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    • 36. 发明专利
    • Light-transmitting heat-insulating material
    • 发光绝热材料
    • JPS5755966A
    • 1982-04-03
    • JP13189780
    • 1980-09-22
    • Sekisui Chem Co Ltd
    • SUMIYA TETSUO
    • B32B17/00C08K3/00C08K9/02C08L101/00F16L59/02
    • F16L59/02
    • PURPOSE: A cheap light-transmitting heat-insulating material with excellent heat insulating property and selective transmittance, obtd. by incorporating a light-transmitting inorg. powder having a selectively transmitting semiconductor film on its surface in a synthetic resin.
      CONSTITUTION: A synthetic resin is compounded with pref. 0.05W20wt% light- transmitting inorganic powder having a selectively transmitting semiconductor film on its surface. Said inorganic powder is pref. one excellent in heat resistance because of possibility of chemical treatment in the formation of the semiconductor film, and lamellar on of high aspect ratio such as powdered silica, mica or galss flake is pref. because of increased effect of selective transmittance when flatly arranged. A semiconductor doped with an oxide such as indium oxide or titanium oxide, a halide such as copper iodide, etc. is used as said selectively transmitting semiconductor.
      COPYRIGHT: (C)1982,JPO&Japio
    • 目的:一种廉价的透光隔热材料,具有优良的绝热性能和选择性的透光率。 通过并入透光的inorg。 粉末在合成树脂的表面上具有选择性地透过半导体膜。 构成:合成树脂与pref。 0.05-20重量%的透光性无机粉末,其表面上具有选择性透射半导体膜。 所述无机粉末是优选的。 由于半导体膜的形成中的化学处理的可能性,耐热性优异,并且具有高纵横比的层状,例如二氧化硅粉,云母或鳞片状薄片。 因为平面布置时增加了选择性透光效果。 使用掺杂有氧化铟或氧化钛的氧化物,卤化物如碘化铜等的半导体作为所述选择性透射半导体。