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41. 发明专利

JP2011068504A Method for producing semiconductor substrate 审中-公开
标题翻译：生产半导体基板的方法
公开(公告)号：JP2011068504A
公开(公告)日：2011-04-07
申请号：JP2009219284
申请日：2009-09-24
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SASAKI MAKOTO , HARADA MAKOTO , NISHIGUCHI TARO , NAMIKAWA YASUO
IPC分类号： C30B29/36 , C23C16/42 , H01L21/205 , H01L21/336 , H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor substrate to efficiently produce a semiconductor device using SiC.
SOLUTION: A first silicon carbide substrate 11 having a first rear surface B1 and a second silicon carbide substrate 12 having a second rear surface B2 are prepared. The first and second silicon carbide substrates 11, 12 are arranged so that the first and second rear surfaces B1, B2 are exposed respectively in one direction. A growing layer 30 consisting of silicon carbide and connecting the first and second rear surfaces B1, B2 mutually is formed by a chemical vapor deposition method.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造半导体衬底以有效地生产使用SiC的半导体器件的方法。解决方案：制备具有第一后表面B1的第一碳化硅衬底11和具有第二后表面B2的第二碳化硅衬底12。第一和第二碳化硅基板11,12被布置成使得第一和第二后表面B1，B2分别在一个方向上露出。通过化学气相沉积法形成由碳化硅组成并连接第一和第二后表面B1，B2的生长层30。版权所有（C）2011，JPO＆INPIT

42. 发明专利

JP2010027641A Cleaning device and cleaning method 审中-公开
标题翻译：清洁装置和清洁方法
公开(公告)号：JP2010027641A
公开(公告)日：2010-02-04
申请号：JP2008183499
申请日：2008-07-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SASAKI MAKOTO , HARADA MAKOTO
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a cleaning device and a cleaning method of a semiconductor substrate or the like which effectively suppress reattachment while suppressing adverse effect on quality of the semiconductor substrate or the like.
SOLUTION: The cleaning device 1 cleans an SiC substrate 50 as an object to be cleaned, which is formed of a semiconductor or material including the semiconductor. The cleaning device includes a cleaning tank 11 for holding a cleaning liquid 16, a substrate holder 12 arranged inside the cleaning tank 11 for holding the SiC substrate 50, a heater 13 for convecting the cleaning liquid 16 by adjusting a temperature of the cleaning liquid 16, and a filter 14 for trapping deposit dropped from the SiC substrate 50.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体衬底等的清洁装置和清洁方法，其有效地抑制重新附着，同时抑制对半导体衬底等的质量的不利影响。解决方案：清洁装置1清洁作为由包括半导体的半导体或材料形成的作为被清洁物体的SiC基板50。清洁装置包括：用于保持清洗液16的清洗槽11;布置在清洗槽11内用于保持SiC基板50的基板保持件12;加热器13，用于通过调节清洗液16的温度来对准清洗液16 ，以及用于捕获从SiC衬底50掉落的沉积物的过滤器14.权利要求：（C）2010，JPO＆INPIT

43. 发明专利

JP2006128479A Insulated film formation method and silicon carbide semiconductor device 审中-公开
标题翻译：绝缘膜形成方法和碳化硅半导体器件
公开(公告)号：JP2006128479A
公开(公告)日：2006-05-18
申请号：JP2004316461
申请日：2004-10-29
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： SASAKI MAKOTO , KINOSHITA HIROYUKI , SHIOMI HIROSHI
IPC分类号： H01L21/316 , C30B29/36 , C30B33/02 , H01L21/318 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an insulated film that suppresses an increase in the quantity of crystal defects in the SiC crystal and improves an insulated film formation speed on the SiC crystal and an SiC semiconductor device with an insulated film created by this method.
SOLUTION: This method concerns insulated film formation on the SiC crystal 1. It consists of a process for forming an Si film 2 on the SiC crystal 1, and a process for forming an insulated film 2 containing Si by oxidizing or nitriding the Si film 2. In addition, this method can be used to manufacture a silicon carbide semiconductor device.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成绝缘膜的方法，其抑制SiC晶体中的晶体缺陷量的增加，并提高SiC晶体上的绝缘膜形成速度和具有绝缘的SiC半导体器件通过这种方法创造的电影。解决方案：该方法涉及SiC晶体1上的绝缘膜形成。它由在SiC晶体1上形成Si膜2的工艺和通过氧化或氮化形成含有Si的绝缘膜2的工艺 Si膜2.此外，该方法可用于制造碳化硅半导体器件。版权所有（C）2006，JPO＆NCIPI

44. 发明专利

JP2005187791A Phosphor and light-emitting diode 有权
标题翻译：磷光体和发光二极管
公开(公告)号：JP2005187791A
公开(公告)日：2005-07-14
申请号：JP2004087110
申请日：2004-03-24
申请人： Kansai Electric Power Co Inc:The , Mitsubishi Corp , Shikusuon:Kk , Sumitomo Electric Ind Ltd , 三菱商事株式会社 , 住友電気工業株式会社 , 株式会社シクスオン , 関西電力株式会社
发明人： KINOSHITA HIROYUKI , SHIOMI HIROSHI , SASAKI MAKOTO , HAYASHI TOSHIHIKO , AMANO HIROSHI , KAMIYAMA SATOSHI , IWATANI MOTOAKI , AKASAKI ISAMU
IPC分类号： C09K11/65 , C09K11/08 , C09K11/62 , H01L21/203 , H01L33/06 , H01L33/32 , H01L33/34 , H01L33/50 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L2224/45144 , H01L2224/48091 , H01L2224/49109 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a phosphor capable of being excited by a long-wavelength light source in an ultraviolet region or a visible region of a blue color to a violet color and capable of emitting light mainly in a visible region of the violet color through the blue color and a yellow color to a red color, and to provide a light-emitting diode capable of being easily mounted, excellent in color rendering properties, capable of being given at a low cost, and scarcely causing changes in coloration due to radiation angles. SOLUTION: This phosphor made of SiC is excited by the external light source and emits the light, wherein the substance is doped by at least one kind of elements of B and Al, and further by N. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供能够在紫外区域或蓝色可见区域中的长波长光源被紫色激发的荧光体，并且能够主要在可见光区域发光通过蓝色的紫色和黄色到红色，并且提供能够容易地安装的发光二极管，显色性能优异，能够以低成本给出，并且几乎不引起变化由于辐射角度而着色。解决方案：由SiC制成的该荧光体被外部光源激发并发射光，其中物质被B和Al的至少一种元素掺杂，进一步由N掺杂。（版权所有： C）2005，JPO＆NCIPI

45. 发明专利

JP2017078021A インゴット有权
公开(公告)号：JP2017078021A
公开(公告)日：2017-04-27
申请号：JP2016246833
申请日：2016-12-20
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd
发明人： HORI TSUTOMU , SASAKI MAKOTO , UETA SHUNSAKU , KAWASE TOMOHIRO
IPC分类号： C30B29/36
摘要：【課題】クラックの発生が抑制された昇華再結晶法による炭化珪素インゴットの提供。【解決手段】4H型炭化珪素からなる種基板11と、種基板11上に成長した炭化珪素層13とを備えた炭化ケイ素インゴット1の成長過程において、炭化珪素層13における種基板11側とは反対側の成長表面13aの温度の最大値と最小値との差が30℃以下となるように加熱コイルの電流値が調整され、成長表面13aの温度の揺らぎが抑制された状態で成長した炭化珪素層13は、成長方向において15mm以上の厚みを有し、炭化珪素層13の成長方向に沿って隣接する2点間の距離が5mmである複数の測定点S1,S2,S3において測定した格子定数の最大値と最小値との差が0.004nm以下であり、炭化珪素層13の成長方向からみたときの幅が125mm以上175mm以下である炭化珪素インゴット1。【選択図】図4

46. 发明专利

JP2015013761A 炭化珪素単結晶基板およびその製造方法有权
标题翻译：硅碳化物单晶基板及其制造方法
公开(公告)号：JP2015013761A
公开(公告)日：2015-01-22
申请号：JP2013139771
申请日：2013-07-03
申请人：住友電気工業株式会社 , Sumitomo Electric Ind Ltd
发明人： HORI TSUTOMU , KAWASE TOMOHIRO , SASAKI MAKOTO
IPC分类号： C30B29/36
CPC分类号： C30B23/025 , C30B23/00 , C30B23/02 , C30B29/36
摘要：【課題】結晶品質を向上可能な炭化珪素単結晶基板およびその製造方法を提供する。【解決手段】炭化珪素単結晶基板10の製造方法は以下の工程を備えている。主面2aを有しかつ炭化珪素からなる種結晶2と、炭化珪素原料3とが準備される。炭化珪素原料3内の任意の2点間における温度勾配を30℃/cm以下に維持しつつ炭化珪素原料3を昇華させることにより、主面2a上に炭化珪素単結晶1を成長させる。種結晶2の主面2aは、{0001}面または{0001}面から10?以下オフした面であり、かつ主面2aにおける螺旋転位密度が20/cm2以上である。【選択図】図2
摘要翻译：要解决的问题：提供可以提高晶体质量的碳化硅单晶衬底及其制造方法。解决方案：制造碳化硅单晶衬底10的方法包括以下处理。制备具有主面2a并由碳化硅制成的晶种2和碳化硅原料3。通过在碳化硅原料3的两个任意点之间保持30℃/ cm以下的温度梯度同时升华碳化硅原料3，在主面2a上生长碳化硅单晶1。主面2a 晶种2为{0001}面或离{0001}面为10°的平面，主面2a上的螺旋位错密度为20 / cm以上。

47. 发明专利

JP2014159347A Manufacturing apparatus and method of silicon carbide single crystal substrate 审中-公开
标题翻译：碳化硅单晶基板的制造装置及方法
公开(公告)号：JP2014159347A
公开(公告)日：2014-09-04
申请号：JP2013030782
申请日：2013-02-20
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： OI NAOKI , KAWASE TOMOHIRO , FUJIWARA SHINSUKE , SASAKI MAKOTO , NISHIGUCHI TARO , HORI TSUTOMU , UEDA SHUNSAKU
IPC分类号： C30B29/36 , C30B23/06
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and method of a silicon carbide single crystal substrate that can reduce a variation of crystal quality in the surface of a silicon carbide single crystal substrate and reduce a stress generated in a silicon carbide single crystal during growth of the silicon carbide single crystal.SOLUTION: A manufacturing apparatus 11 of a silicon carbide single crystal substrate 100a includes a raw material housing part 8 and a seed substrate holding part 1. The seed substrate holding part 1 is disposed at a position opposed to the raw material housing part 8. The seed substrate holding part 1 comprises a plate part 2 having a first principal surface 2a and a second principal surface 2b which are opposed to each other, a body part 4 in contact with the first principal surface 2a of the plate part 2, and a connection part 3 for fixing the plate part 2 to the body part 4. The thickness T1 of the plate part 2 is less than the thickness T2 of the body part 4.
摘要翻译：要解决的问题：提供一种碳化硅单晶基板的制造装置和方法，其可以减少碳化硅单晶基板的表面的晶体质量的变化，并减少生长期间在碳化硅单晶中产生的应力的碳化硅单晶。解决方案：碳化硅单晶基板100a的制造装置11包括原料收容部8和种子基板保持部1.种子基板保持部1配置在与种子基板保持部分1包括具有彼此相对的第一主表面2a和第二主表面2b的板部分2，与第一主表面2a接触的主体部分4 板部2，以及用于将板部2固定在主体部4上的连接部3.板部2的厚度T1小于第 e身体部分4。

48. 发明专利

JP2013087005A Silicon carbide substrate, silicon carbide ingot and method for producing those 审中-公开
标题翻译：硅碳化硅基体，碳化硅烧结体及其制造方法
公开(公告)号：JP2013087005A
公开(公告)日：2013-05-13
申请号：JP2011227771
申请日：2011-10-17
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SASAKI MAKOTO , NISHIGUCHI TARO
IPC分类号： C30B29/36
CPC分类号： C30B29/36 , C30B23/025 , C30B23/06 , C30B23/063 , Y10T428/24273 , Y10T428/24488
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide substrate excellent in uniformity of characteristics, a silicon carbide ingot and a method for producing those.SOLUTION: The method for producing the silicon carbide ingot comprises a step of preparing a base substrate 1 having ≤10° off angle to the (0001) plane and comprising single crystal silicon carbide, and a step of growing a silicon carbide layer on the surface of the base substrate 1. In the step for growing the silicon carbide layer, the temperature gradient is brought to be ≥20°C/cm in the width direction viewed from the side of the growth direction of the silicon carbide layer. By doing so, in the obtained silicon carbide ingot, almost the whole surface including the central part of the growing outermost surface 9 has become a facet plane 5; therefore, the silicon carbide ingot whose whole surface is brought to be the facet plane 5 can be obtained by solely grinding outer peripheral end portions.
摘要翻译：要解决的问题：为了提供特性均匀性优异的碳化硅衬底，碳化硅锭及其制造方法。＆lt; P＆gt;解决方案：制造碳化硅锭的方法包括制备与（0001）面成10°偏角并包含单晶碳化硅的基底基板1的步骤，以及生长碳化硅层在基底基板1的表面上。在用于生长碳化硅层的步骤中，从碳化硅层的生长方向侧观察的宽度方向的温度梯度为≥20℃/ cm 2。通过这样做，在获得的碳化硅锭中，几乎包括生长的最外表面9的中心部分的整个表面已经成为小平面5; 因此，可以通过仅研磨外周端部来获得整个表面成为小平面5的碳化硅锭。版权所有（C）2013，JPO＆INPIT

49. 发明专利

JP2012250897A Single crystal silicon carbide substrate, and method for manufacturing the same 审中-公开
标题翻译：单晶碳化硅基体及其制造方法
公开(公告)号：JP2012250897A
公开(公告)日：2012-12-20
申请号：JP2011126831
申请日：2011-06-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HORI TSUTOMU , SASAKI MAKOTO , NISHIGUCHI TARO , FUJIWARA SHINSUKE
IPC分类号： C30B29/36
CPC分类号： C30B23/00 , C30B29/36 , C30B33/00
摘要： PROBLEM TO BE SOLVED: To provide a single crystal silicon carbide substrate capable of suppressing dispersion of the nitrogen atom concentration in the single crystal silicon carbide substrate, and to provide a method for manufacturing the same.SOLUTION: This single crystal silicon carbide substrate 50 has a crystal structure of a polytype of 4H, has nitrogen atoms added thereto as a conductive type impurity at the atomic density exceeding 1×10/cm, and has a main surface involving a circle having a diameter of 5 cm. The single crystal silicon carbide substrate 50 includes only either of a facet region and a non-facet region.

50. 发明专利

JP2012250864A Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for producing the silicon carbide crystal ingot 有权
标题翻译：硅碳化硅晶体，碳化硅晶体晶片及其生产碳化硅晶体晶体的方法
公开(公告)号：JP2012250864A
公开(公告)日：2012-12-20
申请号：JP2011123040
申请日：2011-06-01
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HORI TSUTOMU , SASAKI MAKOTO , NISHIGUCHI TARO , FUJIWARA SHINSUKE
IPC分类号： C30B29/36
CPC分类号： C30B23/00 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide crystal ingot capable of mitigating an internal strain, and suppressing warpage generated in a large-diameter silicon carbide crystal wafer, and to provide a silicon carbide crystal wafer, and a method for producing the silicon carbide crystal ingot.SOLUTION: This invention relates: to a silicon carbide crystal ingot having a surface whose diameter is ≥4 inches, wherein the concentrations of n-type dopants is ≥1×10/cmand ≤1×10/cm, the concentration of metal atoms is ≥1×10/cmand ≤1×10/cm, which is less than the concentrations of n-type dopants, and the concentration gradient of metal atoms is ≤1×10/(cm.mm); and to a silicon carbide crystal wafer produced by using the silicon carbide crystal ingot. The silicon carbide crystal ingot is fabricated by performing acid cleaning of raw material powder containing metal atoms each having a larger atomic radius than silicon in the crystal of silicon carbide powder as at least either of interstitial atoms and substituent atoms, and then by allowing the silicon carbide crystal ingot 5 to vapor-phase grow by using the raw material powder 6.
摘要翻译：要解决的问题：提供一种能够减轻内部应变的碳化硅晶体锭，并且抑制大直径碳化硅晶片中产生的翘曲并提供碳化硅晶片，以及制造方法碳化硅晶锭。解决方案：本发明涉及具有直径≥4英寸的表面的碳化硅晶体锭，其中n型掺杂剂的浓度为≥1×10 15 / cm 3 和≤1×10 20 / cm 3 金属原子的浓度为≥1×10 14 / cm 3 和≤1×10 18 / cm 3 ，小于n型掺杂剂的浓度，金属原子的浓度梯度为≤1×10 17 /（cm 3 .mm）; 以及通过使用碳化硅晶体锭制造的碳化硅晶片。碳化硅晶体锭是通过对作为至少间隙原子和取代基原子的碳化硅粉末的晶体中含有比硅原子半径大的金属原子的原料粉末进行酸洗，然后通过使硅碳化物晶锭5通过使用原料粉末6进行气相生长。版权所有（C）2013，JPO＆INPIT

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