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51. 发明专利

JPS61136258A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS61136258A
公开(公告)日：1986-06-24
申请号：JP25870284
申请日：1984-12-07
申请人： Nec Corp
发明人： NAKAMAE MASAHIKO
IPC分类号： H01L27/12 , H01L21/02 , H01L21/331 , H01L29/73 , H01L29/732
CPC分类号： H01L29/7317
摘要： PURPOSE:To obtain a high-concentration buried collector region, which makes extremely little upward diffusion spreading, by a crystal-defectless method by a method wherein an N type impurity is made to contain in the surface of the dielectric film in advance in a considerable high concentration, a polycrystalline silicon film is formed and after the polycrystalline silicon film is single-crystallized, arsenic atoms are diffused upwards. CONSTITUTION:A high-concentration impurity region 12 consisting of arsenic is formed in the surface of a dielectric film 11 consisting of an oxide film, which is formed on the surface of a P type silicon substrate 10. After that, after a single crystal silicon film 13 is formed, a selective oxidation is performed to provide insulating isolated films 15. At this time, arsenic atoms are diffused upwards from the high-concentration impurity region 12, an N type buried collector region 14a is formed and arsenic accumulated regions 14b, wherein arsenic to be taken in the oxide film is accumulated, are formed in the lower parts of the insulating isolated films 15. After surface oxide films 16 are formed, an N type collector region 17 is provided in such a way as to selectively connect with the N type buried collector region 14a. Then, a P type base region 18 and a P type compensation base region 19 are formed and an N type emitter region 20 is formed.
摘要翻译：目的：为了获得非常小的向上扩散扩散的高浓度埋地集电极区域，通过无晶体缺陷的方法，其中预先将N型杂质预先包含在电介质膜的表面中，高浓度时，形成多晶硅膜，多晶硅膜单结晶后，砷原子向上扩散。构成：在由形成在P型硅衬底10的表面上的氧化物膜构成的电介质膜11的表面上形成由砷构成的高浓度杂质区域12.然后，在单晶硅形成膜13，进行选择性氧化以提供绝缘隔离膜15.此时，砷原子从高浓度杂质区12向上扩散，形成N +型埋地集电区14a，并且积聚砷在绝缘隔离膜15的下部形成有在氧化膜中被摄取的砷的区域14b。在形成表面氧化膜16之后，在这样的形状中设置N +型集电极区域17 以便选择性地与N +型埋地集电区14a连接。然后，形成P型基极区域18和P +型补偿基极区域19，形成N +型发射极区域20。

52. 发明专利

JPS6171668A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6171668A
公开(公告)日：1986-04-12
申请号：JP19342584
申请日：1984-09-14
申请人： Sharp Corp
发明人： KAKIHARA YOSHINORI
IPC分类号： H01L21/331 , H01L29/41 , H01L29/73
CPC分类号： H01L29/41 , H01L29/7317
摘要： PURPOSE:To contrive to increase the speed and the integration by leading electrodes out so that the current route from semiconductor layers constituting a bi-polar transistor to the electrodes may become minimized. CONSTITUTION:An oxide single crystal film 2 having a composition of (ZrO2)0.8.(Y2O3)0.20 or (ZrO2)0.8.(MgO)0.20 is epitaxially grown on an Si angle crystal substrate 1, and an n type epitaxial layer 15 is grown thereon. Further, its surface is thermally oxidized, and a p type base layer 7 is then formed. An n type emitter layer 8 is formed n the p type base layer 7. Thereafter, grooves 16 reaching the oxide single crystal film 2 are formed by etching, and an element-isolating oxide film 3 is formed so as to cover the whole; then, the surface is flattened. A recess 17 a recess 18 reaching the side surface 6a of an n type collector layer 6 and the side surface 7a of the p type base layer 7, respectively, are formed and reach the upper surface of the n type emitter layer 8. An electrode film is formed over the whole surface, and this electrode film is etched into wiring patterns. This manner can reduce the resistance value of the semiconductor layer.
摘要翻译：目的：通过引出电极来提高速度和集成度，使得从构成双极晶体管的半导体层到电极的电流路径可能变得最小化。构成：在Si角晶体基板1上外延生长组成为（ZrO 2）0.8（Y 2 O 3）0.20或（ZrO 2）0.8（MgO）0.20）的氧化物单晶膜2，n型外延层15 在其上生长。此外，其表面被热氧化，然后形成p型基底层7。在p型基极层7上形成n +型发射极层8.然后，通过蚀刻形成到达氧化物单晶膜2的槽16，形成元件隔离氧化膜3，以覆盖整个; 然后，表面变平。形成凹部17，分别到达n型集电体层6的侧面6a和p型基极层7的侧面7a的凹部18，并到达n +型发射极层8的上表面在整个表面上形成电极膜，并将该电极膜蚀刻成布线图形。这样可以降低半导体层的电阻值。

53. 发明专利

JPS59208821A Diamond semiconductor by gas phase combination and manufacture thereof 失效
标题翻译：金刚石半导体与气相组合及其制造
公开(公告)号：JPS59208821A
公开(公告)日：1984-11-27
申请号：JP8439683
申请日：1983-05-13
申请人： Sumitomo Electric Ind Ltd
发明人： DOI AKIRA , FUJIMORI NAOHARU , YOSHIOKA TAKESHI
IPC分类号： H01L21/205 , H01L21/331 , H01L21/336 , H01L29/12 , H01L29/16 , H01L29/73 , H01L29/78
CPC分类号： H01L29/1602 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L29/1604 , H01L29/7317
摘要： PURPOSE:To obtain a semiconductor element having preferable heat dissipation and large carrier mobility by using a semiconductor diamond or diamondlike carbon. CONSTITUTION:A P type diamond, to which 0.01% of B is added, is produced by a superhigh pressure device, and a high frequency discharge is executed in mixture gas of C2H4 and PH3 with the diamond as a substrate to deposit a film of 3mum. B is implanted by a known ion implantation method to form a P type region, an aluminum electrode and an insulating film obtained by high frequency decomposition of C2H6 are covered on the prescribed region to form a planar transistor. This transistor is used in a high frequency output amplifying circuit, 100MHz of high frequency is operated by the power source or 15V to obtain an output of 3.5W.
摘要翻译：目的：通过使用半导体金刚石或类金刚石碳来获得具有优选散热性和载流子迁移率大的半导体元件。构成：通过超高压装置制造添加有0.01％B的P型金刚石，以C2H4和PH3的混合气体与金刚石作为基材进行高频放电，以沉积3μm的膜。 B通过已知的离子注入方法注入以形成P型区域，铝电极和通过C2H6的高频分解获得的绝缘膜被覆盖在规定区域上以形成平面晶体管。该晶体管用于高频输出放大电路，100MHz的高频由电源或15V运行，以获得3.5W的输出。

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