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    • 59. 发明专利
    • SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
    • JP2001210644A
    • 2001-08-03
    • JP2000016189
    • 2000-01-25
    • TOSHIBA CORP
    • TOYODA HIROSHIHIRABAYASHI HIDEAKIKANEKO HISAFUMI
    • H01L23/52H01L21/306H01L21/3205
    • PROBLEM TO BE SOLVED: To uniformly perform recess etching treatment to the surface of a wiring layer. SOLUTION: A process for forming a groove 16 on a silicon oxide film 14 on an Si substrate 11, a process for depositing a TaN film 17 and a Cu wiring material 18 along the surface of the silicon oxide film 14, a process for embedding the TaN film 17 and Cu damascene wiring 18 in the groove 16 by performing averaging treatment to the surface of the Cu wiring material 18 and the TaN film 17 until the silicon oxide film 14 is exposed, a process for forming a recessed part 19, by subjecting the Cu damascene wiring 18 to recess etching treatment to the Cu using an etching solution containing hydrogen peroxide water that reacts with Cu, glycine for forming a complex with the ion of Cu, and water for dissolving the complex and making the surface of the Cu damascene wiring 18 to retreat, a process for forming a TaN film 20, so that the recessed part 19 is embedded onto the Cu damascene wiring 18 and the silicon oxide film 14, and a process for forming the TaN film 20 on the recessed part 20 by performing planarizing, until the surface of the silicon oxide film 14 is exposed.