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41. 发明专利

JP2010176306A Information processing apparatus and data storage device 有权
标题翻译：信息处理设备和数据存储设备
公开(公告)号：JP2010176306A
公开(公告)日：2010-08-12
申请号：JP2009016961
申请日：2009-01-28
申请人： Toshiba Corp , 株式会社東芝
发明人： KURASHIGE TAKEHIKO , SAITO SHINJI , SUDA YUKIHIRO
IPC分类号： G06F3/06
CPC分类号： G06F12/0866 , G06F9/4411 , G06F2212/217
摘要： PROBLEM TO BE SOLVED: To provide an information processing apparatus achieving efficient data access when including a nonvolatile semiconductor memory as a cache.
SOLUTION: A hybrid HDD 19 includes the nonvolatile semiconductor memory 194 as the cache of a storage section 196. When receiving a read request from the host side, a control section 191 stores data read from the storage section 196, in the nonvolatile semiconductor memory 194 while replacing the data to be cached in a most recently read sequence. A start period notifying module 101 operated on the host side gives the hybrid HDD 19 notice on a start period when carrying out start processing associated with power-on or resetting. The control section 191 carries out data management for storing data that have received read requests after the start initiation until the start completion is notified from the host side, preferentially into the nonvolatile semiconductor memory 194.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供当将非易失性半导体存储器作为高速缓存包含时，实现高效数据访问的信息处理装置。解决方案：混合HDD 19包括作为存储部分196的高速缓存的非易失性半导体存储器194.当从主机端接收到读取请求时，控制部分191将从存储部分196读取的数据存储在非易失性存储器194中。半导体存储器194，同时替换在最近读取的序列中被缓存的数据。在主机侧操作的开始周期通知模块101在进行与上电或复位相关的开始处理的开始时刻通知混合HDD199。控制部分191执行用于存储在开始启动之后已经接收到读请求的数据的数据管理，直到从主机端通知开始完成，优先地进入非易失性半导体存储器194.版权所有（C）2010，JPO＆INPIT

42. 发明专利

JP2009231368A Light emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2009231368A
公开(公告)日：2009-10-08
申请号：JP2008072056
申请日：2008-03-19
申请人： Toshiba Corp , 株式会社東芝
发明人： HWANG JONGIL , SAITO SHINJI , NUNOGAMI SHINYA
IPC分类号： F21K99/00 , H01S5/02
CPC分类号： H01S5/0228 , F21K9/61 , F21Y2115/10 , H01S5/005 , H01S5/22 , H01S5/4056
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device having as high luminous efficiency as possible. SOLUTION: This light emitting device is provided with: a semiconductor laser element 10 having an emission surface emitting a laser light; a support base 20 having a recessed part 20a on a surface, and supporting the semiconductor laser element to expose the emission surface of the semiconductor element to the bottom surface of the recessed part; a light guide 40 having an entrance surface 40a for entering the laser light emitted from the semiconductor laser element, and an emission surface 40b for emitting light, and embedded in the recessed part of the support base to guide the laser light emitted from the semiconductor laser element; and a fluorescent substance 42 distributed in the light guide, absorbing the laser light and emitting light of a wavelength different from that of the laser light. The entrance surface of the light guide is a curved surface wherein the incident angle of the laser light is set in a predetermined range including a Brewster angle in a plane formed by the traveling direction of the laser light and a short axis of an emission spot of the laser light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供尽可能高的发光效率的发光装置。解决方案：该发光器件设置有：具有发射激光的发射表面的半导体激光元件10; 支撑基座20，其具有在表面上的凹部20a，并且支撑半导体激光元件将半导体元件的发射表面暴露于凹部的底面; 具有用于进入从半导体激光元件发出的激光的入射面40a的光导40以及用于发光的发射面40b，嵌入到支撑基底的凹部，引导从半导体激光器发出的激光元件; 以及分布在光导中的荧光物质42，吸收激光并发出与激光的波长不同的波长的光。导光体的入射面是弯曲面，其中激光的入射角度被设定在由激光的行进方向形成的平面中的布鲁斯特（Brewster）角以及发光点的短轴激光灯。版权所有（C）2010，JPO＆INPIT

43. 发明专利

JP2008251685A Light-emitting device and light generating module 审中-公开
标题翻译：发光装置和发光模块
公开(公告)号：JP2008251685A
公开(公告)日：2008-10-16
申请号：JP2007088810
申请日：2007-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , NUNOGAMI SHINYA , TACHIBANA KOICHI
IPC分类号： H01S5/022 , H01L33/28 , H01L33/32 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a light emitting module capable of efficiently taking out light. SOLUTION: The light emitting device includes a first light emitting element 2a which emits, in the opposite direction from each other, excitation light L11 from first and second end faces, facing each other, a first reflecting body 1a which includes a recess consisting of a bottom surface 10a where the first light emitting element 2a is arranged and first and second side surfaces which face the first and second end faces respectively and reflect the excitation light L11. Each of the first and second side surfaces comprises, from the bottom surface 10a toward outside, concave parts 11a and 11b continuous to the bottom surface 10a, convex parts 12a and 12b continuous to the concave parts 11a and 11b, as well as concave parts 13a and 13b continuous the convex parts 12a and 12b. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地取出光的发光模块。解决方案：发光器件包括：第一发光元件2a，其沿彼此相反的方向从相对于第一和第二端面的激励光L11发射;第一反射体1a，其包括凹部由配置有第一发光元件2a的底面10a和分别面对第一和第二端面的第一和第二侧面反射激发光L11。第一侧表面和第二侧表面中的每一个包括从底表面10a到外侧，与底表面10a连续的凹部11a和11b，与凹部11a和11b连续的凸部12a和12b以及凹部13a 13b连续地形成凸部12a，12b。版权所有（C）2009，JPO＆INPIT

44. 发明专利

JP2008009922A Semiconductor storage device and its connecting method 审中-公开
标题翻译：半导体存储器件及其连接方法
公开(公告)号：JP2008009922A
公开(公告)日：2008-01-17
申请号：JP2006182273
申请日：2006-06-30
申请人： Toshiba Corp , 株式会社東芝
发明人： KASAHARA AKIHIRO , KASA HIROSHI , MIURA AKIKAGE , SAITO SHINJI
IPC分类号： G06K19/07 , B42D15/10 , G06K19/077
CPC分类号： G06K19/07 , G06K19/07732
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device and its connecting method advantageous in space saving. SOLUTION: The semiconductor storage device comprises a substrate 14; a memory 26 electrically connected with the substrate; a first transceiving means 12 placed on the substrate; a second transceiving means 13 placed in plane with the first transceiving means; a conversion circuit 25, electrically connected with the substrate, for converting a signal between the first transceiving means and the memory into a predetermined form of signal; and a branch circuit 23, electrically connected with the substrate as well as with the first transceiving means, for electrically separating the second transceiving means from the conversion circuit. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在节省空间方面有利的半导体存储装置及其连接方法。解决方案：半导体存储装置包括基板14; 与基板电连接的存储器26; 放置在基板上的第一收发装置12; 与第一收发装置平行放置的第二收发装置13; 与基板电连接的转换电路25，用于将第一收发装置和存储器之间的信号转换成预定形式的信号; 以及与基板以及与第一收发装置电连接的分支电路23，用于将第二收发装置与转换电路分离。版权所有（C）2008，JPO＆INPIT

45. 发明专利

JP2007324411A Semiconductor light-emitting device and manufacturing method therefor and illumination apparatus using the same 审中-公开
标题翻译：半导体发光装置及其制造方法及其照明装置
公开(公告)号：JP2007324411A
公开(公告)日：2007-12-13
申请号：JP2006153714
申请日：2006-06-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAKO HAJIME , SAITO SHINJI , NUNOGAMI SHINYA
IPC分类号： H01L33/22 , H01L33/32 , H01L33/38 , H01L33/50 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a nitride group III-V compound semiconductor light-emitting device that can efficiently extract light to the outside and has high efficiency. SOLUTION: The nitride group III-V compound semiconductor light-emitting device has a substrate 1, an n-type semiconductor layer 2 comprising a nitride group III-V compound semiconductor on the substrate 1, and a light-emitting layer 4 comprising the nitride group III-V compound semiconductor on the n-type semiconductor layer 2. The light-emitting device further has a p-type semiconductor layer 7 comprising the nitride group III-V compound semiconductor on the light-emitting layer 4, and p-type semiconductor contact layers 8 formed into a pattern shape on the p-type semiconductor layer 7 and comprising the nitride group III-V compound semiconductor that contains p-type impurities of high concentration. The light-emitting device further has p-side electrodes 11 on the p-type semiconductor contact layers 8 and an n-side electrode 12 that energizes the light-emitting layer 4, by applying a voltage among the n-side electrode 12 and the p-side electrodes 11. Light-extracting efficiency can be improved by a constitution extracting a light through regions, in which p-type semiconductor contact layer 8 does not exist. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以有效地将光提取到外部并具有高效率的氮化物III-V族化合物半导体发光器件。解决方案：氮化物III-V族化合物半导体发光器件具有基板1，在基板1上包括氮化物III-V族化合物半导体的n型半导体层2和发光层4 包括在n型半导体层2上的氮化物III-V族化合物半导体。发光器件还包括在发光层4上包含氮化物III-V族化合物半导体的p型半导体层7，以及 p型半导体接触层8在p型半导体层7上形成为图案形状，并且包含含有高浓度的p型杂质的氮化物III-V族化合物半导体。发光装置在p型半导体接触层8和n侧电极12上还具有p侧电极11，其通过在n侧电极12和N侧电极12之间施加电压而对发光层4通电 p侧电极11.通过提取不存在p型半导体接触层8的区域的结构，可以提高取光效率。版权所有（C）2008，JPO＆INPIT

46. 发明专利

JP2006253673A Semiconductor light emitting element and light emitting device 有权
标题翻译：半导体发光元件和发光器件
公开(公告)号：JP2006253673A
公开(公告)日：2006-09-21
申请号：JP2006037095
申请日：2006-02-14
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , NUNOGAMI SHINYA
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/38 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To obtain a high luminous efficiency by suppressing absorption into a light emitting layer, even when internal reflection occurs at the light emitting layer of a light emitting element.
SOLUTION: A light emitting element comprises a laminate including a light emitting layer 107, and a first cladding layer 104 and a second cladding layer 109 provided on their respective sides of the light emitting layer; a pair of first high reflection layers 201a and 201b provided on their respective sides of the light emitting layer 107 in a first direction perpendicular to the laminating direction of the laminate; and a low reflection layer 203, and a second high reflection layer 202 provided on their respective sides of the light emitting layer in a second direction perpendicular to the laminating direction and crossing the first direction.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使当在发光元件的发光层处发生内部反射时，通过抑制对发光层的吸收来获得高发光效率。解决方案：发光元件包括层叠体，其包括发光层107，以及设置在发光层的各自侧面上的第一包层104和第二包层109。一对第一高反射层201a和201b，其在垂直于层叠方向的层叠方向的第一方向上设置在发光层107的各自侧面上; 和低反射层203，以及第二高反射层202，其在垂直于层叠方向的第二方向上设置在发光层的各自侧上并与第一方向交叉。版权所有（C）2006，JPO＆NCIPI

47. 发明专利

JP2015012044A 半導体発光素子审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2015012044A
公开(公告)日：2015-01-19
申请号：JP2013134282
申请日：2013-06-26
申请人：株式会社東芝 , Toshiba Corp
发明人： KATSUNO HIROSHI , SAITO SHINJI , HASHIMOTO REI , HUANG JONG-IL , NUNOUE SHINYA
IPC分类号： H01L33/08 , H01L33/38 , H01L33/42 , H01L33/48
CPC分类号： H01L25/0756 , H01L33/382 , H01L33/387 , H01L33/42 , H01L33/62 , H01L2224/32145 , H01L2924/0002 , H01L2924/00
摘要：【課題】光取り出し効率を向上させ、色割れを抑制することができる半導体発光素子を提供する。【解決手段】電極と、第1積層体10と、第2積層体20と、第1光透過電極41と、第1配線電極46と、を備えた半導体発光素子110において、第1積層体10は、第1半導体層11と、第2半導体層13と、第1発光層15とを含み、第2半導体層13は、第1半導体層11と電極との間に設けられ、第1発光層15は、第1半導体層11と第2半導体層13との間に設けられ、第2積層体20は、第3半導体層21と、第4半導体層23と、第2発光層25と、を含む。第3半導体層21は、第2半導体層13と電極との間に設けられる。第4半導体層23は、第3半導体層21と反射電極51との間に設けられる。第2発光層25は、第3半導体層21と第4半導体層23との間に設けられる。第1配線電極46は、第2半導体層13と第3半導体層21との間に設けられる。【選択図】図1
摘要翻译：要解决的问题：提供一种能够提高光提取效率并防止分色的半导体发光元件。解决方案：半导体发光元件110包括电极，第一叠层10，第二叠层20，第一光发射电极41和第一布线电极46.第一堆叠10包括第一半导体层11，第二半导体层13和第一发光层15.第二半导体层13设置在第一半导体层 11和电极，第一发光层15设置在第一半导体层11和第二半导体层13之间。第二堆叠20包括第三半导体层21，第四半导体层23和第二半导体层23。第三半导体层21设置在第二半导体层13和电极之间，第四半导体层23设置在第二半导体层23之间第三半导体层21和反射电极51.第二发光层25设置在第三半导体层21和第四半导体层23之间。第一布线电极46设置在第二半导体层13和第三半导体层13之间。第21层。

48. 发明专利

JP2014086490A Light emission power generation module and light emission power generation device 审中-公开
标题翻译：光发射发电模块和发光发电装置
公开(公告)号：JP2014086490A
公开(公告)日：2014-05-12
申请号：JP2012232724
申请日：2012-10-22
申请人： Toshiba Corp , 株式会社東芝
发明人： HASHIMOTO REI , HUANG JONG-IL , SAITO SHINJI , NUNOUE SHINYA
IPC分类号： H01L31/042 , H01L33/00 , H01L33/02 , H01L33/60 , H01L33/62
CPC分类号： H05B33/0845 , Y02E10/52
摘要： PROBLEM TO BE SOLVED: To provide a light emission power generation module and a light emission power generation device using a photoelectric conversion element for power generation and light emission.SOLUTION: The light emission power generation module includes: a photoelectric conversion element for light emission and power generation; a light emission control part for controlling light emission of the photoelectric conversion element; a power generation control part for controlling power generation of the photoelectric conversion element; and a switching part for switching a light emission state and a power generation state of the photoelectric conversion element.
摘要翻译：要解决的问题：提供一种使用光电转换元件进行发电和发光的发光发电模块和发光发电装置。解决方案：发光发电模块包括：用于发光的光电转换元件，发电; 用于控制光电转换元件的发光的发光控制部; 用于控制所述光电转换元件的发电的发电控制部; 以及用于切换光电转换元件的发光状态和发电状态的开关部。

49. 发明专利

JP2014063861A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2014063861A
公开(公告)日：2014-04-10
申请号：JP2012207623
申请日：2012-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： HUANG JONG-IL , HASHIMOTO REI , SAITO SHINJI , HUNG HUNG , NUNOUE SHINYA
IPC分类号： H01L21/205 , C23C16/34 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/32 , H01S5/323
CPC分类号： H01L33/0075 , H01L33/007
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which omits a process and has high producibility.SOLUTION: According to an embodiment, a semiconductor device manufacturing method comprises: preparing a substrate part including a base substrate having a first heat expansion coefficient, an intermediate crystal layer which is arranged on the base substrate and has a first grating constant and has a principal surface including first and second regions and an intermediate region between the first and second regions, and a mask layer arranged on the intermediate region; growing in the first and second regions, first and second lower layers each including a semiconductor crystal having a second heat expansion coefficient larger than the first heat expansion coefficient and a second grating constant larger than the first grating constant; growing first and second upper layers each including a semiconductor crystal, from over the first and second lower layers so as to extend over the mask layer and bringing the first and second upper layers into contact with each other on the mask layer; and lowering temperature to separate the first and second upper layers from each other at a border of the first and second upper layers on the mask layer.
摘要翻译：要解决的问题：提供一种省略工艺并具有高可生产性的半导体器件制造方法。解决方案：根据实施例，半导体器件制造方法包括：制备包括具有第一热膨胀系数的基底基板的基板部分，中间晶体层，其布置在所述基底基板上并具有第一光栅常数并且具有包括第一和第二区域的主表面和所述第一和第二区域之间的中间区域以及布置在所述中间区域上的掩模层; 在第一和第二区域中生长，第一和第二下层各自包括具有大于第一热膨胀系数的第二热膨胀系数的半导体晶体和大于第一光栅常数的第二光栅常数; 生长第一和第二上层，每个包括半导体晶体，从第一和第二下层上延伸以在掩模层上延伸并使第一和第二上层在掩模层上彼此接触; 以及降低温度以在掩模层上的第一和第二上层的边界处彼此分离第一和第二上层。

50. 发明专利

JP2012059745A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012059745A
公开(公告)日：2012-03-22
申请号：JP2010198632
申请日：2010-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , SUGAI MAKI , MURAMOTO EIJI , NUNOUE SHINYA
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L33/405 , B82Y20/00 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/3063 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having a contact electrode structure that has low resistance and high reliability.SOLUTION: A semiconductor device of an embodiment includes: a p-type nitride semiconductor layer; a polycrystalline nickel oxide layer formed on the p-type nitride semiconductor layer and having a thickness of 3 nm or less; and a metal layer formed on the nickel oxide layer. A crystal grain size of the nickel oxide layer is preferably larger than the thickness of the nickel oxide layer. The p-type nitride semiconductor layer is preferably composed of p-type gallium nitride (GaN).

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