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51. 发明专利

JP2011129585A Apparatus and method of treating surface of semiconductor substrate 有权
标题翻译：装置和处理半导体基板表面的方法
公开(公告)号：JP2011129585A
公开(公告)日：2011-06-30
申请号：JP2009284361
申请日：2009-12-15
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI , KOIDE TATSUHIKO , OGAWA YOSHIHIRO , KIMURA SHINSUKE , TOMITA HIROSHI
IPC分类号： H01L21/304 , H01L21/306 , H01L21/308
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67028 , H01L21/67051
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method of treating a surface of a semiconductor substrate that clean and dry the semiconductor substrate while preventing a pattern from being collapsed.
SOLUTION: A diluted water repellent is supplied to a surface of the semiconductor substrate W so as to form a water-repellent protective film on a surface of a convex pattern formed on the semiconductor substrate W. Since water repelling capability decreases more and more as the time from mixing of the water repellent and a diluent to supply to the substrate surface becomes longer and longer, a mixing valve 61 which mixes the water repellent and diluent is provided right before a nozzle 64 discharging the diluted water repellent to prevent the water repelling capability of the water repellent from decreasing.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理半导体衬底的表面的装置和方法，其在防止图案被折叠的同时清洁和干燥半导体衬底。解决方案：向半导体基板W的表面供给稀释斥水剂，以在形成于半导体基板W上的凸形图案的表面上形成防水保护膜。由于排水能力降低，更多的是随着防水剂和稀释剂的混合供应到基材表面的时间越来越长，在排出稀释斥水剂的喷嘴64之前提供混合防水剂和稀释剂的混合阀61，以防止防水剂的排斥能力下降。版权所有（C）2011，JPO＆INPIT

52. 发明专利

JP2010251596A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010251596A
公开(公告)日：2010-11-04
申请号：JP2009100850
申请日：2009-04-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KOIDE TATSUHIKO , TOMITA HIROSHI , OGUCHI HISASHI , HAYASHI HIDEKAZU
IPC分类号： H01L21/3205 , H01L21/304 , H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： H01L21/31144 , H01L21/0206 , H01L21/02071 , H01L21/32139 , H01L27/101 , H01L27/24 , Y10S438/906
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing the collapse of a pattern during a drying process in a manufacturing process of the semiconductor device. SOLUTION: The method comprises a step for forming a silicon based member layer consisting of silicon-based materials; a step for forming a metallic member layer consisting of metallic materials on the silicon-based member layer; a step for patterning the metallic member layer; a step for forming a sidewall film on a surface of the patterned metallic member layer; a step for forming a structure having the silicon-based member layer and the metallic member layer covered with the sidewall film by patterning the silicon-based member layer; a step for cleaning a surface of the structure with a chemical solution; a step for removing the chemical solution from the surface of the structure to form a water-repellent protective film on the surface of the structure; a step for rinsing the surface of the structure where the water-repellent protective film are formed; and a step for drying the surface of the structure. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件能够在半导体器件的制造过程中在干燥过程期间防止图案的塌陷。解决方案：该方法包括用于形成由硅基材料构成的硅基构件层的步骤; 在所述硅基部件层上形成由金属材料构成的金属部件层的工序; 图案化金属构件层的步骤; 在图案化的金属构件层的表面上形成侧壁膜的步骤; 通过对硅基构件层进行构图来形成具有硅基构件层和被侧壁膜覆盖的金属构件层的结构的步骤; 用化学溶液清洗结构表面的步骤; 从所述结构的表面除去所述化学溶液以在所述结构的表面上形成防水保护膜的步骤; 用于冲洗形成有防水保护膜的结构的表面的步骤; 以及用于干燥所述结构的表面的步骤。版权所有（C）2011，JPO＆INPIT

53. 发明专利

JP2010114414A Method of treating surface of semiconductor substrate 有权
标题翻译：处理半导体衬底表面的方法
公开(公告)号：JP2010114414A
公开(公告)日：2010-05-20
申请号：JP2009140992
申请日：2009-06-12
申请人： Toshiba Corp , 株式会社東芝
发明人： TOMITA HIROSHI , KOIDE TATSUHIKO , OGUCHI HISASHI , SHIMAYAMA KENTARO , IIMORI HIROYASU , JI LINAN
IPC分类号： H01L21/304 , F26B5/00 , H01L21/027 , H01L21/3065
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： PROBLEM TO BE SOLVED: To provide a method of treating the surface of a semiconductor substrate, which can clean and dry the substrate while preventing collapse of a pattern.
SOLUTION: The method includes: cleaning the semiconductor substrate by using a chemical solution; removing the chemical solution by using pure water; forming a water repellent protective film on the surface of the semiconductor substrate; rinsing the semiconductor substrate by using pure water; and drying the semiconductor substrate.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理半导体衬底的表面的方法，其可以在防止图案塌陷的同时清洁和干燥衬底。解决方案：该方法包括：使用化学溶液清洗半导体衬底; 用纯水去除化学溶液; 在半导体衬底的表面上形成防水保护膜; 用纯水冲洗半导体衬底; 并干燥半导体衬底。版权所有（C）2010，JPO＆INPIT

54. 发明专利

JP2009231541A Reformation method for film formation face and method for manufacturing semiconductor apparatus 审中-公开
标题翻译：薄膜形成面的改造方法及制造半导体装置的方法
公开(公告)号：JP2009231541A
公开(公告)日：2009-10-08
申请号：JP2008075231
申请日：2008-03-24
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI , MIYAZAKI KUNIHIRO
IPC分类号： H01L21/316 , C23C16/02 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To provide a method for carrying out stable oxidization treatment to the film formation face of an insulating film using TEOS/O
3 .
SOLUTION: The method for reforming a base layer having a film formation face of an insulating film to be formed by a chemical vapor growing method using reaction gas containing ozon and tetraethylorthsilicate includes: a step for manufacturing treatment liquid by mixing base oxidant and hydrogen peroxide solution; a step for heating treatment liquid for rise in temperature; a step for reforming a film formation face by bringing the treatment liquid into contact with the film formation face; and a step for washing the film formation face.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用TEOS / O 3 SBB在绝缘膜的成膜面上进行稳定氧化处理的方法。解决方案：使用含有臭氧和四乙基硅酸的反应气体的化学气相生长法形成具有绝缘膜的成膜面的基底层的方法包括：通过将碱性氧化剂和碱性氧化剂混合制造处理液的步骤过氧化氢溶液; 加热处理液体升温的步骤; 通过使处理液与成膜面接触来重整成膜面的工序; 以及洗涤成膜面的步骤。版权所有（C）2010，JPO＆INPIT

55. 发明专利

JP2007019405A Method and apparatus of manufacturing semiconductor 审中-公开
标题翻译：制造半导体的方法和装置
公开(公告)号：JP2007019405A
公开(公告)日：2007-01-25
申请号：JP2005201749
申请日：2005-07-11
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI , IIMORI HIROYASU
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a semiconductor whereby the variations of the concentrations of sulfuric acid and HF can be prevent in an SFM processing.
SOLUTION: The method has: a step for carrying a semiconductor substrate 1 in an inner vessel 2a for processing to which a mixed liquid 3 comprising sulfuric acid, HF, and H
2 O is fed; a step for disposing the inner vessel 2a for processing in an enclosed space 6; and a step for bringing the enclosed space 6 into an HF-volatilization-resistant atmosphere and/or a drying atmosphere.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体的方法和装置，由此在SFM处理中可以防止硫酸和HF的浓度的变化。解决方案：该方法具有：用于将半导体衬底1承载在用于加工的内部容器2a中的步骤，其中供给包含硫酸HF和H 2 SBO 2的混合液3; 在封闭空间6内设置用于处理的内容器2a的步骤; 以及将封闭空间6进入耐HF挥发性气氛和/或干燥气氛的步骤。版权所有（C）2007，JPO＆INPIT

56. 发明专利

JP2004214243A Method and device for etching semiconductor wafer 审中-公开
公开(公告)号：JP2004214243A
公开(公告)日：2004-07-29
申请号：JP2002378799
申请日：2002-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： OGAWA YOSHIHIRO , OGUCHI HISASHI , TOMITA HIROSHI , IIMORI HIROYASU
IPC分类号： H01L21/306 , H01L21/00 , H01L21/302 , H01L21/311 , H01L21/461
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： PROBLEM TO BE SOLVED: To provide an etching method of a wafer, with which a highly precise etching processing where etching quantity of an SiN film on the wafer is arranged between batches or in the batch is realized even if the batches different in the number of wafers are used, and to provide an etching device for performing the method.
SOLUTION: In an H3PO4 etching process with respect to the wafer, the number of wafers 10 supplied to an etching tank 1 is previously recognized. Thus, a temperature B considering a drop amount of the temperature (Δ=B-A) from a setting temperature A is set when the wafer is supplied. A silicon nitride film formed on the wafer 10 is highly precisely etched while the temperature is controlled at the temperature A after the wafer is supplied. Thus, dispersion of the etching amount due to a difference in the number of wafers per batch can be suppressed. Then, highly precise wafer etching, especially, highly precise etching of the SiN film formed on the wafer can be etched.
COPYRIGHT: (C)2004,JPO&NCIPI

57. 发明专利

JP2003110013A ACCOMMODATION APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003110013A
公开(公告)日：2003-04-11
申请号：JP2001301361
申请日：2001-09-28
申请人： TOSHIBA CORP
发明人： ITO AKIKO , KATANO MAKIKO , MIZUNO AYAKO , OGUCHI HISASHI , OGAWA YOSHIHIRO , TOMITA HIROSHI
IPC分类号： H01L21/673 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To realize a semiconductor substrate accommodation apparatus which can effectively control growth of an oxide film on a metal film. SOLUTION: A drying agent 18 is provided within a cabinet 2 in order to maintain the relative humidity in the cabinet 2 to under 5%.

58. 发明专利

JP2001168080A METHOD AND EQUIPMENT FOR DRYING SEMICONDUCTOR WAFER 失效
公开(公告)号：JP2001168080A
公开(公告)日：2001-06-22
申请号：JP35269499
申请日：1999-12-13
申请人： TOSHIBA CORP
发明人： OGUCHI HISASHI , TOMITA HIROSHI , UOZUMI NOBUHIRO , NADAHARA SOICHI
IPC分类号： B08B3/04 , F26B5/08 , F26B5/10 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for drying an wafer, and an equipment for implementing that method, in which generation of water marks is reduced significantly at the time of fabricating a semiconductor device. SOLUTION: In the equipment and method for drying an wafer, a cleaned wafer 1 is carried into the chamber of a dryer and cooled continuously by means of a cooler 8 before starting drying operation until the end of drying operation. As a cooling method, a cooler is provided at a position for supplying purge gas 9, e.g. nitrogen, being introduced into the chamber and purging nitrogen is introduced into the chamber while being cooled. The wafer carried into the chamber is cooled by blowing the cooling nitrogen and water drops remaining on the wafer leaving the cleaning process are also cooled. Emergence of an water glass is suppressed after drying up the wafer because water glass reaction rate is lowered as the temperature of residual water drop is decreased and thereby the yield is prevented from lowering.

59. 发明专利

JP2001077118A SEMICONDUCTOR DEVICE AND MANUFACTURE THREOF 失效
公开(公告)号：JP2001077118A
公开(公告)日：2001-03-23
申请号：JP2000187995
申请日：2000-06-22
申请人： TOSHIBA CORP
发明人： UOZUMI NOBUHIRO , OGUCHI HISASHI , NADAHARA SOICHI , OGAWA YOSHIHIRO , TOMITA HIROSHI
IPC分类号： H01L21/306 , H01L21/3205 , H01L21/3213 , H01L21/60 , H01L21/768 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide an appropriate etching rate with a titanium nitride layer which is a barrier metal in an etching process, related to a tungsten embedded wiring formation. SOLUTION: Although the etching rate of a tungsten is 4-5 times faster in a solution which is normally used, to raise the selective ratio of the titanium nitride, the mole ratio for H2O2/HCI is set at 1/100 or smaller with a solution temperature at 70 deg.C or higher related to the mixed liquid of hydrochloric acid and hydrogen peroxide used for wet-etching.

60. 发明专利

JPH11312659A WAFER DRYER AND WATER DRYING METHOD 失效
公开(公告)号：JPH11312659A
公开(公告)日：1999-11-09
申请号：JP4980599
申请日：1999-02-26
申请人： TOSHIBA CORP
发明人： OGUCHI HISASHI , TOMITA HIROSHI , NADAHARA SOICHI , OKUMURA KATSUYA
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To inhibit the generation of a water mark and the adhesion of dust and particles, by holding a wafer dryer under a decompressed state and forcibly discharging moisture detached from a wafer surface from a drying vessel. SOLUTION: A duct 6 for exhaust is connected to a bottom chamber 2b, and forced exhaust is carried out by an exhaust pump 7 coupled with the duct 6 for exhaust. An exhaust pump 22 is connected to the bottom chamber section 2b through a drainage port 21, and moisture in the chamber can be discharged forcibly. The inside of a chamber 2 is brought to a decompressed state by exhaust, and wafers 1 are decompressed and dried. The wafers are dried by decompressing rotary drying by rotating a rotary servo-motor 9 at the same time as the exhaust start of the inside of the chamber. Consequently, the wafers can be dried quickly. Forced drainage is conducted at all times during decompressing rotary drying. As a result, only moisture in an irreducible minimum of a demand is left in a main chamber 2a and the lower chamber 2b. Accordingly, the generation, etc., of a water mark resulting from residual components in the chamber can be inhibited.

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