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31. 发明专利

JP2012164981A Laser package with plural emitters constructed on substrate member 审中-公开
标题翻译：具有在基板构件上构造的多个发射体的激光包装
公开(公告)号：JP2012164981A
公开(公告)日：2012-08-30
申请号：JP2012011589
申请日：2012-01-24
申请人： Soraa Inc , ソラアインコーポレーテッドSoraa Inc.
发明人： JAMES W RARING , PAUL RUDY , CHENGDONG BAI
IPC分类号： H01S5/22 , H01S5/022 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L24/45 , H01L2224/45124 , H01L2224/48091 , H01L2224/49111 , H01S5/005 , H01S5/02252 , H01S5/02284 , H01S5/02292 , H01S5/02476 , H01S5/0287 , H01S5/2009 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/4012 , H01S5/4031 , H01S5/4056 , H01S2301/14 , H01S2304/04 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a method and a device to emit high-output electromagnetic radiation based on a nonpolar gallium-containing substrate or semipolar gallium-containing substrate such as GaN, AlN, InN, InGaN, A1GaN, and AlInGaN.SOLUTION: A laser device includes a plurality of laser emitters emitting green or blue laser beams. To optically combine radiation from these laser emitters, at least one optical member is placed to be integrated with a substrate.
摘要翻译：要解决的问题：提供一种基于非极性含镓衬底或半极性含镓衬底（例如GaN，AlN，InN，InGaN，AlGaN和AlInGaN）发射高输出电磁辐射的方法和装置。解决方案：激光装置包括发射绿色或蓝色激光束的多个激光发射器。为了光学地组合来自这些激光发射器的辐射，至少一个光学构件被放置成与衬底一体化。版权所有（C）2012，JPO＆INPIT

32. 发明专利

JP5004989B2 Nitride semiconductor light-emitting device and a method of manufacturing the same, as well as, semiconductor optical device 有权
公开(公告)号：JP5004989B2
公开(公告)日：2012-08-22
申请号：JP2009079943
申请日：2009-03-27
申请人：シャープ株式会社
发明人：征孝太田 , 剛神川
IPC分类号： H01S5/343 , H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/02212 , H01S5/028 , H01S5/168 , H01S5/2009 , H01S5/3202 , H01S5/4031 , H01S2304/04

33. 发明专利

JP2012094622A Semiconductor laser device assembly and semiconductor optical amplifier assembly 有权
标题翻译：半导体激光器件组件和半导体光放大器组件
公开(公告)号：JP2012094622A
公开(公告)日：2012-05-17
申请号：JP2010239457
申请日：2010-10-26
申请人： Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
发明人： YOKOYAMA HIROYUKI , KONO SHUNSUKE , KURAMOTO MASARU
IPC分类号： H01S5/065 , H01S5/50
CPC分类号： H01S5/0657 , B82Y20/00 , H01S5/0064 , H01S5/0071 , H01S5/0078 , H01S5/028 , H01S5/0425 , H01S5/06251 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/16 , H01S5/2009 , H01S5/22 , H01S5/3063 , H01S5/309 , H01S5/3211 , H01S5/3216 , H01S5/34333 , H01S5/50 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device assembly capable of eliminating the fluctuation of light intensity within the duration of emitted pulsed laser light in a mode synchronous semiconductor laser element in which the spectrum of light output indicates a long wave shift due to self-phase modulation.SOLUTION: The semiconductor laser device assembly includes: a mode synchronous semiconductor laser element 10 in which the spectrum of light output indicates a long wave shift due to self-phase modulation; an external resonator 80; and a wavelength selection element 82. A long wave component of the pulsed laser light emitted from mode synchronous semiconductor laser element 10 through the external resonator 80 is extracted by the wavelength selection element 82 and is output to the outside of the semiconductor laser device assembly.
摘要翻译：要解决的问题：提供一种半导体激光装置组件，其能够消除在其中光输出的光谱表示长波移位的模式同步半导体激光元件中发射的脉冲激光的持续时间内的光强度的波动由于自相位调制。解决方案：半导体激光器件组件包括：模式同步半导体激光元件10，其中光输出的光谱表示由于自相位调制而产生的长波移; 外部谐振器80; 和波长选择元件82.由模式同步半导体激光元件10通过外部谐振器80发射的脉冲激光的长波分量由波长选择元件82提取出来，并被输出到半导体激光器装置组件的外部。版权所有（C）2012，JPO＆INPIT

34. 发明专利

JP4917157B2 Method of manufacturing a ridge-type semiconductor laser and ridge-type semiconductor laser 有权
公开(公告)号：JP4917157B2
公开(公告)日：2012-04-18
申请号：JP2010041889
申请日：2010-02-26
申请人： Nttエレクトロニクス株式会社
发明人：康義大手 , 謙司平位 , 篤郎幸前 , 弘横山 , 淳一浅岡
IPC分类号： H01S5/12 , H01S5/22 , H01S5/323
CPC分类号： H01S5/1231 , H01S5/2004 , H01S5/2009 , H01S5/2086 , H01S5/209 , H01S5/22 , H01S5/3235 , H01S2304/04

35. 发明专利

JP2012064920A Recording apparatus and optical oscillation device 审中-公开
标题翻译：记录装置和光学振荡装置
公开(公告)号：JP2012064920A
公开(公告)日：2012-03-29
申请号：JP2011111866
申请日：2011-05-18
申请人： Sony Corp , ソニー株式会社
发明人： FUJITA GORO , KURAMOTO MASARU , WATANABE HIDEKI , MIYAJIMA TAKAO
IPC分类号： H01S5/065 , H01S5/026
CPC分类号： H01S5/0265 , B82Y20/00 , G11B7/0045 , G11B7/126 , G11B7/127 , G11B2007/00457 , H01S5/0202 , H01S5/028 , H01S5/0614 , H01S5/0658 , H01S5/06821 , H01S5/2009 , H01S5/22 , H01S5/3216 , H01S5/34306
摘要： PROBLEM TO BE SOLVED: To provide a recording apparatus which can obtain a desired pulse light frequency easily using a single element based simple structure.SOLUTION: A recording apparatus 200, designed to record information on an optical recording medium 21, comprises a self-oscillating semiconductor laser 1, containing therein a supersaturated absorber unit for applying a bias voltage Vsa and a gain unit for injecting gain current, which emits laser light used for recording information to an optical recording medium 21; a reference signal generation unit 14 which, in addition to generating a master clock signal, supplies an injection signal synchronized with the master clock signal to the gain unit of the self-oscillating semiconductor laser 1; and a recording signal generation unit 13 which, while generating a recording signal based on the master clock signal, applies the recording signal as a bias voltage Vsa to the supersaturated absorber unit of the self-oscillating semiconductor laser 1.
摘要翻译：要解决的问题：提供一种能够使用单个元件的简单结构容易地获得期望的脉冲光频率的记录装置。解决方案：设计用于在光学记录介质21上记录信息的记录装置200包括自振荡半导体激光器1，其中包含用于施加偏置电压Vsa的过饱和吸收器单元和用于注入增益电流的增益单元，其将用于记录信息的激光发射到光学记录介质21; 参考信号生成单元14除了产生主时钟信号之外，还将与主时钟信号同步的注入信号提供给自激半导体激光器1的增益单元; 以及记录信号生成单元13，其在基于主时钟信号生成记录信号的同时，将记录信号作为偏置电压Vsa施加到自激振荡半导体激光器1的过饱和吸收体单元。（COPYRIGHT：（ C）2012，JPO＆INPIT

36. 发明专利

JP4845790B2 Semiconductor laser device and a method of manufacturing the same 有权
公开(公告)号：JP4845790B2
公开(公告)日：2011-12-28
申请号：JP2007094738
申请日：2007-03-30
申请人：三洋電機株式会社
发明人：誠一徳永 , 雅幸畑 , 邦生竹内
IPC分类号： H01S5/02 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/0216 , H01S5/0217 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2216 , H01S5/305 , H01S5/3054 , H01S5/3063 , H01S2304/04 , H01S2304/12

37. 发明专利

JP4830315B2 Semiconductor laser element 有权
公开(公告)号：JP4830315B2
公开(公告)日：2011-12-07
申请号：JP2005056085
申请日：2005-03-01
申请人：日亜化学工業株式会社
发明人：靖長小谷 , 拓明松村
IPC分类号： H01S5/22 , H01S5/02 , H01S5/024 , H01S5/16 , H01S5/20 , H01S5/32 , H01S5/343
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/024 , H01S5/1017 , H01S5/2009 , H01S5/22 , H01S5/3216 , H01S5/34333 , H01S2301/18 , H01S2304/12

38. 发明专利

JP4775455B2 Iii-nitride semiconductor laser, and a method of making a iii nitride semiconductor laser 有权
公开(公告)号：JP4775455B2
公开(公告)日：2011-09-21
申请号：JP2009034004
申请日：2009-02-17
申请人：住友電気工業株式会社
发明人：昌紀上野 , 孝史京野 , 隆道住友 , 祐介善積 , 陽平塩谷 , 勝史秋田 , 慧藤井
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211 , H01S5/3404 , H01S2304/04

40. 发明专利

JP2011061033A Group-iii nitride semiconductor laser element, and method of manufacturing group-iii nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光元件及其制造III族氮化物半导体激光器件的方法
公开(公告)号：JP2011061033A
公开(公告)日：2011-03-24
申请号：JP2009209619
申请日：2009-09-10
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： YOSHIZUMI YUSUKE , SHIOYA YOHEI , KYONO TAKASHI , ADACHI MASAHIRO , AKITA KATSUSHI , UENO MASANORI , SUMITOMO TAKAMICHI , TOKUYAMA SHINJI , KATAYAMA KOJI , NAKAMURA TAKAO , IKEGAMI TAKATOSHI
IPC分类号： H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor laser element with a laser resonator, allowing a low-threshold current on a semipolar surface of a supporting base wherein the c-axis of a hexagonal group-III nitride is tilted toward the a-axis.
SOLUTION: A first cut surface 27 and a second cut surface 29, which form a laser resonator, intersect with an a-n plane. The group-III nitride semiconductor laser element 11 has a laser waveguide, extending in a direction of a cross line between the a-n plane and the semipolar surface 17a. Therefore, band-to-band transition light emission allowing a low-threshold current can be used. In a laser structural body 13, a first surface 13a is located on the opposite side to a second surface 13b. The first cut surface 27 and the second cut surface 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The cut surfaces 27 and 29 are not formed by dry etching, but are made to differ from conventional cleaved surfaces, such as c-planes, m-planes or a-planes.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有激光谐振器的III族氮化物半导体激光元件，允许在支撑基底的半极性表面上的低阈值电流，其中六方晶III族氮化物的c轴为朝向a轴倾斜。解决方案：形成激光谐振器的第一切割表面27和第二切割表面29与a-n平面相交。 III族氮化物半导体激光元件11具有在a-n平面和半极性表面17a之间的交叉线的方向上延伸的激光波导。因此，可以使用允许低阈值电流的带 - 带转换发光。在激光结构体13中，第一表面13a位于与第二表面13b相反的一侧。第一切割表面27和第二切割表面29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。切割表面27和29不是通过干蚀刻形成，而是与常规的切割表面不同，例如c平面，m平面或a平面。版权所有（C）2011，JPO＆INPIT

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