基本信息:
- 专利标题: Vacuum evaporation system
- 申请号:JP2006295143 申请日:2006-10-31
- 公开(公告)号:JP4899793B2 公开(公告)日:2012-03-21
- 发明人: 禎之 岡崎 , 和義 本田
- 申请人: パナソニック株式会社
- 专利权人: パナソニック株式会社
- 当前专利权人: パナソニック株式会社
- 优先权: JP2006295143 2006-10-31
- 主分类号: C23C14/24
- IPC分类号: C23C14/24 ; B01J3/00 ; B01J3/02 ; B01J19/00 ; H01M4/02 ; H01M4/04 ; H01M4/139 ; H01M4/48 ; H01M4/485 ; H01M4/66 ; H01M4/70
摘要:
PROBLEM TO BE SOLVED: To provide a negative electrode that does not degrade charge and discharge characteristics, by forming a silicon oxide which is a high-capacity active material for the negative electrode, through a vacuum deposition process of a high productivity. SOLUTION: In a vacuum vapor-deposition apparatus, a substrate 4 which passes through between a first can 12 and a second can 13, and the substrate 4 which passes through between a third can 14 and a fourth can 15 are arranged so that the substrates can be bilaterally symmetric with respect to an evaporation source 9, and a growth direction of a first active material layer 21 and a growth direction of a second active material layer 23 which are formed on the front and back side of the substrate 4 respectively can be approximately symmetric. An exhaust pump 1 and a supporting exhaust pump 31 which communicates with a supporting exhaust port 30 that is installed around the second can 13 and the fourth can 15 evacuate the inside of a vacuum tank 2. COPYRIGHT: (C)2008,JPO&INPIT
公开/授权文献:
- JP2008111160A Vacuum vapor-deposition apparatus 公开/授权日:2008-05-15