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41. 发明专利

JP2004247526A Plasma treatment system and method therefor 审中-公开
公开(公告)号：JP2004247526A
公开(公告)日：2004-09-02
申请号：JP2003035924
申请日：2003-02-14
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ICHIMARU TOMOYOSHI , KIKKAI MOTOHIKO , YAMAMOTO HIDEYUKI , IKUHARA SHIYOUJI , KAGOSHIMA AKIRA
IPC分类号： H05H1/46 , B01J19/08 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment system and method therefor capable of applying temperature control to a stage and applying plasma treatment to a sample depending on the process of the sample to be treated. SOLUTION: In the plasma treatment system wherein the sample 2 is placed on the stage 10 to a plurality of regions of which a temperature control means 16 applies temperature control and the sample 2 is subjected to the plasma treatment according to a processing recipe, the treatment recipe includes a plurality of temperature setting parameters with respect to the stage 10, and the treatment system applies the plasma treatment to the sample 2 according to the treatment recipe set by each of a plurality of treatment steps. COPYRIGHT: (C)2004,JPO&NCIPI

42. 发明专利

JP2011249597A Apparatus and method for plasma processing 审中-公开
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：JP2011249597A
公开(公告)日：2011-12-08
申请号：JP2010121775
申请日：2010-05-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ABE TAKAHIRO , KIKKAI MOTOHIKO , NAGAYASU NOBUO
IPC分类号： H01L21/3065 , H01L21/304 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To suppress movement of a wafer when the pressure in a processing chamber is reduced in a wafer processing apparatus.SOLUTION: An apparatus for plasma processing comprises gas supply devices 109, 110 and 111 which supply processing gas to a vacuum processing chamber 101; a sample stand 104 on which a sample is mounted and held in the vacuum processing chamber; an exhaust device 106 which exhausts the vacuum processing chamber; and plasma generation devices 107 and 108 which generate plasma by supplying high-frequency energy to the vacuum processing chamber. The plasma processing is performed to the sample mounted on the sample stand. The sample stand is provided with a pusher pin for pushing up the sample mounted thereon, and evacuation is performed in a state where the sample is pushed up from the sample stand by operating the pusher pin after the plasma processing has ended.
摘要翻译：要解决的问题：在晶片处理装置中当处理室中的压力降低时，抑制晶片的移动。解决方案：用于等离子体处理的装置包括向真空处理室101供应处理气体的气体供应装置109,110和111; 样品台104，其上安装并保持在真空处理室中的样品; 排气装置106，其排出真空处理室; 以及通过向真空处理室供给高频能量来产生等离子体的等离子体产生装置107和108。对安装在样品台上的样品进行等离子体处理。样品台设置有用于推压安装在其上的样品的推杆，并且在等离子体处理结束之后通过操作推杆将样品从样品台推起的状态下进行抽真空。版权所有（C）2012，JPO＆INPIT

43. 发明专利

JP2009158732A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2009158732A
公开(公告)日：2009-07-16
申请号：JP2007335514
申请日：2007-12-27
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KAWAGUCHI TADAYOSHI , KIKKAI MOTOHIKO , FURUSE MUNEO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of processing a sample to be processed stably for a long period by reducing damage to a processing chamber wall surface. SOLUTION: Disclosed is the plasma processing apparatus that processes the sample placed in a processing chamber in a vacuum container using plasma generated in the processing chamber, wherein the plasma processing apparatus includes an in-processing-chamber member which is disposed in the processing chamber to face the plasma and made of quartz containing 0.05 to 0.5% by weight of yttrium or 0.1 to 1% by weight of aluminum. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够通过减少对处理室壁表面的损坏来长时间稳定地处理待处理的样品的等离子体处理装置。解决方案：公开了一种等离子体处理装置，其使用在处理室中产生的等离子体处理放置在真空容器中的处理室中的样品，其中等离子体处理装置包括处理室内部件，其设置在处理室面对等离子体并由含有0.05-0.5重量％的钇或0.1-1重量％的铝的石英制成。版权所有（C）2009，JPO＆INPIT

44. 发明专利

JP2007250755A Plasma processing device 有权
标题翻译：等离子体加工装置
公开(公告)号：JP2007250755A
公开(公告)日：2007-09-27
申请号：JP2006071027
申请日：2006-03-15
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ITABASHI NAOSHI , TETSUKA TSUTOMU , SUGANO SEIICHIRO , KIKKAI MOTOHIKO
IPC分类号： H01L21/3065 , C23C16/50 , C23C16/52 , H01L21/205 , H01L21/304 , H05H1/00
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32495 , H01J37/32935 , H01L21/6831
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing technology which is capable of discriminating a state change inside a reaction chamber or a spot at which a fault occurs, and furthermore predicting a state change inside the reaction chamber or a spot at which a fault may occur and its type. SOLUTION: The plasma processing device is equipped with a reaction chamber, a specimen base equipped with a static adsorption electrode, a gas discharge plate, a bias high-frequency power supply, and a static adsorption power supply. Furthermore, the plasma processing device is equipped with a control device which is provided with, at least, one of three monitors; an adsorption current monitor (Ip) that monitors a current supplied from the static adsorption power supply, a plasma formation-side impedance monitor (Zp) that monitors the impedance of plasma from a view point of the plasma forming high-frequency power supply, and a bias application-side impedance monitor (Zb) that monitors the impedance of plasma from a viewpoint of the bias high-frequency power supply; and judges whether one of phenomena, such as an abnormal discharge that occurs in the inner parts, insulation deterioration in an insulating film of the static adsorption electrode, and the abnormal discharge of the gas discharge plate, occurs or not on the basis of the monitored values. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够区分反应室内的状态变化或发生故障的点的等离子体处理技术，并且还预测反应室内部的状态变化或其中可能会发生故障及其类型。解决方案：等离子体处理装置配备有反应室，配备有静电吸附电极的样本基底，气体放电板，偏置高频电源和静电吸附电源。此外，等离子体处理装置配备有设置有三个监视器中的至少一个的控制装置; 监测从静态吸附电源供给的电流的吸附电流监视器（Ip），从等离子体形成高频电源的视点监视等离子体的阻抗的等离子体形成侧阻抗监视器（Zp），以及偏压施加侧阻抗监视器（Zb），其从偏置高频电源的观点监测等离子体的阻抗; 并根据被监视的状态判断是否发生诸如内部发生的异常放电，静电吸附电极的绝缘膜中的绝缘劣化和气体放电板的异常放电之类的现象之一值。版权所有（C）2007，JPO＆INPIT

45. 发明专利

JP2007073567A Semiconductor manufacturing apparatus 有权
标题翻译：半导体制造设备
公开(公告)号：JP2007073567A
公开(公告)日：2007-03-22
申请号：JP2005255801
申请日：2005-09-05
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： USUI TAKETO , KIKKAI MOTOHIKO , SHIROO KAZUHIRO , NAKAMOTO SHIGERU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which manufactures a semiconductor device at lower cost. SOLUTION: The semiconductor manufacturing apparatus etches a semiconductor wafer that is placed in a container and has a film on its surface, by using a plasma produced in the container. It is provided with: a detector that detects a time variation of light quantity concerning at least two wavelengths obtained from the wafer surface during the specified etching duration; and a judgment means that compares a duration between the time when the time variation quantity of a light having one wavelength of the two wavelengths becomes the maximum value, and the time when that of a light having the other wavelength thereof becomes the minimum value, with a specified value, and that judges the condition of the etching treatment. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种以较低成本制造半导体器件的半导体制造装置。解决方案：半导体制造装置通过使用在容器中产生的等离子体来蚀刻放置在容器中并在其表面上具有膜的半导体晶片。提供有：检测器，其在指定的蚀刻持续时间期间检测从晶片表面获得的至少两个波长的光量的时间变化; 并且判断装置，将两个波长的一个波长的光的时间变化量的时间变为最大值的时间与其另一个波长的光的时间变为最小值之间的持续时间进行比较，指定值，并且判断蚀刻处理的条件。版权所有（C）2007，JPO＆INPIT

46. 发明专利

JP2006210727A Plasma-etching apparatus and method therefor 审中-公开
标题翻译：等离子体蚀刻装置及其方法
公开(公告)号：JP2006210727A
公开(公告)日：2006-08-10
申请号：JP2005022113
申请日：2005-01-28
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： MIYA TAKESHI , TANAKA JUNICHI , SUGANO SEIICHIRO , MAKINO AKITAKA , KIKKAI MOTOHIKO
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/32137
摘要： PROBLEM TO BE SOLVED: To provide a plasma-etching apparatus having the excellent in-plane uniformity of its CD shifts.
SOLUTION: The plasma-etching apparatus has a processing chamber 26 for subjecting a processed object 1 to a plasma-etching processing, a first gas feeding source 100 for feeding a first processing gas, a second gas feeding source 110 for feeding a second processing gas, a first gas introducing region 42-1 having a first gas introducing port for introducing the first processing gas into the processing chamber 26, a second gas introducing region 42-2 having a second gas introducing port 3 for introducing the second processing gas into the processing chamber 26, flow-rate regulating devices 102, 113 for regulating the flow rates of the processing gases, and a gas shunting device 120 for shunting the processing gas into a plurality of ones. Further, the first and second gas introducing ports are provided adjacently in nearly equal planes to each other, and the first and second gas introducing regions 42-1, 42-2 are separated from each other.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的CD偏移的面内均匀性的等离子体蚀刻装置。解决方案：等离子体蚀刻装置具有用于对被处理物体1进行等离子体蚀刻处理的处理室26，用于供给第一处理气体的第一气体供给源100，用于供给第一处理气体的第二气体供给源110 第二处理气体，具有用于将第一处理气体引入处理室26的第一气体导入口的第一气体导入区域42-1，具有第二气体导入口3的第二气体导入区域42-2，气体进入处理室26，用于调节处理气体的流量的流量调节装置102,113和用于将处理气体分流成多个的气体分流装置120。此外，第一和第二气体导入口彼此相邻地设置在相邻的平面上，并且第一和第二气体导入区域42-1,42-2彼此分离。版权所有（C）2006，JPO＆NCIPI

47. 发明专利

JP2006032790A Plasma processing apparatus, and processing chamber inner wall surface stabilizing processing method 有权
标题翻译：等离子体加工设备和加工室内壁表面稳定加工方法
公开(公告)号：JP2006032790A
公开(公告)日：2006-02-02
申请号：JP2004212048
申请日：2004-07-20
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KITSUNAI HIROYUKI , ITABASHI NAOSHI , KIKKAI MOTOHIKO , ONO TETSUO
IPC分类号： H01L21/3065 , C23C16/44 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can eliminate a depository film in a processing chamber and restrain the corrosion of a material of a wall surface. SOLUTION: In the plasma processing apparatus, processing gas is introduced into the processing chamber 101, plasma 110 is generated, and vacuum processing of an object to be processed is performed. The apparatus includes plasma generating means 106-108, a monitor means 112 for detecting the existence of a reaction product containing a material constituting an inner wall 102 of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall 102 of the processing chamber has exceeded a predetermined amount. Plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O 2 gas or F gas. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够消除处理室中的保存膜并抑制壁表面材料的腐蚀的等离子体处理装置。解决方案：在等离子体处理装置中，处理气体被引入处理室101中，产生等离子体110，并且执行待处理物体的真空处理。该装置包括等离子体产生装置106-108，用于检测含有构成处理室的内壁102的材料的反应产物的存在的监视装置112，以及用于通知含有构成处理室的内壁102的材料已经超过预定量。对于任意的蚀刻工艺进行等离子体清洁，随后使用O气体或F气体进行壁表面稳定化处理。版权所有（C）2006，JPO＆NCIPI

48. 发明专利

JP2005260011A Method and device for wafer processing 审中-公开
标题翻译：用于波浪加工的方法和装置
公开(公告)号：JP2005260011A
公开(公告)日：2005-09-22
申请号：JP2004069928
申请日：2004-03-12
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： SUGANO SEIICHIRO , KAZUMI HIDEYUKI , TSUBONE TSUNEHIKO , KIKKAI MOTOHIKO , ARAMAKI TORU , SUMIYA MASANORI
IPC分类号： H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide an etching device which can process an etching shape vertically to a wafer outer circumference. SOLUTION: An electric field correction ring whereto a ceramics dielectric film is attached by a spraying method or the like in the surface of an electric field correction electrode is almost as high as an electrostatic chuck base material, and is arranged in the shoulder of the electrostatic chuck. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够垂直于晶片外周处理蚀刻形状的蚀刻装置。解决方案：在电场校正电极的表面中通过喷涂法等将陶瓷电介质膜附着的电场校正环几乎与静电卡盘基材一样高，并且布置在肩部的静电卡盘。版权所有（C）2005，JPO＆NCIPI

49. 发明专利

JP2004071880A Plasma processing apparatus 审中-公开
公开(公告)号：JP2004071880A
公开(公告)日：2004-03-04
申请号：JP2002230118
申请日：2002-08-07
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： TAUCHI TSUTOMU , SUMIYA MASANORI , FURUSE MUNEO , KIKKAI MOTOHIKO
IPC分类号： C23C16/44 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which a process chamber is constituted with a reduced influence due to plasma, thereby attaining a stable process characteristic and reducing an exchange frequency of consumable stores.
SOLUTION: In the plasma processing apparatus for processing a workpiece such as a wafer by the plasma or the like under a decompression atmosphere, conductive ceramics as a sintered compact involving alumina as a main component are used as a material of constituent parts in the apparatus.
COPYRIGHT: (C)2004,JPO

50. 发明专利

JP2003338494A Plasma processing system 审中-公开
标题翻译：等离子体处理系统
公开(公告)号：JP2003338494A
公开(公告)日：2003-11-28
申请号：JP2002147913
申请日：2002-05-22
申请人： Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： KIKKAI MOTOHIKO , SUMIYA MASANORI
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing system in which the acquisition rate of acceptable products can be improved sufficiently by increasing the diameter of a sample. SOLUTION: A relation ϕ1>ϕ2 is set between the diameter ϕ1 of a base material 80 composing a sample stage 8 for plasma processing and the diameter ϕ2 of the sample S. Furthermore, a second cover member 82 is provided and a relation ϕ2>ϕ3 is set between the diameter ϕ2 and the inside diameter ϕ3 of the opening in the cover member 82. Since the diameter of the base material 80 of the sample stage is set larger than the diameter of the sample S, temperature rise and local concentration of voltage are suppressed at the outer circumferential part of the sample S and characteristics of excellent uniformity in the machining shape are attained. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种通过增加样品直径可以充分改善可接受产品的获取速率的等离子体处理系统。解决方案：在构成等离子体处理的样品台8的基材80的直径φ1与样品S的直径φ2之间设定关系φ1>φ2。此外，设置第二盖构件82， φ2>φ3设定在盖部件82的开口的直径φ2与内径φ3之间。由于将样品台的基材80的直径设定为大于样品S的直径，因此温度升高和局部在样品S的外周部分抑制电压的集中，并获得加工形状均匀性优异的特性。版权所有（C）2004，JPO

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