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1. 发明专利

JPS6171668A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6171668A
公开(公告)日：1986-04-12
申请号：JP19342584
申请日：1984-09-14
申请人： Sharp Corp
发明人： KAKIHARA YOSHINORI
IPC分类号： H01L21/331 , H01L29/41 , H01L29/73
CPC分类号： H01L29/41 , H01L29/7317
摘要： PURPOSE:To contrive to increase the speed and the integration by leading electrodes out so that the current route from semiconductor layers constituting a bi-polar transistor to the electrodes may become minimized. CONSTITUTION:An oxide single crystal film 2 having a composition of (ZrO2)0.8.(Y2O3)0.20 or (ZrO2)0.8.(MgO)0.20 is epitaxially grown on an Si angle crystal substrate 1, and an n type epitaxial layer 15 is grown thereon. Further, its surface is thermally oxidized, and a p type base layer 7 is then formed. An n type emitter layer 8 is formed n the p type base layer 7. Thereafter, grooves 16 reaching the oxide single crystal film 2 are formed by etching, and an element-isolating oxide film 3 is formed so as to cover the whole; then, the surface is flattened. A recess 17 a recess 18 reaching the side surface 6a of an n type collector layer 6 and the side surface 7a of the p type base layer 7, respectively, are formed and reach the upper surface of the n type emitter layer 8. An electrode film is formed over the whole surface, and this electrode film is etched into wiring patterns. This manner can reduce the resistance value of the semiconductor layer.
摘要翻译：目的：通过引出电极来提高速度和集成度，使得从构成双极晶体管的半导体层到电极的电流路径可能变得最小化。构成：在Si角晶体基板1上外延生长组成为（ZrO 2）0.8（Y 2 O 3）0.20或（ZrO 2）0.8（MgO）0.20）的氧化物单晶膜2，n型外延层15 在其上生长。此外，其表面被热氧化，然后形成p型基底层7。在p型基极层7上形成n +型发射极层8.然后，通过蚀刻形成到达氧化物单晶膜2的槽16，形成元件隔离氧化膜3，以覆盖整个; 然后，表面变平。形成凹部17，分别到达n型集电体层6的侧面6a和p型基极层7的侧面7a的凹部18，并到达n +型发射极层8的上表面在整个表面上形成电极膜，并将该电极膜蚀刻成布线图形。这样可以降低半导体层的电阻值。

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