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41. 发明专利

JPS5286747A MARK DETECTING CIRCUIT 失效
公开(公告)号：JPS5286747A
公开(公告)日：1977-07-19
申请号：JP285976
申请日：1976-01-14
申请人： HITACHI LTD
发明人： SAGAWA AKIO
IPC分类号： G06F17/30 , G06F7/00
摘要： PURPOSE:To enable the constitution of shift registers with less number , by making the mark detecting photo sensor array in common use for the information readout and the photo sensor, when the mark on micro film is detected.

45. 发明专利

JPS61220522A PULSE GENERATING CIRCUIT 失效
公开(公告)号：JPS61220522A
公开(公告)日：1986-09-30
申请号：JP6072085
申请日：1985-03-27
申请人： HITACHI LTD
发明人： IZAKI NAOYUKI , SUZUKI MASAYOSHI , SAGAWA AKIO
IPC分类号： H03K17/60
摘要： PURPOSE:To prevent deterioration or destruction of an element by turning on other current source connected in series from turning-off after a storage carrier or residual charge is vanished and one current source is turned off from the on-state to prevent current flowing at a transient state. CONSTITUTION:It is supposed that an input signal C is switched when a potential V0 at an output terminal 12 is at a VDD level, that is, no current flows to a current source 30 because of equi-potential at both terminals although a current source 20 is turned off and the source 30 is turned on, so-called standby state. But for a delay means 100, the current source 20 is turned on immediately and a current flows from the current source 20 to the current source 30 due to the effect of storage or residual electric charge in the standby state of the source 30, but the provision of the delay means 100 prevents current flowing by retarding the transition of the current source 20 to the on-state.

47. 发明专利

JPS6014517A PULSE VOLTAGE GENERATING CIRCUIT 失效
公开(公告)号：JPS6014517A
公开(公告)日：1985-01-25
申请号：JP12254383
申请日：1983-07-05
申请人： HITACHI LTD
发明人： SAGAWA AKIO , IZAKI NAOYUKI , SUZUKI MASAYOSHI , WADA MASAYUKI , SHIMURA TATSUO , KARIYA TADAAKI
IPC分类号： H03K3/02 , H03K17/60
摘要： PURPOSE:To stabilize a constant current and a rise time and a breaking time by providing an electronic switch for a base terminal of a constant current source circuit. CONSTITUTION:In constant current source circuits 20' and 30' of this invention, electronic switch circuits 28 and 38 are added to conventional constant current source circuits 20 and 30, and a constant current is turned on and off by these switch operations. When an input signal VIN is in the low level in the constant current source circuit 20', the transistor TR28 operating as the electronic switch is turned off, and a divided voltage of a power source VCC is given to the base of a TR21, and a constant current if is flowed. When the input signal VIN becomes on a high level ''H'', the TR28 is turned on, and the constant current if is not flowed, and a pulse voltage VOUT is generated. In this case, rise time tr and breaking time tf of the output pulse voltage are not affected because a constant current value is set independently of the crest value of the input signal VIN.

48. 发明专利

JPS609165A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS609165A
公开(公告)日：1985-01-18
申请号：JP11591983
申请日：1983-06-29
申请人： HITACHI LTD
发明人： IZAKI NAOYUKI , SUZUKI MASAYOSHI , SAGAWA AKIO , OOKUBO SAKATOSHI
IPC分类号： H01L21/82 , H01L27/118 , H01L29/74
摘要： PURPOSE:To miniaturize a chip, to improve the degree of freedom of a layout and to simplify a design by fitting electrodes only to p-n-p layers or n-p-n layers in p-n-p-n diffusion layers capable of constituting a lateral type thyristor. CONSTITUTION:p Type diffusion layers 2, 3 are formed to an n type silicon layer shaping an island 1, and an n type diffusion layer 4 is formed in the p type diffusion layer 2. Contact holes 5-8 for leading out electrodes are formed to each layer, and wirings are shaped on the contact holes through an integrated- circuit forming means, such as evaporation, etching, etc., and connected to several diffusion layer. An n-p-n transistor can be constituted by connecting n type diffusions 4, 10 and the p type diffusion layer 2 by the wirings 15. Accordingly, since the same pattern can be used as an element pattern for a master slice, a chip is miniaturized, and the degree of freedom of a layout is improved.

50. 发明专利

JPS598107B2 JPS598107B2 - 失效
公开(公告)号：JPS598107B2
公开(公告)日：1984-02-22
申请号：JP607179
申请日：1979-01-24
申请人： Hitachi Ltd
发明人： SAGAWA AKIO , SUZUKI MASAYOSHI , TADAUCHI MITSUHARU
IPC分类号： H04N1/29 , H03K17/72 , H03K17/73 , H04N1/04
摘要： PURPOSE:To enable the selection of pulse signal fast in leading and trailing speed even with greater load resistance, by using the switch element of inverse conduction type. CONSTITUTION:The thyristor 1 and the diode 7 are connected in anti-parallel connection. With this constitution, the trailing speed of the high voltage pulse signal Vo is very fast since it is determined by almost turn-on time due to small internal resistance value at thyristor-on. On the other hand, the leading speed depends on the leading of the output VB of the high voltage pulse generating circuit 4. This is because the charge charged up in the floating static capacitance 5 is discharged through the diode 7 when the high voltage pulse is returned. That is, the leading time constant depends on the forward internal resistance of the diode 7 and the floating static capacitance C. Accordingly, even if the value of the load resistance 3 is greater, the leading and trailing speed of the pulse signal Vo is fast independently of the load resistor, allowing to obtain fast pulse signal.

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