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    • 34. 发明专利
    • Semiconductor ring laser apparatus
    • 半导体激光器装置
    • JP2014059170A
    • 2014-04-03
    • JP2012203152
    • 2012-09-14
    • V Technology Co Ltd株式会社ブイ・テクノロジー
    • KAJIYAMA KOICHINASUKAWA TOSHIMICHIISHIKAWA SUSUMUKANAO MASAYASU
    • G01C19/66H01S5/14
    • H01S5/1071G01C19/661H01S3/07H01S3/083H01S5/021H01S5/0261H01S5/0425H01S5/0683H01S5/14H01S5/2031H01S5/305H01S5/3054H01S5/4006
    • PROBLEM TO BE SOLVED: To provide a semiconductor ring laser apparatus capable of obtaining stable oscillation of ring laser, highly accurately detecting angular velocity and having extremely small size and extremely light weight.SOLUTION: The semiconductor ring laser apparatus comprises: one Si semiconductor substrate 10; a ring resonator 20 including an optical waveguide 21 formed on the Si semiconductor substrate 10; a semiconductor laser part 2 having a light-emitting amplification part 2A on at least a part of the optical waveguide 21 and generating two laser beams L1, L2 circulating around the ring resonator 20 in a direction opposite to each other; and a light detection part 4 formed on the Si semiconductor substrate 10, extracting the two laser beams L1, L2 from the ring resonator 20 and detecting a frequency difference between the two laser beams L1, L2. The light-emitting amplification part 2A has a pn junction part 13a that is obtained by annealing and simultaneously irradiating with light a second semiconductor layer 13 obtained by performing high concentration doping of B (boron) to a first semiconductor layer 10n on the Si semiconductor substrate 10.
    • 要解决的问题:提供一种能够获得环形激光器的稳定振荡,高精度地检测角速度并且具有极小尺寸和极小重量的半导体环形激光装置。解决方案:半导体环形激光装置包括:一个Si半导体衬底10 ; 包括形成在Si半导体衬底10上的光波导21的环形谐振器20; 半导体激光器部分2,其在至少一部分光波导21上具有发光放大部分2A,并产生沿环形谐振器20沿相反方向循环的两束激光束L1,L2; 以及形成在Si半导体衬底10上的光检测部分4,从环形谐振器20提取两个激光束L1,L2并检测两个激光束L1,L2之间的频率差。 发光放大部2A具有pn结部13a,其通过对Si(半导体)衬底上的第一半导体层10n进行高浓度掺杂B(硼)而获得的第二半导体层13退火并同时照射光而获得 10。