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41. 发明专利

JPS61214478A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61214478A
公开(公告)日：1986-09-24
申请号：JP5348285
申请日：1985-03-19
申请人： NEC CORP
发明人： BABA TOSHIO
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778 , H01L29/80
摘要： PURPOSE:To reduce contact resistance and parasitic resistance by a surface depletion layer extremely, and to enable operation at high speed by forming low-resistance source and drain regions with carrier storage layers in high impurity concentration first and afterwards shaping a channel section and a gate electrode between the source region and the grain region. CONSTITUTION:A MBE is used, and semi-insulating GaAs as a substrate 1, non-doped GaAs as a first semiconductor layer 9, non-doped InAs as a second semiconductor layer 10, N-type GaAs as a third semiconductor layer 11, SiO2 as a solid layer 12, N-type Al0.3Ga0.7As as a fourth semiconductor layer 13, Al as a gate electrode 4 and AuGe/Au as a source electrode 5 and a drain electrode 6 are employed, thus manufacturing a two-dimensional electron gas FET. Accordingly, an extremely low value as source resistance including contact resistance and parasitic resistance is acquired.

42. 发明专利

JPS58194718A Device for forming thermal silicon nitride film 失效
标题翻译：形成硅氮化硅膜的装置
公开(公告)号：JPS58194718A
公开(公告)日：1983-11-12
申请号：JP7489182
申请日：1982-05-04
申请人： Nec Corp
发明人： BABA TOSHIO
IPC分类号： C23C16/34 , C01B21/068 , H01L21/31 , H01L21/318 , H01L21/471
摘要： PURPOSE: The titled device capable of forming a uniform and relatively thick nitride silicon film, having constitution to heat only a silicon wafer and a suscepter in a reaction tube and to jet a nitrating gas from gas inlet set in the vicinity of the silicon wafer.
CONSTITUTION: In a device for forming a thermally silicon nitride film, which is provided with the heater 71 such as infrared lamp, etc. to heat only the suscepter 2 and the silicon wafer 1 in the reaction tube 31 having the cover 5 equipped with the exhaust pipe 6 and the gas feed pipe 41 having a gas outlet positioned in the vicinity of the surface of the silicon wafer 1 at one end and connected to the source of the feed gas at the other end, the silicon wafer 1 is heated to the fixed temperature in an inert gas atmosphere, and a nitrating gas such as NH
3 , etc. is fed from the feed pipe 41 to the device. The gas is sent without being decomposed until decomposed first above the wafer 1 surface, and permeated through the wafer 1 surface to form a relatively thick Si
3 N
4 film.
COPYRIGHT: (C)1983,JPO&Japio
摘要翻译：目的：能够形成均匀且相对较厚的氮化硅膜的标题装置，其具有仅在硅晶片中加热的反应管的构造，并且在反应管中喷射来自设置在硅晶片附近的气体入口的硝化气体。构成：在具有加热器71（例如红外线灯等）的热氮化硅膜的形成装置中，仅在具有盖5的反应管31中加热备用器2和硅晶片1，排气管6和气体出口管41的一端具有位于硅晶片1的表面附近的气体出口，并且在另一端连接到进料气体源，将硅晶片1加热至在惰性气体气氛中固定温度，并且从进料管41将诸如NH 3等硝化气体供给到该装置。气体在不分解的情况下被送出，直到在晶片1表面之上首先分解，并透过晶片1表面形成较厚的Si 3 N 4膜。

43. 发明专利

JP2002203015A SYSTEM TO CALL TAXI 失效
公开(公告)号：JP2002203015A
公开(公告)日：2002-07-19
申请号：JP2000403101
申请日：2000-12-28
申请人： NEC CORP
发明人： FUJITA JUNICHI , BABA TOSHIO , NIHEI FUMIYUKI , IGUCHI NORIYUKI , NOMURA HIDEKAZU , KAWAURA HISAO , HONGO HIROO , UEMURA TETSUYA , SUNAMURA JUN , ZEN YOSHIN
IPC分类号： G06Q10/00 , G06Q50/00 , G06Q50/10 , G06Q50/30 , G08G1/123 , H04B7/26 , H04W4/02 , G06F17/60 , H04Q7/34
摘要： PROBLEM TO BE SOLVED: To provide a system that can accept a dispatching a taxi even though a requesting procedure to call the taxi company is unknown. SOLUTION: A disclosed taxi call system receives the calling for dispatching the taxi at a taxi call terminal 10 via Internet 1. A service station 3 connected to the Internet 1, then, recognizes a transmission position of a taxi call terminal 10 and sends the position data of the taxi call terminal 10 and the taxi dispatch data from the call terminal 10 to a taxi company terminal 4 or a taxi terminal 81, 82, and so on via the Internet 1. Therefore, a person who calls the taxi can get the taxi dispatch without knowing a telephone number of the taxi company. Consequently, the system can realize the taxi dispatch that satisfies customer requirements.

44. 发明专利

JPH08186273A TUNNEL TRANSISTOR 失效
公开(公告)号：JPH08186273A
公开(公告)日：1996-07-16
申请号：JP33912694
申请日：1994-12-28
申请人： NEC CORP
发明人： UEMURA TETSUYA , BABA TOSHIO
IPC分类号： H01L29/68 , H01L29/205 , H01L29/80
摘要： PURPOSE: To provide a tunnel transistor suitable for finer form and has low voltage operation, high current density, and differential negative resistance. CONSTITUTION: On a semiinsulation GaAs substrate 1, an i-Al0.5 Ga0.5 As layer 2 and an i-GaAs layer 2a are laminated as intermediate buffer layers, and on top of them, p -GaAs 4 acting as drain and n -GaAs 5 acting as source are respectively formed. Between the source and drain, a lamination structure consisting of an n -GaAs layer 6 acting as channel and i-Al0.5 Ga0.5 As 7 acting as a gate insulation layer is formed, and on the source and drain, ohmic electrodes 8 and 9 are provided, and on the gate insulation layer, a Schottky electrode 10 is provided. And, the channel layer 6 directly doped is inserted, so that, in the state where voltage is not applied to the gate, high concentration electrons are induced, for increased tunnel current density and reduced gate leak current.

45. 发明专利

JPH08186272A TUNNEL TRANSISTOR 失效
公开(公告)号：JPH08186272A
公开(公告)日：1996-07-16
申请号：JP33888294
申请日：1994-12-29
申请人： NEC CORP
发明人： BABA TOSHIO
IPC分类号： H01L29/80 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PURPOSE: To enlarge peak/valley ratio in N-type negative resistance characteristic and to control diffusion current at a gate. CONSTITUTION: In a surface area of a semiinsulation GaAs substrate 11, an n -type GaAs source area 12 and p -type InGaAs drain area 13 are formed. On a channel area, an n-type AlGaAs electron supply layer 14 is provided, and on tap of it a gate electrode 15 is farmed. On the source and drain areas, a source electrode 16 and a drain electrode 17 are formed. So that n -p tunnel joint is formed between channel drain, and, since the drain area becomes narrow forbidden band width, tunnel current is increased, so that peak/valley ratio is improved.

46. 发明专利

JPH0786176A FORMATION OF SELECTIVE STRAIN REGION 失效
公开(公告)号：JPH0786176A
公开(公告)日：1995-03-31
申请号：JP17643293
申请日：1993-07-16
申请人： NEC CORP
发明人： BABA TOSHIO , REZEKU ANRI
IPC分类号： H01L21/205 , H01L21/20 , H01L21/265 , H01L21/324 , H01L21/78
摘要： PURPOSE:To provide a method for forming a strain region selectively. CONSTITUTION:When ions 2 are implanted selectively into a crystal substrate 1 by such quantity as the compositional atoms are unbonded without causing any sputtering, the crystal is unbonded to form an amorphous layer 3(damaged region) to cause increase in volume. Consequently, the implanted surface bulges selectively. A thin film layer 4 is then formed thereon. When the substrate is heat treated to suppress the bulge, compressive strain is produced at a part 5 of the thin film layer.

47. 发明专利

JPH05175494A TUNNEL TRANSISTOR 失效
公开(公告)号：JPH05175494A
公开(公告)日：1993-07-13
申请号：JP34159491
申请日：1991-12-25
申请人： NEC CORP
发明人： UEMURA TETSUYA , BABA TOSHIO
IPC分类号： H01L29/78
摘要： PURPOSE:To provide a transistor which utilizes a tunneling phenomenon to perform a high integration and a high speed operation. CONSTITUTION:The tunnel transistor comprises a laminated layer structure of a retracted first semiconductor 1 having one conductivity type, a non- retracted second semiconductor 3 and a retracted third semiconductor 4 having an opposite conductivity type on a substrate 1, a gate electrode 6 having a semiconductor layer 5a having wider forbidden band width than the second semiconductor on the exposed surface of the second semiconductor and containing ionized impurity and on the semiconductor layer, and a source electrode 7 and a drain electrode 8 for forming ohmic junctions with the second and third semiconductors 2, 4.

48. 发明专利

JPH0541497A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0541497A
公开(公告)日：1993-02-19
申请号：JP19631991
申请日：1991-08-06
申请人： NEC CORP
发明人： BABA TOSHIO
IPC分类号： H01L27/092 , H01L21/8238
摘要： PURPOSE:To realize an inverter circuit having a small area with single element by using a degenerated semiconductor for the semiconductor forming a drain and commonly using a gate electrode for both an n- and p-channel MOS transistors by bringing the drains of the MOS transistors into contact with each other. CONSTITUTION:Si, n-Si, and p-Si are respectively used for forming a substrate 1, first semiconductor 2, and second semiconductor 3. In addition, n -Si, p -Si, and n-Si are respectively used form forming the third semiconductor 4, fourth semiconductor 5, and fifth semiconductor 6. Moreover, p-Si, SiO2, and Al are respectively used for forming the fifth sixth semiconductor 7, insulating film 8, and gate electrode 9, first electrode 10, second electrode 11, and third electrode 12. This semiconductor device has a laminated structure composed of an n-and p-channel MOS transistors and a tunnel junction formed of degenerated transistors is used for the junction between the third and fourth transistors. Therefore, the conventional MOS inverter circuit which is constituted by combining two transistors of different conductivity types can be realized by using this device only.

49. 发明专利

JPH0541491A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0541491A
公开(公告)日：1993-02-19
申请号：JP19632091
申请日：1991-08-06
申请人： NEC CORP
发明人： BABA TOSHIO
IPC分类号： H01L27/088 , H01L21/8234
摘要： PURPOSE:To provide an inverter circuit which can increase the degree of integration and is composed of a single element. CONSTITUTION:An equivalent p n tunnel junction is formed between the first semiconductor 2 and second semiconductor (n-Si) 3 or between the fifth semiconductor (p-Si) 6 and sixth semiconductor (n -Si) 7 immediately below an insulating film by the potential at a gate electrode 9 in a state where a voltage is applied across the first and third electrodes 10 and 12 so that a reverse bias can be applied across the first and sixth semiconductors 2 and 7 and a potential which is opposite to that at the electrode 9 is generated at the second electrode 11. Thus an inverter circuit can be constitute only of this one element.

50. 发明专利

JPS6247157A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6247157A
公开(公告)日：1987-02-28
申请号：JP18670185
申请日：1985-08-27
申请人： NEC CORP
发明人： BABA TOSHIO
IPC分类号： H01L29/205 , H01L21/331 , H01L29/20 , H01L29/73 , H01L29/737
摘要： PURPOSE:To obtain a semiconductor device of ultrahigh speed operation by laminating a P-type base layer, an I-type emitter depletion layer and an N-type contracted emitter layer on an N-type collector. CONSTITUTION:An N type collector 2, a P-type base 3, an I-type emitter 8 and a contracted N-type emitter 9 are epitaxially formed of the same GaAs on an N type GaAs substrate 1 by an MBE method. An AuGe/Au emitter electrode 7 is attached, an NEu+ type layer 9 is etched, an AuZn base electrode 6 is attached, an In collector electrode 5 is attached to the back surface, and alloyed in H2. Since no hetero boundary is provided, a problem of carrier recombination can be avoided, and the emitter and the base are low resistance and suppressed from generating a parasitic resistance. Since layer 6 is contracted, it operates as the emitter layer having wider forbidden band width than the base layer 3, and since the layer 8 has almost no ionized impurity, the diffusion constant and the mobility of the carrier are large to facilitate a high speed operation.

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