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31. 发明专利

JP2008035004A Method of driving solid-state image sensing device 审中-公开
标题翻译：驱动固态图像感测装置的方法
公开(公告)号：JP2008035004A
公开(公告)日：2008-02-14
申请号：JP2006204102
申请日：2006-07-27
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： IZAWA SHINICHIRO
IPC分类号： H01L27/148 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372
CPC分类号： H04N5/3592 , H01L27/14831 , H01L27/14887
摘要： PROBLEM TO BE SOLVED: To solve the problem that when AGP driving is applied to a CCD solid-state image sensing device having a lateral overflow drain structure, electric charges leak from an overflow drain region to a region where information charges are accumulated and then noise is superposed on information charges.
SOLUTION: In the method of driving the solid-state image sensing device, which has a plurality of first channel regions to which information charges are transferred, an overflow drain region which absorbs information charges in the first channel region, a drain electrode connected to the overflow drain region, and a plurality of first transfer electrodes provided crossing the plurality of first channel regions, a plurality of potential wells where information charges are accumulated are formed in the first channel regions, information charges are transferred along the first channel regions, a first potential is applied to the drain electrode during accumulation driving wherein information charges are accumulated in the potential wells, and a second potential different from the first potential is applied to the drain electrode during transfer driving wherein information charges are transferred.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了解决当将AGP驱动应用于具有横向溢出漏极结构的CCD固体摄像装置的问题时，电荷从溢出漏极区泄漏到信息电荷积累的区域然后噪声叠加在信息费用上。解决方案：在驱动固体摄像装置的方法中，其具有多个第一沟道区域，信息电荷被转移到该第一沟道区域，吸收第一沟道区域中的信息电荷的溢出漏极区域，漏极电极连接到溢出漏极区域，并且多个第一传输电极设置成与多个第一沟道区域交叉，在第一沟道区域中形成有多个潜在的信息电荷积累的势阱，信息电荷沿着第一沟道区域在积累驱动期间将第一电位施加到漏电极，其中信息电荷积聚在势阱中，并且在转移驱动期间将不同于第一电位的第二电位施加到漏极，其中信息电荷被传送。版权所有（C）2008，JPO＆INPIT

32. 发明专利

JP2006197383A Solid-state imaging device, control method thereof, and camera 有权
标题翻译：固态成像装置，其控制方法及相机
公开(公告)号：JP2006197383A
公开(公告)日：2006-07-27
申请号：JP2005008124
申请日：2005-01-14
申请人： Canon Inc , キヤノン株式会社
发明人： KOIZUMI TORU , OKITA AKIRA , SAKURAI KATSUTO , UENO TOSHITAKE
IPC分类号： H04N5/335 , H04N5/355 , H04N5/369 , H04N5/374
CPC分类号： H04N5/369 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： PROBLEM TO BE SOLVED: To not only extend a dynamic range but also improve an image quality by causing a part of an electric charge overflowing from a photoelectric conversion part to flow into an electric charge holding part.
SOLUTION: A solid-state imaging device is provided with pixels each of which includes; a photoelectric conversion part (101) for generating and storing an electric charge by photoelectric conversion; a first electric charge holding part (102) shielded from light, for storing a part of the electric charge overflowing from the photoelectric conversion part during generation and storage of the electric charge in the photoelectric conversion part; an amplification part (SF-MOS) for amplifying the electric charge; a first transfer part (Tx-MOS) for transferring the electric charge stored in the photoelectric conversion part to the amplification part; and a second transfer part (Ty-MOS) for transferring the electric charge stored in the first electric charge holding part to the amplification part.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：不仅通过使从光电转换部溢出的电荷的一部分流入电荷保持部来扩大动态范围而且提高图像质量。解决方案：固态成像装置设置有各自包括的像素; 用于通过光电转换产生和存储电荷的光电转换部分（101）; 屏蔽光的第一电荷保持部分（102），用于在光电转换部分中的电荷的产生和存储期间存储从光电转换部分溢出的电荷的一部分; 用于放大电荷的放大部分（SF-MOS）; 用于将存储在光电转换部分中的电荷传送到放大部分的第一传送部分（Tx-MOS）; 以及用于将存储在第一电荷保持部中的电荷转移到放大部的第二转印部（Ty-MOS）。版权所有（C）2006，JPO＆NCIPI

33. 发明专利

JP2006093517A Solid state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：JP2006093517A
公开(公告)日：2006-04-06
申请号：JP2004278986
申请日：2004-09-27
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： KUWAZAWA KAZUNOBU
IPC分类号： H01L27/146 , H04N5/335 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14603 , H01L27/14656 , H04N5/3592
摘要： PROBLEM TO BE SOLVED: To improve the flexibility of a design by making a surplus charge discharging and reducing an occupied area for discharging the surplus charge. SOLUTION: A solid state imaging device includes a substrate, a photoelectric conversion element PD provided in the substrate to generate optical generation charge according to a light which is incident, a floating diffusion 8 for holding the optical generation charge from the photoelectric conversion element, a transfer/holding means TT which is arranged between the photoelectric conversion device and the floating diffusion to control the transfer of the optical generation charge and which can hold the optical generation charge from the photoelectric conversion element, a resetting means 9 which initializes the potential of the floating diffusion, an amplifying transistor TA for generating an output based on the potential of the floating diffusion, a selecting transistor TS which selectively outputs the output of the amplifying transistor, and a surplus charge discharging means OFD for discharging the surplus charge generated from the photoelectric conversion element. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过产生剩余电荷放电并减少用于排出剩余电荷的占用面积来提高设计的灵活性。解决方案：固态成像装置包括基板，设置在基板中的光电转换元件PD，以根据入射的光产生光生成电荷;浮动扩散部8，用于保持来自光电转换的光生成电荷元件，设置在光电转换装置和浮动扩散之间的转移/保持装置TT，以控制光生成电荷的转移并且可以保持来自光电转换元件的光生成电荷;复位装置9，浮动扩散的电位，用于根据浮动扩散电位产生输出的放大晶体管TA，选择性地输出放大晶体管的输出的选择晶体管TS以及用于放电产生的剩余电荷的剩余电荷放电装置OFD 从光电转换元件。版权所有（C）2006，JPO＆NCIPI

34. 发明专利

JP2005277398A Ccd linear sensor 审中-公开
标题翻译： CCD线性传感器
公开(公告)号：JP2005277398A
公开(公告)日：2005-10-06
申请号：JP2005045710
申请日：2005-02-22
申请人： Sony Corp , ソニー株式会社
发明人： OBA MEGUMI
IPC分类号： H01L27/148 , H04N1/028 , H04N5/335 , H04N5/372
CPC分类号： H04N5/353 , H04N5/3592 , H04N5/3692
摘要： PROBLEM TO BE SOLVED: To provide a CCD linear sensor, capable of making the amount of saturated stored charges at each sensor constant, even when the variations in manufacture are caused on an electronic shutter gate, and of preventing the occurrence of variations in the output.
SOLUTION: The electronic shutter gate is formed on the side of each sensor in the CCD linear sensor with a plurality of sensors formed on a substrate in rows. At the lower part of the sensor, an overflow barrier having the potential deeper than that of the electronic shutter gate is formed. Moreover, the overflow barrier is formed to change the potential by changing voltage applied on the substrate.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种CCD线性传感器，其能够使每个传感器处的饱和存储电荷的量恒定，即使在电子快门闸门上引起制造变化，并且防止变化的发生在输出。解决方案：电子闸门形成在CCD线性传感器中的每个传感器的侧面，其中多个传感器以行形式在基板上形成。在传感器的下部形成具有比电子闸门门更深的电位的溢流挡板。此外，通过改变施加在基板上的电压来形成溢出屏障以改变电位。版权所有（C）2006，JPO＆NCIPI

35. 发明专利

JP2005167598A Solid-state imaging device, driver for driving the same, driving method and solid-state imaging system 审中-公开
标题翻译：固态成像装置，用于驱动它们的驱动器，驱动方法和固态成像系统
公开(公告)号：JP2005167598A
公开(公告)日：2005-06-23
申请号：JP2003403484
申请日：2003-12-02
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TSUKAMOTO AKIRA
IPC分类号： H01L27/148 , H01L27/14 , H01L31/10 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374 , H04N101/00
CPC分类号： H04N5/3597 , H04N5/3575 , H04N5/3592 , H04N5/372
摘要： PROBLEM TO BE SOLVED: To provide a solid state imaging system which allows the voltage to be lower at reading, without producing image defects, such as residual images.
SOLUTION: The imaging system comprises a gate voltage controller 31 for applying a read-out voltage to a gate electrode 17 in a read-out interval; and a substrate voltage controller 32 which continues applying a steady-state reverse bias voltage to a semiconductor substrate 11 for forming a state of leaking charges, excessively accumulated on a photoelectric converter 14 to the substrate 11 but not leaking out to a charge accumulator 13 in an accumulation interval, and applies a steady-state reverse bias voltage for raising the potential barrier between the semiconductor substrate 11 and a well 12 more than that when the steady state reverser bias voltage is applied in a part or whole of the read-out interval.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种固态成像系统，其允许在读取时电压较低，而不产生诸如残留图像的图像缺陷。解决方案：成像系统包括用于在读出间隔中将栅极电极17施加读出电压的栅极电压控制器31; 以及基板电压控制器32，其向半导体基板11继续施加稳态反向偏置电压，以形成泄漏电荷的状态，过多地累积在光电转换器14上而不泄漏到电荷累积器13 累积间隔，并且施加用于提高半导体衬底11和阱12之间的势垒的稳态反向偏置电压，超过在读出间隔的一部分或全部施加稳态反向偏置电压时。版权所有（C）2005，JPO＆NCIPI

36. 发明专利

JPS6115475A Image pickup element and image pickup device 失效
标题翻译：图像拾取元件和图像拾取器件
公开(公告)号：JPS6115475A
公开(公告)日：1986-01-23
申请号：JP13602784
申请日：1984-07-01
申请人： Canon Inc
发明人： KINOSHITA TAKAO , SAKAI SHINJI
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/378 , H04N9/04
CPC分类号： H04N9/045 , H04N5/347 , H04N5/3592 , H04N5/37213 , H04N5/3725
摘要： PURPOSE: To read two-line information through addition or to read it every other line by providing plural line sensors and shifting the picture element of each line sensor by a half picture element's share at two lines each.
CONSTITUTION: The image pickup section 1 consists of plural line sensors arranged horizontally and having transfer function and a charge in each line sensor is transferred to the left at the same time by the transfer electrode. Further, each line sensor is separated by a channel stop CS. A buffer section 2 consists of plural horizontal line CCDs for time axis conversion and an odd number line and an even number line of a pair of the image pickup section 1 are transferred through a common line. Thus, it is possible to transfer selectively one of the odd number line or the even number line and both the lines are transferred through addition. After the charge transferred from the buffer section 2 is stored in the storage section 3, the charge is transferred at each line and read to the horizontal register.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过添加阅读两行信息或通过提供多行线传感器并将每个线传感器的图像元素以每个两行的半像素份数移动来读取其它每行。构成：图像拾取部分1由水平布置并具有传递函数的多个线传感器组成，并且每个线传感器中的电荷被转印电极同时转移到左边。此外，每个线传感器被通道停止CS分开。缓冲部分2由用于时间轴转换的多个水平线CCD和一对图像拾取部分1的奇数行和偶数行通过公共线传送。因此，可以选择性地传输奇数行或偶数行中的一个，并且通过添加传送两行。在从缓冲器部分2传送的电荷被存储在存储部分3中之后，每一行传送电荷并读取到水平寄存器。

37. 发明专利

JP6246144B2 固体撮像装置有权
公开(公告)号：JP6246144B2
公开(公告)日：2017-12-13
申请号：JP2015027924
申请日：2015-02-16
申请人：キヤノン株式会社
发明人：小林昌弘 , 大貫裕介 , 小泉徹
IPC分类号： H04N5/376 , H01L27/146 , H04N5/374
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14656 , H04N5/3592 , H04N5/37452

38. 发明专利

JP6157630B2 CMOS能動ピクセルの構造有权
公开(公告)号：JP6157630B2
公开(公告)日：2017-07-05
申请号：JP2015538474
申请日：2013-10-25
申请人：ニューイメージングテクノロジーズ
发明人：ヤン、ニ
IPC分类号： H01L27/146 , H04N5/355 , H04N5/374
CPC分类号： H04N5/3742 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H04N5/355 , H04N5/3592 , H04N5/3594 , H04N5/3696

39. 发明专利

JPWO2015011869A1 固体撮像装置、撮像装置及びその駆動方法审中-公开
标题翻译：的固态成像器件，成像装置及它们的驱动方法
公开(公告)号：JPWO2015011869A1
公开(公告)日：2017-03-02
申请号：JP2015528122
申请日：2014-06-06
申请人：パナソニックIpマネジメント株式会社
发明人：拓也浅野 , 静鈴木
IPC分类号： H04N5/33 , G01C3/06 , G02B7/40 , G03B13/36 , H04N5/341 , H04N5/3728
CPC分类号： H04N9/045 , G01S7/4861 , G01S17/42 , G01S17/89 , G06T2200/04 , G06T2207/10024 , G06T2207/10048 , G06T2207/20182 , H01L27/14843 , H01L27/14887 , H04N5/33 , H04N5/341 , H04N5/3592 , H04N5/361 , H04N5/3728 , H04N13/0271
摘要： 1つのイメージセンサから、1フレーム走査期間内に背景光による影響を排除した距離画像を取得し、かつ、別フレームにて可視画像も取得する。撮像装置は、赤外光を照射する赤外光源と、それぞれ縦型オーバーフロードレインを有し、かつ半導体基板上に行列状に配置された、赤外光を信号電荷に変換する複数の第1画素、及び可視光を信号電荷に変換する複数の第2画素を有する固体撮像装置とを備え、固体撮像装置は、赤外光の照射期間で前記複数の第1画素から得た第1の信号と、赤外光の非照射期間で複数の第1画素から得た第2の信号とを、第1のフレーム走査期間内で出力し、複数の第1画素から得た第3の信号及び複数の第2画素から得た第4の信号を、第2のフレーム走査期間内で出力する。
摘要翻译：从一个图像传感器，它获取消除背景光的一帧扫描周期内的效果，又在一个单独的帧获得的可视图像的距离图像。成像装置中，红外光源，用于照射红外光，具有垂直溢出漏极，分别与半导体基板，多个红外光转换为信号电荷的的第一像素上排列成矩阵和具有多个第二像素用于将可见光转换为信号电荷的固体摄像装置，所述固体摄像装置包括在上述红外光的照明期间从所述多个第一像素的所获得的第一信号并且在红外光的周期从未经照射多个第一像素的获得的第二信号，并输出在第一帧扫描期间，所述第三信号和多个从多个第一像素的所获得从第二像素获得的第四信号，并输出在第二帧扫描期间。

40. 发明专利

JP5302073B2 Solid-state imaging device 有权
公开(公告)号：JP5302073B2
公开(公告)日：2013-10-02
申请号：JP2009089157
申请日：2009-04-01
申请人：浜松ホトニクス株式会社
发明人：久則鈴木 , 康人米田 , 堅太郎前田 , 雅治村松
IPC分类号： H01L27/148 , H04N5/335 , H04N5/369 , H04N5/372
CPC分类号： H04N5/37206 , H01L27/14831 , H01L27/14856 , H01L27/14887 , H01L31/113 , H04N5/3592
摘要： In a solid-state imaging device 1, an overflow gate (OFG) 5 has a predetermined electric resistance value, while voltage application units 16, to 16 5 are electrically connected to the OFG 5 at connecting parts 17 1 to 17 5 . Therefore, when voltage values V1 to V5 applied to the connecting parts 17 1 to 17 5 by the voltage application units 16 1 to 16 5 are adjusted, the OFG 5 can yield higher and lower voltage values in its earlier and later stage parts, respectively. As a result, the barrier level (potential) becomes lower and higher in the earlier and later stage parts, so that all the electric charges generated in an earlier stage side region of photoelectric conversion units 2 can be caused to flow out to an overflow drain (OFD) 4, whereby only the electric charges generated in a later stage side region of the photoelectric conversion units 2 can be TDI-transferred.

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