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51. 发明专利

JP2012074716A Storage element and memory 审中-公开
标题翻译：存储元素和存储器
公开(公告)号：JP2012074716A
公开(公告)日：2012-04-12
申请号：JP2011249969
申请日：2011-11-15
申请人： Sony Corp , ソニー株式会社
发明人： KANO HIROSHI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , YAMAMOTO TETSUYA , OBA KAZUHIRO , HIGO YUTAKA , YAMANE KAZUAKI , OISHI TAKENORI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a storage element which can reduce a current necessary for recording information by improving spin injection efficiency.SOLUTION: A storage element 10 comprises a storage layer 17 holding information by a magnetization state of a magnetic material and a magnetization fixed layer 19 provided above the storage layer 17 via an intermediate layer 16, in which a magnetization direction of the storage layer 17 is changed by a flow of a current in a lamination direction thereby recording information in the storage layer 17. A damping constant of the magnetic material included in the storage layer 17 satisfies the condition α
摘要翻译：要解决的问题：提供一种通过提高自旋注入效率来减少记录信息所需的电流的存储元件。解决方案：存储元件10包括通过磁性材料的磁化状态保持信息的存储层17和经由中间层16设置在存储层17上方的磁化固定层19，其中存储器的磁化方向层17通过电流在层叠方向上的流动而改变，从而将信息记录在存储层17中。包含在存储层17中的磁性材料的阻尼常数满足条件α<0.015。版权所有（C）2012，JPO＆INPIT

52. 发明专利

JP2012064623A Storage element and memory unit 审中-公开
标题翻译：存储元件和存储单元
公开(公告)号：JP2012064623A
公开(公告)日：2012-03-29
申请号：JP2010205260
申请日：2010-09-14
申请人： Sony Corp , ソニー株式会社
发明人： UCHIDA HIROYUKI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE ICHIYO
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a storage element that can reduce a write current and improve heat stability.SOLUTION: The storage element comprises a storage layer 17 having magnetization perpendicular to a film surface with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17, and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. Further, a Ta film (ground layer 14) is formed on the magnetization fixed layer 15 on the side opposite to the insulation layer 16 side.
摘要翻译：要解决的问题：提供可以降低写入电流并提高热稳定性的存储元件。解决方案：存储元件包括具有垂直于膜表面的磁化的存储层17，其具有对应于信息变化的磁化方向;具有垂直于膜面的磁化的磁化固定层15，其用作存储在存储层17和设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16.信息由存储层17的磁化方向记录，通过在层叠中注入电子自旋极化而变化方向。这里，施加到存储层17的有效抗磁场的大小被调节为小于存储层17的饱和磁化强度的大小。此外，在磁化固定的位置形成Ta膜（接地层14）层15在与绝缘层16侧相对的一侧上。版权所有（C）2012，JPO＆INPIT

53. 发明专利

JP2012059957A Storage element and memory 有权
标题翻译：存储元素和存储器
公开(公告)号：JP2012059957A
公开(公告)日：2012-03-22
申请号：JP2010202332
申请日：2010-09-09
申请人： Sony Corp , ソニー株式会社
发明人： OMORI HIROYUKI , HOSOMI MASAKATSU , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a storage element which has a small magnetic damping constant and can reduce a driving current.SOLUTION: The storage element includes: a magnetic layer which contains carbon and at least one kind of element selected from Fe, Co and Ni, and has the carbon content equal to or more than 3 atom% and less than 70 atom% considering the total content of Fe, Co and Ni, as well as has a magnetic anisotropy perpendicular to the film surface; and an oxide layer which is formed so as to touch the magnetic layer and made of an oxide with the sodium chloride structure or the spinel structure.
摘要翻译：要解决的问题：提供具有小的磁阻尼常数并能够减小驱动电流的存储元件。解决方案：存储元件包括：含有碳和选自Fe，Co和Ni中的至少一种元素的磁性层，并且具有等于或大于3原子％且小于70原子％的碳含量考虑Fe，Co和Ni的总含量，并且具有垂直于膜表面的磁各向异性; 以及形成为与氯化钠结构或尖晶石结构接触的磁性层并由氧化物制成的氧化物层。版权所有（C）2012，JPO＆INPIT

54. 发明专利

JP2012008760A Portable information apparatus 审中-公开
标题翻译：便携式信息装置
公开(公告)号：JP2012008760A
公开(公告)日：2012-01-12
申请号：JP2010143410
申请日：2010-06-24
申请人： Sony Corp , ソニー株式会社
发明人： OMORI HIROYUKI , HOSOMI MASAKATSU , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： G06K19/077 , G06K19/00 , H01L21/8246 , H01L27/105 , H04M1/02 , H04M1/21
CPC分类号： G06F1/1658
摘要： PROBLEM TO BE SOLVED: To provide a portable information apparatus which can quickly and definitely erase information.SOLUTION: A portable information apparatus comprises an apparatus body 1, an accessory 2 attached to the apparatus body 1 when used, a solid magnetic memory 3 which is provided at a part where the accessory 2 of the apparatus body 1 is attached and holds information by the magnetization state of a magnetic material, and a magnetism shield 4 provided in the accessory 2 comprising a part facing the solid magnetic memory 3 when attaching the accessory 2 to the apparatus body 1.
摘要翻译：要解决的问题：提供可以快速且绝对地擦除信息的便携式信息装置。解决方案：便携式信息装置包括装置主体1，当使用时附接到装置主体1的附件2，设置在装置主体1的附件2的一部分处的固体磁存储器3，以及通过磁性材料的磁化状态保持信息，以及设置在附件2中的磁屏蔽4，其包括当将附件2附接到装置主体1时面向固体磁性存储器3的部分。版权所有（C）2012 ，JPO＆INPIT

55. 发明专利

JP2011113136A Random number generating device, random number generation method, and security chip 审中-公开
标题翻译：随机数生成装置，随机数生成方法和安全芯片
公开(公告)号：JP2011113136A
公开(公告)日：2011-06-09
申请号：JP2009266629
申请日：2009-11-24
申请人： Sony Corp , ソニー株式会社
发明人： OISHI TAKENORI , HIGO YUTAKA , KANO HIROSHI , HOSOMI MASAKATSU , OMORI HIROYUKI , YAMANE KAZUAKI , BESSHO KAZUHIRO
IPC分类号： G06F7/58 , G09C1/00 , H03K3/84 , H04L9/10
CPC分类号： G06F7/588
摘要： PROBLEM TO BE SOLVED: To prevent an attacker from easily reading a random number from a random number generation element. SOLUTION: A random number generation part 2 performs first write to supply spin-injection currents to set the resistance value of a random number generation element to a first resistance value to a random number generation element with a write probability which is 1, and performs first read to read the resistance value of the random number generation element. Then, the random number generation part 2 detects that the random number generation element has been set to a first resistance value by the first write on the basis of the read resistance value. In this case, the random number generation part 2 performs second write to supply spin-injection currents to set the resistance value of the random number generation element to a second resistance value to the random number generation element with a write probability which is 1/2, and makes the random number generation element generate random numbers. Then, a temperature control circuit 39 calculates an environment temperature on the basis of the resistance value of the random number generation element read by the first read. Then, the random number generation part 2 is made to perform the second write by changing the magnitude of the spin-injection currents while following the environment temperature. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止攻击者从随机数生成元素中容易地读取随机数。解决方案：随机数生成部分2执行第一写入以提供自旋注入电流，以将写入概率为1的随机数生成元素设置为随机数生成元素的电阻值为第一电阻值，并执行第一读取以读取随机数生成元件的电阻值。然后，随机数生成部分2基于读取的电阻值检测到通过第一写入将随机数生成元素设置为第一电阻值。在这种情况下，随机数生成部分2执行第二写入以提供自适应喷射电流，以将写入概率为1/2的随机数生成元件的随机数生成元件的电阻值设定为第二电阻值并使随机数生成元素生成随机数。然后，温度控制电路39基于通过第一读取读取的随机数生成元件的电阻值来计算环境温度。然后，通过随着环境温度改变自旋喷射电流的大小，使随机数生成部分2执行第二写入。版权所有（C）2011，JPO＆INPIT

56. 发明专利

JP2009283963A Magneto-resistance effect element, magnetic memory element, and magnetic memory device 有权
标题翻译：磁阻效应元件，磁记忆元件和磁记忆装置
公开(公告)号：JP2009283963A
公开(公告)日：2009-12-03
申请号：JP2009170518
申请日：2009-07-21
申请人： Sony Corp , ソニー株式会社
发明人： OBA KAZUHIRO , HAYASHI KAZUHIKO , KANO HIROSHI , BESSHO KAZUHIRO , MIZUGUCHI TETSUYA , HIGO YUTAKA , HOSOMI MASAKATSU , YAMAMOTO TETSUYA , NARISAWA KOSUKE , SONE TAKESHI , ENDO KEITARO , KUBO SHINYA
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01F41/18 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/10 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C2029/5002 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/302 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element having improved squareness, reduced noise, and stable magnetic property. SOLUTION: The magneto-resistance effect element provided with a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers. The one of the ferromagnetic layers constitutes a free magnetization layer that is composed of a single layer having amorphous structure or a fine crystalline structure, or the main portion thereof is composed of a material layer having amorphous structure or a fine crystalline structure. The free magnetization layer is composed of at least one or more components selected from ferromagnetic elements including Fe, Co and Ni, and 10 atomic% to 30 atomic% of one or more elements selected from B, C, Al, Si, P, Ga, Ge, As, In, Sn, Sb, Tl, Pb and Bi. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有改善的立方度，降低的噪声和稳定的磁性的磁阻效应元件。解决方案：具有铁磁隧道结的磁阻效应元件，其具有夹在至少一对铁磁层之间的隧道势垒层。铁磁层中的一个构成由具有非晶结构或细晶体结构的单层构成的自由磁化层，或者其主要部分由具有无定形结构的材料层或细晶体结构构成。自由磁化层由选自Fe，Co和Ni的铁磁元素和10原子％至30原子％的选自B，C，Al，Si，P，Ga中的一种或多种元素的至少一种或多种组分构成，Ge，As，In，Sn，Sb，Tl，Pb和Bi。版权所有（C）2010，JPO＆INPIT

57. 发明专利

JP2008147522A Storage element and memory 有权
标题翻译：存储元素和存储器
公开(公告)号：JP2008147522A
公开(公告)日：2008-06-26
申请号：JP2006335016
申请日：2006-12-12
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , YAMAMOTO TETSUYA , YAMANE ICHIYO , OISHI TAKENORI , KANO HIROSHI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01F41/325 , H01L27/228 , H01L43/02 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a storage element capable of suppressing the generation of a spin pumping phenomenon and having sufficient heat stability. SOLUTION: In a storage element 3 where a magnetized fixed layer 31 is formed on a storage layer 32 for storing information by a magnetized state of a magnetic substance through a tunnel insulating layer 16 and the direction of magnetization M1 of the storage layer 32 is changed by allowing a current to flow in a lamination direction and injecting spin-polarized electrons to record information, a spin barrier layer 18 for suppressing the diffusion of spin-polarized electrons is formed on the opposite side of the storage layer 32 to the magnetized fixed layer 31 and a spin absorption layer 19 composed of a non-magnetic metallic layer causing the spin pumping phenomenon is formed on the opposite side of the spin barrier layer 18 to the storage layer 32, wherein the spin barrier layer 18 is composed of one or more sorts of materials selected from oxides, nitrides and fluorides. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制自旋泵送现象的产生并具有足够的热稳定性的存储元件。解决方案：在存储元件3中，磁化固定层31形成在存储层32上，用于通过隧道绝缘层16通过磁性物质的磁化状态存储信息，并且存储层的磁化方向M1 通过允许电流在层叠方向上流动并注入自旋极化电子以记录信息而改变32，在存储层32的相对侧上形成用于抑制自旋极化电子扩散的自旋势垒层18 磁化固定层31和由引起自旋泵送现象的非磁性金属层构成的自旋吸收层19形成在自旋势垒层18的与存储层32相反的一侧，其中自旋阻挡层18由一种或多种选自氧化物，氮化物和氟化物的材料。版权所有（C）2008，JPO＆INPIT

58. 发明专利

JP2007053143A Memory element and memory 审中-公开
标题翻译：记忆元素和记忆
公开(公告)号：JP2007053143A
公开(公告)日：2007-03-01
申请号：JP2005235457
申请日：2005-08-15
申请人： Sony Corp , ソニー株式会社
发明人： HOSOMI MASAKATSU , HIGO YUTAKA , YAMAGISHI HAJIME
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82
摘要： PROBLEM TO BE SOLVED: To provide a memory element capable of easily patterning even if microfabricated and improving spin injection efficiency. SOLUTION: Magnetization fixed layers 31 and 32 provided on and under a memory layer 17 for keeping information by magnetization of a magnetic body are both constituted of a plurality of ferromagnetic layers laminated via non-magnetic layers. The orientations of the magnetization of the respective ferromagnetic layers are alternate. At least the layer 32 on the memory layer 17 has orientations of magnetization M19 and M21 fixed by the structure including a plurality of ferromagnetic layers laminated via the non-magnetic layers. With a current flowing in the lamination direction and spin-polarized electrons injected, the orientation of the magnetization M1 of the memory layer 17 changes to constitute the memory element 3 on which the information is recorded. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供即使微细化并且提高自旋注入效率也能够容易地构图的存储元件。解决方案：设置在用于通过磁体磁化保持信息的存储层17上和下方的磁化固定层31和32都由通过非磁性层层叠的多个铁磁层构成。各铁磁层的磁化取向是交替的。至少存储层17上的层32具有由包括通过非磁性层层叠的多个铁磁层的结构固定的磁化M19和M21的取向。通过在层叠方向上流动的电流和注入的自旋极化电子，存储层17的磁化M1的取向变化，构成记录有信息的存储元件3。版权所有（C）2007，JPO＆INPIT

59. 发明专利

JP2006156685A Memory element and memory 审中-公开
标题翻译：记忆元素和记忆
公开(公告)号：JP2006156685A
公开(公告)日：2006-06-15
申请号：JP2004344758
申请日：2004-11-29
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a memory element which obtains a sufficient output in case of reading recorded information and which reduces a current value required for writing by improving a spin injection efficiency.
SOLUTION: Magnetization fixed layers 11 and 15 are formed through spacer layers 12 and 14, respectively to the upper and lower sides of a memory layer 13 which hold information according to the magnetization state of a magnetic substance, the directions of the magnetization M1 and M3 of ferromagnetic layers 11 and 15 nearest to the memory layer 13 in the magnetization fixed layers 11 and 15 of the upper and lower sides of the memory layer 13 are reverse mutually. The direction of the magnetization M2 of the memory layer 13 changes by passing a current in the direction of lamination, the information is recorded in the memory layer 13, and the memory element 10 in which the areas of two spacer layers 12 and 14 of the upper and lower sides of the memory layer 13 differ is constituted.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在读取记录信息的情况下获得足够的输出并且通过提高自旋注入效率降低写入所需的电流值的存储元件。解决方案：磁化固定层11和15分别通过隔离层12和14分别形成在存储层13的上侧和下侧，存储层13根据磁性物质的磁化状态保持信息，磁化方向存储层13的上侧和下侧的磁化固定层11和15中最靠近存储层13的铁磁层11和15的M1和M3相反。存储层13的磁化M2的方向通过在层叠方向上通过电流而改变，信息被记录在存储层13中，并且存储元件10中存储层13的两个间隔层12和14的区域构成存储层13的上下两侧。版权所有（C）2006，JPO＆NCIPI

60. 发明专利

JP2006156477A Memory element, and memory 有权
标题翻译：记忆元素和记忆
公开(公告)号：JP2006156477A
公开(公告)日：2006-06-15
申请号：JP2004340902
申请日：2004-11-25
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82
摘要： PROBLEM TO BE SOLVED: To provide a memory element which records information without generating an electrostatic breakage and which obtains an output in a sufficient capacity in the case of reading the information.
SOLUTION: The memory element 10 includes a memory layer 13 which holds the information according to the magnetized state of a magnetic substance, a magnetization fixed layer 11, and a non-magnetic layer 12 between them. Two spin implantation layers 21 and 22 are formed by independent patterns through an intermediate layer 14 to the opposite side to the magnetization fixed layer 11 of the memory layer 13. The directions of the magnetization M21 and M22 of the two spin implantation layers 21 and 22 is reverse to one another mutually. A current is passed through the memory layer 13 from the one spin implantation layer to the other side spin implantation layer. The direction of the magnetization of the memory layer 13 thereby changes, and the memory element 10 in which the recording of the information is performed is constituted.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种记录信息而不产生静电破坏并且在读取信息的情况下获得足够容量的输出的存储元件。解决方案：存储元件10包括存储层13，其存储根据磁性物质的磁化状态，磁化固定层11和它们之间的非磁性层12的信息。两个自旋注入层21和22通过中间层14到存储层13的磁化固定层11的相对侧的独立图案形成。两个自旋注入层21和22的磁化M21和M22的方向相互相反。电流通过存储层13从一个自旋注入层传递到另一侧旋转注入层。存储层13的磁化方向由此改变，并且构成执行信息记录的存储元件10。版权所有（C）2006，JPO＆NCIPI

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