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    • 44. 发明专利
    • Formation of thin film
    • 形成薄膜
    • JPH11278867A
    • 1999-10-12
    • JP8529598
    • 1998-03-31
    • Central Glass Co Ltdセントラル硝子株式会社
    • HAMAGUCHI SHIGEOAKAMATSU YOSHINORI
    • C01G23/00C03C17/00C03C17/25C03C17/30
    • C03C17/256C03C2217/212C03C2217/213C03C2217/23C03C2218/113
    • PROBLEM TO BE SOLVED: To ensure good film forming property and to enhance and stabilize film quality by regulating the surface temp. of a substrate immediately before coating with a chemical soln. to a temp. at least exceeding ambient temp.
      SOLUTION: A thin film is preferably formed in an environment at 25±15°C ambient temp. and ≤70% relative humidity. The temp. of the substrate at the time of coating with a chemical soln. is regulated to a temp. at least exceeding the ambient temp. The temp. difference ΔT°C between the temp. of the substrate at the time of coating and the ambient temp. of a coating chamber is preferably >0 to 80°C. An alcoholic soln. of ter- and quarterfunctional metal alkoxides or a soln. contg. a fluoroalkyl-contg. silane compd. is used as the chemical soln. A glass, plastic, metallic or ceramic substrate is used as the substrate. The temp. regulating method is not particularly limited and heating with an electric heater or hot water may be adopted.
      COPYRIGHT: (C)1999,JPO
    • 要解决的问题:为了确保良好的成膜性能,通过调节表面温度来提高和稳定膜质量。 在用化学溶剂涂覆之前立即进行。 到温度 至少超过环境温度。 解决方案:优选在环境温度为25±15℃的环境中形成薄膜。 和<= 70%相对湿度。 温度 在用化学溶剂涂覆时的基材。 被调到温度 至少超过环境温度。 温度 温差ΔT℃ 的涂层时的基材和环境温度。 的涂布室优选为0〜80℃。 一个酒精溶胶 三官能和四官能金属醇盐或溶胶。 contg。 氟代烷基 硅烷化合物 用作化学溶剂。 使用玻璃,塑料,金属或陶瓷基板作为基板。 温度 调节方法没有特别限制,可以采用电加热器或热水进行加热。
    • 45. 发明专利
    • Method and apparatus for producing calcium fluoride
    • 生产氟化钙的方法和装置
    • JP2013220956A
    • 2013-10-28
    • JP2012091756
    • 2012-04-13
    • Central Glass Co Ltdセントラル硝子株式会社
    • MIYAZAKI TATSUOTOKUNAGA ATSUSHIIDE TOSHIHISAAKAMATSU YOSHINORI
    • C01F11/22
    • C01B33/18C01C1/26C01D7/00C01F11/22C01P2002/72C01P2002/80C01P2004/61
    • PROBLEM TO BE SOLVED: To provided a method for producing, from drain water containing hydrosilicofluoric acid, calcium fluoride having a particle size and high purity suitable as a material for producing hydrofluoric acid.SOLUTION: A method for producing calcium fluoride using hydrosilicofluoric acid-containing water includes: a step [1] of reacting the hydrosilicofluoric acid-containing water with an ammonium compound and producing a first reaction product that includes insoluble silica and an ammonium fluoride aqueous solution; a step [2] of separating the insoluble silica from the first reaction product; a step [3] of reacting the first reaction product from which the insoluble silica has been separated, with calcium carbonate and producing a second reaction product that includes calcium fluoride and an ammonium carbonate aqueous solution; and a step [4] of separating the ammonium carbonate aqueous solution from the second reaction product.
    • 要解决的问题:提供一种从含氟硅氟酸的排水中制备具有适合作为制备氢氟酸的材料的粒度和高纯度的氟化钙的方法。溶液:使用含氢氟酸的氟化钙的制造方法 水包括:使含硅氟酸的水与铵化合物反应的步骤[1],并产生包含不溶性二氧化硅和氟化铵水溶液的第一反应产物; 将不溶性二氧化硅与第一反应产物分离的步骤[2] 使不溶性二氧化硅分离的第一反应产物与碳酸钙反应的步骤[3],并产生包含氟化钙和碳酸铵水溶液的第二反应产物; 和从第二反应产物中分离出碳酸铵水溶液的步骤[4]。
    • 46. 发明专利
    • Method and apparatus for producing calcium fluoride
    • 生产氟化钙的方法和装置
    • JP2013220955A
    • 2013-10-28
    • JP2012091755
    • 2012-04-13
    • Central Glass Co Ltdセントラル硝子株式会社
    • MIYAZAKI TATSUOTOKUNAGA ATSUSHIIDE TOSHIHISAAKAMATSU YOSHINORI
    • C01F11/22C01B33/18
    • C01B33/18C01D3/02C01D7/00C01F11/22C01P2002/72C01P2006/80
    • PROBLEM TO BE SOLVED: To provided a method for producing, from drain water containing hydrosilicofluoric acid, calcium fluoride having a particle size and high purity suitable as a material for producing hydrofluoric acid.SOLUTION: A method for producing calcium fluoride comprises: a step [1] of reacting hydrosilicofluoric acid-containing water with a potassium compound and producing a first reaction product that includes insoluble silica and a potassium fluoride aqueous solution; a step [2] of separating the insoluble silica from the first reaction product; a step [3] of reacting the first reaction product, from which the insoluble silica has been separated, with calcium carbonate and producing a second reaction product that includes calcium fluoride and a potassium carbonate aqueous solution; and a step [4] of separating the potassium carbonate aqueous solution from the second reaction product.
    • 要解决的问题:提供一种从含有硅氟酸的排水中制备具有适合作为制备氢氟酸的材料的粒度和高纯度的氟化钙的方法。溶解:一种氟化钙的制备方法,包括:步骤[ 1]使含硅氟酸的水与钾化合物反应,并制备包含不溶性二氧化硅和氟化钾水溶液的第一反应产物; 将不溶性二氧化硅与第一反应产物分离的步骤[2] 将不溶性二氧化硅从其中分离的第一反应产物与碳酸钙反应的步骤[3],并产生包括氟化钙和碳酸钾水溶液的第二反应产物; 和从第二反应产物分离碳酸钾水溶液的步骤[4]。
    • 48. 发明专利
    • Chemical for formation of protective film
    • 形成保护膜的化学品
    • JP2012033873A
    • 2012-02-16
    • JP2011091952
    • 2011-04-18
    • Central Glass Co Ltdセントラル硝子株式会社
    • KUMON SOICHISAIO TAKASHIARATA SHINOBUSAITO MASANORIRYOKAWA ATSUSHIYAMADA SHUHEINANAI HIDETOSHIAKAMATSU YOSHINORI
    • H01L21/304
    • H01L21/02057C09D183/08H01L21/0206H01L21/302H01L21/3105
    • PROBLEM TO BE SOLVED: To provide a chemical for formation of a water-repellent protective film in order to improve a cleaning process which induces pattern collapse easily in a manufacturing method of a wafer having a fine concave-convex pattern on the surface and containing a silicon element in at least a part of the concave-convex pattern.SOLUTION: The chemical forms a water-repellent protective film at least on the surface of recesses of a concave-convex pattern when a wafer having a fine concave-convex pattern on the surface and containing a silicon element in at least a part of the concave-convex pattern is cleaned. The chemical contains a silicon compound A represented by a general formula RSi(H)(X)and an acid, or a silicon compound C represented by a general formula RSi(H)(CH)(Z)and a base having a water content of 35 mass% or less. Total amount of moisture content in the starting material of the chemical is 5000 mass ppm or less for the total amount of material.
    • 要解决的问题:为了提供一种用于形成防水保护膜的化学品,以便在表面上具有微细凹凸图案的晶片的制造方法中容易地改善引起图案塌陷的清洁过程 并且在所述凹凸图案的至少一部分中含有硅元素。 解决方案:当表面上具有微细凹凸图案的晶片并且在至少一部分中含有硅元素时,化学品至少在凹凸图案的凹部的表面上形成防水保护膜 的凹凸图案被清洁。 该化学物质含有由通式R表示的硅化合物A,其中Si(H) 4-ab 和由通式R 7表示的酸或硅化合物C, (SBB =“POST”> 3 (Z) 4ghw 和水含量为35质量%以下的碱。 化学品原料中水分含量的总量对于总量为5000质量ppm以下。 版权所有(C)2012,JPO&INPIT
    • 49. 发明专利
    • Polysiloxane thermoplastic material
    • 聚硅氧烷热塑性材料
    • JP2011132314A
    • 2011-07-07
    • JP2009291445
    • 2009-12-22
    • Central Glass Co Ltdセントラル硝子株式会社
    • ITAKURA NOBUYUKITAKIMOTO CHIHARUEGUCHI HIROSHIMIYAZAWA AKIMICHIHONJO KEIJIAKAMATSU YOSHINORI
    • C08G77/04C08L83/06
    • PROBLEM TO BE SOLVED: To provide a polysiloxane thermoplastic material that can be molded at a low temperature compared to a conventional inorganic glass, has high heat resistance compared to a conventional organic polymeric material, and has excellent molding property.
      SOLUTION: The polysiloxane thermoplastic material contains at least one kind of component comprising a tri-functional siloxane having a substituent selected from a hydrocarbon group containing no aromatic ring and a hydrocarbon group containing an aromatic ring, and at least one kind of component of bifunctional siloxane having a substituent selected from a hydrocarbon group containing no aromatic ring and a hydrocarbon group containing an aromatic ring; and the polysiloxane thermoplastic material shows a softening temperature of 300 to 350°C.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 待解决的问题:提供与常规无机玻璃相比可以在低温下成型的聚硅氧烷热塑性材料,与常规的有机聚合物材料相比具有高耐热性,并且具有优异的成型性能。 解决方案:聚硅氧烷热塑性材料包含至少一种包含具有选自不含芳环的烃基的取代基的三官能硅氧烷和含有芳环的烃基的组分,以及至少一种组分 具有选自不含芳环的烃基和含有芳环的烃基的取代基的双官能硅氧烷; 聚硅氧烷热塑性材料的软化温度为300〜350℃。 版权所有(C)2011,JPO&INPIT
    • 50. 发明专利
    • Silicon wafer cleaning agent
    • 硅胶清洗剂
    • JP2010192878A
    • 2010-09-02
    • JP2009293916
    • 2009-12-25
    • Central Glass Co Ltdセントラル硝子株式会社
    • KUMON SOICHISAITO MASANORISAIO TAKASHINANAI HIDETOSHIAKAMATSU YOSHINORI
    • H01L21/304C11D7/28C11D7/50C11D17/00H01L21/027
    • PROBLEM TO BE SOLVED: To provide a silicon wafer cleaning agent for improving a cleaning process easily inducing a pattern collapse in a method for manufacturing a silicon wafer having a fine uneven pattern on the surface. SOLUTION: The silicon wafer cleaning agent includes: at least a water-based cleaning liquid, and a water-repellent cleaning liquid for making water-repellent at least the recessed portions of an uneven pattern during a cleaning process. The water-repellent cleaning liquid is a liquid composed of a water-repellent compound, which contains a reactive moiety which can chemically bind with Si in the silicon wafer, and a hydrophobic group, or is a liquid wherein 0.1 mass% or more of the water-repellent compound to the total quantity of 100 mass% of the water-repellent cleaning liquid and an organic solvent are mixed and contained therein. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种硅晶片清洗剂,用于改善在表面上具有微细凹凸图案的制造硅晶片的方法中容易引起图案塌陷的清洁过程。 解决方案:硅晶片清洗剂包括:至少一种水基清洗液和至少在清洗过程中至少具有凹凸图案的凹陷部分的防水剂的防水清洗液体。 防水性清洗液是由防水化合物构成的液体,该防水化合物含有与硅晶片中的Si化学结合的反应性部分和疏水性基团,或者为0.1质量%以上的液体, 斥水性化合物与防水性清洗液和有机溶剂的总量为100质量%混合并包含在其中。 版权所有(C)2010,JPO&INPIT