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51. 发明专利

JPH058877B2 失效
公开(公告)号：JPH058877B2
公开(公告)日：1993-02-03
申请号：JP25786086
申请日：1986-10-29
申请人： SHARP KK
发明人： TANETANI MOTOTAKA , MATSUMOTO AKIHIRO , MATSUI KANEKI
IPC分类号： H01S5/00

52. 发明专利

JPH0512704A OPTICAL INFORMATION READER 失效
公开(公告)号：JPH0512704A
公开(公告)日：1993-01-22
申请号：JP16462391
申请日：1991-07-04
申请人： SHARP KK
发明人： HAMADA TOSHIMASA , NAKAMICHI MASUMI , YAMAMOTO SABURO , KATO SHOSHICHI , MATSUI KANEKI , YAMAMOTO OSAMU , YOSHIDA TOMOHIKO
IPC分类号： G11B7/135
摘要： PURPOSE:To provide the optical information reader which is reducible in size and weight, superior in mass-productivity, and made low in price. CONSTITUTION:A slanting surface 70 is formed on the reverse surface 1b of a block-shaped transparent substrate 1 below a convex objective 8 and a diffraction grating 7 is provided on the slanting surface 70. Thus, the diffraction grating 7 is provided on the slanting surface 70, so the pitch of the diffraction grating can be made large. Consequently, the manufacture is facilitated and the mass-productivity is improved.

53. 发明专利

JPH04237180A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH04237180A
公开(公告)日：1992-08-25
申请号：JP574291
申请日：1991-01-22
申请人： SHARP KK
发明人： SEKI AKINORI , HOSOBANE HIROYUKI , HATA TOSHIO , KONDO MASAFUMI , SUYAMA NAOHIRO , MATSUI KANEKI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain an internally trapped type semiconductor laser element which is low in threshold current, simple in manufacturing processes, and high in manufacturing yield taking advantage of the growth characteristics of an MBE method. CONSTITUTION:A multi-channel structure 10 composed of grooves 3 (triangular prism-shaped, trapezoidal prism-shaped) possessed of facets of (n11) (where, n=1-5) is formed on both the sides of a stripe-like current path 11 respectively excluding the stripe-like current path 11 on a compound semiconductor substrate 1 provided with a (100) plane. A crystal is made to grow on this substrate through a molecular beam epitaxial method, whereby a current constriction layer 2 is formed above the channel structure 10.

54. 发明专利

JPH0446477B2 失效
公开(公告)号：JPH0446477B2
公开(公告)日：1992-07-30
申请号：JP28595885
申请日：1985-12-18
申请人： SHARP KK
发明人： KANEIWA SHINJI , KUDO HIROAKI , MATSUI KANEKI , TAKIGUCHI HARUHISA , YOSHIDA TOMOHIKO
IPC分类号： H01S5/00 , H01S5/12

55. 发明专利

JPH04192413A GROWTH METHOD FOR COMPOUND SEMICONDUCTOR AND MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04192413A
公开(公告)日：1992-07-10
申请号：JP32434790
申请日：1990-11-26
申请人： SHARP KK
发明人： SEKI AKINORI , HOSOBANE HIROYUKI , HATA TOSHIO , KONDO MASAFUMI , SUYAMA NAOHIRO , MATSUI KANEKI
IPC分类号： H01L21/20 , H01L21/203 , H01S5/00 , H01S5/223 , H01S5/323
摘要： PURPOSE:To remove remainder on an etched face and irregularities caused thereby and obtain a flat thermal etching surface by applying a Ga molecular beam and an As molecular beam simultaneously and at the same time performing heat treatment at a temperature high enough to evaporate a GaAs layer. CONSTITUTION:A compound semiconductor substrate 3 comprising a GaAs substrate 1 and an AlxGa1-xAs layer 2 on which a several-thousand angstroms thick GaAs layer 4 is laminated is fitted in an MBE device and heated at a desired temperature about as high as 630 deg.C while an As molecular beam is applied to the substrate to sublime and remove an oxide layer on the surface of the GaAs layer 4. A specified quantity of a Ga molecular beam is applied simultaneously with the As molecular beam for heating and a temperature as high as 720-760 deg.C is kept for about 30 minutes while a first GaAs layer is formed. The quantity of the applied Ga molecular beam is determined so that the growth speed of GaAs may be lower than its sublimation speed. Thereby a very flat, high-quality AlGaAs epitaxial layer 6 laminated directly on the compound semiconductor substrate 3 without interposing a buffer layer is obtained.

56. 发明专利

JPH04162584A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH04162584A
公开(公告)日：1992-06-08
申请号：JP28809390
申请日：1990-10-24
申请人： SHARP KK
发明人： HOSODA MASAHIRO , TAKAHASHI KOUSEI , SUGA YASUO , TSUNODA ATSUISA , TANI KENTARO , MATSUI KANEKI
IPC分类号： H01S5/00
摘要： PURPOSE:To enhance the output of an element and to improve mass productivity by etching a part corresponding to the end of a resonator of an AlGaInP DH structure having an AlGaAs crystal on an uppermost layer until a lower AlGaInP clad layer is exposed, and then burying the etched region with the AlGaAs crystal having transparent composition for an oscillation wavelength by an MBE method. CONSTITUTION:An n-type (Al0.7Ga0.3)0.5In0.5P lower clad layer 11, a Ga0.5In0.5P active layer 12, a p-type (Al0.7Ga0.3)0.5PIn0.5P upper clad layer 13, and a P-type GaAs protective layer 14 are laminated on an n-type GaAs substrate 10 to form a DH structure, and a part 20 corresponding to a light emitting end face is dug so as to reach the lower clad layer. Then, this wafer is introduced into an MBE unit, and heated while irradiating it with an As molecular beam. In this case, P atoms are substituted with As atoms at the exposed lower clad layer 31, the side face 32 to form a modified layer. Then, a p-type Al0.55Ge0.45As window layer 15 transparent for an oscillation wavelength is grown until a groove 20 is buried, and a p-type GaAs contact layer 16 is laminated.

57. 发明专利

JPH03296290A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03296290A
公开(公告)日：1991-12-26
申请号：JP9901290
申请日：1990-04-13
申请人： SHARP KK
发明人： HOSOBANE HIROYUKI , SEKI AKINORI , HATA TOSHIO , KONDO MASAFUMI , SUYAMA NAOHIRO , MATSUI KANEKI
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S5/323
摘要： PURPOSE:To eliminate an irregularity in the width of a current injecting passage by providing a laminated structure which includes an n-type AlGaAs first clad layer, an AlGaAs active layer, a p-type AlGaAs second clad layer and a current blocking layer, forming the blocking layer of n-type AlGaAs, and forming a stripelike current injecting passage. CONSTITUTION:An n-type GaAs buffer layer, an n-type Al0.50Ga0.50As first clad layer 21, an Al0.14Ga0.86As active layer 3, a p-type Al0.50Ga0.50As second clad layer 22, a p-type GaAs buffer layer 4, an n-type Al0.60Ga0.40As etching stopper layer 5, an n-type Al0.10Ga0.90As current blocking layer 61 and an n-type GaAs protective layer 101 are sequentially laminated on an n-type GaAs substrate 1 by an MBE method. The layer 101 and the layer 61 are etched to form a stripelike groove reaching the layer 5. Since the blocking layer is scarcely melt back by Ga-Al-As melted liquid, the width of the groove is extended by the meltback.

58. 发明专利

JPH03268471A SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JPH03268471A
公开(公告)日：1991-11-29
申请号：JP6857790
申请日：1990-03-19
申请人： SHARP KK
发明人： HOSOBANE HIROYUKI , SEKI AKINORI , HATA TOSHIO , KONDO MASAFUMI , SUYAMA NAOHIRO , MATSUI KANEKI
IPC分类号： H01S5/00 , H01S5/20
摘要： PURPOSE:To make it possible to increase the thickness of a current constricting layer comprising a light absorbing layer and an evaporation preventing layer and hence obtain a stable optical output even at a high output by increasing the sum of the thickness of the light absorbing layer and the evaporation preventing layer, which serves as a current blocking layer, to 0.4mum or above. CONSTITUTION:The film thickness of a light absorbing layer 105 is adapted to range from 0.1 to 0.4mum. At the same time, the sum of the thickness of the light absorbing layer 105 and an evaporation preventing layer 106 is arranged to range from 0.4 to 1.5mum. The work to trap electric current in a stripe groove is efficiently carried out by increasing the sum of the light absorbing layer 105 and the vapor preventing layer 106, which serves as a current blocking layer so that a stable semiconductor laser may be obtained even it is oscillated at high output. The formation of a larger stripe groove in a photo etching process where the width of the vapor preventing layer exceeds that of the light absorbing layer 106, is capable of improving more favorably the lamination condition of a second growth layer and increasing a current constricting layer comprising the light absorbing layer 105 and the vapor prevention layer 106 irrespective of an Al composition value of a P type AlGaAs clad layer 104.

59. 发明专利

JPH0337876B2 失效
公开(公告)号：JPH0337876B2
公开(公告)日：1991-06-06
申请号：JP10547285
申请日：1985-05-16
申请人： SHARP KK
发明人： MATSUI KANEKI , TANETANI MOTOTAKA , MATSUMOTO AKIHIRO
IPC分类号： H01S5/00 , H01S5/022 , H01S5/14 , H01S5/40
摘要： PURPOSE:To obtain the high-output laser beams of one far-field pattern up to a high injection region by mounting an external resonance surface, which selectively reflects outgoing beams at a 0 deg. phase mode to a position facing a cleavage end surface, on which a thin film reducing optical reflectivity is formed, and projects outgiong beams to an active waveguide again. CONSTITUTION:A laser array element 30 is brazed to a radiator 33 and fitted to a susceptor 34, and a concave mirror 35 is set up in an oppositely facing manner on the end surface side, which is coated with an Al2O3 film 31 and reflectivity thereof extends over several %. Positional relationship between the semiconductor laser array element 30 and the concave mirror 35 is set so that laser beams emitted from an active region in the element 30 are reflected by the concave mirror 35 and projected to the active region in the semiconductor laser array element 30 again at that time. Outgoing beams at a 0 deg. phase mode are returned to the active layer region approximately completely and selectively. Accordingly, the loss of a resonator surface at the 0 deg. phase mode is reduced, and oscillation threshold gains are also minimized.

60. 发明专利

JPH0315831B2 失效
公开(公告)号：JPH0315831B2
公开(公告)日：1991-03-04
申请号：JP14133785
申请日：1985-06-25
申请人： SHARP KK
发明人： MATSUI KANEKI , TANETANI MOTOTAKA , MATSUMOTO AKIHIRO
IPC分类号： H01S5/00

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