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    • 42. 发明专利
    • Manufacture of thin film semiconductor element
    • 薄膜半导体元件的制造
    • JPS6189671A
    • 1986-05-07
    • JP21110484
    • 1984-10-08
    • Matsushita Electric Ind Co Ltd
    • KITAHIRO ISAMUKONDO SHUJIARAI MASAJI
    • H01L29/78G02F1/136G02F1/1368H01L21/027H01L21/336H01L27/12H01L29/786
    • H01L29/786
    • PURPOSE:To reduce the percentage of generation of pinholes by forming a positive type photosensitive resin film pattern on a photosensitive resin film pattern for forming element regions to selectively form the photosensitive resin film pattern only in a principal region on a thin film semiconductor element without use of a mask and an expensive device for putting masks together. CONSTITUTION:A positive-type second photosensitive resin film 21 is coated on a transparent substrate 1 ranging over the whole surface on which a photosensitive resin film pattern 6 for forming a thin film transistor region composed of a silicon nitride film (SiN film) 3 for a first electrode wiring 2, an amorphous silicon film (alpha-Si film) 4 and an SiN film 5 is formed. Next, a positive-type photosensitive resin film patter 23 is left to remain in a region which is masked by the first electrode wiring 2. In this state, a pinhole 7 of the first photosensitive resin film pattern 6 is completely covered. Next, the SiN film 5 and the alpha-Si film 4 are etched using the photosensitive resin film patterns 6 and 23 as masks to form a contact opening 26 and then a second electrode wiring 27.
    • 目的:通过在用于形成元件区域的感光性树脂膜图案上形成正型感光性树脂膜图案,仅在薄膜半导体元件的主要区域中选择性地形成感光性树脂膜图案,来减少针孔的产生百分比 的面具和用于将面具放在一起的昂贵的设备。 构成:正极型第二感光性树脂膜21涂布在透明基板1上,该透明基板1的整个表面上形成用于形成由氮化硅膜(SiN膜)3构成的薄膜晶体管区域的感光性树脂膜图案6, 形成第一电极布线2,非晶硅膜(α-Si膜)4和SiN膜5。 接下来,使正型感光性树脂膜图案23保留在被第一电极布线2遮蔽的区域中。在该状态下,第一感光性树脂膜图案6的针孔7被完全覆盖。 接下来,使用感光性树脂膜图案6和23作为掩模来蚀刻SiN膜5和α-Si膜4,以形成接触开口26,然后形成第二电极配线27。
    • 44. 发明专利
    • OSCILLATOR
    • JPH0998025A
    • 1997-04-08
    • JP25598795
    • 1995-10-03
    • MATSUSHITA ELECTRIC IND CO LTD
    • KONDO SHUJI
    • H01L21/60H03B5/04H03B5/32H03B5/36H03H9/02
    • PROBLEM TO BE SOLVED: To reduce the size of a substrate by putting an oscillation element upon a control element on the substrate and then connecting both elements together via the bonding wires. SOLUTION: A rectangular oscillation element 4 is put on a rectangular control element 5 and both elements are mounted on the surface of a substrate 1. The element 5 is placed in a recess part prepared on the substrate, and the element 4 is placed orthogonal to the element 5 on the substrate 1. In such a mounting structure, the electrodes 5a of the element 5 are exposed at both sides of the upper element 4 and connected to the wring patterns 2 via the bonding wires 6 on the substrate 1. At the same time, two electrodes 5a placed at both ends of the element 5 are directly connected to the electrodes 4a of the element 4 respectively via a hollow wiring consisting of the wires 6. That is, the oscillation of the element 4 is controlled by the element 5 via the wires 6.
    • 47. 发明专利
    • MANUFACTURE OF INTEGRATED CIRCUIT DEVICE
    • JPH0276798A
    • 1990-03-16
    • JP23041188
    • 1988-09-14
    • MATSUSHITA ELECTRIC IND CO LTD
    • KIKUCHI TATSUOKONDO SHUJITAKASE YOSHIHISA
    • B42D15/10B29C45/14G06K19/077H01L21/56
    • PURPOSE:To produce an integrated circuit device with high dimensional accuracy and high efficiency by a method wherein one surface of a metal sheet serves as an externally connecting terminal, an integrated circuit element is fixed to the other surface thereof, which is connected to an electrode of the element, the terminal surface is brought into close contact with a molding die surface, and a sealing resin is injected into the die. CONSTITUTION:One surface of a metal sheet 11 shaped into a lead frame serves as an externally connecting terminal 11a, and an integrated circuit element 13 is fixed to a predetermined position of the other surface thereof 11b with an insulating resin adhesive 12. Next, an input/output electrode 13a of the element 13 is electrically connected to the surface 11b using a metal wire 14. The terminal surface 11a of the sheet 11 is brought into close contact with a lower die 16a of a transfer molding die 16, which is preheated to a molding temperature. Then, the lower die 16a and an upper die 16b are clamped, and a sealing molding material mainly composed of an epoxy resin is injected thereto to form a sealing resin 15. In this manner, an integrating circuit device with superior mass-productivity and high quality can be obtained without the need for a process of removing the thin burr of the sealing resin 15.
    • 48. 发明专利
    • MEMORY CARTRIDGE
    • JPH0271550A
    • 1990-03-12
    • JP22272188
    • 1988-09-06
    • MATSUSHITA ELECTRIC IND CO LTD
    • KONDO SHUJIANDO DAIZO
    • B42D15/10H01L23/28
    • PURPOSE:To contrive the improvement of the reliability of connection and an increase the longevity of a memory cartridge by a method wherein outer leads are housed in one site of a resin constituting the memory cartridge and at the same time, the memory cartridge is provided with the group of narrow groove parts opened toward both surfaces of the surfaces and rears of the outer leads in a comb-teeth form. CONSTITUTION:In a lead frame 2, on which an LSI chip 1 is placed and the connection between the chip and the lead frame is finished, the frame 2 and the chip 1 are molded 9 with a molding resin and a package main body 10 of a memory cartridge is formed. At this time, the group of outer leads 6 of the frame 2 is resin-molded in a state that surface parts 11a and rear parts 11b, which serve as connection-contact faces with connectors of an external apparatus, are locally exposed from the molded resin part 9. In such a way, the group of the outer leads 6 is formed into a structure that both surfaces of each electrode are exposed in the group of groove parts 13a and 13b, which are formed from the side of the main surface of the same package main body 10 and the side of the surface reverse to the main surface and constitute the molded resin part 9. Accordingly, the electrode parts are prevented from being touched directly at the time of handling of the memory cartridge and the LSI chip can be protected from electrostatic breakdown.
    • 50. 发明专利
    • MEMORY CARTRIDGE
    • JPH01106459A
    • 1989-04-24
    • JP26343187
    • 1987-10-19
    • MATSUSHITA ELECTRIC IND CO LTD
    • KONDO SHUJIANDO DAIZOTAKASE YOSHIHISA
    • H01L23/28H01L23/50
    • PURPOSE:To prevent touching an electrode terminal for external connection together with preventing an LSI chip connected to said terminal from electrostatic breakdown by forming an electrode terminal for external connection on the base of a groove part of mold-formed resin constituting a memory cartridge. CONSTITUTION:In a lead frame 2 having finished connection to an LSI chip, the lead frame 2 and the LSI chip 1 except an electrode lead 6 for external connection and the LSI chip 1 are resin-molded and sealed with mold-formed resin 8. In this way, a package 9 of a memory cartridge is constituted. At this time, the electrode lead 6 for external connection of the lead frame 2 exposes only the connection contact face 10 of an external equipment to the surface and the other three side faces 11-13 of the electrode lead 6 for external connection are so constructed to be buried and fixed inside mold-formed resin 8, while a group of said electrode leads 6 for external connection is buried in the narrow recessed parts formed by said mold-formed resin 8, that is to say on the base of a groove part 14 having an open face on the upper part.