专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JPS6335491A APPARATUS FOR LIQUID PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPS6335491A
公开(公告)日：1988-02-16
申请号：JP17554386
申请日：1986-07-28
申请人： HITACHI LTD
发明人： TODOROKI SATORU , OBE ISAO , KASHIWADA YASUTOSHI , SATO AKIHIKO , YAMADA SEIICHI
IPC分类号： C30B19/10 , H01L21/208
摘要： PURPOSE:To enable the growth of a raw material in a growth chamber of a liquid phase epitaxial growth apparatus to a crystal in high reproducibility, by detecting the temperature increase in the growth chamber with a 1st detector and keeping the temperature at a prescribed level by a 2nd detector. CONSTITUTION:A growth chamber 1 made of quartz is encircled with a kanthal wire and is heated by electrifying the wire. The temperature of the chamber is detected with a 1st temperature detector 3 and is raised to a prescribed level by a temperature controller 2 according to the output of the 1st detector. When the temperature reaches the prescribed level, the 1st detector 3 is switched to a 2nd temperature detector 4 by a switching device 7 and the temperature of the growth chamber is maintained at the prescribed level for a prescribed period by the temperature controller 2 according to the output signal of the 2nd detector 4. When the temperature of the growth chamber detected by the 2nd detector 4 reaches the level sufficiently high to effect the crystal growth of a raw material for the growth of a compound semiconductor, a signal is transmitted to a slider 5 and a boat 6 containing the crystal growth raw material is introduced into the growth chamber 1 to effect the growth of the raw material to a compound semiconductor crystal.

42. 发明专利

JPS611393B2 JPS611393B2 - 失效
公开(公告)号：JPS611393B2
公开(公告)日：1986-01-16
申请号：JP9301978
申请日：1978-07-28
申请人： Matsushita Electric Ind Co Ltd
发明人： WADA MASARU , SUGINO TAKASHI , SHIMIZU JUICHI , ITO KUNIO
IPC分类号： C30B19/00 , C30B19/10 , H01L21/02 , H01L21/205 , H01L21/208

43. 发明专利

JPS59128297A Liquid phase epitaxial growing method 失效
标题翻译：液相外延生长方法
公开(公告)号：JPS59128297A
公开(公告)日：1984-07-24
申请号：JP97983
申请日：1983-01-06
申请人： Sumitomo Electric Ind Ltd
发明人： IKEDA KAZUHISA , SHIMODA TAKASHI
IPC分类号： C30B19/00 , C30B19/10 , C30B29/40 , H01L21/208
CPC分类号： C30B19/106
摘要： PURPOSE:To prevent the formation of an abnormally grown part on the surface of an epitaxially grown layer in a liq. phase epitaxial growing method by making the distance between the rear side of a cover and a layer to be epitaxially grown more than specified times the diameter of each hole for introducing a doping gas. CONSTITUTION:A semiconductor substrate 1 is put in each jig 2 for growth, and a soln. 3 contg. a solute for forming an epitaxially grown layer is filled into the jig 2. A cover 4 having pierced holes 5 for introducing a doping gas is placed on the jig 2 and the soln. 3, and the doping gas is introduced from the holes 5 to grow epitaxially the solute on the substrate 1. The distance between the rear side of the cover 4 and a layer to be epitaxially grown is made to >=4 times the diameter of each of the holes 5.
摘要翻译：目的：为了防止在液体中外延生长层的表面上形成异常生长的部分。通过使覆盖物的后侧和要外延生长的层之间的距离大于规定时间的距离，用于引入掺杂气体的每个孔的直径。构成：将半导体衬底1放入每个用于生长的夹具2中， 3对比用于形成外延生长层的溶质被填充到夹具2中。具有用于引入掺杂气体的穿孔5的盖4被放置在夹具2和溶胶上。 3，并且从孔5引入掺杂气体以在衬底1上外延生长溶质。将盖4的后侧和要外延生长的层之间的距离设为> =每个直径的4倍的孔5。

44. 发明专利

JPS5930798A Manufacture of plural casting simultaneously 失效
标题翻译：同时制造全套铸件
公开(公告)号：JPS5930798A
公开(公告)日：1984-02-18
申请号：JP10357283
申请日：1983-06-11
申请人： Philips Nv
发明人： JIYON CHIYADOUITSUKU BURISU , KORIN RICHIYAADO BURUU
IPC分类号： C30B19/00 , C30B19/04 , C30B19/10 , C30B29/40 , C30B29/48 , H01L21/208
CPC分类号： C30B29/40 , C30B19/04 , C30B19/106 , C30B29/48

45. 发明专利

JPS591240B2 JPS591240B2 - 失效
公开(公告)号：JPS591240B2
公开(公告)日：1984-01-11
申请号：JP3362678
申请日：1978-03-25
申请人： Kogyo Gijutsuin
发明人： SUZUKI KOZABURO
IPC分类号： C30B19/10 , C30B29/28 , H01F41/14 , H01F41/28

46. 实用新型

JPS58110068U 失效
公开(公告)号：JPS58110068U
公开(公告)日：1983-07-27
申请号：JP439882
申请日：1982-01-16
IPC分类号： C30B19/06 , C30B19/10 , H01L21/02 , H01L21/208

47. 发明专利

JPS589898A EPITAXIAL CRYSTAL GROWTH IN LIQUID PHASE 失效
公开(公告)号：JPS589898A
公开(公告)日：1983-01-20
申请号：JP10411681
申请日：1981-07-03
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： KURIHARA HARUKI
IPC分类号： C30B19/00 , C30B19/10 , H01L21/208
摘要： PURPOSE:To reduce extremely the change in composition in the thickness direction, by covering partially the surface of a base plate crystal with a mask, making an area wherein the crystal growth takes place into

48. 发明专利

JPS56160398A LIQUID PHASE GROWING APPARATUS 失效
公开(公告)号：JPS56160398A
公开(公告)日：1981-12-10
申请号：JP6086780
申请日：1980-05-08
申请人： FUJITSU LTD
发明人： NAKAI SABUROU
IPC分类号： C30B19/10 , C30B19/00 , H01L21/02 , H01L21/208
摘要： PURPOSE:To exactly move a sliding rod in a sliding system liq. phase epitaxial growing method by enabling the recording of the sliding position of a growing boat on self-recording type temp. recording paper. CONSTITUTION:A melt reservoir 6 is stopped on this side of a substrate 2, and a growing boat 8 is heated to a temp. at which a melt 21 is satd. The temp. of the boat 8 is then dropped at a constant temp. gradient while monitoring the temp. information graph 17 of a self-recording type recorder, and when the temp. reaches a prescribed temp., a lisding rod 10 is moved. Judging from the position information graph 16 of the sliding part showing the output potential of a potentio-meter 12 having a contact piece 13 linked to the rod 10, at a desired point of time the rod 10 is stopped, and an epitaxial layer is grown on the substrate 2.

49. 发明专利

JPS56105628A LIQUID PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPS56105628A
公开(公告)日：1981-08-22
申请号：JP857780
申请日：1980-01-28
申请人： SONY CORP
发明人： IZAWA NOBUYUKI , SUZUKI TOSHIHIKO , HOSHI KINJI
IPC分类号： C30B19/00 , C30B19/10 , H01F41/28 , H01L21/208
摘要： PURPOSE:To enable to obtain the crystal growth film having a superior crystallinity and uniform thickness by a method wherein the liquid phase epitaxial growth is performed in the condition applying a magnetic field to the epitaxial liquid. CONSTITUTION:When the dipping method is to be performed, the magnetic field generated by a magnetic field generating means 7 is applied to the liquid 1 to form the crystal growth film, and a substrate 4 to be made the growth is dept in the liquid in this condition to perform the epitaxial growth. When the magnetic field is applied like this to the liquid 1 on the occasion of the liquid phase epitaxial growth, the apparent viscosity of the liquid 1 is elevated and the convection of the liquid 1 is suppressed. Accordingly the crystal growth film having the superior crystallinity and uniform thickness, being avoided to be mixed with a needless impurity and having a good quality, can be made to grow on the substrate 4 even by the dipping method. The same effect can be also obtained when the liquid phase epitaxial growth is to be performed by the sliding method and the spin method.

50. 发明专利

JPS55157228A METHOD OF GROWING EPITAXIALLY IN LIQUID PHASE 失效
公开(公告)号：JPS55157228A
公开(公告)日：1980-12-06
申请号：JP6634379
申请日：1979-05-28
申请人： SHARP KK
发明人： HAYASHI HIROSHI , MURATA KAZUHISA , TAKENAKA TAKUO
IPC分类号： C30B19/00 , C30B19/10 , H01L21/208 , H01L33/30
摘要： PURPOSE:To restrict occurrence of defect in a laminate in a growing layer by providing supersaturation degree in melting growing liquid directly before starting the growing step in a temperature difference process. CONSTITUTION:Melting growing liquid is retained at predetermined temperature for predetermined time to completely saturate solute in the growing liquid, and a substrate is brought into contact with the growing liquid to cool the liquid to the degree that fine crystals are not deposited in the liquid or at the periphery immediately before starting the growing step. Thus, the solute is oversaturated in the growing liquid, and the substrate is further brought into contact with the growing liquid to retain the predetermined growing temperature. As a result, compound semiconductor having different composition from the substrate is grown in single or more layers so as to restrict the occurrence of the defect in the laminate in the growing crystal.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式