶体的高压容器和使用高压容器和III类氮化物晶体生长III族氮化物晶体的方法
公开(公告)号：JP2011042566A
公开(公告)日：2011-03-03
申请号：JP2010188934
申请日：2010-08-25
申请人： Sixpoint Materials Inc , シックスポイントマテリアルズ, インコーポレイテッド
发明人： HASHIMOTO TADAO , LETTS EDWARD , IKARI MASANORI
IPC分类号： C30B29/38 , B01J3/02 , B01J3/03 , B01J3/04 , C01B21/06 , C30B7/10 , F16J12/00
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： PROBLEM TO BE SOLVED: To provide a reactor for ammonothermal growth of a group Ill-nitride crystalline ingot. SOLUTION: The reactor 1 for ammonothermal growth of a group III-nitride crystalline ingot has (a) a body defining a chamber and (b) a first clamp 4 for sealing an end of the reactor, wherein the first clamp 4 is formed of a metal or alloy having a grain flow in a radial direction in the clamp 4. The reactor 1 may have a second clamp for sealing a second end of the reactor. COPYRIGHT: (C)2011,JPO&INPIT

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